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21. 发明授权

US5117335A Headlight for vehicle 失效
标题翻译：车辆头灯
公开(公告)号：US5117335A
公开(公告)日：1992-05-26
申请号：US625193
申请日：1990-12-10
申请人： Masaru Yamada
发明人： Masaru Yamada
IPC分类号： B60Q1/00 , B60Q1/068 , F21V5/00 , F21V17/00
CPC分类号： F21S48/25 , B60Q1/0041 , B60Q1/0683 , F21S48/1208 , F21S48/1216 , F21S48/1233 , F21S48/335
摘要： A vehicular headlight having an inner lens and a hood, which is painted to block light, integrally made of a light-transmissible resin so that no opening is formed between the inner lens and the hood. As a result, no light can leak through such an opening, and the adjustment gap between the inner lens and reflector cannot be seen through the opening. Since the inner lens and the hood are constituted by a single component, the number of components of the headlight is reduced to decrease the number of steps of assembly thereof.
摘要翻译：一种具有内透镜和罩的车辆前照灯，其被透光树脂整体制成，以防止在内透镜和罩之间形成开口。结果，没有光可以通过这样的开口泄漏，并且内透镜和反射器之间的调节间隙不能通过开口看到。由于内透镜和罩由单个部件构成，所以前照灯的部件数量减少，从而减少其组装步骤。

22. 发明授权

US5021930A Automotive headlamp having reduced chromatic aberration 失效
标题翻译：汽车前照灯减少了色差
公开(公告)号：US5021930A
公开(公告)日：1991-06-04
申请号：US580746
申请日：1990-09-11
申请人： Masaru Yamada
发明人： Masaru Yamada
IPC分类号： F21S8/10 , B60Q1/00 , F21S8/12 , F21V5/00 , F21V13/00 , F21V17/00
CPC分类号： B60Q1/0041 , F21S48/10 , F21S48/1233 , F21S48/1258 , F21S48/145 , F21S48/25
摘要： The present invention relates to an automotive headlamp construction in which chromatic aberation is substantially eliminated. The headlamp includes an elliptic reflector, a light source disposed at a first focal point of the elliptic reflector, a condenser lens which is focused generally at a second focal point of the elliptic reflector, and an outer lens provided in front of the condenser lens. In accordance with the invention, the radius of curvature of the outer lens is reduced at a vertically middle portion thereof to form an angled portion through which light from the light source passes. The angled portion acts as a lens having a focal length such that chromatic aberration of the condenser lens is canceled out.
摘要翻译：本发明涉及基本上消除了色差的汽车前照灯结构。前照灯包括椭圆形反射器，设置在椭圆形反射器的第一焦点处的光源，大体上聚焦在椭圆形反射器的第二焦点处的聚光透镜，以及设置在聚光透镜前面的外部透镜。根据本发明，外透镜的曲率半径在其垂直中间部分处减小，以形成来自光源的光通过的倾斜部分。成角度的部分用作具有聚焦透镜的色差被抵消的焦距的透镜。

23. 发明授权

US4529696A Process for liquefaction of starch 失效
标题翻译：淀粉液化过程
公开(公告)号：US4529696A
公开(公告)日：1985-07-16
申请号：US509586
申请日：1983-06-30
申请人： Yoshiyuki Takasaki , Yoshimasa Takahara , Chikashi Izumi , Atsushi Mori , Masahiko Nishiguchi , Masaru Yamada
发明人： Yoshiyuki Takasaki , Yoshimasa Takahara , Chikashi Izumi , Atsushi Mori , Masahiko Nishiguchi , Masaru Yamada
IPC分类号： C12P19/14 , C12R1/07 , C13K1/06 , C13K7/00 , C12P19/20
CPC分类号： C13K1/06 , C12P19/14 , C13K7/00
摘要： A liquid starch solution suitable for saccharification into a maltose-containing product is obtained by suspending starch in water, adding to the starch suspension a heat resistant .alpha.-amylase and a carbonate, adjusting the resultant mixture to a pH value in the range of from 7.5 to 8.0, and thermally treating the resultant starch milk while repressing possible hydrolysis of starch molecules.
摘要翻译：通过将淀粉悬浮于水中，将淀粉悬浮液加入到耐热的α-淀粉酶和碳酸盐中，将得到的混合物调节至7.5的pH值，从而获得适用于糖化成含麦芽糖的产品的液态淀粉溶液至8.0，并对所得淀粉乳进行热处理，同时抑制淀粉分子的可能水解。

