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41. 发明申请

US20050082563A1 GROUP III NITRIDE SEMICONDUCTOR DEVICE AND ITS METHOD OF MANUFACTURE 有权
标题翻译：第III组氮化物半导体器件及其制造方法
公开(公告)号：US20050082563A1
公开(公告)日：2005-04-21
申请号：US10791710
申请日：2004-03-04
申请人： Tzong-Liang Tsai , Chih-Sung Chang
发明人： Tzong-Liang Tsai , Chih-Sung Chang
IPC分类号： C30B25/02 , C30B29/40 , H01L21/20 , H01L21/205 , H01L29/20 , H01L31/0304 , H01L31/18 , H01L33/00 , H01L33/12 , H01L33/16 , H01L29/24
CPC分类号： H01L33/007 , C30B25/02 , C30B29/40 , H01L21/02381 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02505 , H01L21/02513 , H01L21/0254 , H01L29/2003 , H01L31/03046 , H01L31/1852 , H01L33/12 , H01L33/16 , Y02E10/544 , Y02P70/521
摘要： Disclosed is a Group III nitride semiconductor device comprising a stress-absorbing layer having: an amorphous silicon nitride layer, an aluminum interlayer, an amorphous aluminum nitride pre-layer and a polycrystalline Group III nitride layer containing aluminum. The stress-absorbing layer is located between a silicon substrate and a Group III nitride semiconductor, for alleviating stress resulted from different lattice constants between the Group III nitride substance and the silicon substrate, thereby preventing cracking of the Group III nitride semiconductor due to the stress. Further disclosed is a method of manufacturing Group III nitride semiconductor device.
摘要翻译：公开了一种III族氮化物半导体器件，其包括具有非晶氮化硅层，铝中间层，无定形氮化铝预浸层和含有铝的多晶III族氮化物层的应力吸收层。应力吸收层位于硅衬底和III族氮化物半导体之间，用于减轻由III族氮化物物质和硅衬底之间的不同晶格常数引起的应力，从而防止由于应力引起的III族氮化物半导体的开裂。进一步公开了制造III族氮化物半导体器件的方法。

42. 发明申请

US20050072968A1 LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20050072968A1
公开(公告)日：2005-04-07
申请号：US10605539
申请日：2003-10-06
申请人： Tzong-Liang Tsai , Chih-Sung Chang , Wei-En Chien , Tzer-Perng Chen
发明人： Tzong-Liang Tsai , Chih-Sung Chang , Wei-En Chien , Tzer-Perng Chen
IPC分类号： H01L29/06 , H01L33/04 , H01L33/10 , H01L33/40
CPC分类号： H01L33/405 , H01L33/04 , H01L33/105
摘要： The present invention discloses a light-emitting device that has a substrate, an n-type electrode, an active layer, a p-type semiconductor layer, a reflective layer, and a p-type electrode. The n-type electrode is located on the bottom surface of the substrate and the active layer is located on a top surface of the substrate. The p-type semiconductor layer covers the active layer. The reflective layer is located on the p-type semiconductor layer, and the p-type electrode covers the reflective layer. The reflective layer is a conductive layer with high reflectivity, and is formed under the p-type electrode to avoid light of the light-emitting device being absorbed by the metal electrode.
摘要翻译：本发明公开了一种具有基板，n型电极，有源层，p型半导体层，反射层和p型电极的发光装置。 n型电极位于衬底的底表面上，有源层位于衬底的顶表面上。 p型半导体层覆盖有源层。反射层位于p型半导体层上，p型电极覆盖反射层。反射层是具有高反射率的导电层，并且形成在p型电极之下，以避免发光器件被金属电极吸收的光。

43. 发明授权

US06429102B1 Method of manufacturing low resistivity p-type compound semiconductor material 有权
标题翻译：制造低电阻率p型化合物半导体材料的方法
公开(公告)号：US06429102B1
公开(公告)日：2002-08-06
申请号：US09497316
申请日：2000-02-03
申请人： Tzong-Liang Tsai , Chung-Ying Chang
发明人： Tzong-Liang Tsai , Chung-Ying Chang
IPC分类号： H01L2120
CPC分类号： H01L33/0095 , H01L21/3245
摘要： The present invention provides a method of manufacturing a low resistivity p-type compound semiconductor material over a substrate. The method of the present invention comprises the steps of forming a p-type impurity doped compound semiconductor layer on the substrate by either HVPE, OMVPE or MBE and applying a microwave treatment over the p-type impurity doped compound semiconductor layer for a period of time. The high resistivity p-type impurity doped compound semiconductor layer is converted into a low resistivity p-type compound semiconductor material according to the present invention.
摘要翻译：本发明提供一种在衬底上制造低电阻率p型化合物半导体材料的方法。本发明的方法包括以下步骤：通过HVPE，OMVPE或MBE在衬底上形成p型杂质掺杂化合物半导体层，并在p型杂质掺杂化合物半导体层上施加微波处理一段时间。根据本发明，高电阻率p型杂质掺杂化合物半导体层被转换为低电阻率p型化合物半导体材料。

