Methods of processing semiconductor devices转让专利

申请号 : US16200873

文献号 : US10825762B2

文献日 :

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发明人 : Brandon P. WirzJack E. Murray

申请人 : Micron Technology, Inc.

摘要 :

Methods of processing a semiconductor device include providing a patterned mask over a major surface of a substrate and comprising at least one opening exposing a conductive structure, and depositing particles of material by direct material deposition adjacent and in contact with an edge wall of the mask adjacent the at least one opening to form a supplemental mask over the major surface of the substrate. Other methods of processing semiconductor devices include depositing particles of material by direct material deposition adjacent a conductive structure at an intersection of the conductive structure and a surface of a substrate.