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11. 发明申请

US20090206385A1 NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME 有权
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US20090206385A1
公开(公告)日：2009-08-20
申请号：US12370792
申请日：2009-02-13
申请人： Tae-Whan KIM , Kae-Dal KWACK , Sang-Su PARK
发明人： Tae-Whan KIM , Kae-Dal KWACK , Sang-Su PARK
IPC分类号： H01L29/788 , H01L29/792
CPC分类号： H01L29/7887 , H01L21/28273 , H01L21/28282 , H01L29/42332 , H01L29/66825 , H01L29/66833 , H01L29/7923
摘要： A non-volatile memory device includes a semiconductor substrate, first and second control gates, and first and second charge storage patterns. The semiconductor substrate includes a protruding active pin having a source region, a drain region and a channel region located between the source and drain regions. The first control gate is located on a first sidewall of the channel region, and the second control gate is located on a second sidewall of the channel region. The second control gate is separated from the first control gate. The first charge storage pattern is located between the first sidewall and the first control gate, and the second charge storage pattern is located between the second sidewall and the second control gate.
摘要翻译：非易失性存储器件包括半导体衬底，第一和第二控制栅极以及第一和第二电荷存储模式。半导体衬底包括具有源极区，漏极区和位于源极和漏极区之间的沟道区的突出的有源管脚。第一控制栅极位于沟道区的第一侧壁上，第二控制栅位于沟道区的第二侧壁上。第二控制栅极与第一控制栅极分离。第一电荷存储图案位于第一侧壁和第一控制栅极之间，第二电荷存储图案位于第二侧壁和第二控制栅极之间。

12. 发明申请

US20080007170A1 Organic light emitting diode display and manufacturing method thereof 有权
标题翻译：有机发光二极管显示及其制造方法
公开(公告)号：US20080007170A1
公开(公告)日：2008-01-10
申请号：US11647880
申请日：2006-12-29
申请人： Tae-Whan Kim , Dong-Chul Choo , Chang-Uk Kim
发明人： Tae-Whan Kim , Dong-Chul Choo , Chang-Uk Kim
IPC分类号： H01L51/52 , H01L51/54
CPC分类号： H01L51/5012 , Y10T428/24942
摘要： According to an embodiment of the present invention, an OLED display includes a substrate, a first electrode, a hole transport layer, a hole blocking layer, an emitting layer, and a second electrode. The first electrode is formed on the substrate. The hole transport layer is formed on the first electrode and includes a first material having a first highest occupied molecular orbital (HOMO) level and a first lowest unoccupied molecular orbital (LUMO) level. The hole blocking layer is formed on the hole transport layer and includes a second material having a second HOMO level and a second LUMO level. The emitting layer is formed on the hole blocking layer and includes a third material having a third HOMO level and a third LUMO level. The second electrode is formed on the emitting layer. Herein, the second HOMO level is higher than the first HOMO level and the third HOMO level.
摘要翻译：根据本发明的实施例，OLED显示器包括基板，第一电极，空穴传输层，空穴阻挡层，发光层和第二电极。第一电极形成在基板上。空穴传输层形成在第一电极上并且包括具有第一高占据分子轨道（HOMO）水平和第一最低未占分子轨道（LUMO）水平的第一材料。空穴阻挡层形成在空穴传输层上，并且包括具有第二HOMO能级和第二LUMO能级的第二材料。发光层形成在空穴阻挡层上，并且包括具有第三HOMO能级和第三LUMO能级的第三材料。第二电极形成在发光层上。这里，第二HOMO级别高于第一HOMO级别和第三HOMO级别。

13. 发明申请

US20070269916A1 ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD 审中-公开
标题翻译：有机发光二极管显示和制造方法
公开(公告)号：US20070269916A1
公开(公告)日：2007-11-22
申请号：US11688727
申请日：2007-03-20
申请人： Tae-Whan KIM , Young-Bae Yoon
发明人： Tae-Whan KIM , Young-Bae Yoon
IPC分类号： B32B9/00 , H01L21/00
CPC分类号： H01L51/5048 , H01L51/0054 , H01L51/006 , H01L51/0077 , H01L51/0081
摘要： An organic light emitting diode (OLED) display includes a substrate, a first electrode disposed on the substrate, a second electrode facing the first electrode, an emission layer disposed between the first electrode and the second electrode, and a hole transport layer disposed between the first electrode and the emission layer. The hole transport layer includes a first hole transport layer comprised of a first material, a second hole transport layer comprised of a combination of the first material and a second material, and a third hole transport layer comprised of the first material. The second material has a different band gap energy from that of the first material, and the second hole transport layer and the third hole transport layer are alternately and repeatedly disposed.
摘要翻译：有机发光二极管（OLED）显示器包括基板，设置在基板上的第一电极，面对第一电极的第二电极，设置在第一电极和第二电极之间的发射层，以及设置在第一电极和第二电极之间的空穴传输层第一电极和发射层。空穴传输层包括由第一材料构成的第一空穴传输层，由第一材料和第二材料的组合构成的第二空穴传输层和由第一材料组成的第三空穴传输层。第二材料具有与第一材料的能隙不同的带隙能量，并且第二空穴传输层和第三空穴传输层交替重复地设置。