24. 发明授权

US3972777A Method for recovery of refined .alpha.-galactosidase 失效
标题翻译：回收精制{60-半乳糖苷酶的方法
公开(公告)号：US3972777A
公开(公告)日：1976-08-03
申请号：US572944
申请日：1975-04-30
申请人： Masaru Yamada , Tsutomu Furuya , Chikashi Izumi , Shigeyoshi Narita , Hiroshi Ishikawa
发明人： Masaru Yamada , Tsutomu Furuya , Chikashi Izumi , Shigeyoshi Narita , Hiroshi Ishikawa
IPC分类号： C12N9/40 , C07G7/028
CPC分类号： C12N9/2465 , Y10S435/815
摘要： A method for the recovery of refined .alpha.-galactosidase is disclosed. This method comprises the steps of bringing an .alpha.-galactosidase-containing liquid into contact with a weakly acidic cation-exchange resin in the presence of a buffer solution for thereby allowing .alpha.-galactosidase to be selectively adsorbed by said resin, desorbing the adsorbed .alpha.-galactosidase from said resin by use of a buffer solution of a type such that at least one of the two factors, concentration and pH, has a higher value than that of the buffer solution used in said adsorption and thereafter recovering the desorbed .alpha.-galactosidase.
摘要翻译：公开了一种回收精制α-半乳糖苷酶的方法。该方法包括在缓冲溶液存在下使含有α-半乳糖苷酶的液体与弱酸性阳离子交换树脂接触的步骤，从而使α-半乳糖苷酶被所述树脂选择性吸附，解吸所吸附的α- 通过使用这样的缓冲溶液使得所述树脂的半乳糖苷酶的浓度和pH值中的至少一个比所述吸附中使用的缓冲溶液的值高，然后回收解吸的α-半乳糖苷酶。

25. 发明授权

US07276769B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US07276769B2
公开(公告)日：2007-10-02
申请号：US10817861
申请日：2004-04-06
申请人： Masaru Yamada , Yasutoshi Okuno
发明人： Masaru Yamada , Yasutoshi Okuno
IPC分类号： H01L29/72
CPC分类号： H01L27/0207
摘要： In a semiconductor integrated circuit device, semiconductor elements formed in active regions included in a first element formation portion (stress transition region) in a peripheral circuit formation portion are not electrically driven, while only semiconductor elements of a second element formation portion (steady stress region) are electrically driven. Therefore, the second element formation portion in the peripheral circuit formation portion is located away from an outer STI region so as to be hardly affected by compressive stress.
摘要翻译：在半导体集成电路器件中，形成在周边电路形成部分的第一元件形成部分（应力过渡区域）中的有源区域中形成的半导体元件不被电驱动，而只有第二元件形成部分的半导体元件（稳定应力区域）是电驱动的。因此，周边电路形成部中的第二元件形成部位远离外侧STI区域，难以受到压缩应力的影响。

26. 发明申请

US20060131662A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20060131662A1
公开(公告)日：2006-06-22
申请号：US11258034
申请日：2005-10-26
申请人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
发明人： Masaru Yamada , Masafumi Tsutsui , Kiyoyuki Morita
IPC分类号： H01L21/8238
CPC分类号： H01L21/76816 , H01L21/76843 , H01L21/76877 , H01L21/823807 , H01L21/823871 , H01L23/485 , H01L29/7842 , H01L29/7845 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor comprises an n-channel transistor forming region and a p-channel transistor forming region, which are disposed while being sectioned by an element isolation region. The stress caused by contact plugs in the n-channel transistor forming region and the stress caused by contact plugs in the p-channel transistor forming region are made different from each other. With this, it enables to increase the drive current of both the n-channel transistor and p-channel transistor without changing the dimensions of the active region and the element isolation region.
摘要翻译：半导体包括n沟道晶体管形成区域和p沟道晶体管形成区域，它们被元件隔离区域划分。在n沟道晶体管形成区域中由接触插塞引起的应力和由p沟道晶体管形成区域中的接触插塞引起的应力彼此不同。由此，能够增加n沟道晶体管和p沟道晶体管的驱动电流，而不改变有源区和元件隔离区的尺寸。

