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71. 发明申请

US20090134413A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20090134413A1
公开(公告)日：2009-05-28
申请号：US12097741
申请日：2006-12-15
申请人： Gundula Roth , Walter Tews , Chung-Hoon Lee
发明人： Gundula Roth , Walter Tews , Chung-Hoon Lee
IPC分类号： H01L31/12
CPC分类号： H01L33/502 , C09K11/661 , C09K11/663 , C09K11/7734 , C09K11/7792 , H01L25/0753 , H01L27/15 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , H05B33/0803 , H05B33/0809 , H05B33/0821 , H05B33/10 , H05B33/14 , H01L2924/00 , H01L2924/00014
摘要： The present invention relates to a light emitting device comprising at least one light emitting diode which emits light in a predetermined wavelength region, copper-alkaline earth metal based inorganic mixed crystals activated by rare earths, which include copper-alkaline earth silicate phosphors which are disposed around the light emitting diode and absorb a portion of the light emitted from the light emitting diode and to emit light different in wavelength from the absorbed light.
摘要翻译：本发明涉及一种发光装置，其包括发射预定波长区域的光的至少一个发光二极管，由稀土活化的铜 - 碱土金属基无机混合晶体，所述无机混合晶体包括铜 - 碱土金属硅酸盐荧光体围绕发光二极管并吸收从发光二极管发出的一部分光并发射波长与吸收光不同的光。

72. 发明申请

US20080265374A1 (Al, Ga, In)N-BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：（Al，Ga，In）N基化合物半导体及其制造方法
公开(公告)号：US20080265374A1
公开(公告)日：2008-10-30
申请号：US12132760
申请日：2008-06-04
申请人： Chung Hoon LEE
发明人： Chung Hoon LEE
IPC分类号： H01L29/20 , H01L21/205
CPC分类号： H01L33/40 , H01L33/0095 , H01L33/32
摘要： Disclosed are a (Al, Ga, In)N-based compound semiconductor device and a method of fabricating the same. The (Al, Ga, In)N-based compound semiconductor device of the present invention comprises a substrate; a (Al, Ga, In)N-based compound semiconductor layer grown on the substrate; and an electrode formed of at least one material or an alloy thereof selected from the group consisting of Pt, Pd and Au on the (Al, Ga, In)N-based compound semiconductor layer. Further, the method of fabricating the (Al, Ga, In)N-based compound semiconductor device comprises the steps of growing a P layer including P type impurities in a growth chamber; discharging hydrogen and a hydrogen source gas in the growth chamber; lowering the temperature of the (Al, Ga, In)N-based compound semiconductor with the P layer formed thereon to such an extent that it can be withdrawn to the outside from the growth chamber; withdrawing the (Al, Ga, In)N-based compound semiconductor from the growth chamber; and forming an electrode of at least one material or an alloy thereof selected from the group consisting of Pt, Pd and Au on the p layer. According to the present invention, it is possible to sufficiently secure P type conductivity and obtain good ohmic contact characteristics without performing an annealing process. And, no further annealing is necessary when Pt, Pd, Au electrode are used.
摘要翻译：公开了一种（Al，Ga，In）N基化合物半导体器件及其制造方法。本发明的（Al，Ga，In）N基化合物半导体器件包括：衬底; 在衬底上生长的（Al，Ga，In）N基化合物半导体层; 以及在（Al，Ga，In）N基化合物半导体层上由选自Pt，Pd和Au的至少一种材料或其合金形成的电极。此外，制造（Al，Ga，In）N基化合物半导体器件的方法包括在生长室中生长包含P型杂质的P层的步骤; 在生长室中排出氢和氢源气体; 降低其上形成有P层的（Al，Ga，In）N基化合物半导体的温度至可从生长室抽出到外部的程度; 从生长室中取出（Al，Ga，In）N基化合物半导体; 以及在p层上形成选自Pt，Pd和Au中的至少一种材料或其合金的电极。根据本发明，可以在不进行退火处理的情况下充分确保P型导电性并获得良好的欧姆接触特性。并且，当使用Pt，Pd，Au电极时，不需要进一步的退火。

