专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明申请

US20110291211A1 IMAGE SENSOR AND RELATED FABRICATING METHOD THEREOF 有权
标题翻译：图像传感器及其相关制造方法
公开(公告)号：US20110291211A1
公开(公告)日：2011-12-01
申请号：US12790847
申请日：2010-05-30
申请人： Yu-Ping Hu , Chih-Wei Hsiung , Fang-Ming Huang , Chia-Chi Huang , Chung-Wei Chang
发明人： Yu-Ping Hu , Chih-Wei Hsiung , Fang-Ming Huang , Chia-Chi Huang , Chung-Wei Chang
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14627
摘要： A fabricating method of an image sensor includes the steps of: providing a substrate; forming sensing elements on the substrate; forming microlenses on the sensing elements; filling a stuffed material on the microlenses, and air regions are formed in the stuffed material; and forming optical filters on the stuffed material.
摘要翻译：图像传感器的制造方法包括以下步骤：提供基板; 在所述基板上形成感测元件; 在感测元件上形成微透镜; 将填充材料填充在微透镜上，在填充材料中形成空气区域; 并在填充材料上形成光学滤光器。

12. 发明申请

US20090244427A1 LIQUID CRYSTAL DISPLAY PANEL AND METHOD OF MAKING THE SAME 有权
标题翻译：液晶显示面板及其制造方法
公开(公告)号：US20090244427A1
公开(公告)日：2009-10-01
申请号：US12255640
申请日：2008-10-21
申请人： Chung-Wei Chang
发明人： Chung-Wei Chang
IPC分类号： G02F1/133
CPC分类号： G02F1/136259 , G02F1/13458 , G02F2001/136263
摘要： A liquid crystal display panel includes a first substrate, and a second substrate opposite to and facing the first substrate. The first substrate, having a repairing region and a display region defined thereon, includes at least one repairing wire arranged in the repairing region, and a passivation layer disposed over the repairing wire. The second substrate includes a common electrode, and at least one repairing protection pad formed thereon. The repairing protection pad, disposed on the surface of the common electrode and in the repairing region, faces the first substrate, and corresponds to the repairing wire.
摘要翻译：液晶显示面板包括第一基板和与第一基板相对并面向第二基板的第二基板。具有修复区域和限定在其上的显示区域的第一基板包括布置在修复区域中的至少一个修复线以及设置在修复线上的钝化层。第二基板包括公共电极和形成在其上的至少一个修复保护焊盘。设置在公共电极的表面和修复区域中的修理保护垫面对第一基板，并且对应于修理线。

13. 发明申请

US20090243025A1 PIXEL STRUCTURE WITH A PHOTODETECTOR HAVING AN EXTENDED DEPLETION DEPTH 审中-公开
标题翻译：具有延伸深度深度的光电转换器的像素结构
公开(公告)号：US20090243025A1
公开(公告)日：2009-10-01
申请号：US12054505
申请日：2008-03-25
申请人： Eric G. Stevens , Hung Q. Doan , Shou-Gwo Wuu , Chung-Wei Chang
发明人： Eric G. Stevens , Hung Q. Doan , Shou-Gwo Wuu , Chung-Wei Chang
IPC分类号： H01L31/101
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14689
摘要： An image sensor includes an imaging area that includes a plurality of pixels that are formed in a substrate layer of a first conductivity type. Each pixel includes a collection region that is formed in a portion of the substrate layer and doped with a dopant of a first conductivity type. A plurality of wells are disposed in portions of the substrate layer and doped with another dopant of the second conductivity type. Each well is positioned laterally adjacent to each collection region. A buried layer spans the imaging area and is disposed in a portion of the substrate layer that is beneath the photodetectors and the wells. The buried layer is doped with a dopant of a second conductivity type. Each collection region, each well, and the buried layer are formed such that a region of the substrate layer having substantially the same doping as the substrate layer resides between each collection region and the buried layer.
摘要翻译：图像传感器包括具有形成在第一导电类型的衬底层中的多个像素的成像区域。每个像素包括形成在衬底层的一部分中并掺杂有第一导电类型的掺杂剂的收集区域。多个阱设置在衬底层的部分中并且掺杂有另一种第二导电类型的掺杂剂。每个井横向定位在每个收集区域附近。掩埋层跨越成像区域并且被布置在基底层的位于光电检测器和孔下方的部分中。掩埋层掺杂有第二导电类型的掺杂剂。每个收集区域，每个阱和掩埋层被形成为使得具有与衬底层基本相同的掺杂的衬底层的区域驻留在每个收集区域和掩埋层之间。

