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41. 发明申请

US20070034933A1 Flash memory device utilizing nanocrystals embedded in polymer 有权
标题翻译：闪存器件利用嵌入聚合物的纳米晶体
公开(公告)号：US20070034933A1
公开(公告)日：2007-02-15
申请号：US11540991
申请日：2006-09-28
申请人： Tae-Whan Kim , Young-Ho Kim , Chong-Seung Yoon , Jae-Ho Kim , Jae-Hun Jung , Sung-Keun Lim , Mun-Seop Song
发明人： Tae-Whan Kim , Young-Ho Kim , Chong-Seung Yoon , Jae-Ho Kim , Jae-Hun Jung , Sung-Keun Lim , Mun-Seop Song
IPC分类号： H01L29/76
CPC分类号： H01L29/7881 , B82Y10/00 , H01L21/28273 , H01L29/42332 , Y10S977/773 , Y10S977/777 , Y10S977/779 , Y10S977/943
摘要： A flash memory device with a nanoscale floating gate and a method of manufacturing thereof are disclosed. At least one embodiment of the present invention provides a much simpler and easier method of manufacturing nanocrystals (or nanocrystallines) for the flash memory device than the conventional method. Since the nanocrystals are homogeneously dispersed as a polymer layer without agglomeration, size and density of the nanoparticles may be controlled. Additionally, one embodiment of the present invention provides memory devices with nanoscale floating gates, and related methods of manufacture, of high efficiency and cost effectiveness by employing electrically and chemically more stable nanosacle floating gates compared to conventional ones.
摘要翻译：公开了一种具有纳米级浮动栅极的闪存器件及其制造方法。本发明的至少一个实施例提供了制造用于闪速存储器件的纳米晶体（或纳米晶体）的方法比常规方法简单和容易的方法。由于纳米晶体作为聚合物层均匀分散而没有附聚，因此可以控制纳米颗粒的尺寸和密度。此外，本发明的一个实施例通过采用电化学和化学更稳定的纳米级浮动栅极提供具有纳米级浮动栅极的存储器件以及相关的制造方法，其具有高效率和成本效益。

42. 发明授权

US06475886B2 Fabrication method of nanocrystals using a focused-ion beam 失效
标题翻译：使用聚焦离子束的纳米晶体的制造方法
公开(公告)号：US06475886B2
公开(公告)日：2002-11-05
申请号：US10025696
申请日：2001-12-26
申请人： Eun Kyu Kim , Young Ju Park , Tae Whan Kim , Seung Oun Kang , Dong Chul Choo , Jae Hwan Shim
发明人： Eun Kyu Kim , Young Ju Park , Tae Whan Kim , Seung Oun Kang , Dong Chul Choo , Jae Hwan Shim
IPC分类号： H01L21425
CPC分类号： C23C14/5833 , B82Y10/00 , B82Y30/00 , C23C14/5873 , C30B13/24 , C30B29/605 , H01L21/265 , Y10S977/949
摘要： Disclosed is a method for forming a nano-crystal. In the above method, there is prepared a substrate having a metal film or a semiconductor film formed thereon. A focused-ion beam is irradiated onto a plurality of positions on a surface of the metal film or the semiconductor film, whereby the metal film or the semiconductor film is removed at a focal portion of the focused-ion beam but an atomic bond in the metal film or the semiconductor film is broken at an overlapping region of the focused-ion beams due to an radiation effect of the focused-ion beam to form the nano-crystal. The method allows a few nm or less-sized nano-crystals to be formed with ease and simplicity using the focused-ion beam. As a result, the formed nano-crystals come to have a binding energy capable of restraining thermal fluctuation phenomenon at room temperature and thereby it becomes possible to fabricate a tunneling transistor capable of being operated at room temperature. Further, the invention contributes largely to a development of next generation ultra high density memory device with a memory capacitance of tera byte level or more.
摘要翻译：公开了一种形成纳米晶体的方法。在上述方法中，制备了在其上形成有金属膜或半导体膜的基板。聚焦离子束照射在金属膜或半导体膜的表面上的多个位置上，由此在聚焦离子束的焦点部分除去金属膜或半导体膜，但是在金属膜或半导体膜由于聚焦离子束的辐射效应而在聚焦离子束的重叠区域断裂，形成纳米晶体。该方法允许使用聚焦离子束容易且简单地形成几nm或更小尺寸的纳米晶体。结果，形成的纳米晶体具有能够在室温下抑制热波动现象的结合能，从而可以制造能够在室温下操作的隧道晶体管。此外，本发明在很大程度上有助于开发具有tera字节级或更高级别的存储电容的下一代超高密度存储器件。

