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81. 发明申请

US20140252517A1 Thin Seeded Antiferromagnetic Coupled Side Shield for Sensor Biasing Applications 有权
标题翻译：用于传感器偏置应用的薄种子反铁磁耦合侧面屏蔽
公开(公告)号：US20140252517A1
公开(公告)日：2014-09-11
申请号：US13785227
申请日：2013-03-05
申请人： HEADWAY TECHNOLOGIES, INC.
发明人： Kunliang Zhang , Yewhee Chye , Min Li , Glen Garfunkel
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： G11B5/3932 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/398
摘要： A composite side shield structure is disclosed for providing biasing to a free layer in a sensor structure. The sensor is formed between a bottom shield and top shield each having a magnetization in a first direction that is parallel to an ABS. The side shield is stabilized by an antiferromagnetic (AFM) coupling scheme wherein a bottom (first) magnetic layer is AFM coupled to a second magnetic layer which in turn is AFM coupled to an uppermost (third) magnetic layer. First and third magnetic layers each have a magnetization aligned in the first direction and are coupled to bottom and top shields, respectively, for additional stabilization. The top shield may be modified to include an AFM scheme for providing additional stabilization and guidance to magnetic moments within AFM coupled magnetic layers in the top shield, and to the third magnetic layer in the side shield.
摘要翻译：公开了一种用于向传感器结构中的自由层提供偏压的复合侧面屏蔽结构。传感器形成在底部屏蔽和顶部屏蔽之间，每个屏蔽和顶部屏蔽均具有平行于ABS的第一方向的磁化。侧面屏蔽通过反铁磁（AFM）耦合方案来稳定，其中底部（第一）磁性层是AFM耦合到第二磁性层，第二磁性层又被耦合到最高（第三）磁性层。第一和第三磁性层各自具有在第一方向上对准的磁化，并且分别耦合到底部和顶部屏蔽件以用于额外的稳定。顶部屏蔽可以被修改为包括AFM方案，用于为顶部屏蔽中的AFM耦合磁性层内的磁矩和侧面屏蔽中的第三磁性层提供额外的稳定和引导。

82. 发明授权

US08824102B2 Thin-film magnetic head with improved wide area track erasure (WATE), method of manufacturing the same, head gimbal assembly, and hard disk drive 有权
标题翻译：具有改善的广域轨道擦除（WATE）的薄膜磁头，其制造方法，头万向架组件和硬盘驱动器
公开(公告)号：US08824102B2
公开(公告)日：2014-09-02
申请号：US13099729
申请日：2011-05-03
申请人： Yoshitaka Sasaki , Hiroyuki Ito , Shigeki Tanemura , Kazuki Sato , Atsushi Iijima
发明人： Yoshitaka Sasaki , Hiroyuki Ito , Shigeki Tanemura , Kazuki Sato , Atsushi Iijima
IPC分类号： G11B5/31 , G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116 , Y10T29/49032 , Y10T428/1186
摘要： A thin-film magnetic head includes a main magnetic pole layer, write shield layer, gap layer, and thin-film coils, which are laminated on a substrate. A return magnetic pole layer is spaced from the medium-opposing surface on the side opposite to the write shield layer with the main magnetic pole layer intervening therebetween. A connecting magnetic layer is formed using a magnetic material to connect the return magnetic pole layer to the write shield layer on the side closer to the medium-opposing surface than is the thin-film coil. The thin-film coil is wound as a flat spiral around the write shield layer. A part of the thin-film coil wound as the flat spiral is disposed only at a position distanced from the substrate than is the main magnetic pole layer.
摘要翻译：薄膜磁头包括层叠在基板上的主磁极层，写入屏蔽层，间隙层和薄膜线圈。返回磁极层与写入屏蔽层相对的一侧的介质相对表面间隔开，主磁极层介于它们之间。使用磁性材料形成连接磁性层，以使返回磁极层与薄膜线圈相比更靠近介质相对表面的一侧将写入屏蔽层连接。薄膜线圈围绕写入屏蔽层缠绕成平坦的螺旋线。作为扁平螺旋卷绕的薄膜线圈的一部分仅设置在与主磁极层相比离开基板的位置。

