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31. 发明授权

US08216905B2 Stress engineering to reduce dark current of CMOS image sensors 有权
标题翻译：应力工程可以减少CMOS图像传感器的暗电流
公开(公告)号：US08216905B2
公开(公告)日：2012-07-10
申请号：US12768063
申请日：2010-04-27
申请人： Ru-Shang Hsiao , Nai-Wen Cheng , Chung-Te Lin , Chien-Hsien Tseng , Shou-Gwo Wuu
发明人： Ru-Shang Hsiao , Nai-Wen Cheng , Chung-Te Lin , Chien-Hsien Tseng , Shou-Gwo Wuu
IPC分类号： H01L21/336
CPC分类号： H01L27/1463 , H01L21/324 , H01L21/823878 , H01L22/34 , H01L27/14689 , H01L29/7842
摘要： The active pixel cell structures and methods of preparing such structures described above enable reduction of dark current and white cell counts for active pixel cells. The process of preparing active pixel cell structures introduces stress on the substrate, which could lead to increased dark current and white cell counts of active pixel cells. By depositing a stress layer as part of a pre-metal dielectric layer with a stress that counters the stress induced, both the dark current and the white cell counts can be reduced. If the transistors of the active pixel cells are NMOS, the carrier mobility can also be increased by a tensile stress layer. Raman Spectroscopy can be used to measure the stress exerted on the substrate prior to the deposition of the stress layer.
摘要翻译：上述有源像素单元结构和制备这种结构的方法能够减少有源像素单元的暗电流和白细胞计数。制备有源像素单元结构的过程在衬底上引入应力，这可能导致有源像素单元的暗电流和白细胞计数增加。通过沉积应力层作为预金属介电层的一部分，其应力引起应力，暗电流和白细胞计数都可以减小。如果有源像素单元的晶体管是NMOS，则载流子迁移率也可以通过拉伸应力层增加。拉曼光谱可用于测量在沉积应力层之前施加在基底上的应力。

32. 发明授权

US07649231B2 Asymmetrical reset transistor with double-diffused source for CMOS image sensor 有权
标题翻译： CMOS图像传感器双扩散源非对称复位晶体管
公开(公告)号：US07649231B2
公开(公告)日：2010-01-19
申请号：US10682269
申请日：2003-10-09
申请人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng
发明人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng
IPC分类号： H01L23/62
CPC分类号： H01L27/14689 , H01L27/0802 , H01L27/14609 , H01L27/1463
摘要： A new method to form CMOS image sensors in the manufacture of an integrated circuit device is achieved. The method comprises providing a semiconductor substrate. Sensor diodes are formed in the semiconductor substrate each comprising a first terminal and a second terminal. Gates are formed for transistors in the CMOS image sensors. The gates comprise a conductor layer overlying the semiconductor substrate with an insulating layer therebetween. The transistors include reset transistors. Ions are implanted into the semiconductor substrate to form source/drain regions for the transistors. The source regions of the reset transistors are formed in the first terminals of the sensor diodes. Ions are implanted into the reset transistor sources to form double diffused sources. The implanting is blocked from other source/drain regions.
摘要翻译：实现了在制造集成电路器件中形成CMOS图像传感器的新方法。该方法包括提供半导体衬底。传感器二极管形成在每个包括第一端子和第二端子的半导体衬底中。为CMOS图像传感器中的晶体管形成栅极。栅极包括覆盖半导体衬底的导体层，其间具有绝缘层。晶体管包括复位晶体管。将离子注入到半导体衬底中以形成用于晶体管的源极/漏极区域。复位晶体管的源极区域形成在传感器二极管的第一端子中。离子被植入到复位晶体管源中以形成双扩散源。植入物从其它源极/漏极区域被阻挡。

33. 发明申请

US20090189233A1 CMOS IMAGE SENSOR AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US20090189233A1
公开(公告)日：2009-07-30
申请号：US12020149
申请日：2008-01-25
申请人： Jen-Cheng Liu , Dun-Nian Yaung , Shou-Gwo Wuu , Chi-Hsin Lo , Feng-Jia Shiu , Chung-Yi Yu
发明人： Jen-Cheng Liu , Dun-Nian Yaung , Shou-Gwo Wuu , Chi-Hsin Lo , Feng-Jia Shiu , Chung-Yi Yu
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14625 , H01L27/14627 , H01L27/14636 , H01L27/14685
摘要： An optical image sensor is fabricated by forming a pixel array and a peripheral region surrounding the pixel array on a semiconductor substrate, the peripheral region containing peripheral circuitry. An inter-level-dielectric layer is formed over the substrate and a plurality of interconnect wiring layers are formed over the inter-level-dielectric layer. Each interconnect wiring layer includes interconnecting metal features and a layer of inter-level-dielectric material covering the interconnecting metal features. The plurality of interconnect wiring layers are provided in a manner that there are N levels of wiring layers in the peripheral region and 1 to (N−1) levels of wiring layers over the pixel array. An etch-stop layer is formed over the top-most level interconnecting metal features in the peripheral region.
摘要翻译：通过在半导体衬底上形成围绕像素阵列的像素阵列和外围区域来制造光学图像传感器，该外围区域包含外围电路。层间电介质层形成在衬底之上，并且在层间电介质层之上形成多个互连布线层。每个互连布线层包括互连金属特征和覆盖互连金属特征的层间电介质材料层。多个互连布线层的设置方式是在像素阵列的周边区域中有N层布线层和布线层的1层（N-1）层。在外围区域中最顶层的互连金属特征上形成蚀刻停止层。