43. 发明授权

US08641915B2 Electronic device utilizing graphene electrodes and organic/inorganic hybrid composites and method of manufacturing the electronic device 有权
标题翻译：利用石墨烯电极和有机/无机混合复合材料的电子器件及其制造方法
公开(公告)号：US08641915B2
公开(公告)日：2014-02-04
申请号：US12860553
申请日：2010-08-20
申请人： Tae-Whan Kim , Won-il Park , Dong-Ick Son , Hee-Yeon Yang , Jung-Min Lee , Jae-Hun Jung
发明人： Tae-Whan Kim , Won-il Park , Dong-Ick Son , Hee-Yeon Yang , Jung-Min Lee , Jae-Hun Jung
IPC分类号： B44C1/22
CPC分类号： H01L51/441 , H01L51/0037 , H01L51/4233 , H01L51/428 , H01L2251/308 , Y02E10/549 , Y02P70/521 , Y10T156/10
摘要： Example embodiments are directed to an electronic device and a method for manufacturing the same. The electronic device includes a polymer thin film and an electrode. The polymer thin film includes nanoparticles. The electrode is formed by attaching a graphene thin film of a sheet shape formed through graphene deposition using a vapor carbon supply source to the polymer thin film. In the method, a graphene thin film of a sheet shape is formed through graphene deposition using a vapor carbon supply source. A polymer solution with distributed nanoparticles is prepared. The polymer solution with distributed nanoparticles is spin-coated on a substrate. A polymer thin film comprising the nanoparticles is formed by drying the spin-coated polymer solution. An electrode is formed by attaching the graphene thin film onto the polymer thin film.
摘要翻译：示例性实施例涉及电子设备及其制造方法。电子设备包括聚合物薄膜和电极。聚合物薄膜包括纳米颗粒。通过使用蒸气碳供应源将通过石墨烯沉积形成的片状石墨烯薄膜附着到聚合物薄膜上而形成电极。在该方法中，使用蒸气碳供应源通过石墨烯沉积形成片状石墨烯薄膜。制备了具有分散纳米颗粒的聚合物溶液。将具有分散纳米颗粒的聚合物溶液旋涂在基材上。通过干燥旋涂聚合物溶液形成包含纳米颗粒的聚合物薄膜。通过将石墨烯薄膜附着在聚合物薄膜上形成电极。

44. 发明申请

US20130327385A1 SOLAR CELL HAVING A DOUBLE-SIDED STRUCTURE, AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：具有双面结构的太阳能电池及其制造方法
公开(公告)号：US20130327385A1
公开(公告)日：2013-12-12
申请号：US14001311
申请日：2012-02-17
申请人： Tae Whan Kim , Qifeng Han , Jae Hun Jung
发明人： Tae Whan Kim , Qifeng Han , Jae Hun Jung
IPC分类号： H01L31/0725
CPC分类号： H01L31/0725 , H01L31/035218 , H01L31/035227 , H01L31/0684 , H01L31/0749 , H01L31/18 , H01L51/4233 , Y02E10/541 , Y02P70/521
摘要： The present invention relates to a solar cell having nanostructures on both surfaces of a transparent substrate, and to a method for manufacturing same. The nano-structures, which face each other with respect to the substrate and which transport electrons, are formed using zinc-oxide nanowires. Also, a hole-transport layer using CIS nanoparticles is formed in order to absorb light having a short wavelength and to transport generated holes. A hole-transport layer including CIGS nanoparticles for absorbing light having a relatively long wavelength is formed on the side facing the hole-transport layer including the CIS nanoparticles.
摘要翻译：本发明涉及一种在透明基板的两个表面上具有纳米结构的太阳能电池及其制造方法。使用氧化锌纳米线形成相对于衬底彼此相对并且传输电子的纳米结构。此外，形成使用CIS纳米颗粒的空穴传输层，以便吸收具有短波长的光并传输产生的空穴。在包括CIS纳米颗粒的空穴传输层的一侧形成包括用于吸收具有较长波长的光的CIGS纳米颗粒的空穴传输层。

