Methods of processing semiconductor devices转让专利
申请号 : US16200873
文献号 : US10825762B2
文献日 : 2020-11-03
发明人 : Brandon P. Wirz , Jack E. Murray
申请人 : Micron Technology, Inc.
摘要 :
Methods of processing a semiconductor device include providing a patterned mask over a major surface of a substrate and comprising at least one opening exposing a conductive structure, and depositing particles of material by direct material deposition adjacent and in contact with an edge wall of the mask adjacent the at least one opening to form a supplemental mask over the major surface of the substrate. Other methods of processing semiconductor devices include depositing particles of material by direct material deposition adjacent a conductive structure at an intersection of the conductive structure and a surface of a substrate.