27. 发明申请

US20050285217A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050285217A1
公开(公告)日：2005-12-29
申请号：US11006665
申请日：2004-12-08
申请人： Yasutoshi Okuno , Masaru Yamada
发明人： Yasutoshi Okuno , Masaru Yamada
IPC分类号： H01L21/3105 , H01L21/76 , H01L21/762 , H01L27/02 , H01L29/00
CPC分类号： H01L21/31053 , H01L21/76229 , H01L27/0207
摘要： A semiconductor device includes a circuit formation region which is formed in a semiconductor substrate and includes a plurality of element formation regions surrounded by isolation regions, respectively. A stress effect relief region of a predetermined width is formed around the circuit formation region to relieve a stress effect of the isolation regions on the operation characteristics of elements formed in the element formation regions and a plurality of dummy features are formed in the stress effect relief region and other part of the circuit formation region than the element formation regions at predetermined distances, the dummy features having the same composition as the element formation regions and predetermined planar dimensions. The predetermined planar dimensions of the dummy features are defined by longitudinal and transverse dimensions most frequently found in the plurality of element formation regions formed in the circuit formation region or selected dimensions of the element formation regions. The predetermined distances between the dummy features are specified as the minimum allowable value in respect of the manufacture of the elements.
摘要翻译：半导体器件包括电路形成区域，其形成在半导体衬底中并且包括被隔离区包围的多个元件形成区域。在电路形成区域的周围形成预定宽度的应力作用缓和区域，以减轻隔离区域对形成在元件形成区域中的元件的操作特性的应力作用，并且在应力效应释放中形成多个虚拟特征区域和电路形成区域的其他部分比元件形成区域预定距离，虚拟特征具有与元件形成区域相同的组成和预定的平面尺寸。虚拟特征的预定平面尺寸由在电路形成区域中形成的多个元件形成区域或元件形成区域的选定尺寸中最常见的纵向和横向尺寸限定。虚拟特征之间的预定距离被指定为关于元件的制造的最小允许值。

28. 发明授权

US06791182B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US06791182B2
公开(公告)日：2004-09-14
申请号：US10103799
申请日：2002-03-25
申请人： Junpei Kusukawa , Ryozo Takeuchi , Toshiaki Ishii , Hiromichi Suzuki , Fujio Ito , Takafumi Nishita , Akihiko Kameoka , Masaru Yamada
发明人： Junpei Kusukawa , Ryozo Takeuchi , Toshiaki Ishii , Hiromichi Suzuki , Fujio Ito , Takafumi Nishita , Akihiko Kameoka , Masaru Yamada
IPC分类号： H01L2310
CPC分类号： H01L23/564 , H01L23/3128 , H01L23/4334 , H01L23/49582 , H01L23/49816 , H01L23/49866 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/49171 , H01L2224/73265 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01076 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/07802 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： At least a part of the inner leads 1a of a lead frame 1 is covered with a plating for a metallic fine wire connection, at least the entire portion where the lead frame 1 joins with the adhesive layer 2 is covered by at least one metal or alloy thereof different from the metallic fine wire connecting use plating. The metal or alloy is selected from the group consisting of gold, platinum, iridium, rhodium, palladium, ruthenium, indium, tin, molybdenum, tungsten, gallium, zinc, chromium, niobium, tantalum, titanium and zirconium. Thereby, generation of defects, such as leakage and shorting, due to ion migration can be prevented.
摘要翻译：引线框架1的内部引线1a的至少一部分被用金属细线连接的电镀覆盖，至少引线框架1与粘合剂层2连接的整个部分被至少一种金属或它们与金属细线不同的连接用电镀的合金。金属或合金选自金，铂，铱，铑，钯，钌，铟，锡，钼，钨，镓，锌，铬，铌，钽，钛和锆。因此，可以防止由于离子迁移而产生诸如泄漏和短路的缺陷。