14. 发明申请

US20070048548A1 Organic light emitting device and manufacturing method thereof 审中-公开
标题翻译：有机发光器件及其制造方法
公开(公告)号：US20070048548A1
公开(公告)日：2007-03-01
申请号：US11507778
申请日：2006-08-22
申请人： Tae-Whan Kim , Young-Bae Yoon
发明人： Tae-Whan Kim , Young-Bae Yoon
IPC分类号： H01L51/54 , H01L51/52
CPC分类号： H01L51/5096 , H01L51/0054 , H01L51/0077 , H01L51/0081 , H01L51/5012 , Y10T428/24942
摘要： A hole blocking layer, having a multiple hetero-structure such that materials, each with a different doping density, are stacked repeatedly, is formed between a hole transport layer and an electron transport layer. An organic light emitting device and its manufacturing method can enhance luminous efficiency and color stability having the abovementioned hole blocking layer.
摘要翻译：在空穴传输层和电子传输层之间形成具有多重异质结构的空穴阻挡层，使得各自具有不同掺杂密度的材料重复堆叠。有机发光器件及其制造方法可以提高具有上述空穴阻挡层的发光效率和颜色稳定性。

15. 发明申请

US20060290270A1 Organic light emitting device and manufacturing method thereof 有权
标题翻译：有机发光器件及其制造方法
公开(公告)号：US20060290270A1
公开(公告)日：2006-12-28
申请号：US11475791
申请日：2006-06-27
申请人： Tae-Whan Kim , Dong-Chul Chod , Hee-Cheol Im
发明人： Tae-Whan Kim , Dong-Chul Chod , Hee-Cheol Im
IPC分类号： H05B33/00 , H01J1/62
CPC分类号： H05B33/26 , H01L51/0081 , H01L51/5221 , H01L2251/5346
摘要： An organic light emitting device according to embodiment of the present invention comprises: a substrate; a first electrode formed on the substrate; a light-emitting member formed on the first electrode, and comprising multi-layer structure; and a second electrode formed on the light-emitting member, wherein the second electrode comprises Mg—Ag alloy which contains Mg of 1-10 wt % and a concentration gradient of the Mg—Ag alloy is formed from the top of the emitting-light member.
摘要翻译：根据本发明实施例的有机发光器件包括：衬底; 形成在所述基板上的第一电极; 形成在所述第一电极上并且包括多层结构的发光构件; 以及形成在所述发光部件上的第二电极，其中所述第二电极包含含有1-10重量％的Mg的Mg-Ag合金，并且所述Mg-Ag合金的浓度梯度由所述发光的顶部形成会员。

16. 发明授权

US08816944B2 Driving current output apparatus, method of manufacturing the same, display device and driving apparatus thereof 有权
标题翻译：驱动电流输出装置及其制造方法，显示装置及其驱动装置
公开(公告)号：US08816944B2
公开(公告)日：2014-08-26
申请号：US11453529
申请日：2006-06-15
申请人： Tae-Whan Kim , Kae-Dal Kwack , Hong-Jae Shin
发明人： Tae-Whan Kim , Kae-Dal Kwack , Hong-Jae Shin
IPC分类号： G09G3/30
CPC分类号： G09G3/3283 , G09G3/2014 , G09G3/3216 , G09G2320/0233
摘要： A display device, which includes a plurality of pixels; a data driver for outputting data signals to the pixels; a bias current outputting unit for outputting a bias current having a predetermined magnitude; a plurality of driving current outputting units for outputting driving currents to the pixels; and a first switch connected between the bias current outputting unit and the driving current outputting units for selecting one of the driving current outputting units to connect to the bias current outputting unit, wherein the magnitudes of the driving currents are substantially the same as a magnitude of the bias current.
摘要翻译：一种显示装置，包括多个像素; 用于将数据信号输出到像素的数据驱动器; 偏置电流输出单元，用于输出具有预定大小的偏置电流; 多个驱动电流输出单元，用于向像素输出驱动电流; 以及第一开关，连接在所述偏置电流输出单元和所述驱动电流输出单元之间，用于选择所述驱动电流输出单元中的一个连接到所述偏置电流输出单元，其中所述驱动电流的大小基本上与偏置电流。