83. 发明申请

US20140241137A1 Tilted Structures to Reduce Reflection in Laser-Assisted TAMR 有权
标题翻译：倾斜结构以减少激光辅助TAMR中的反射
公开(公告)号：US20140241137A1
公开(公告)日：2014-08-28
申请号：US13778983
申请日：2013-02-27
申请人： HEADWAY TECHNOLOGIES, INC.
发明人： Xuhui Jin , Xiaohua Lou , Joe Smyth , Moris Dovek
IPC分类号： G11B13/04 , G11B5/127
CPC分类号： G11B5/4866 , G11B5/127 , G11B5/314 , G11B5/6005 , G11B5/6088 , G11B13/04 , G11B2005/0021 , Y10T29/49032
摘要： A TAMR (Thermal Assisted Magnetic Recording) write head uses the energy of optical-laser excited surface plasmons in a plasmon generator to locally heat a magnetic recording medium and reduce its coercivity and magnetic anisotropy. The optical radiation is transmitted to the plasmon generator by means of a waveguide, whose optical axis (centerline) is tilted relative to either or both the backside surface normal and ABS surface normal in order to eliminate back reflections of the optical radiation that can adversely affect the properties and performance of the laser. Variations of the disclosure include tilting the plasmon generator, the waveguide and the laser diode.
摘要翻译： TAMR（热辅助磁记录）写头使用等离子体发生器中的激光激光表面等离激元的能量来局部加热磁记录介质并降低其矫顽力和磁各向异性。光辐射通过波导传输到等离子体发生器，该波导的光轴（中心线）相对于背面法线和ABS表面法线中的任一个或两者倾斜，以消除可能不利地影响的光辐射的反射反射激光的性能和性能。本公开的变型包括倾斜等离子体发生器，波导和激光二极管。

84. 发明授权

US08804281B1 PMR write head with modified main pole shape to minimize adjacent track interference 有权
标题翻译： PMR写头具有修改的主极形状，以尽量减少相邻的轨道干扰
公开(公告)号：US08804281B1
公开(公告)日：2014-08-12
申请号：US13889084
申请日：2013-05-07
申请人： Headway Technologies, Inc.
发明人： Yuhui Tang , Lijie Guan , Suping Song , Yaguang Wei
IPC分类号： G11B5/147
CPC分类号： G11B5/315 , G11B5/1278 , G11B5/3116
摘要： A magnetic writer has a magnetic pole with projections extending laterally and symmetrically from each side. The pole tip of the magnetic pole is positioned at the ABS of the writer where it is surrounded in a mirror-symmetric fashion by side shields that are co-planar with the ABS. The projections can be the ends of a rectangular bar of soft or hard magnetic material, different than the main pole material, passing completely through the main pole and parallel to the ABS or they can be part of the peripheral shape of the main pole without changes to its material structure. In either case, they impart a shape anisotropy to the main pole and dilute the otherwise concentrated magnetic flux emerging from the pole tip that cause flux leakage from the side shields and undesirable adjacent track interference.
摘要翻译：磁性写入器具有磁极，其具有从每侧侧向和对称延伸的突起。磁极的极尖位于写入器的ABS处，其被以与镜面对称的方式围绕与ABS共面的侧面屏蔽。突起可以是与主极材料不同的软或硬磁性材料的矩形棒的端部，完全穿过主极并平行于ABS，或者它们可以是主极的外围形状的一部分而没有变化到其材料结构。在这两种情况下，它们赋予主极的形状各向异性，并且稀释从磁极尖端出来的另外浓缩的磁通量，从而引起从侧屏蔽物的漏磁和不期望的相邻磁道干涉。

85. 发明申请

US20140217531A1 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications 审中-公开
标题翻译：具有改进的磁性器件应用的平面各向异性的Co / Ni多层
公开(公告)号：US20140217531A1
公开(公告)日：2014-08-07
申请号：US14244943
申请日：2014-04-04
申请人： Headway Technologies, Inc.
发明人： Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
IPC分类号： H01L43/10
CPC分类号： H01L43/12 , G11C11/161 , H01F10/30 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L29/66007 , H01L29/66984 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / X）n或（CoX）n组合物（其中n为2至30）X覆盖层叠层中的垂直磁各向异性（PMA）是V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX是无序合金。种子层优选为NiCr，NiFeCr，Hf或其复合物，厚度为10至100埃。此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。叠层可以用作MTJ中的参考层，偶极子层或自由层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