29. 发明授权

US06279376B1 Gas sensor for vehicle engine having a double-pipe cover 有权
标题翻译：具有双管盖的车用发动机气体传感器
公开(公告)号：US06279376B1
公开(公告)日：2001-08-28
申请号：US09405837
申请日：1999-09-27
申请人： Masaru Yamada , Kengo Toguchi , Hidetaka Hayashi , Satoshi Nakamura , Hiroo Imamura , Daisuke Makino
发明人： Masaru Yamada , Kengo Toguchi , Hidetaka Hayashi , Satoshi Nakamura , Hiroo Imamura , Daisuke Makino
IPC分类号： G01N27407
CPC分类号： G01N27/4077
摘要： A gas sensor has a housing, a gas sensing element held by the housing and having a gas contact portion and an element cover for covering the gas contact portion. The element cover has a double pipe structure formed by layering an outer pipe and an inner pipe. The outer pipe has an outer bottom portion having an outer bottom hole and an outer side portion having plural outer side holes. The inner pipe has an inner bottom portion having an inner bottom hole and an inner side portion having plural inner side holes disposed not to overlap the outer side holes. A spacing D of 0.2-1.0 mm is formed between the outer bottom portion and the inner bottom portion. As a result, flow resistance in the spacing D is relatively high, and the sample gas sufficiently and more smoothly flows toward the gas sensing element. Therefore, the element cover prevents condensed water from entering the inside of the gas sensor and improves response of the gas sensor.
摘要翻译：气体传感器具有壳体，由壳体保持的气体感测元件，并具有气体接触部分和用于覆盖气体接触部分的元件盖。元件盖具有通过分层外管和内管形成的双管结构。外管具有外底部的外底部和具有多个外侧孔的外侧部。内管具有内底部底部和内侧部分，内侧部分具有多个设置成不与外侧孔重叠的内侧孔。在外底部和内底部之间形成间距D为0.2-1.0mm。结果，间隔D中的流动阻力相对较高，并且样品气体充分且更平稳地流向气体感测元件。因此，元件盖防止冷凝水进入气体传感器的内部并改善气体传感器的响应。

30. 发明授权

US4182634A Process for purifying maltose solution 失效
标题翻译：麦芽糖溶液纯化方法
公开(公告)号：US4182634A
公开(公告)日：1980-01-08
申请号：US898073
申请日：1978-04-20
申请人： Masaru Yamada , Atsushi Mori , Yoshiyasu Sato , Kenichi Terayama , Shogo Miyatani
发明人： Masaru Yamada , Atsushi Mori , Yoshiyasu Sato , Kenichi Terayama , Shogo Miyatani
IPC分类号： C08L5/00 , C13K7/00 , C13D3/12
CPC分类号： C13K7/00
摘要： From a maltose solution of a purity of 75 to 90%, a high-purity maltose solution having a maltose purity of more than 98.5% is obtained in a high yield by preparatorily treating activated carbon with the aqueous solution of an organic solvent, adding the same organic solvent to the maltose solution under treatment until the concentration of the organic solvent equals that in the aqueous solution used for the treatment of the activated carbon, and subsequently bringing the resultant solution into contact with the activated carbon for thereby allowing the activated carbon to adsorb selectively out of the solution only the saccharides such as maltotriose and maltotetraose which are composed of three or more glucoses.
摘要翻译：从纯度为75〜90％的麦芽糖溶液，通过用有机溶剂的水溶液预处理活性炭，以高产率获得麦芽糖纯度高于98.5％的高纯度麦芽糖溶液，加入与处理的麦芽糖溶液相同的有机溶剂，直到有机溶剂的浓度等于用于处理活性炭的水溶液的浓度，随后使所得溶液与活性炭接触，从而使活性炭从溶液中仅选择由三种或更多种葡萄糖组成的糖类如麦芽三糖和麦芽四糖。

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