专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US08247837B2 Light-emitting diode with high lighting efficiency 有权
标题翻译：发光二极管具有高照明效率
公开(公告)号：US08247837B2
公开(公告)日：2012-08-21
申请号：US12421872
申请日：2009-04-10
申请人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
发明人： Su-Hui Lin , Sheng-Hsien Hsu , Jing-Jie Dai , Tzong Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/42
摘要： The invention discloses a light-emitting diode. In an embodiment, the light-emitting diode includes a substrate, a first doping type semiconductor layer, a second doping type semiconductor layer, a light-emitting layer and plural laminated structures. The first doping type semiconductor layer, the light-emitting layer and the second doping type semiconductor layer are formed on the substrate in sequence. The plural laminated structures are formed on the top surface of the second doping type semiconductor layer such that the top surface is partially exposed. Each laminated structure consists of plural transparent insulating layers which have their respective refractive indices. Additionally, each of the laminated structures is formed in a way of upwardly stacking the transparent insulating layers in sequence with the refractive indices of the transparent insulating layers decreasing gradually, so as to enhance the light-extraction efficiency and the lighting efficiency of the light-emitting diode.
摘要翻译：本发明公开了一种发光二极管。在一个实施例中，发光二极管包括基板，第一掺杂型半导体层，第二掺杂型半导体层，发光层和多个叠层结构。依次在基板上形成第一掺杂型半导体层，发光层和第二掺杂型半导体层。多个叠层结构形成在第二掺杂型半导体层的顶表面上，使得顶表面部分露出。每个层压结构由具有各自折射率的多个透明绝缘层组成。另外，各层叠结构体以与透明绝缘层的折射率逐渐降低的顺序向上堆积透明绝缘层的方式形成，从而提高发光体的光提取效率和照明效率，发光二极管。

32. 发明授权

US08124989B2 Light optoelectronic device and forming method thereof 有权
标题翻译：光电子器件及其形成方法
公开(公告)号：US08124989B2
公开(公告)日：2012-02-28
申请号：US12061623
申请日：2008-04-02
申请人： Tzong-Liang Tsai
发明人： Tzong-Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L33/04 , H01L33/10 , H01L33/105 , H01L33/32
摘要： The present invention provides an optoelectronic device with an epi-stacked structure, which includes a substrate, a buffer layer that is formed on the substrate, in which the buffer layer includes a first nitrogen-containing compound layer, an II/V group compound layer is provided on the first nitrogen-containing compound layer, a second nitrogen-containing compound layer is provided on the II/V group compound layer, and a third nitrogen-containing compound layer is provided on the second nitrogen-containing compound layer, an epi-stacked structure with a multi-layer structure is formed on the buffer layer, which includes a first semiconductor conductive layer is formed on the buffer layer, an active layer is formed on the first semiconductor conductive layer, a multi-layer structure is formed between the first semiconductor conductive layer and the active layer, and a second semiconductor conductive layer is formed on the active layer.
摘要翻译：本发明提供具有外延叠层结构的光电器件，其包括衬底，形成在衬底上的缓冲层，其中缓冲层包括第一含氮化合物层，II / V族化合物层设置在第一含氮化合物层上，在II / V族化合物层上设置第二含氮化合物层，在第二含氮化合物层上设置第三含氮化合物层，在缓冲层上形成具有多层结构的叠层结构，在缓冲层上形成有第一半导体导电层，在第一半导体导电层上形成有源层，在第一半导体导电层之间形成多层结构，第一半导体导电层和有源层，以及在有源层上形成第二半导体导电层。

33. 发明授权

US08013322B2 Light-emitting diode device with a double-layer contact structure and a fabrication method thereof 有权
标题翻译：具有双层接触结构的发光二极管器件及其制造方法
公开(公告)号：US08013322B2
公开(公告)日：2011-09-06
申请号：US12274239
申请日：2008-11-19
申请人： Ming-Huang Hong , Tzong-Liang Tsai
发明人： Ming-Huang Hong , Tzong-Liang Tsai
IPC分类号： H01L29/06
CPC分类号： H01L33/42 , H01L33/14 , H01L33/387
摘要： The present invention provides a light-emitting diode (LED) device and a fabrication method thereof. The LED device has a double-layered contact layer structure with a surface of one contact layer being patterned to increase ohmic contact area of the double-layered contact layer structure to lower an operation voltage of the LED device, and hence reducing power consumption.
摘要翻译：本发明提供一种发光二极管（LED）装置及其制造方法。 LED器件具有双层接触层结构，其中一个接触层的表面被图案化以增加双层接触层结构的欧姆接触面积，以降低LED器件的操作电压，从而降低功耗。

