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    • 69. 发明授权
    • Method of direct Coulomb explosion in laser ablation of semiconductor structures
    • 半导体结构激光烧蚀中直接库仑爆炸的方法
    • US07759607B2
    • 2010-07-20
    • US11820655
    • 2007-06-20
    • William W. Chism, II
    • William W. Chism, II
    • B23K26/00
    • B23K26/1423B23K26/03B23K26/032B23K26/0624B23K26/0665B23K26/40B23K2101/40B23K2103/50
    • A new technique and Method of Direct Coulomb Explosion in Laser Ablation of Semiconductor Structures in semiconductor materials is disclosed. The Method of Direct Coulomb Explosion in Laser Ablation of Semiconductor Structures provides activation of the “Coulomb explosion” mechanism in a manner which does not invoke or require the conventional avalanche photoionization mechanism, but rather utilizes direct interband absorption to generate the Coulomb explosion threshold charge densities. This approach minimizes the laser intensity necessary for material removal and provides optimal machining quality. The technique generally comprises use of a femtosecond pulsed laser to rapidly evacuate electrons from a near surface region of a semiconductor or dielectric structure, and wherein the wavelength of the laser beam is chosen such that interband optical absorption dominates the carrier production throughout the laser pulse. The further application of a strong electric field to the semiconductor or dielectric structure provides enhancement of the absorption coefficient through a field induced redshift of the optical absorption. The use of this electric field controlled optical absorption is available in all semiconductor materials and allows precise control of the ablation rate. When used in conjunction with nanoscale semiconductor or dielectric structures, the application of a strong electric field provides for laser ablation on sub-micron lateral scales.
    • 公开了半导体材料中半导体结构的激光烧蚀中的直接库仑爆炸的新技术和方法。 在半导体结构的激光烧蚀中的直接库仑爆炸的方法提供了“库仑爆炸”机制的激活,其方式不会引起或需要常规的雪崩光电离机理,而是利用直接的带间吸收来产生库仑爆炸阈值电荷密度 。 这种方法可最大限度地减少材料去除所需的激光强度,并提供最佳的加工质量。 该技术通常包括使用飞秒脉冲激光来从半导体或电介质结构的近表面区域快速排出电子,并且其中选择激光束的波长,使得带间光吸收主导整个激光脉冲中的载流子产生。 对半导体或电介质结构的强电场的进一步应用通过光吸收的场诱导红移提高了吸收系数。 在所有的半导体材料中都可使用这种电场控制的光吸收,并允许精确控制烧蚀速率。 当与纳米级半导体或电介质结构结合使用时,强电场的应用提供了亚微米横向尺度上的激光烧蚀。