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    • 88. 发明授权
    • Thermal CVD synthesis of nanostructures
    • 纳米结构的热CVD合成
    • US07241479B2
    • 2007-07-10
    • US10646360
    • 2003-08-22
    • Apparao M. RaoRahul Rao
    • Apparao M. RaoRahul Rao
    • C23C16/00B05D1/18
    • B82Y30/00C30B25/00C30B29/605Y10T428/31678
    • The present invention is generally directed to a novel process for the production of nanowires and nanobelts and the novel nanostructures which can be produced according to the disclosed processes. The process can be carried out at ambient pressure and includes locating a metal in a reaction chamber, heating the chamber to a temperature at which the metal becomes molten, and flowing a vapor-phase reactant through the chamber. The vapor-phase reactant and the molten metal can react through a thermal CVD process, and nanostructures can form on the surface of the molten metal. Dimensions of the nanostructures can be controlled by reaction temperature.
    • 本发明一般涉及用于生产纳米线和​​纳米带的新方法和可以根据所公开的方法制备的新型纳米结构。 该方法可以在环境压力下进行,并且包括将金属定位在反应室中,将该室加热至金属熔化的温度,并使气相反应物流过该室。 气相反应物和熔融金属可以通过热CVD工艺反应,并且可以在熔融金属的表面上形成纳米结构。 纳米结构的尺寸可以通过反应温度来控制。