17. 发明申请

US20110069555A1 NON-VOLATILE MEMORY DEVICE AND METHOD OF OPERATING THE SAME 有权
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US20110069555A1
公开(公告)日：2011-03-24
申请号：US12955984
申请日：2010-11-30
申请人： Tae-Whan Kim , Kae-Dal Kwack , Sang-Su Park
发明人： Tae-Whan Kim , Kae-Dal Kwack , Sang-Su Park
IPC分类号： G11C16/26 , G11C16/10
CPC分类号： H01L29/7887 , H01L21/28273 , H01L21/28282 , H01L29/42332 , H01L29/66825 , H01L29/66833 , H01L29/7923
摘要： A non-volatile memory device includes a semiconductor substrate, first and second control gates, and first and second charge storage patterns. The semiconductor substrate includes a protruding active pin having a source region, a drain region and a channel region located between the source and drain regions. The first control gate is located on a first sidewall of the channel region, and the second control gate is located on a second sidewall of the channel region. The second control gate is separated from the first control gate. The first charge storage pattern is located between the first sidewall and the first control gate, and the second charge storage pattern is located between the second sidewall and the second control gate.
摘要翻译：非易失性存储器件包括半导体衬底，第一和第二控制栅极以及第一和第二电荷存储模式。半导体衬底包括具有源极区，漏极区和位于源极和漏极区之间的沟道区的突出的有源管脚。第一控制栅极位于沟道区的第一侧壁上，第二控制栅位于沟道区的第二侧壁上。第二控制栅极与第一控制栅极分离。第一电荷存储图案位于第一侧壁和第一控制栅极之间，第二电荷存储图案位于第二侧壁和第二控制栅极之间。

18. 发明授权

US07615446B2 Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof 有权
标题翻译：电荷阱闪存器件及其制造方法及其读/写操作控制方法
公开(公告)号：US07615446B2
公开(公告)日：2009-11-10
申请号：US11580102
申请日：2006-10-13
申请人： Tae-whan Kim , Young-ho Kim , Jae-ho Kim , Jea-hun Jung , Chong-seung Yoon
发明人： Tae-whan Kim , Young-ho Kim , Jae-ho Kim , Jea-hun Jung , Chong-seung Yoon
IPC分类号： H01L21/336
CPC分类号： H01L29/42332 , B82Y10/00 , H01L29/7887
摘要： In one aspect, a charge trap flash memory device is provided which includes a semiconductor substrate, source and drain regions which are spaced apart in an active region of the semiconductor substrate to define a channel region therebetween, a tunneling dielectric layer located on the channel region, an organic polymer thin film located on the tunneling dielectric layer, metal or metal oxide nano-crystals embedded in the organic polymer thin film, and a gate located on the organic polymer thin film.
摘要翻译：一方面，提供了一种电荷阱闪存器件，其包括半导体衬底，在半导体衬底的有源区域中间隔开的源极和漏极区域，以在其间限定沟道区域，位于沟道区域上的隧道电介质层位于隧道电介质层上的有机聚合物薄膜，嵌入有机聚合物薄膜中的金属或金属氧化物纳米晶体，以及位于有机聚合物薄膜上的栅极。

19. 发明申请

US20090108327A1 Gate pattern having two control gates, flash memory including the gate pattern and methods of manufacturing and operating the same 审中-公开
标题翻译：具有两个控制栅极的栅极图案，包括栅极图案的闪存，以及制造和操作该栅极图案的方法
公开(公告)号：US20090108327A1
公开(公告)日：2009-04-30
申请号：US12289300
申请日：2008-10-24
申请人： Tae-Whan Kim , Kyeong-Rock Kim , Kae-Dal Kwack
发明人： Tae-Whan Kim , Kyeong-Rock Kim , Kae-Dal Kwack
IPC分类号： H01L29/788
CPC分类号： H01L29/42324 , H01L27/11519 , H01L29/40114 , H01L29/66825
摘要： Provided may be a gate pattern, flash memory and methods of manufacturing and operating the same. A gate pattern may include a floating gate on a tunneling dielectric layer, an inter-gate dielectric layer on the floating gate, a first control gate on the inter-gate dielectric layer, and a second control gate on the inter-gate dielectric layer and spaced apart from the first control gate. Each of the control gates sets four states according to an application time of a program voltage applied to the control gates. Thus, one control gate may program 2-bit data.
摘要翻译：提供可以是栅极图案，闪存及其制造和操作方法。栅极图案可以包括隧道电介质层上的浮动栅极，浮置栅极上的栅极间介电层，栅极间电介质层上的第一控制栅极和栅极间电介质层上的第二控制栅极，以及与第一控制门间隔开。每个控制门根据施加到控制门的编程电压的施加时间来设置四个状态。因此，一个控制门可以编程2位数据。

20. 发明申请

US20070241326A1 ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：有机发光二极管显示及其制造方法
公开(公告)号：US20070241326A1
公开(公告)日：2007-10-18
申请号：US11736982
申请日：2007-04-18
申请人： Tae-Whan Kim , Kyoung-Phil Kim , Dong-Chul Choo , Sang-Min Han , Dae-Uk Lee
发明人： Tae-Whan Kim , Kyoung-Phil Kim , Dong-Chul Choo , Sang-Min Han , Dae-Uk Lee
IPC分类号： H01L29/08
CPC分类号： H01L51/5275
摘要： An organic light emitting device and manufacturing method thereof includes a substrate; a first electrode formed on the substrate; a second electrode formed on the first electrode; an light emitting member interposed between the first electrode and the second electrode; and a photonic crystal member disposed in proximity to the substrate.
摘要翻译：一种有机发光器件及其制造方法，包括：基板; 形成在所述基板上的第一电极; 形成在第一电极上的第二电极; 插入在所述第一电极和所述第二电极之间的发光部件; 以及设置在所述基板附近的光子晶体部件。

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