45. 发明授权

US08598568B2 Photodetector using a graphene thin film and nanoparticles, and method for producing the same 有权
标题翻译：使用石墨烯薄膜和纳米颗粒的光电检测器及其制造方法
公开(公告)号：US08598568B2
公开(公告)日：2013-12-03
申请号：US13392176
申请日：2010-08-24
申请人： Tae-Whan Kim , Jae-Hun Jung , Dong-Ick Son , Jung-Min Lee , Hee-Yeon Yang , Won-Il Park
发明人： Tae-Whan Kim , Jae-Hun Jung , Dong-Ick Son , Jung-Min Lee , Hee-Yeon Yang , Won-Il Park
IPC分类号： H01L31/0256
CPC分类号： H01L31/035209 , H01L31/112 , H01L51/428
摘要： Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption.
摘要翻译：提供了使用石墨烯薄膜和纳米颗粒的光电检测器（PD）及其制造方法。 PD包括具有通过使用气相碳（C）源的石墨烯沉积方法和形成在石墨烯薄膜上的纳米颗粒层形成的片状的石墨烯薄膜，并且被图案化以限定石墨烯薄膜的电极区域膜，纳米颗粒层由不含基质材料的纳米颗粒形成。 PD具有使用石墨烯薄膜作为通道和电极的平面结构，并且使用纳米颗粒作为光伏材料（由于由紫外（UV）光引起的光电子运动能力而能够形成电子 - 空穴对）。由于PD具有非常简单的结构，所以可以以低成本，高生产率制造PD。此外，PD包括石墨烯薄膜以降低功耗。

46. 发明申请

US20130234973A1 TOUCH SCREEN PANEL AND IMAGE DISPLAY DEVICE INCLUDING SAME 审中-公开
标题翻译：触摸屏面板和图像显示装置，包括它们
公开(公告)号：US20130234973A1
公开(公告)日：2013-09-12
申请号：US13989299
申请日：2011-11-22
申请人： Tae Whan Kim , Gyu Wan Han , Su Hyeong Park
发明人： Tae Whan Kim , Gyu Wan Han , Su Hyeong Park
IPC分类号： G06F3/041
CPC分类号： G06F3/041 , G06F3/044 , G06F2203/04111
摘要： The present invention relates to a touch screen panel and to an image display device including same. The touch screen panel comprises: a first sensing wire pattern layer in which a plurality of first sensing wire pattern lines are formed in a first diagonal direction; a second sensing wire pattern layer in which a plurality of second sensing wire pattern lines are formed in a second diagonal direction so as to form a preset angle with the first sensing wires; and an insulation layer for providing insulation between the 1st sensing wire pattern layer and the 2nd sensing wire pattern layer. Since capacitive touch sensing wire pattern lines are disposed diagonally with a certain angle therebetween, the number of wires arranged on the major axis of the bezel of the touch screen panel can be reduced when compared to the resolution of touch screen panels of prior art in which the arrangement is perpendicular.
摘要翻译：触摸屏面板技术领域本发明涉及触摸屏面板及其构成的图像显示装置。触摸屏面板包括：第一感测线图案层，其中多个第一感测线图案线在第一对角线方向上形成; 第二感测线图案层，其中多个第二感测线图案线形成在第二对角线方向上以与第一感测线形成预设角度; 以及用于在第一感测线图案层和第二感测线图案层之间提供绝缘的绝缘层。由于电容式触摸感测线图案线以对角线设置在其间具有一定的角度，所以与现有技术的触摸屏面板的分辨率相比，布置在触摸屏面板的边框的长轴上的线数可以减少，其中排列垂直。

47. 发明授权

US07863673B2 Non-volatile memory device and method of operating the same 有权
标题翻译：非易失性存储器件及其操作方法
公开(公告)号：US07863673B2
公开(公告)日：2011-01-04
申请号：US12370792
申请日：2009-02-13
申请人： Tae-Whan Kim , Kae-Dal Kwack , Sang-Su Park
发明人： Tae-Whan Kim , Kae-Dal Kwack , Sang-Su Park
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/7887 , H01L21/28273 , H01L21/28282 , H01L29/42332 , H01L29/66825 , H01L29/66833 , H01L29/7923
摘要： A non-volatile memory device includes a semiconductor substrate, first and second control gates, and first and second charge storage patterns. The semiconductor substrate includes a protruding active pin having a source region, a drain region and a channel region located between the source and drain regions. The first control gate is located on a first sidewall of the channel region, and the second control gate is located on a second sidewall of the channel region. The second second control gate is separated from the first control gate. The first charge storage pattern is located between the first sidewall and the first control gate, and the second charge storage pattern is located between the second sidewall and the second control gate.
摘要翻译：非易失性存储器件包括半导体衬底，第一和第二控制栅极以及第一和第二电荷存储模式。半导体衬底包括具有源极区，漏极区和位于源极和漏极区之间的沟道区的突出的有源管脚。第一控制栅极位于沟道区的第一侧壁上，第二控制栅位于沟道区的第二侧壁上。第二第二控制栅极与第一控制栅极分离。第一电荷存储图案位于第一侧壁和第一控制栅极之间，第二电荷存储图案位于第二侧壁和第二控制栅极之间。