73. 发明授权

US07361940B2 Leadframe and packaged light emitting diode 有权
标题翻译：引线框和封装发光二极管
公开(公告)号：US07361940B2
公开(公告)日：2008-04-22
申请号：US11178144
申请日：2005-07-08
申请人： Do Hyung Kim , Chung Hoon Lee , Keon Young Lee
发明人： Do Hyung Kim , Chung Hoon Lee , Keon Young Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L23/4334 , H01L24/48 , H01L25/0753 , H01L33/642 , H01L33/647 , H01L2224/48091 , H01L2924/00014 , H01L2924/01079 , H01L2924/12041 , H01L2924/181 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2924/00
摘要： A leadframe that is configured to be used with an electronic device, e.g., light emitting diode (LED), includes a heat sink supporting ring for supporting a heat sink. An outer frame is spaced apart from the heat sink supporting ring, and encloses the heat sink supporting ring. At least one supporting lead connects the heat sink supporting ring and the outer frame. A separated lead is extended from the outer frame toward the heat sink supporting ring, and is spaced apart from the heat sink supporting ring. A package body that may be formed by an injection molding after a heat sink is inserted into the leadframe.
摘要翻译：被配置为与诸如发光二极管（LED）的电子设备一起使用的引线框架包括用于支撑散热器的散热器支撑环。外框架与散热器支撑环间隔开，并且包围散热器支撑环。至少一个支撑引线连接散热器支撑环和外框。分离的引线从外框架朝向散热器支撑环延伸，并且与散热器支撑环间隔开。可以在散热器之后通过注射成型形成的封装体插入引线框架中。

74. 发明申请

US20080067920A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20080067920A1
公开(公告)日：2008-03-20
申请号：US11948845
申请日：2007-11-30
申请人： Gundula ROTH , Walter TEWS , Chung-Hoon LEE
发明人： Gundula ROTH , Walter TEWS , Chung-Hoon LEE
IPC分类号： H01J1/62
CPC分类号： C09K11/7734 , C09K11/665 , C09K11/666 , C09K11/753 , C09K11/756 , C09K11/7735 , C09K11/7738 , C09K11/7739 , C09K11/774 , C09K11/7751 , C09K11/7756 , C09K11/7792 , C09K11/7796 , H01L33/502 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014
摘要： A light emitting device is disclosed. The light emitting device may include a light emitting diode (LED) for emitting light and a phosphor adjacent to the LED. The phosphor may be excitable by light emitted by the LED and may include a first compound having a host lattice comprising first ions and oxygen. In one embodiment, the host lattice may include silicon, the copper ions may be divalent copper ions and the first compound may have an Olivin crystal structure, a β-K2SO4 crystal structure, a trigonal Glaserite (K3Na(SO4)2) or monoclinic Merwinite crystal structure, a tetragonal Ackermanite crystal structure, a tetragonal crystal structure or an orthorhombic crystal structure. In another embodiment, the copper ions do not act as luminescent ions upon excitation with the light emitted by the LED.
摘要翻译：公开了一种发光器件。发光器件可以包括用于发射光的发光二极管（LED）和与LED相邻的磷光体。磷光体可以由LED发出的光可激发，并且可以包括具有包含第一离子和氧的主晶格的第一化合物。在一个实施方案中，主晶格可以包括硅，铜离子可以是二价铜离子，并且第一化合物可以具有橄榄石晶体结构，β-K 2 SO 4晶体结构，三角形镓石（K 3 N 3） Na（SO 4 SO 2）2）或单斜晶系的Merwinite晶体结构，四方晶系晶体结构，四方晶系结构或正交晶体结构。在另一个实施方案中，当由LED发射的光激发时，铜离子不起荧光离子的作用。

75. 发明申请

US20070284563A1 LIGHT EMITTING DEVICE INCLUDING RGB LIGHT EMITTING DIODES AND PHOSPHOR 有权
标题翻译：包括RGB发光二极管和磷光体的发光装置
公开(公告)号：US20070284563A1
公开(公告)日：2007-12-13
申请号：US11569060
申请日：2005-05-03
申请人： Chung-Hoon LEE , Gundula ROTH , Walter TEWS
发明人： Chung-Hoon LEE , Gundula ROTH , Walter TEWS
IPC分类号： H01L29/06
CPC分类号： H01L33/504 , H01L25/0753 , H01L33/486 , H01L33/50 , H01L33/52 , H01L33/64 , H01L2224/32013 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2924/00014 , H01L2924/00
摘要： Disclosed herein is a light emitting device including at least three light emitting diodes having different peak emission wavelengths to primarily emit light in a blue, green or red wavelength range, and a wavelength-conversion means to convert primary light into secondary light in a visible light wavelength range, The light emitting device of the current invention has a high color temperature of 2,000 to 8,000 K or 10,000 K and a high color rendering index of 90 or more, and emits yellow-green light or orange light having a wide emission wavelength range. Since the light emitting device having high color temperature and excellent color rendering properties can easily realize desired emission on the color coordinate system, it is applicable to mobile phones, notebook computers, and keypads or backlight units for various electronic products, and in particular, automobiles and exterior and interior lighting fixtures.
摘要翻译：本文公开了一种发光器件，其包括具有不同峰值发射波长的至少三个发光二极管以主要发射蓝色，绿色或红色波长范围的光;以及波长转换装置，用于将原始光转换成可见光中的次级光波长范围本发明的发光元件具有2000〜8,000K或10,000K以上的高色温，90以上的高显色指数，并且发射具有宽发光波长范围的黄绿色或橙色光。由于具有高色温和优异显色性的发光器件可以容易地实现色坐标系上所需的发射，因此它可应用于各种电子产品的手机，笔记本电脑和键盘或背光单元，特别是汽车和室内和室内照明灯具。