86. 发明申请

US20140217530A1 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications 审中-公开
标题翻译：具有改进的磁性器件应用的平面各向异性的Co / Ni多层
公开(公告)号：US20140217530A1
公开(公告)日：2014-08-07
申请号：US14244940
申请日：2014-04-04
申请人： Headway Technologies, Inc.
发明人： Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
IPC分类号： H01L43/10
CPC分类号： H01L43/12 , G11C11/161 , H01F10/30 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L29/66007 , H01L29/66984 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A MTJ for a spintronic device that is a domain wall motion device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. The seed layer is preferably NiCr, NiFeCr, Hf, or a composite thereof with a thickness from 10 to 100 Angstroms. Furthermore, a magnetic layer such as CoFeB may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：公开了一种作为畴壁运动装置的自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / X）n或（CoX）n组合物在上层叠层中增强垂直磁各向异性（PMA），其中n 为2〜30，X为V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX为无序合金。种子层优选为NiCr，NiFeCr，Hf或其复合物，厚度为10至100埃。此外，可以在层压层和隧道势垒层之间形成诸如CoFeB的磁性层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。叠层可以用作MTJ中的参考层，偶极子层或自由层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

87. 发明授权

US08795763B2 Perpendicular magnetic medium with shields between tracks 有权
标题翻译：轨道之间具有屏蔽的垂直磁性介质
公开(公告)号：US08795763B2
公开(公告)日：2014-08-05
申请号：US12005182
申请日：2007-12-26
申请人： Yuchen Zhou , Lijie Guan , Kunliang Zhang
发明人： Yuchen Zhou , Lijie Guan , Kunliang Zhang
IPC分类号： G11B5/74
CPC分类号： G11B5/746 , B82Y10/00 , C23C14/225 , C23C16/45555 , G11B5/743 , G11B5/82 , G11B5/855
摘要： A track shield structure is disclosed that enables higher track density to be achieved in a patterned track medium without increasing adjacent track erasure and side reading. This is accomplished by placing a soft magnetic shielding structure in the space that is present between the tracks in the patterned medium. A process for manufacturing the added shielding structure is also described.
摘要翻译：公开了一种轨道屏蔽结构，其能够在图案化的轨道介质中实现更高的轨道密度，而不增加相邻轨迹擦除和侧面读数。这通过在存在于图案化介质中的轨道之间的空间中放置软磁屏蔽结构来实现。还描述了用于制造附加的屏蔽结构的方法。

88. 发明授权

US08787129B1 Polarization rotator for thermally assisted magnetic recording 有权
标题翻译：用于热辅助磁记录的极化旋转器
公开(公告)号：US08787129B1
公开(公告)日：2014-07-22
申请号：US13785280
申请日：2013-03-05
申请人： Headway Technologies, Inc.
发明人： Xuhui Jin , Hiroyuki Ito , Yoshitaka Sasaki , Shigeki Tanemura
IPC分类号： G11B11/00
CPC分类号： G02B6/105 , G02B2006/12173 , G02B2006/12176 , G11B5/314 , G11B5/4866 , G11B5/6088 , G11B2005/0021 , Y10T29/49032
摘要： A waveguide structure with a light polarization rotator section for converting transverse electric light from a TE light source to transverse magnetic light which is subsequently coupled to a plasmon generator (PG) is disclosed. Wavelengths above 800 nm are advantageously used to reduce resistive heating in the PG, and in adjacent cladding and write pole layers to improve the thermally assisted magnetic recording head lifetime. The light polarization rotator section has a length determined by TE LD light wavelength, and the effective mode index of the two orthogonal fundamental modes, and preferably has a symmetric structure including a sloped side with a 45 degree angle with respect to a bottom surface. A vertical side of the light polarization rotator section may be coplanar with sides of adjacent waveguide sections. Offsets to the cross-track width are used to improve symmetry for higher TE to TM polarization conversion efficiency.
摘要翻译：公开了一种具有光偏转旋转部分的波导结构，用于将TE光源的横向电光转换成后耦合到等离子体发生器（PG）的横向磁光。高于800nm的波长有利地用于减少PG中的电阻加热，以及相邻的包层和写极层中的电阻加热，以改善热辅助磁记录头寿命。光偏振旋转部具有通过TE LD光波长确定的长度和两个正交基模的有效模式指数，并且优选地具有包括相对于底面具有45度角的倾斜侧的对称结构。光偏振旋转器部分的垂直侧可以与相邻波导部分的侧面共面。用于跨轨道宽度的偏移用于改善对称性，以实现更高的TE至TM偏振转换效率。