14. 发明授权

US06833578B1 Method and structure improving isolation between memory cell passing gate and capacitor 有权
标题翻译：存储单元通过栅极和电容器之间的隔离方法和结构
公开(公告)号：US06833578B1
公开(公告)日：2004-12-21
申请号：US10733216
申请日：2003-12-11
申请人： Kuo-Chi Tu , Chun-Yao Chen , Huey-Chi Chu , Chung-Wei Chang , Tien-Lu Lin , Kuo-Ching Huang , Wen-Cheng Chen , Tsung-Hsun Huang , Hsiao-Hui Tseng
发明人： Kuo-Chi Tu , Chun-Yao Chen , Huey-Chi Chu , Chung-Wei Chang , Tien-Lu Lin , Kuo-Ching Huang , Wen-Cheng Chen , Tsung-Hsun Huang , Hsiao-Hui Tseng
IPC分类号： H01L27108
CPC分类号： H01L28/57 , H01L27/11 , H01L28/90
摘要： A memory cell comprising a capacitor having a dielectric layer interposing first and second vertically disposed electrodes, an insulating lining located over the capacitor, and a transistor gate extension passing over the capacitor. A spacer isolates an end of one of the capacitor electrodes from the transistor gate extension. In one embodiment, the spacer includes a first non-planar profile configured to engage a second non-planar profile comprising ends of the one of the capacitor electrodes and the insulating lining.
摘要翻译：一种存储单元，包括具有插入第一和第二垂直设置的电极的介电层的电容器，位于电容器上方的绝缘衬垫，以及通过电容器的晶体管栅极延伸。间隔件将电容器电极之一的端部与晶体管栅极延伸部隔离。在一个实施例中，间隔件包括构造成接合包括电容器电极之一和绝缘衬里的端部的第二非平面轮廓的第一非平面轮廓。

15. 发明授权

US06764967B2 Method for forming low thermal budget sacrificial oxides 失效
标题翻译：形成低热预算牺牲氧化物的方法
公开(公告)号：US06764967B2
公开(公告)日：2004-07-20
申请号：US10264489
申请日：2002-10-05
申请人： Vincent Pai , Kuo-Chi Tu , Chung-Wei Chang , Chia-Shiung Tsai , Chun-Yao Chen
发明人： Vincent Pai , Kuo-Chi Tu , Chung-Wei Chang , Chia-Shiung Tsai , Chun-Yao Chen
IPC分类号： H01L2131
CPC分类号： H01L21/28238 , H01L21/02238 , H01L21/02255 , H01L21/02299 , H01L21/31675 , Y10S438/906
摘要： A method for forming a silicon dioxide layer over a silicon substrate including providing a substrate having exposed silicon portions; and, forming a silicon dioxide layer over the exposed silicon portions according to an oxide formation process including contacting the exposed silicon portions with an oxidizing solution comprising water and ozone.
摘要翻译：一种在硅衬底上形成二氧化硅层的方法，包括提供具有暴露的硅部分的衬底; 以及根据氧化物形成过程在暴露的硅部分上形成二氧化硅层，包括使暴露的硅部分与包含水和臭氧的氧化溶液接触。