76. 发明授权

US06858888B2 Stress control of semiconductor microstructures for thin film growth 有权
标题翻译：用于薄膜生长的半导体微结构的应力控制
公开(公告)号：US06858888B2
公开(公告)日：2005-02-22
申请号：US10302777
申请日：2002-11-22
申请人： Amit Lal , Max G. Lagally , Chung Hoon Lee , Paul Powell Rugheimer
发明人： Amit Lal , Max G. Lagally , Chung Hoon Lee , Paul Powell Rugheimer
IPC分类号： B81B3/00 , B81C1/00 , H01L29/04 , H01L29/786 , H01L29/80 , H01L29/82 , H01L31/036 , H01L31/112
CPC分类号： B81C1/00666 , B81C2201/0167 , B82Y10/00 , B82Y30/00 , H01L29/78603 , H01L29/78639 , Y10S438/962
摘要： A suspended semiconductor film is anchored to a substrate at at least two opposed anchor positions, and film segments are deposited on the semiconductor film adjacent to one or more of the anchor positions to apply either tensile or compressive stress to the semiconductor film between the film segments. A crystalline silicon film may be anchored to the substrate and have tensile stress applied thereto to reduce the lattice mismatch between the silicon and a silicon-germanium layer deposited onto the silicon film. By controlling the level of stress in the silicon film, the size, density and distribution of quantum dots formed in a high germanium content silicon-germanium film deposited on the silicon film can be controlled.
摘要翻译：悬浮的半导体膜在至少两个相对的锚固位置处锚定到基底，并且膜部分沉积在与一个或多个锚定位置相邻的半导体膜上，以将拉伸或压缩应力施加到膜段之间的半导体膜。结晶硅膜可以锚定到基底并且施加拉伸应力以减小硅和沉积在硅膜上的硅 - 锗层之间的晶格失配。通过控制硅膜中的应力水平，可以控制沉积在硅膜上的高锗含量硅 - 锗膜中形成的量子点的尺寸，密度和分布。

77. 发明申请

US20050017259A1 Chip light emitting diode and fabrication method thereof 有权
标题翻译：芯片发光二极管及其制造方法
公开(公告)号：US20050017259A1
公开(公告)日：2005-01-27
申请号：US10754389
申请日：2004-01-09
申请人： Kwan-Young Han , Do-Hyung Kim , Seung-Man Yang , Chung-Hoon Lee , Hong-San Kim , Kwang-Il Park
发明人： Kwan-Young Han , Do-Hyung Kim , Seung-Man Yang , Chung-Hoon Lee , Hong-San Kim , Kwang-Il Park
IPC分类号： H01L33/54 , H01L27/15 , H01L33/56 , H01L33/62 , H01L33/64 , H01L33/00
CPC分类号： H01L33/54 , H01L33/486 , H01L2224/48091 , H01L2924/1815 , H01L2924/00014
摘要： A chip light emitting diode having a wide viewing angle, and a fabrication method thereof. The chip light emitting diode has a resin package sealing a light emitting chip which has at least one curved projecting part. The curved projecting part has a cross section which is substantially semicircular, or substantially or partially elliptical or parabolic. The curved projecting part preferably has a cross section which is comprised of a plurality of straight lines, an angle being formed between adjacent lines. The cross section is elongated to form a cylindrical outer surface of the resin package.
摘要翻译：具有宽视角的芯片发光二极管及其制造方法。芯片发光二极管具有密封具有至少一个弯曲突出部分的发光芯片的树脂封装。弯曲的突出部分具有基本上是半圆形的或基本上或部分是椭圆形或抛物线形的横截面。弯曲的突出部分优选地具有由多条直线组成的横截面，在相邻线之间形成一角度。横截面是细长的以形成树脂封装的圆柱形外表面。