34. 发明申请

US20100193810A1 Optical Device and the Forming Method Thereof 有权
标题翻译：光学器件及其形成方法
公开(公告)号：US20100193810A1
公开(公告)日：2010-08-05
申请号：US12408795
申请日：2009-03-23
申请人： Tzong-Liang TSAI , Lin-Chieh Kao , Shu-Ying Yang
发明人： Tzong-Liang TSAI , Lin-Chieh Kao , Shu-Ying Yang
IPC分类号： H01L33/00
CPC分类号： H01L33/10 , H01L33/46
摘要： An optical device is provided which includes a first electrode; a substrate disposed on the first electrode; a plurality of multi-layer film structures disposed on the substrate, and the multi-layer film structure consisted of at least two insulated layer with different reflection index formed alternately; a first semiconductor conductive layer disposed on the substrate to cover the multi-layer film structure; an active layer disposed on the first semiconductor conductive layer; a second semiconductor conductive layer disposed on the active layer; a transparent conductive layer disposed on the second semiconductor conductive layer; and a second electrode disposed on the transparent conductive layer, thereby, the multi-layer structure can increase the light reflective effect or anti-reflective effect within the optical device to improve the light emitting effective.
摘要翻译：提供一种光学装置，其包括第一电极; 设置在所述第一电极上的基板; 设置在基板上的多个多层膜结构，并且所述多层膜结构由交替形成的具有不同反射指数的至少两个绝缘层组成; 设置在所述基板上以覆盖所述多层膜结构的第一半导体导电层; 设置在所述第一半导体导电层上的有源层; 设置在所述有源层上的第二半导体导电层; 设置在所述第二半导体导电层上的透明导电层; 以及设置在透明导电层上的第二电极，由此，多层结构可以增加光学器件内的光反射效果或抗反射效果，以提高发光效率。

35. 发明授权

US07768027B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07768027B2
公开(公告)日：2010-08-03
申请号：US12184933
申请日：2008-08-01
申请人： Tzong-Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
发明人： Tzong-Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
IPC分类号： H01L29/26
CPC分类号： H01L33/44 , H01L2933/0091
摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.
摘要翻译：本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块结构。第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。第一电极形成在第一区域上。在第二区域上形成发光层和第二导电型半导体材料层。凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。每个凸块结构由ITO，SiO2，SiN，ZnO，聚酰亚胺，BCB，SOG，InO或SnO制成。

36. 发明申请

US20080191190A1 Epi-structure with uneven multi-quantum well and the method thereof 有权
标题翻译：具有不均匀多量子阱的Epi结构及其方法
公开(公告)号：US20080191190A1
公开(公告)日：2008-08-14
申请号：US11798750
申请日：2007-05-16
申请人： Tzong-Liang Tsai , Chih-Ching Cheng
发明人： Tzong-Liang Tsai , Chih-Ching Cheng
IPC分类号： H01L33/00
CPC分类号： H01L33/24 , B82Y20/00 , H01L33/06 , H01S5/3407 , H01S5/3408 , H01S5/34333 , H01S2304/04
摘要： An Epi-Structure of light-emitting device, comprising: a first semiconductor conductive layer forming on a substrate; an active layer forming on a first semiconductor conductive layer with Multi-Quantum Well (MQW); and a second semiconductor conductive layer forming on the active layer; wherein a plurality of particles formed by at least one hetero-material are scattered between the first semiconductor conductive layer and the active layer in order to form an uneven Multi-Quantum Well.
摘要翻译：发光装置的Epi结构，包括：在基板上形成的第一半导体导电层; 在具有多量子阱（MQW）的第一半导体导电层上形成的有源层; 以及形成在所述有源层上的第二半导体导电层; 其中由至少一种异质材料形成的多个颗粒在第一半导体导电层和活性层之间被散射，以形成不均匀的多量子阱。