44. 发明授权

US06399408B1 Process for producing light emitting device 有权
标题翻译：制造发光装置的方法
公开(公告)号：US06399408B1
公开(公告)日：2002-06-04
申请号：US09783305
申请日：2001-02-15
申请人： Tzong-Liang Tsai , Charng-Shyang Jong
发明人： Tzong-Liang Tsai , Charng-Shyang Jong
IPC分类号： H01L2100
CPC分类号： H01L33/20 , H01L33/0095
摘要： The present invention provides a process for effectively producing a high performance light emitting device. A substrate on which an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer are formed is provided. The N-type semiconductor layer is cut to be discontinuous. Then the substrate is microwaved. Not only the present invention takes advantage of microwaving process for producing a high performance light emitting device, but also avoids the shortcoming of the device cracking due to over activation of the N-type semiconductor layer by microwave processing.
摘要翻译：本发明提供一种有效地制造高性能发光器件的方法。提供了形成有N型半导体层，发光层和P型半导体层的基板。将N型半导体层切割为不连续。然后将基材微波。不仅本发明利用用于制造高性能发光器件的微波处理，而且还避免了由于通过微波处理过度激活N型半导体层而导致器件破裂的缺点。

45. 发明授权

US08247822B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08247822B2
公开(公告)日：2012-08-21
申请号：US12856221
申请日：2010-08-13
申请人： Chih Ching Cheng , Tzong Liang Tsai , Shu Hui Lin
发明人： Chih Ching Cheng , Tzong Liang Tsai , Shu Hui Lin
IPC分类号： H01L27/15
CPC分类号： H01L33/22 , H01L33/20 , H01L2933/0083
摘要： A semiconductor light-emitting device comprises a substrate, a first conductive type semiconductor layer positioned on the substrate, a light-emitting structure positioned on the first conductive type semiconductor layer, and a second conductive type semiconductor layer positioned on the light-emitting structure. The substrate includes an upper surface and a plurality of protrusions positioned on the upper surface. Each of the protrusions includes a top surface, a plurality of wall surfaces, and a plurality of inclined surfaces sandwiched between the top surface and the wall surfaces.
摘要翻译：半导体发光器件包括衬底，位于衬底上的第一导电类型半导体层，位于第一导电类型半导体层上的发光结构和位于发光结构上的第二导电型半导体层。基板包括上表面和位于上表面上的多个突起。每个突起包括顶表面，多个壁表面和夹在顶表面和壁表面之间的多个倾斜表面。

46. 发明授权

US07999273B2 Light emitting device having pillar structure with roughness surface and the forming method thereof 有权
标题翻译：具有粗糙表面的柱结构的发光装置及其形成方法
公开(公告)号：US07999273B2
公开(公告)日：2011-08-16
申请号：US12414753
申请日：2009-03-31
申请人： Tzong-Liang Tsai , Lin-Chieh Kao
发明人： Tzong-Liang Tsai , Lin-Chieh Kao
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/42
摘要： A light emitting device is provided which includes a substrate, a first semiconductor layer having a first region and a second region on the substrate; ac active layer is formed on the first region of the first semiconductor layer; a second semiconductor layer is formed on the active surface layer and the portion surface of the second semiconductor layer is a rough surface; a plurality of pillar structures with a hollow structure, and both of the outer surface and inner surface of the pillar structures are rough surface; a transparent conductive layer is formed to cover the plurality of pillar structures; a first electrode is formed on the transparent conductive layer; and a second electrode is formed on the second region of the first semiconductor layer.
摘要翻译：提供了一种发光器件，其包括衬底，在衬底上具有第一区域和第二区域的第一半导体层; 交流有源层形成在第一半导体层的第一区域上; 在有源表面层上形成第二半导体层，第二半导体层的部分表面是粗糙表面; 具有中空结构的多个柱结构，并且柱结构的外表面和内表面都是粗糙的表面; 形成透明导电层以覆盖多个支柱结构; 在透明导电层上形成第一电极; 并且第二电极形成在第一半导体层的第二区域上。