89. 发明授权

US08786036B2 Magnetic tunnel junction for MRAM applications 有权
标题翻译：用于MRAM应用的磁隧道结
公开(公告)号：US08786036B2
公开(公告)日：2014-07-22
申请号：US12930877
申请日：2011-01-19
申请人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
发明人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
IPC分类号： H01L43/10 , H01L27/22
CPC分类号： H01L43/10 , G11C11/161 , H01L27/222 , H01L43/00 , H01L43/02 , H01L43/08
摘要： A MTJ in an MRAM array is disclosed with a composite free layer having a lower crystalline layer contacting a tunnel barrier and an upper amorphous NiFeX layer for improved bit switching performance. The crystalline layer is Fe, Ni, or FEB with a thickness of at least 6 Angstroms which affords a high magnetoresistive ratio. The X element in the NiFeX layer is Mg, Hf, Zr, Nb, or Ta with a content of 5 to 30 atomic % NiFeX thickness is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. In an alternative embodiments, the crystalline layer may be a Fe/NiFe bilayer. Optionally, the amorphous layer may have a NiFeM1/NiFeM2 configuration where M1 and M2 are Mg, Hf, Zr, Nb, or Ta, and M1 is unequal to M2. Annealing at 300° C. to 360° C. provides a high magnetoresistive ratio of about 150%.
摘要翻译：公开了具有接触隧道势垒的较低结晶层和上部非晶NiFeX层的复合自由层的MRAM阵列中的MTJ，用于改善位切换性能。结晶层是厚度至少为6埃的Fe，Ni或FEB，其具有高的磁阻比。 NiFeX层中的X元素为含有5〜30原子％NiFeX厚度的Mg，Hf，Zr，Nb或Ta优选为20〜40埃，以显着降低位线切换电流和短路位数。在替代实施例中，结晶层可以是Fe / NiFe双层。可选地，非晶层可以具有其中M1和M2是Mg，Hf，Zr，Nb或Ta的NiFeM1 / NiFeM2构型，M1不等于M2。在300℃至360℃退火，提供约150％的高磁阻比。

90. 发明授权

US08780497B2 Magnetic head for perpendicular magnetic recording having a return path section 有权
标题翻译：具有返回路径部分的垂直磁记录用磁头
公开(公告)号：US08780497B2
公开(公告)日：2014-07-15
申请号：US13493652
申请日：2012-06-11
申请人： Yoshitaka Sasaki , Hiroyuki Ito , Kazuki Sato , Seiichiro Tomita , Hironori Araki , Tatsuya Shimizu
发明人： Yoshitaka Sasaki , Hiroyuki Ito , Kazuki Sato , Seiichiro Tomita , Hironori Araki , Tatsuya Shimizu
IPC分类号： G11B5/17
CPC分类号： G11B5/17 , G11B5/1278 , G11B5/3116 , G11B5/3123
摘要： A magnetic head includes first and second coils, a main pole, a write shield, a return path section, and a core part. The return path section includes a yoke part magnetically connected to the write shield, and a coupling part located away from a medium facing surface and magnetically coupling the yoke part and the main pole to each other. The first coil is located on the front side in the direction of travel of a recording medium relative to the main pole and wound around the coupling part. The core part is located farther from the medium facing surface than is the coupling part, and is magnetically connected to the main pole. The second coil is located on the front side in the direction of travel of the recording medium relative to the main pole and wound around the core part.
摘要翻译：磁头包括第一和第二线圈，主极，写入屏蔽，返回路径部分和核心部分。返回路径部包括磁性地连接到写入屏蔽的轭部，以及远离介质面的表面并且将轭部和主极彼此磁耦合的耦合部。第一线圈位于记录介质相对于主极的行进方向的前侧，并缠绕在联接部上。核心部分位于与介质相对表面比耦合部分更远的位置，并且与主极磁性连接。第二线圈位于记录介质相对于主极的行进方向的前侧，并缠绕在芯部上。

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