Conductive structure with self-healing properties and method for making same转让专利
申请号 : US16294562
文献号 : US10743407B2
文献日 : 2020-08-11
发明人 : Wen-Hsin Hsiao
申请人 : Interface Technology (ChengDu) Co., Ltd. , INTERFACE OPTOELECTRONICS (SHENZHEN) CO., LTD. , GENERAL INTERFACE SOLUTION LIMITED
摘要 :
A self-healing conductive structure includes a conductive layer and a self-healing layer on at least one surface of the conductive layer. The self-healing layer includes a substrate and carbon nanotubes in the insulating matrix, the layer having low viscosity at higher temperatures. When there is a crack in the conductive layer, the self-healing layer flows into the crack, and the carbon nanotubes then in the crack are rearranged under an electric field to repair conductivity. Service life of the conductive structure is improved and signals generated by the conductive structure retain integrity. A method for making the self-healing conductive structure is also provided.