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91. 发明申请

US20070026665A1 METHOD OF FABRICATING A DUAL DAMASCENE INTERCONNECT STRUCTURE 审中-公开
标题翻译：双重DAMASCENE互连结构的制作方法
公开(公告)号：US20070026665A1
公开(公告)日：2007-02-01
申请号：US11535935
申请日：2006-09-27
申请人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
发明人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
IPC分类号： H01L21/4763 , H01L21/461 , H01L21/302
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76808
摘要： A method of fabricating a dual damascene interconnect structure uses a very high frequency high-density plasma and selectively controlled substrate bias for in-situ etching a trench above a via hole of the interconnect structure and a barrier layer between the via hole and underlying conductive layer.
摘要翻译：制造双镶嵌互连结构的方法使用非常高频的高密度等离子体和选择性控制的衬底偏压，用于原位蚀刻互连结构的通孔上方的沟槽以及通孔和下面的导电层之间的阻挡层。

92. 发明申请

US20050059234A1 Method of fabricating a dual damascene interconnect structure 审中-公开
标题翻译：制造双镶嵌互连结构的方法
公开(公告)号：US20050059234A1
公开(公告)日：2005-03-17
申请号：US10663304
申请日：2003-09-16
申请人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
发明人： Kallol Bera , Gerardo Delgadino , Allen Zhao , Yan Ye
IPC分类号： H01L21/311 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/02063 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76808
摘要： A method of fabricating a dual damascene interconnect structure uses a very high frequency high-density plasma and selectively controlled substrate bias for in-situ etching a trench above a via hole of the interconnect structure and a barrier layer between the via hole and underlying conductive layer.
摘要翻译：制造双镶嵌互连结构的方法使用非常高频的高密度等离子体和选择性控制的衬底偏压，用于原位蚀刻互连结构的通孔上方的沟槽，以及通孔和下面的导电层之间的阻挡层。

93. 发明授权

US09653267B2 Temperature controlled chamber liner 有权
公开(公告)号：US09653267B2
公开(公告)日：2017-05-16
申请号：US13632585
申请日：2012-10-01
申请人： James D. Carducci , Kallol Bera , Nipun Misra , Larry D. Elizaga
发明人： James D. Carducci , Kallol Bera , Nipun Misra , Larry D. Elizaga
IPC分类号： C23C16/00 , H01J37/32
CPC分类号： H01J37/32495 , H01J37/32522 , Y10T428/13 , Y10T428/21 , Y10T428/24273 , Y10T428/24479
摘要： A liner for a semiconductor processing chamber and a semiconductor processing chamber are provided. In one embodiment, a liner for a semiconductor processing chamber includes a body having an outwardly extending flange. A plurality of protrusions extend from a bottom surface of the flange. The protrusions have a bottom surface defining a contact area that is asymmetrically distributed around the bottom surface of the flange.

94. 发明申请

US20070254483A1 Plasma etch process using polymerizing etch gases and an inert diluent gas in independent gas injection zones to improve etch profile or etch rate uniformity 审中-公开
标题翻译：在独立气体注入区域中使用聚合蚀刻气体和惰性稀释气体的等离子体蚀刻工艺，以改善蚀刻轮廓或蚀刻速率均匀性
公开(公告)号：US20070254483A1
公开(公告)日：2007-11-01
申请号：US11413900
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
IPC分类号： C23F1/00 , H01L21/302
CPC分类号： H01L21/31116 , H01J37/3244 , H01J37/32449 , H01J2237/334 , H01L21/67069
摘要： A plasma etch process for etching high aspect ratio openings in a dielectric film on a workpiece is carried out in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through at least one of plural concentric gas injection zones of the ceiling electrode and injecting an inert diluent gas through at least a selected one of the plural gas injection zones of the ceiling electrode and apportioning respective flow rates of the diluent gas through respective ones of the gas injection zones in accordance with the distribution among corresponding concentric zones of the workpiece of etch profile tapering. The process further includes evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece, and etching the high aspect ratio openings in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor.
摘要翻译：用于蚀刻工件上的电介质膜中的高纵横比开口的等离子体蚀刻工艺在具有覆盖工件的顶部电极的反应器和支撑工件的静电卡盘上进行。该方法包括将聚合蚀刻工艺气体注入到天花板电极的多个同心气体注入区域中的至少一个中，并且通过天花板电极的多个气体注入区域中的至少一个选择惰性稀释气体并分配各自的流量根据蚀刻轮廓渐缩的工件的相应同心区域之间的分布，通过相应的气体注入区域的稀释气体。该方法还包括通过围绕工件边缘的泵送环空将气体从反应器排出，以及用蚀刻工艺气体衍生的蚀刻物质蚀刻电介质膜中的高纵横比开口，同时沉积衍生自蚀刻工艺气体的聚合物通过在反应器中产生等离子体而在工件上。