34. 发明授权

US07553689B2 Semiconductor device with micro-lens and method of making the same 有权
标题翻译：具有微透镜的半导体器件及其制造方法
公开(公告)号：US07553689B2
公开(公告)日：2009-06-30
申请号：US11181189
申请日：2005-07-13
申请人： Jeng-Shyan Lin , Chien-Hsien Tseng , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung , Hung-Jen Hsu
发明人： Jeng-Shyan Lin , Chien-Hsien Tseng , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung , Hung-Jen Hsu
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14623 , H01L27/14627 , H01L27/14632
摘要： A semiconductor device including a semiconductor substrate having a photosensor formed therein; a first layer overlying the substrate, the first layer includes a portion having a generally concave shaped surface being the negative shaped of a micro-lens to be formed there over; a second layer overlying the first layer, the second layer including a generally convex shaped portion vertically aligned with and mating with the generally concave shaped surface, the generally convex shaped portion being constructed and arranged to define a micro-lens positioned to cause parallel light passing through the micro-lens to converge on and strike the photosensor.
摘要翻译：一种半导体器件，包括其中形成有光电传感器的半导体衬底; 覆盖衬底的第一层，第一层包括具有大致凹形形状的表面的部分，其为在其上形成的微透镜的负形状; 覆盖第一层的第二层，第二层包括垂直对准并与大致凹形的表面配合的大致凸形的部分，大体上凸形的部分被构造和布置以限定微透镜，定位成使得平行光通过通过微透镜收敛并撞击光电传感器。

35. 发明授权

US07507596B2 Method of fabricating a high quantum efficiency photodiode 有权
标题翻译：制造高量子效率光电二极管的方法
公开(公告)号：US07507596B2
公开(公告)日：2009-03-24
申请号：US11360750
申请日：2006-02-23
申请人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chen , Chien-Hsien Tseng , Jeng-Shyan Lin
发明人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chen , Chien-Hsien Tseng , Jeng-Shyan Lin
IPC分类号： H01L21/00
CPC分类号： H01L31/103 , H01L27/1463 , H01L27/14632 , H01L27/14643 , H01L31/02161
摘要： The present invention is CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.
摘要翻译：本发明是CMOS图像传感器及其制造方法。本发明提供了一种提高无边界接触CMOS图像传感器的量子效率的有效结构。图像传感器包括覆盖光电二极管区域的无接触接触和介电结构的N阱/ P基板型光电二极管。电介质结构位于光电二极管和层间电介质（ILD）之间，用作无边界接触的缓冲层。制造高性能光电二极管的方法包括在浅沟槽的n阱区域中形成光电二极管，并且在ILD氧化物和具有高于ILD氧化物的折射率的光电二极管之间嵌入电介质材料。

36. 发明申请

US20080265242A1 CMOS IMAGE SENSOR WITH ENHANCED PHOTOSENSITIVITY 有权
标题翻译：具有增强光敏性的CMOS图像传感器
公开(公告)号：US20080265242A1
公开(公告)日：2008-10-30
申请号：US11739650
申请日：2007-04-24
申请人： Shine Chung , Shou-Gwo Wuu
发明人： Shine Chung , Shou-Gwo Wuu
IPC分类号： H01L29/66
CPC分类号： H01L27/14632 , H01L27/14621 , H01L27/14627 , H01L27/14645 , H01L27/14663 , H01L27/14696
摘要： A photosensitive device is disclosed which comprises a semiconductor substrate, at least one reverse biased device, such as a P-N junction diode formed in the semiconductor substrate, and at least one photosensitive layer disposed above the semiconductor substrate and substantially covering the reverse biased device, the photosensitive layer releasing electrons and holes when struck by photons, wherein the photon generated electrons and holes in the photosensitive layer reach the reverse biased device and create a combination current therein when a light shines thereon.
摘要翻译：公开了一种光敏器件，其包括半导体衬底，形成在半导体衬底中的至少一个反向偏压器件，例如PN结二极管，以及设置在半导体衬底之上并基本上覆盖反向偏置器件的至少一个感光层，光敏层在被光子撞击时释放电子和空穴，其中光子产生的电子和感光层中的空穴到达反向偏置器件，并且当光照射在其上时产生组合电流。