16. 发明授权

US06638813B1 Method of forming a composite spacer to eliminate polysilicon stringers between elements in a pseudo SRAM cell 有权
标题翻译：形成复合间隔物以消除伪SRAM单元中的元件之间的多晶硅桁条的方法
公开(公告)号：US06638813B1
公开(公告)日：2003-10-28
申请号：US10059825
申请日：2002-01-29
申请人： Kuo-Chyuan Tzeng , Chen-Jong Wang , Chung-Wei Chang , Wen-Chuan Chiang , Wen-Cheng Chen , Kuo-Ching Huang
发明人： Kuo-Chyuan Tzeng , Chen-Jong Wang , Chung-Wei Chang , Wen-Chuan Chiang , Wen-Cheng Chen , Kuo-Ching Huang
IPC分类号： H01L218242
CPC分类号： H01L28/60 , H01L21/31111 , H01L21/31116 , H01L21/32137 , H01L21/76232 , H01L27/11
摘要： A process for forming a composite insulator spacer on the sides of a buried stack capacitor structure, wherein the buried stack capacitor structure is located overlying a portion of an insulator filled, shallow trench isolation (STI) region, has been developed. A thin silicon nitride spacer is first formed on the sides of the completed buried stack capacitor structure, followed by deposition of a silicon oxide layer. An anisotropic dry etch procedure is next employed removing a top portion of the silicon oxide layer, and resulting in a partially defined silicon oxide spacer. A critical wet etch procedure is next used to remove the bottom portion of the silicon oxide layer, defining the final silicon oxide spacer of the composite insulator spacer, now comprised of a silicon oxide spacer on an underlying silicon nitride spacer. The wet etch procedure allows a gradual slope to be created at the composite insulator spacer—STI region interface, reducing the risk of leaving, or forming polysilicon residuals or stringers on the underlying surface, which can occur during definition of a MOSFET gate structure. The elimination of the polysilicon stringers reduces the risk of leakage between SRAM cell elements, such as buried stack capacitor structures, and MOSFET devices.
摘要翻译：已经开发了一种用于在掩埋叠层电容器结构的侧面上形成复合绝缘体间隔物的方法，其中埋层叠层电容器结构位于绝缘体填充的浅沟槽隔离（STI）区域的一部分上方。首先在完成的掩埋堆叠电容器结构的侧面上形成薄的氮化硅间隔物，然后沉积氧化硅层。接下来，使用各向异性干蚀刻工艺去除氧化硅层的顶部，并产生部分限定的氧化硅间隔物。接下来使用关键的湿法蚀刻工艺来去除氧化硅层的底部，限定复合绝缘垫片的最终氧化硅隔离物，现在由下面的氮化硅间隔物上的氧化硅间隔物构成。湿蚀刻工艺允许在复合绝缘体间隔件-ST区域界面处产生逐渐的斜率，从而降低在MOSFET栅极结构的定义期间可能发生的在下表面上的离开风险或形成多晶硅残余物或桁条。多晶硅桁架的消除降低了诸如掩埋堆叠电容器结构的SRAM单元元件和MOSFET器件之间的泄漏的风险。

17. 发明授权

US08368160B2 Image sensing device and fabrication thereof 有权
标题翻译：图像感测装置及其制造
公开(公告)号：US08368160B2
公开(公告)日：2013-02-05
申请号：US12898419
申请日：2010-10-05
申请人： Chung-Wei Chang , Fang-Ming Huang , Chi-Shao Lin , Yu-Ping Hu
发明人： Chung-Wei Chang , Fang-Ming Huang , Chi-Shao Lin , Yu-Ping Hu
IPC分类号： H01L31/042
CPC分类号： H01L31/18 , H01L27/14621 , H01L27/1463 , H01L27/14645 , H01L27/14689
摘要： An image sensing device is disclosed, including an epitaxy layer having the a conductivity type, including a first pixel area corresponding to a first incident light, a second pixel area corresponding to a second incident light, and a third pixel area corresponding to a third incident light, wherein the wavelength of the first incident light is longer than that of the second incident light and the wavelength of the second incident light is longer than that of the third incident light. A photodiode is disposed in an upper portion of the epitaxy layer, and a first deep well for reducing pixel-to-pixel talk of the image sensing device is disposed in a lower portion of the epitaxy layer in the second pixel area and the third pixel area, wherein at least a portion of the epitaxy layer in first pixel area does not include the first deep well.
摘要翻译：公开了一种图像感测装置，包括具有导电类型的外延层，包括对应于第一入射光的第一像素区域，对应于第二入射光的第二像素区域和对应于第三入射光的第三像素区域光，其中第一入射光的波长比第二入射光的波长长，第二入射光的波长比第三入射光的波长长。光电二极管设置在外延层的上部，并且用于减少图像感测装置的像素到像素的通话的第一深阱设置在第二像素区域中的外延层的下部和第三像素区域，其中第一像素区域中的外延层的至少一部分不包括第一深孔。