37. 发明申请

US20080054289A1 LIGHT EMITTING DEVICE AND METHODS FOR FORMING THE SAME 有权
标题翻译：发光装置及其形成方法
公开(公告)号：US20080054289A1
公开(公告)日：2008-03-06
申请号：US11848458
申请日：2007-08-31
申请人： Tzong-Liang Tsai , Yu-Chu Li , Chiung-Chi Tsai
发明人： Tzong-Liang Tsai , Yu-Chu Li , Chiung-Chi Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/14 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a light emitting device, which includes a transparent substrate, an epitaxial stack structure having a first portion and a second portion on the transparent substrate, a II/V group compound contact layer on the first portion of the epitaxial stack structure, a nitride-crystallized layer on the II/V group compound contact layer, a transparent conductive layer covering the nitride-crystallized layer, a first electrode on a portion of the transparent conductive layer, and a second electrode on the second portion of the epitaxial stack structure and structurally separated from the structure on the first portion of the epitaxial stack structure. The nitride-crystallized layer may help increase the external quantum efficiency of the light emitting device, thereby the light emitting efficiency of the light emitting device may also be improved.
摘要翻译：本发明提供了一种发光器件，其包括透明衬底，在透明衬底上具有第一部分和第二部分的外延堆叠结构，在外延堆叠结构的第一部分上的II / V族化合物接触层， II / V族化合物接触层上的氮化物结晶层，覆盖氮化物结晶层的透明导电层，透明导电层的一部分上的第一电极和外延层的第二部分上的第二电极结构和结构上与外延堆叠结构的第一部分上的结构分离。氮化物结晶层可以有助于增加发光器件的外部量子效率，从而也可以提高发光器件的发光效率。

38. 发明申请

US20080023835A1 Ohmic contact film in semiconductor device 审中-公开
标题翻译：欧姆接触膜在半导体器件中
公开(公告)号：US20080023835A1
公开(公告)日：2008-01-31
申请号：US11797851
申请日：2007-05-08
申请人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
发明人： Chiung-Chi Tsai , Tzong-Liang Tsai , Yu-Chu Li
IPC分类号： H01L23/52
CPC分类号： H01L33/26 , H01L33/40
摘要： The invention provides an ohmic contact film formed between a doped semiconductor material layer and a conductive material layer of a semiconductor device. The composition of the ohmic contact film according to a preferred embodiment of the invention is represented by the general formula MxNy, where M represents the II group chemical element, N represents the V group chemical element, 1≦x≦3, 1≦y≦3, and x and y are molar numbers.
摘要翻译：本发明提供了形成在半导体器件的掺杂半导体材料层和导电材料层之间的欧姆接触膜。根据本发明优选实施方案的欧姆接触膜的组成由通式M X N Y Y表示，其中M表示II族化学元素，N 表示V族化学元素，1 <= x <= 3,1 <= y <= 3，x和y是摩尔数。

39. 发明申请

US20060163592A1 Light emitting diode and fabricating method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20060163592A1
公开(公告)日：2006-07-27
申请号：US11109345
申请日：2005-04-19
申请人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
发明人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
IPC分类号： H01L29/22
CPC分类号： H01L33/0079 , H01L33/44
摘要： A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.
摘要翻译：公开了一种发光二极管及其制造方法。在衬底上形成发光二极管外延结构，然后蚀刻发光二极管外延结构以形成凹陷。然后用透明电介质材料填充凹部。粘合层用于粘附导电衬底和发光二极管外延结构。接下来，去除衬底。

40. 发明申请

US20050156183A1 LIGHT-EMITTING DEVICE HAVING REFLECTING LAYER FORMED UNDER ELECTRODE 审中-公开
标题翻译：具有电极形成的反射层的发光器件
公开(公告)号：US20050156183A1
公开(公告)日：2005-07-21
申请号：US10906045
申请日：2005-02-01
申请人： Tzong-Liang Tsai , Chih-Sung Chang , Wei-En Chien , Tzer-Perng Chen
发明人： Tzong-Liang Tsai , Chih-Sung Chang , Wei-En Chien , Tzer-Perng Chen
IPC分类号： H01L29/06 , H01L33/04 , H01L33/10 , H01L33/40
CPC分类号： H01L33/405 , H01L33/04 , H01L33/105
摘要： The present invention discloses a light-emitting device that has a substrate, an n-type electrode, an active layer, a p-type semiconductor layer, a reflecting layer, and a p-type electrode. The n-type electrode is located on the bottom surface of the substrate and the active layer is located on a top surface of the substrate. The p-type semiconductor layer covers the active layer. The reflecting layer is located on the p-type semiconductor layer and covered by the p-type electrode and has an area not less than the area of the p-type electrode and not more than a half of the area of the p-type semiconductor layer. The reflecting layer is a conductive layer with high reflectivity, and is formed under the p-type electrode to reflect light from the active layer, avoiding light of the light-emitting device being absorbed by the metal electrode.
摘要翻译：本发明公开了一种具有基板，n型电极，有源层，p型半导体层，反射层和p型电极的发光装置。 n型电极位于衬底的底表面上，有源层位于衬底的顶表面上。 p型半导体层覆盖有源层。反射层位于p型半导体层上，由p型电极覆盖，面积不小于p型电极的面积，不超过p型半导体的面积的一半层。反射层是具有高反射率的导电层，并且形成在p型电极下方以反射来自有源层的光，避免了发光器件被金属电极吸收的光。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式