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    • 72. 发明授权
    • Method and system for handover in mobile communication network
    • 移动通信网中切换的方法和系统
    • US07801081B2
    • 2010-09-21
    • US11847843
    • 2007-08-30
    • Yong-Seouk ChoiKyung-Soo Kim
    • Yong-Seouk ChoiKyung-Soo Kim
    • H04Q7/20H04Q7/00H04B7/216
    • H04W36/0083H04W84/005
    • A handover method according to an embodiment of the present invention includes: receiving neighboring base station information at a wireless relay station providing a wireless communication service moving together with a plurality of subscriber stations that move along the same moving path; performing scanning to check a wireless environment state of a neighboring base station using the received neighboring base station information; performing handover of the plurality of subscriber stations to a target base station as a single handover unit, when a handover condition is met during the scanning; and notifying the subscriber station of completion of handover preparation with the target base station.
    • 根据本发明实施例的切换方法包括:在无线中继站处接收邻近基站信息,所述无线中继站提供与沿着相同移动路径移动的多个用户站一起移动的无线通信服务; 执行扫描以使用所接收的相邻基站信息来检查相邻基站的无线环境状态; 当在扫描期间满足切换条件时,执行作为单个切换单元的多个用户站到目标基站的切换; 并向目标基站通知用户台完成切换准备。
    • 75. 发明申请
    • Trench isolation methods of semiconductor device
    • 半导体器件的沟槽隔离方法
    • US20080032483A1
    • 2008-02-07
    • US11973044
    • 2007-10-05
    • Hyuk-Ju RyuHeon-Jong ShinHee-Sung KangChoong-Ryul RyouMu-Kyeng JungKyung-Soo Kim
    • Hyuk-Ju RyuHeon-Jong ShinHee-Sung KangChoong-Ryul RyouMu-Kyeng JungKyung-Soo Kim
    • H01L21/78
    • H01L21/76237H01L21/76224H01L21/823878
    • In a trench isolation method, a semiconductor substrate having an N-MOS region and a P-MOS region is prepared. A first mask pattern exposing an N-MOS field region is formed on the N-MOS region, and a second mask pattern exposing a P-MOS field region is formed on the P-MOS region. A first photoresist pattern is formed to cover the P-MOS region and expose the N-MOS region. First impurity ions are implanted into the N-MOS region, using the first mask pattern and the first photoresist pattern as ion implantation masks, thereby forming a first impurity layer in the N-MOS field region. In this case, a portion of the first impurity layer is formed to extend below the first mask pattern. The first photoresist pattern is removed. The semiconductor substrate is etched using the first and second mask patterns as etch masks, thereby forming trenches in the N-MOS field region and the P-MOS field region and concurrently, forming a first impurity pattern of the first impurity layer remaining below the first mask pattern. A trench isolation layer filling the trenches is then formed.
    • 在沟槽隔离方法中,制备具有N-MOS区和P-MOS区的半导体衬底。 在N-MOS区形成露出N-MOS场区的第一掩模图案,在P-MOS区形成露出P-MOS场区的第二掩模图案。 形成第一光致抗蚀剂图案以覆盖P-MOS区并暴露N-MOS区。 使用第一掩模图案和第一光致抗蚀剂图案作为离子注入掩模将第一杂质离子注入到N-MOS区域中,从而在N-MOS场区域中形成第一杂质层。 在这种情况下,第一杂质层的一部分形成为延伸到第一掩模图案的下方。 去除第一光致抗蚀剂图案。 使用第一和第二掩模图案作为蚀刻掩模蚀刻半导体衬底,从而在N-MOS场区和P-MOS场区中形成沟槽,同时,形成第一杂质图案的第一杂质图案保留在第一 掩模图案。 然后形成填充沟槽的沟槽隔离层。
    • 78. 发明授权
    • Apparatus and method for processing interleaving/deinterleaving with address generator and channel encoding system using the same
    • 用于使用该地址发生器和信道编码系统处理交织/解交织的装置和方法
    • US06735723B2
    • 2004-05-11
    • US09750186
    • 2000-12-29
    • Hyung-Il ParkIk-Soo EoKyung-Soo Kim
    • Hyung-Il ParkIk-Soo EoKyung-Soo Kim
    • G06F1100
    • H03M13/2782H03M13/2707H03M13/271H03M13/276H03M13/2764
    • An interleaving/deinterleaving processing method, a channel encoding system using it and a computer readable recording media for realizing it is provided. The interleaver includes: an interleaving storing unit for storing data sequence; the writing address generating unit for obtaining inter-location offset of a memory on which symbols are to be written in order to perform a writing operation and for generating a writing address to be practically written on, data and a memory control signal; an address offset generating unit for receiving a middle value (MID_OFF) and a start signal from the writing address generating unit, the middle value and the start signal being used for obtaining an offset between an inter-location offset of the memory; a reading address generating unit for generating increasing the address offset generating unit originated signal to as much as a symbol's memory inter-location offset; the first and the second selecting unit for selecting appropriate signal between a control signal and address in the writing address generating unit and the reading address generating unit transferred writing operation needed reading operation, and in a real interleaving operation needed reading operation; and a third selecting unit for selecting appropriate symbol in the memory output signals and performed from the reading address generating unit transferred interleaving.
    • 提供了一种交织/解交织处理方法,使用该方法的信道编码系统和用于实现它的计算机可读记录介质。 交织器包括:交织存储单元,用于存储数据序列; 写入地址生成单元,用于获得要写入符号的存储器的位置间偏移,以便执行写入操作并用于产生实际写入的写入地址,数据和存储器控制信号; 地址偏移生成单元,用于从所述写入地址生成单元接收中间值(MID_OFF)和起始信号,所述中间值和所述起始信号用于获得所述存储器的位置间偏移之间的偏移; 读取地址生成单元,用于产生将地址偏移生成单元发起的信号增加到符号的存储器位置间偏移量; 第一和第二选择单元,用于在写入地址生成单元中的控制信号和地址之间选择适当的信号,读取地址生成单元传送写入操作所需的读取操作,以及需要读取操作的实际交织操作; 以及第三选择单元,用于从存储器输出信号中选择适当的符号,并从读取地址生成单元传送的交织执行。