18. 发明申请

US20110278687A1 BACKSIDE-ILLUMINATED SENSOR WITH NOISE REDUCTION 审中-公开
标题翻译：带噪声的背光照明传感器
公开(公告)号：US20110278687A1
公开(公告)日：2011-11-17
申请号：US12781785
申请日：2010-05-17
申请人： Fang-Ming Huang , Ping-Hung Yin , Chung-Wei Chang
发明人： Fang-Ming Huang , Ping-Hung Yin , Chung-Wei Chang
IPC分类号： H01L31/0232 , H01L31/00
CPC分类号： H01L27/14643 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14641 , H01L28/86
摘要： A backside-illuminated sensor includes a substrate, at least one lens and at least one pixel structure. The substrate has a front surface and a backside surface, and the lens is formed on the backside surface of the substrate and the pixel structure is formed on a pixel area included in the front surface of the substrate, where a projected area of the pixel area on the backside surface in a thickness direction of the substrate is covered by the lens. The pixel structure includes a first power node for receiving a first supply voltage, a second power node for receiving a second supply voltage different from the first supply voltage, a sensing element and a capacitor for noise reduction. The sensing element generates a sensing signal according to an incident luminance from the lens.
摘要翻译：背面照明传感器包括基底，至少一个透镜和至少一个像素结构。基板具有前表面和背面，透镜形成在基板的背面，并且像素结构形成在基板前表面的像素区域上，像素区域的投影面积在基板的厚度方向的背面上被透镜覆盖。像素结构包括用于接收第一电源电压的第一电源节点，用于接收不同于第一电源电压的第二电源电压的第二电源节点，用于降噪的电容器。感测元件根据来自透镜的入射亮度产生感测信号。

19. 发明申请

US20100221865A1 Crosstalk Improvement Through P On N Structure For Image Sensor 有权
标题翻译：通过P图像传感器的N结构进行串扰改善
公开(公告)号：US20100221865A1
公开(公告)日：2010-09-02
申请号：US12780625
申请日：2010-05-14
申请人： Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
发明人： Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
IPC分类号： H01L31/18
CPC分类号： H01L27/1463 , H01L21/761 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H01L27/14689 , H01L31/035272
摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.
摘要翻译：本公开提供了一种图像传感器半导体器件。半导体器件包括具有第一类掺杂剂的半导体衬底; 半导体层，其具有不同于所述第一类型掺杂剂的第二类型的掺杂剂并且设置在所述半导体衬底上; 以及形成在半导体层中的图像传感器。

20. 发明授权

US07388187B1 Cross-talk reduction through deep pixel well implant for image sensors 有权
标题翻译：通过图像传感器的深像素阱植入进行串扰减少
公开(公告)号：US07388187B1
公开(公告)日：2008-06-17
申请号：US11682428
申请日：2007-03-06
申请人： Han-Chi Liu , Chung-Wei Chang , Shou-Gwo Wuu , Tong-Chern Ong , Chun-Yao Ko
发明人： Han-Chi Liu , Chung-Wei Chang , Shou-Gwo Wuu , Tong-Chern Ong , Chun-Yao Ko
IPC分类号： H01L31/00
CPC分类号： H01L27/14654 , H01L27/1463
摘要： An image sensor device includes a semiconductor substrate having a first type of conductivity, a semiconductor layer having the first type of conductivity formed on the semiconductor substrate, and pixels formed in the semiconductor layer. The semiconductor layer includes a first deep well having the first type of conductivity and substantially underlying the plurality of pixels, and a second deep well having a second type of conductivity different from the first type of conductivity and substantially underlying the first deep well.
摘要翻译：图像传感器装置包括具有第一导电类型的半导体衬底，在半导体衬底上形成具有第一类型导电性的半导体层和形成在半导体层中的像素。半导体层包括具有第一类型导电性并且基本上位于多个像素下面的第一深阱，以及具有不同于第一类型导电性的第二类型导电性并且基本上位于第一深阱的第二深阱。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式