78. 发明授权

US06638249B1 Ultrasonically actuated needle pump system 有权
标题翻译：超声波驱动针泵系统
公开(公告)号：US06638249B1
公开(公告)日：2003-10-28
申请号：US09617478
申请日：2000-07-17
申请人： Amit Lal , Chung-Hoon Lee
发明人： Amit Lal , Chung-Hoon Lee
IPC分类号： A61M100
CPC分类号： A61B5/14514 , A61B5/150022 , A61B5/150083 , A61B5/150297 , A61B5/150389 , A61B5/150503 , A61B5/150946 , A61B5/150977 , A61B5/15142 , A61B2010/008 , A61B2017/00765 , A61M37/0092
摘要： An ultrasonically driven pump, which may be used for sampling body fluids or atomizing liquids, has a stationary outer needle and an inner needle mounted within the bore of the outer needle. The distal end of the inner needle is positioned adjacent to the distal end of the outer needle. The inner needle is ultrasonically vibrated by an ultrasonic actuator without vibrating the outer needle, with resulting draw of liquid through the distal end of the outer needle into the bore of the inner needle for discharge through the proximal end of the inner needle. The outer needle can be formed to have a penetrating tip suited for penetrating the skin of a subject to allow sampling of body fluids including interstitial fluids. The pump can also be used for atomizing liquid, by drawing liquid from a supply that is pumped from the distal end to an open proximal end of the inner needle where the liquid is discharged by atomization into the atmosphere.
摘要翻译：可用于取样体液或雾化液体的超声波泵具有固定的外针和安装在外针的孔内的内针。内针的远端定位成与外针的远端相邻。内针被超声波致动器超声波振动，而不会使外针振动，从而将液体从外针的远端抽出到内针的孔中，以通过内针的近端排出。外针可以形成为具有适于穿透受试者皮肤的穿透尖端，以允许对包括间质液的体液进行取样。该泵还可用于雾化液体，其是从从远端泵送到内针的开口近端的液体从液体通过雾化排放到大气中排出液体。

79. 发明申请

US20180342653A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING CONDUCTIVE ADHESIVE AND SEMICONDUCTOR DEVICE FABRICATED BY THE SAME 审中-公开
公开(公告)号：US20180342653A1
公开(公告)日：2018-11-29
申请号：US16034963
申请日：2018-07-13
申请人： Chung Hoon LEE , Dae Sung KAL , Ki Bum NAM
发明人： Chung Hoon LEE , Dae Sung KAL , Ki Bum NAM
IPC分类号： H01L33/50 , H01L33/36 , H01L33/44 , H01L23/00 , H01L33/00 , H01L23/498 , H01L33/48
摘要： A semiconductor device including a first lead electrode and a second lead electrode on a lead frame; a semiconductor stack structure disposed on the lead frame, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a conductive adhesive configured to bond the semiconductor stack structure to the lead frame; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

80. 发明授权

US09711693B2 Method of fabricating semiconductor device using gang bonding and semiconductor device fabricated by the same 有权
公开(公告)号：US09711693B2
公开(公告)日：2017-07-18
申请号：US14731046
申请日：2015-06-04
申请人： Chung Hoon Lee , Dae Sung Kal , Ki Bum Nam
发明人： Chung Hoon Lee , Dae Sung Kal , Ki Bum Nam
IPC分类号： H01L33/50 , H01L23/00 , H01L23/498 , H01L33/36 , H01L33/44 , H01L33/00 , H01L33/48
CPC分类号： H01L33/507 , H01L23/49805 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/33 , H01L24/83 , H01L24/94 , H01L33/005 , H01L33/0079 , H01L33/0095 , H01L33/36 , H01L33/44 , H01L33/486 , H01L33/50 , H01L2224/04026 , H01L2224/05073 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05171 , H01L2224/05553 , H01L2224/05571 , H01L2224/06151 , H01L2224/11462 , H01L2224/16013 , H01L2224/16057 , H01L2224/16151 , H01L2224/27462 , H01L2224/32238 , H01L2224/325 , H01L2224/33151 , H01L2224/81893 , H01L2224/83447 , H01L2224/83455 , H01L2224/83893 , H01L2224/94 , H01L2224/97 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2933/0033 , H01L2924/00012 , H01L2924/00014 , H01L2224/81 , H01L2924/00
摘要： A semiconductor device including a first lead electrode and a second lead electrode; a semiconductor stack structure disposed on the member, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a plating layer configured to bond the semiconductor stack structure to the member; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

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