95. 发明申请

US20070251918A1 Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation 有权
标题翻译：在具有时间调制的不同径向气体注入区域中使用不同蚀刻和聚合物沉积速率的聚合蚀刻气体的等离子体蚀刻工艺
公开(公告)号：US20070251918A1
公开(公告)日：2007-11-01
申请号：US11414017
申请日：2006-04-28
申请人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
发明人： Kallol Bera , Xiaoye Zhao , Kenny Doan , Ezra Gold , Paul Brillhart , Bruno Geoffrion , Bryan Pu , Daniel Hoffman
IPC分类号： C03C25/68 , C23F1/00
CPC分类号： H01L21/31116 , H01J37/321 , H01J37/32449
摘要： A plasma etch process for etching a workpiece is carried out in a plasma reactor having a ceiling electrode overlying the process region with plural concentric gas injection zones. The process includes injecting process gases with different compositions of chemical species through different ones of the gas injection zones to establish a distribution of chemical species among the plural gas injection zones. The process gases include fluorine-rich polymerizing etch gases that promote a high etch rate, carbon-rich polymerizing etch gases that promote a high polymer deposition rate, polymer management gases (e.g., oxygen or nitrogen) that retard polymer deposition rate and an inert diluent gas that reduces etch profile tapering. The method further includes distributing the processes gases among the plural gas injection zone so that (a) the fluorine-rich etch process gases have the highest flow rate over zones of the workpiece tending to have the lowest etch rate, (b) the carbon-rich etch process gases have the highest flow rate over zones of the workpiece tending to have the highest etch rate, (c) the polymer management gases have the highest flow rate over zones of the workpiece tending to have the highest tendency for etch stop, (d) the inert diluent gas has the highest flow rate over zones of the workpiece tending to have the greatest etch profile tapering.
摘要翻译：用于蚀刻工件的等离子体蚀刻工艺在具有覆盖具有多个同心气体注入区的工艺区域的顶板电极的等离子体反应器中进行。该方法包括通过不同的气体注入区注入具有不同组成的化学物质的工艺气体，以建立多个气体注入区域之间的化学物质分布。工艺气体包括富含氟的聚合蚀刻气体，其促进高蚀刻速率，促进高聚合物沉积速率的富碳聚合蚀刻气体，阻止聚合物沉积速率的聚合物管理气体（例如氧气或氮气）和惰性稀释剂减少蚀刻轮廓渐缩的气体。该方法还包括在多个气体注入区域之间分配工艺气体，使得（a）富氟蚀刻工艺气体在工件区域上具有最高的流速，倾向于具有最低的蚀刻速率，（b）碳 - 丰富的蚀刻工艺气体在工件区域上具有最高的流速，倾向于具有最高的蚀刻速率，（c）聚合物管理气体在工件区域上具有最高的流速，倾向于具有蚀刻停止的最高趋势（ d）惰性稀释气体在工件区域上具有最高的流速，倾向于具有最大的蚀刻轮廓渐缩。

96. 发明申请

US20070091540A1 Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control 审中-公开
标题翻译：使用多区域前馈热控制在等离子体反应器中处理工件的方法
公开(公告)号：US20070091540A1
公开(公告)日：2007-04-26
申请号：US11409184
申请日：2006-04-21
申请人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Paul Brillhart , Richard Fovell , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for supporting the workpiece within a reactor chamber, the method including circulating a coolant through a refrigeration loop that includes inner and outer zone evaporators inside respective inner and outer zones of the electrostatic chuck, while pressurizing inner and outer zones of a workpiece-to-chuck interface with a thermally conductive gas, and sensing conditions in the chamber including inner and outer zone temperatures near the workpiece. The method further includes obtaining the next scheduled change in RF heat load on the workpiece and using thermal modeling to estimate respective changes in thermal conditions of the coolant in the inner and outer zone evaporators, respectively, that would hold temperatures measured in the inner and outer electrostatic chuck zones, respectively, nearly constant by compensating for the next scheduled change in RF heat load, and making the respective changes in thermal conditions of the coolant in inner and outer zone evaporators prior to the time of the next scheduled change by a head start related to the thermal propagation delay through the electrostatic chuck.
摘要翻译：一种在等离子体反应器中处理工件的方法，所述等离子体反应器具有用于在反应室内支撑工件的静电卡盘，所述方法包括使冷却剂循环通过制冷回路，所述制冷回路在静电吸盘的内部和外部区域内包括内部和外部区域蒸发器同时用导热气体对工件 - 卡盘界面的内部和外部区域加压，以及感测室中包括工件附近的内部和外部区域温度的条件。该方法还包括获得工件上的RF热负荷的下一个预定的改变，并且使用热模型来分别估计在内部和外部区域蒸发器中的冷却剂的热条件的各自变化，其将保持在内部和外部测量的温度通过补偿下一个预定的RF热负荷变化，分别使静电吸盘区域几乎恒定，并且在下一次预定的改变时间之前通过头部开始使得内部和外部区域蒸发器中的冷却剂的热条件的各自变化与通过静电卡盘的热传播延迟有关。