37. 发明授权

US07432576B2 Grid metal design for large density CMOS image sensor 有权
标题翻译：网格金属设计，用于大尺寸CMOS图像传感器
公开(公告)号：US07432576B2
公开(公告)日：2008-10-07
申请号：US10945342
申请日：2004-09-20
申请人： Dun-Nian Yaung , Shou-Gwo Wuu , Chien-Hsien Tseng
发明人： Dun-Nian Yaung , Shou-Gwo Wuu , Chien-Hsien Tseng
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/14643
摘要： A new grid metal design for image sensors is disclosed which is comprised of a semiconductor image sensor chip having a pixel region covering most of the chip and a logic circuit region on the chip periphery. The pixel region contains, an array of image pixels where for each image pixel the majority of its area is occupied by a light sensing element and the other image pixel circuit elements are arranged in the periphery of the image pixel without overlapping the image-sensing element. A number of metal levels are of the first type, at which functional metal patterns exist both for the chip peripheral logic circuits and for the pixel circuit elements. A number of metal levels are of the second type, at which functional metal patterns exist only for the chip peripheral logic circuits and dummy metal patterns cover the pixel region except for the light sensing elements. A first dielectric layer is disposed under the first metal layer, an interlevel dielectric layer between metal levels of either type and a passivation layer over the last metal level.
摘要翻译：公开了一种用于图像传感器的新的栅格金属设计，其包括具有覆盖芯片的大部分的像素区域和芯片周边上的逻辑电路区域的半导体图像传感器芯片。像素区域包含图像像素阵列，其中对于每个图像像素，其大部分区域被光感测元件占据，并且其它图像像素电路元件布置在图像像素的周围，而不与图像感测元件重叠。多个金属级别是第一类型，其中功能金属图案存在于芯片外围逻辑电路和像素电路元件。许多金属水平是第二类型，其中功能金属图案仅存在于芯片外围逻辑电路，并且虚拟金属图案覆盖除了感光元件之外的像素区域。第一介电层设置在第一金属层的下方，在最后一个金属层上的任一种金属层与钝化层之间的层间电介质层。

38. 发明申请

US20080105944A1 Crosstalk Improvement Through P on N Structure For Image Sensor 有权
标题翻译：通过P对图像传感器的N结构进行串扰改进
公开(公告)号：US20080105944A1
公开(公告)日：2008-05-08
申请号：US11682350
申请日：2007-03-06
申请人： Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
发明人： Chung-Wei Chang , Han-Chi Liu , Chun-Yao Ko , Shou-Gwo Wuu
IPC分类号： H01L31/06 , H01L31/068
CPC分类号： H01L27/1463 , H01L21/761 , H01L27/14603 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14643 , H01L27/14689 , H01L31/035272
摘要： The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant; a semiconductor layer having a second type of dopant different from the first type of dopant and disposed on the semiconductor substrate; and an image sensor formed in the semiconductor layer.
摘要翻译：本公开提供了一种图像传感器半导体器件。半导体器件包括具有第一类掺杂剂的半导体衬底; 半导体层，其具有不同于所述第一类型掺杂剂的第二类型的掺杂剂并且设置在所述半导体衬底上; 以及形成在半导体层中的图像传感器。

39. 发明授权

US07338830B2 Hollow dielectric for image sensor 有权
标题翻译：空心电介质用于图像传感器
公开(公告)号：US07338830B2
公开(公告)日：2008-03-04
申请号：US11271116
申请日：2005-11-10
申请人： Tzu-Hsuan Hsu , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung
发明人： Tzu-Hsuan Hsu , Shou-Gwo Wuu , Ho-Ching Chien , Dun-Nian Yaung
IPC分类号： H01L21/00
CPC分类号： H01L27/14632 , H01L27/1462
摘要： A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.
摘要翻译：在设置在形成于半导体衬底中的传感器上的至少一个第一绝缘层中形成多个孔。第二绝缘层设置在至少一个第一绝缘层和至少一个第一绝缘层中的多个孔之上。所述孔在所述传感器上的所述至少一个第一绝缘层中形成中空区域，允许更多的光或能量穿过所述至少一个第一绝缘层到所述传感器，并且增加所述传感器的灵敏度。

40. 发明授权

US07332368B2 Light guide for image sensor 有权
标题翻译：图像传感器光导
公开(公告)号：US07332368B2
公开(公告)日：2008-02-19
申请号：US11285671
申请日：2005-11-22
申请人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng
发明人： Dun-Nian Yaung , Shou-Gwo Wuu , Ho-Ching Chien , Chien-Hsien Tseng
IPC分类号： H01L21/00
CPC分类号： H01L27/14625 , H01L27/14685
摘要： A new method to form an image sensor device is achieved. The method comprises forming an image sensing array in a substrate comprising a plurality of light detecting diodes with spaces between the diodes. A first dielectric layer is formed overlying the diodes but not the spaces. The first dielectric layer has a first refractive index. A second dielectric layer is formed overlying the spaces but not the diodes. The second dielectric layer has a second refractive index that is larger than the first refractive index. A new image sensor device is disclosed.
摘要翻译：实现了形成图像传感器装置的新方法。该方法包括在包括在二极管之间具有空间的多个光检测二极管的衬底中形成图像感测阵列。第一介电层形成在二极管上，但不形成空间。第一电介质层具有第一折射率。第二电介质层形成在空间上而不是二极管上。第二电介质层具有大于第一折射率的第二折射率。公开了一种新的图像传感器装置。

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