Methods and apparatus for programming a memory cell using one or more blocking memory cells转让专利
申请号 : US12820430
文献号 : US08045386B2
文献日 : 2011-10-25
发明人 : Giovanni Santin , Michele Incarnati
摘要 :
Methods and apparatus for programming a memory cell using one or more blocking memory cells facilitate mitigation of capacitive voltage coupling. The methods include applying a program voltage to a selected memory cell of a string of memory cells, and applying a cutoff voltage to a set of one or more memory cells of the string between the selected memory cell and a select gate. The methods further include applying a pass voltage to one or more other memory cells of the string between the selected memory cell and the select gate. Other methods further include applying other pass voltages, other cutoff voltages and/or intermediate voltages to still other memory cells of the string.