97. 发明申请

US20070091538A1 Plasma reactor with wafer backside thermal loop, two-phase internal pedestal thermal loop and a control processor governing both loops 有权
标题翻译：具有晶片背面热循环的等离子体反应器，两相内部基座热回路和控制两个回路的控制处理器
公开(公告)号：US20070091538A1
公开(公告)日：2007-04-26
申请号：US11408567
申请日：2006-04-21
申请人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor with a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes a backside gas pressure source coupled to the electrostatic chuck for applying a thermally conductive gas under a selected pressure into a workpiece-surface interface formed whenever a workpiece is held on the surface, and an evaporator inside the electrostatic chuck and a refrigeration loop having an expansion valve for controlling flow of coolant through the evaporator. The reactor further includes a temperature sensor in the electrostatic chuck, a thermal model capable of simulating heat transfer between the evaporator and the surface based upon measurements from the temperature sensor and an agile control processor coupled to the thermal model and governing the backside gas pressure source in response to predictions from the model of changes in the selected pressure that would bring the temperature measured by the sensor closer to a desired temperature.
摘要翻译：具有反应室和具有用于将工件保持在腔室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的背侧气体压力源，用于将选定压力下的导热气体施加到每次形成的工件表面界面中工件被保持在表面上，并且蒸发器位于静电卡盘内部，制冷回路具有用于控制通过蒸发器的冷却剂流动的膨胀阀。反应器还包括静电吸盘中的温度传感器，能够模拟蒸发器和表面之间的热传递的热模型，其基于来自温度传感器和耦合到热模型的敏捷控制处理器的测量，并控制背侧气体压力源响应于来自所选压力的变化模型的预测，其将使由传感器测量的温度更接近所需温度。

98. 发明申请

US20070091537A1 Method for agile workpiece temperature control in a plasma reactor using a thermal model 有权
标题翻译：使用热模型的等离子体反应器中敏捷工件温度控制的方法
公开(公告)号：US20070091537A1
公开(公告)日：2007-04-26
申请号：US11408558
申请日：2006-04-21
申请人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Douglas Buchberger , Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： H01T23/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A method of processing a workpiece in a plasma reactor having an electrostatic chuck for holding a workpiece in a chamber of the reactor includes providing a thermally conductive gas under pressure between a backside of the workpiece and a top surface of the electrostatic chuck, controlling the temperature of the electrostatic chuck, defining a desired workpiece temperature, measuring a current workpiece temperature or temperature related to the workpiece temperature and inputting the measured temperature to a thermal model representative of the electrostatic chuck. The method further includes determining from the thermal model a change in the pressure of the thermally conductive gas that would at least reduce the difference between the measured temperature and the desired temperature, and changing the pressure of the thermally conductive gas in accordance with the change determined from the thermal model.
摘要翻译：在具有用于将工件保持在反应器的室中的静电卡盘的等离子体反应器中处理工件的方法包括在工件的背面和静电卡盘的顶表面之间提供压力下的导热气体，控制温度定义所需的工件温度，测量与工件温度相关的当前工件温度或温度，并将测量温度输入到表示静电吸盘的热模型。该方法还包括根据热模型确定导热气体的压力变化，其将至少减小测量温度和期望温度之间的差异，以及根据确定的变化来改变导热气体的压力从热模型。