48. 发明授权

US07706159B2 Charge pump, DC-DC converter, and method thereof 有权
标题翻译：电荷泵，DC-DC转换器及其方法
公开(公告)号：US07706159B2
公开(公告)日：2010-04-27
申请号：US11442451
申请日：2006-05-26
申请人： Tae-Whan Kim , Kae-Dal Kwack , Hong-Jae Shin
发明人： Tae-Whan Kim , Kae-Dal Kwack , Hong-Jae Shin
IPC分类号： G05F1/10
CPC分类号： H02M3/073
摘要： A charge pump for a DC-DC converter includes an input terminal receiving an input voltage, an output terminal outputting an output voltage, a plurality of charge pumping stages connected in series between the input terminal and the output terminal, and a voltage level shifter shifting voltage levels of first and second gate clock signals so that received first and second gate clock signals have a predetermined amplitude. Therefore, the charge pump can increase power efficiency by maximizing a magnitude of VGS. A DC-DC converter using the charge pump can also be applied to a portable device, for minimizing power consumption, and a method for improving power efficiency of the DC-DC converter is provided.
摘要翻译：用于DC-DC转换器的电荷泵包括接收输入电压的输入端子，输出输出电压的输出端子，串联连接在输入端子和输出端子之间的多个电荷泵浦级，以及电压电平转换器第一和第二栅极时钟信号的电压电平，使得接收的第一和第二栅极时钟信号具有预定的幅度。因此，电荷泵可以通过使VGS的幅度最大化来提高功率效率。使用电荷泵的DC-DC转换器也可以应用于便携式设备，以最小化功耗，并且提供了一种用于提高DC-DC转换器的功率效率的方法。

49. 发明授权

US07622864B2 Method of manufacturing an organic light emitting diode 有权
标题翻译：制造有机发光二极管的方法
公开(公告)号：US07622864B2
公开(公告)日：2009-11-24
申请号：US11540389
申请日：2006-09-29
申请人： Tae-Whan Kim , Dong-Chul Choo
发明人： Tae-Whan Kim , Dong-Chul Choo
IPC分类号： H01J9/00 , H01J1/62
CPC分类号： H01L51/5088
摘要： A manufacturing method of an organic light emitting diode (“OLED”) includes forming an anode on a substrate, forming an inorganic buffer layer on the anode, forming a hole transport layer on the buffer layer, forming a light emission layer on the hole transport layer, forming an electron transport layer on the light emission layer, and forming a cathode on the electron transport layer. The forming an inorganic buffer layer includes thermal evaporation and oxidation.
摘要翻译：有机发光二极管（“OLED”）的制造方法包括在基板上形成阳极，在阳极上形成无机缓冲层，在缓冲层上形成空穴传输层，在空穴传输上形成发光层在发光层上形成电子传输层，在电子传输层上形成阴极。形成无机缓冲层包括热蒸发和氧化。

50. 发明申请

US20070102750A1 Charge trap flash memory device, fabrication method thereof, and write/read operation control method thereof 有权
标题翻译：电荷阱闪存器件及其制造方法及其读/写操作控制方法
公开(公告)号：US20070102750A1
公开(公告)日：2007-05-10
申请号：US11580102
申请日：2006-10-13
申请人： Tae-whan Kim , Young-ho Kim , Jae-ho Kim , Jea-hun Jung , Chong-seung Yoon
发明人： Tae-whan Kim , Young-ho Kim , Jae-ho Kim , Jea-hun Jung , Chong-seung Yoon
IPC分类号： H01L29/76
CPC分类号： H01L29/42332 , B82Y10/00 , H01L29/7887
摘要： In one aspect, a charge trap flash memory device is provided which includes a semiconductor substrate, source and drain regions which are spaced apart in an active region of the semiconductor substrate to define a channel region therebetween, a tunneling dielectric layer located on the channel region, an organic polymer thin film located on the tunneling dielectric layer, metal or metal oxide nano-crystals embedded in the organic polymer thin film, and a gate located on the organic polymer thin film.
摘要翻译：一方面，提供了一种电荷阱闪存器件，其包括半导体衬底，在半导体衬底的有源区域中间隔开的源极和漏极区域，以在其间限定沟道区域，位于沟道区域上的隧道电介质层位于隧道电介质层上的有机聚合物薄膜，嵌入有机聚合物薄膜中的金属或金属氧化物纳米晶体，以及位于有机聚合物薄膜上的栅极。

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