Techniques for read operations转让专利
申请号 : US16254962
文献号 : US10726917B1
文献日 : 2020-07-28
发明人 : Ferdinando Bedeschi , Riccardo Muzzetto , Umberto Di Vincenzo
申请人 : Micron Technology, Inc.
摘要 :
Methods, systems, devices, and techniques for read operations are described. In some examples, a memory device may include a first transistor (e.g., memory node transistor) configured to receive a precharge voltage at a first gate and output first voltage based on a threshold of the first transistor to a reference node via a first switch. The device may include a second transistor (e.g., a reference node transistor) configured to receive a precharge voltage and output a second voltage based on a threshold of the second transistor to a memory node via a second switch. The first voltage may be modified by a reference voltage and input to the second transistor. The second voltage may be modified by a voltage stored on a memory cell and input to the first transistor. The first and second transistor may output third and fourth voltages to be sampled to a latch.