99. 发明申请

US20070089834A1 Plasma reactor with a multiple zone thermal control feed forward control apparatus 有权
标题翻译：具有多区域热控制前馈控制装置的等离子体反应器
公开(公告)号：US20070089834A1
公开(公告)日：2007-04-26
申请号：US11408559
申请日：2006-04-21
申请人： Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
发明人： Paul Brillhart , Richard Fovell , Hamid Tavassoli , Douglas Buchberger , Douglas Burns , Kallol Bera , Daniel Hoffman
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/67248 , F25B49/02 , F25B2400/0401 , F25B2400/0403 , F25B2400/0411 , F25B2700/21174 , F25B2700/21175 , H01J37/32091 , H01J37/32183 , H01J37/32724 , H01J2237/2001 , H01L21/67069 , H01L21/67109 , H01L21/6831 , H05H2001/4682
摘要： A plasma reactor having a reactor chamber and an electrostatic chuck having a surface for holding a workpiece inside the chamber includes inner and outer zone backside gas pressure sources coupled to the electrostatic chuck for applying a thermally conductive gas under respective pressures to respective inner and outer zones of a workpiece-surface interface formed whenever a workpiece is held on the surface, and inner and outer evaporators inside respective inner and outer zones of the electrostatic chuck and a refrigeration loop having respective inner and outer expansion valves for controlling flow of coolant through the inner and outer evaporators respectively. The reactor further includes inner and outer zone temperature sensors in inner and outer zones of the electrostatic chuck and a thermal model capable of simulating heat transfer through the inner and outer zones, respectively, between the evaporator and the surface based upon measurements from the inner and outer temperature sensors, respectively. Inner and outer zone agile control processors coupled to the thermal model govern the inner and outer zone backside gas pressure sources, respectively, in response to predictions from the model of changes in the respective pressures that would bring the temperatures measured by the inner and outer zone sensors, respectively, closer to a desired temperature.
摘要翻译：具有反应室和具有用于将工件保持在室内的表面的静电卡盘的等离子体反应器包括耦合到静电卡盘的内部和外部区域背侧气体压力源，用于将相应压力下的导热气体施加到相应的内部和外部区域每当工件保持在表面上时形成的工件表面界面，以及静电卡盘的内部和外部区域内的内部和外部蒸发器，以及具有各自的内部和外部膨胀阀的制冷回路，用于控制冷却剂通过内部和外部蒸发器。反应器还包括静电卡盘的内部和外部区域中的内部和外部区域温度传感器以及能够模拟通过蒸发器和表面之间的内部和外部区域的热传递的热模型，其基于来自内部和外部温度传感器。耦合到热模型的内部和外部区域敏捷控制处理器分别响应于来自模型的各个压力的变化的预测来控制内部和外部区域背侧气体压力源，该模型将使由内部和外部区域测量的温度传感器分别更接近所需的温度。

100. 发明申请

US20070023145A1 APPARATUS TO CONFINE PLASMA AND TO ENHANCE FLOW CONDUCTANCE 有权
标题翻译：设备等离子体和增强流动性的装置
公开(公告)号：US20070023145A1
公开(公告)日：2007-02-01
申请号：US11531479
申请日：2006-09-13
申请人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
发明人： Kallol Bera , Daniel Hoffman , Yan Ye , Michael Kutney , Douglas Buchberger
IPC分类号： C23F1/00
CPC分类号： H01J37/32642 , H01J37/32082 , H01J37/32623 , Y10S156/915
摘要： The embodiments of the present invention generally relate to a plasma reactor. In one embodiment, a plasma reactor includes a substrate support is disposed in a vacuum chamber body and coupled to bias power generator. An RF electrode is disposed above the substrate support and coupled to a very high frequency power generator. A conductive annular ring is disposed on the substrate support and has a lower outer wall, an upper outer wall and an inner wall. A step is extends upward and outward from a lower outer wall and inward and downward from the upper outer wall. The inner wall disposed opposite the upper and lower outer wall. In other embodiments, the annular ring may be fabricated from a conductive material, such as silicon carbide and aluminum.
摘要翻译：本发明的实施方案一般涉及等离子体反应器。在一个实施例中，等离子体反应器包括基板支撑件设置在真空室主体中并耦合到偏置发电机。 RF电极设置在衬底支撑件上方并耦合到非常高频率的发电机。导电环形环设置在基板支撑件上，并具有下外壁，上外壁和内壁。台阶从下外壁向上和向外延伸，并从上外壁向内和向下延伸。内壁与上外壁和下外壁相对设置。在其它实施例中，环形环可以由诸如碳化硅和铝的导电材料制成。

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