47. 发明授权

US07973326B2 Semiconductor structure combination for epitaxy of semiconductor optoelectronic device 有权
标题翻译：半导体光电子器件外延半导体结构组合
公开(公告)号：US07973326B2
公开(公告)日：2011-07-05
申请号：US11987640
申请日：2007-12-03
申请人： Chih-Ching Cheng , Tzong-Liang Tsai
发明人： Chih-Ching Cheng , Tzong-Liang Tsai
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/02378 , H01L21/02381 , H01L21/02389 , H01L21/02395 , H01L21/0242 , H01L21/02433 , H01L21/02538 , H01L21/02609 , H01L21/0262
摘要： The invention discloses a semiconductor structure combination for the epitaxy of a semiconductor optoelectronic device and manufacture thereof. The semiconductor structure combination according to the invention includes a substrate and a semiconductor material. The substrate has an upper surface and a recess formed on the upper surface. The sidewalls of the recess provide a first site for the growth of a plurality of first epitaxial crystals of the semiconductor material toward a first preferred orientation. A bottom of the recess provides a second site for the growth of a second epitaxial crystal of the semiconductor material toward the first preferred orientation. Flat regions adjacent to the recess provide a third site for the growth of a third epitaxial crystal of the semiconductor material toward the first preferred orientation.
摘要翻译：本发明公开了一种用于半导体光电子器件外延的半导体结构组合及其制造。根据本发明的半导体结构组合包括基板和半导体材料。基板具有形成在上表面上的上表面和凹部。凹槽的侧壁提供了用于朝向第一优选取向生长半导体材料的多个第一外延晶体的第一位置。凹部的底部提供第二位置，用于朝向第一优选取向生长半导体材料的第二外延晶体。与凹部相邻的平坦区域提供第三位置，用于朝向第一优选取向生长半导体材料的第三外延晶体。

48. 发明授权

US07923744B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07923744B2
公开(公告)日：2011-04-12
申请号：US12755019
申请日：2010-04-06
申请人： Tzong-Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
发明人： Tzong-Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
IPC分类号： H01L29/26
CPC分类号： H01L33/44 , H01L33/20 , H01L2933/0091
摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.
摘要翻译：本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块结构。第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。第一电极形成在第一区域上。在第二区域上形成发光层和第二导电型半导体材料层。凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。在每个凸块结构的侧壁中形成至少一个凹部。或者，每个凸块结构的侧壁具有弯曲的轮廓。

49. 发明申请

US20100230706A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20100230706A1
公开(公告)日：2010-09-16
申请号：US12755019
申请日：2010-04-06
申请人： Tzong Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
发明人： Tzong Liang Tsai , Wei-Kai Wang , Su-Hui Lin , Yi-Cun Lu
IPC分类号： H01L33/02
CPC分类号： H01L33/44 , H01L33/20 , H01L2933/0091
摘要： The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.
摘要翻译：本发明公开了一种半导体发光器件，其包括基板，第一导电型半导体材料层，第二导电型半导体材料层，发光层，第一电极，第二电极和多个凸块结构。第一导电型半导体材料层形成在基板上，并且具有包括第一区域和与第一区域不同的第二区域的上表面。第一电极形成在第一区域上。在第二区域上形成发光层和第二导电型半导体材料层。凸起结构形成在第一导电类型半导体材料层的上表面上，并且在第一区域和第二区域之间。在每个凸块结构的侧壁中形成至少一个凹部。或者，每个凸块结构的侧壁具有弯曲的轮廓。

50. 发明授权

US07768022B2 Light emitting diode and fabricating method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07768022B2
公开(公告)日：2010-08-03
申请号：US11109345
申请日：2005-04-19
申请人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
发明人： Tzong-Liang Tsai , Way-Jze Wen , Chang-Han Chiang , Chih-Sung Chang
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/44
摘要： A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.
摘要翻译：公开了一种发光二极管及其制造方法。在衬底上形成发光二极管外延结构，然后蚀刻发光二极管外延结构以形成凹陷。然后用透明电介质材料填充凹部。粘合层用于粘附导电衬底和发光二极管外延结构。接下来，去除衬底。

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