专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US4532002A Multilayer planarizing structure for lift-off technique 失效
标题翻译：用于剥离技术的多层平面结构
公开(公告)号：US4532002A
公开(公告)日：1985-07-30
申请号：US598745
申请日：1984-04-10
申请人： Lawrence K. White
发明人： Lawrence K. White
IPC分类号： G03F7/09 , H01L21/027 , B44C1/22 , B29C17/08 , C03C15/00 , C03C25/06
CPC分类号： G03F7/094 , H01L21/0272
摘要： An improved method of forming a patterned layer of metallization on a substrate having topographical features is provided. A layer of a polymeric lift-off material is initially spin-coated onto the substrate, and a layer of a polymeric planarizing material spin-coated thereover. The dry etch rate of the lift-off layer is at least 1.2 times faster than that of the planarizing layer thereby forming a reverse slope wall profile in openings etched through both layers. A patterned hardmask layer is suitably used to dry etch the planarizing and lift-off layers, preferably in an oxygen-containing plasma. A layer of metallization is then deposited thereon. The metal in the openings is discontinuous from that deposited over the hardmask because of the reverse slope wall profile of the openings in the planarizing layers. The structure is then contacted with an organic solvent which penetrates to the base of the lift-off layer, again due to the reverse slope wall profile. The entire structure can thereupon be lifted from the substrate leaving the patterned metallization.
摘要翻译：提供了一种在具有形貌特征的基底上形成图案化金属化层的改进方法。首先将一层聚合物剥离材料旋涂在基材上，并在其上旋涂一层聚合物平面化材料。剥离层的干蚀刻速率比平坦化层的干蚀刻速率快至少1.2倍，从而在通过两层蚀刻的开口中形成反向倾斜壁轮廓。图案化的硬掩模层适合用于干燥蚀刻平坦化和剥离层，优选地在含氧等离子体中蚀刻。然后在其上沉积金属化层。开口中的金属由于平坦化层中的开口的反向倾斜壁轮廓而与沉积在硬掩模上的金属不连续。然后将结构与渗透到剥离层的底部的有机溶剂接触，这又是由于反向倾斜壁轮廓。整个结构可以随后从衬底上提起留下图案化的金属化。

82. 发明授权

US4528063A Method for refinishing rigid data storage discs 失效
标题翻译：修补刚性数据存储盘的方法
公开(公告)号：US4528063A
公开(公告)日：1985-07-09
申请号：US620961
申请日：1984-06-15
申请人： John E. Lawrence , Lloyd L. Barnes, Jr.
发明人： John E. Lawrence , Lloyd L. Barnes, Jr.
IPC分类号： C23F1/44 , C23G1/12 , G11B5/84 , C23F1/02 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： C23F1/44 , C23G1/125 , G11B5/84
摘要： A method for refinishing rigid data storage discs for recoating including the steps of removing a magnetically alterable coating and its sub-interfacing material from rigid data storage discs to expose disc substrates, inspecting the substrate for surface discontinuities, measuring the thickness and flatness of the substrates, resurfacing the surfaces of the substrates to remove surface unevenness and surface discontinuities, polishing the surfaces of the substrates to produce a visually mar-free flat substrates, and rinsing and drying the substrate before recoating.
摘要翻译：一种用于重新涂覆用于重新涂覆的刚性数据存储盘的方法，包括从刚性数据存储盘移除可磁性改变的涂层及其子接口材料以暴露盘基板，检查基板的表面不连续性，测量基板的厚度和平坦度的步骤重新涂覆基材的表面以去除表面不均匀性和表面不连续性，抛光基材表面以产生视觉上无水平的基材，以及在重新涂覆之前漂洗和干燥基材。

83. 发明授权

US4523976A Method for forming semiconductor devices 失效
标题翻译：半导体器件形成方法
公开(公告)号：US4523976A
公开(公告)日：1985-06-18
申请号：US627264
申请日：1984-07-02
申请人： Yefim Bukhman
发明人： Yefim Bukhman
IPC分类号： H01L21/311 , H01L21/312 , H01L21/768 , B44C1/22 , C03C15/00 , C03C25/06 , B29C17/08
CPC分类号： H01L21/76804 , H01L21/31138 , H01L21/312
摘要： A method is disclosed for forming openings in polyimide layers and for thereby forming semiconductor devices. The method allows for the forming of openings having tapered side walls and precise dimensional control. First and second layers of polyimide are sequentially formed on a surface. The first layer, in contact with the surface, is fully cured while the second layer is only partially cured. Overlying the second layer is a masking layer which can alternatively be an inorganic material or a resist material. A pattern is formed in the masking layer to expose portions of the upper polyimide layer. The pattern includes openings of predetermined size having a precise critical dimension. Using the patterned masking layer as an etch mask the upper layer of polyimide is isotropically etched in an etchent which etches the partially cured polyimide but which does not etch the fully cured underlying polyimide. The underlying polyimide layer is then anisotropically etched using the patterned masking layer as an etch mask to form openings in the cured polyimide layer having the same critical dimensions as in the masking layer pattern. The masking layer is then removed and the second polyimide layer is fully cured.
摘要翻译：公开了一种用于在聚酰亚胺层中形成开口并由此形成半导体器件的方法。该方法允许形成具有锥形侧壁和精确尺寸控制的开口。在表面上依次形成第一和第二层聚酰亚胺。与表面接触的第一层完全固化，而第二层仅部分固化。覆盖第二层是掩模层，其可以替代地是无机材料或抗蚀剂材料。在掩模层中形成图案以暴露上部聚酰亚胺层的部分。该图案包括具有精确临界尺寸的预定尺寸的开口。使用图案化掩模层作为蚀刻掩模，在蚀刻部分固化的聚酰亚胺但不蚀刻完全固化的下面的聚酰亚胺的等离子体中各向同性蚀刻聚酰亚胺的上层。然后使用图案化掩模层作为蚀刻掩模对下面的聚酰亚胺层进行各向异性蚀刻，以在具有与掩模层图案相同的临界尺寸的固化聚酰亚胺层中形成开口。然后去除掩模层，第二聚酰亚胺层完全固化。

84. 发明授权

US4523973A Method and apparatus for automated chemical milling of compound curved surfaces 失效
标题翻译：复合曲面自动化学铣削的方法和装置
公开(公告)号：US4523973A
公开(公告)日：1985-06-18
申请号：US542790
申请日：1983-10-17
申请人： Carl Nelson
发明人： Carl Nelson
IPC分类号： B44C1/22 , C23F1/04 , C23F1/08 , C23F1/02 , C03C15/00 , C03C25/06
CPC分类号： B44C1/228 , B44C1/227 , C23F1/04 , C23F1/08
摘要： A method and apparatus for chemically milling large sheet metal workpieces and the like to uniform wall thickness in which all wall thickness measurements and all cutting of the protective maskant which is applied to the surfaces of the workpiece is accomplished automatically and with extreme precision through the use of a computer directed robot.
摘要翻译：一种用于化学研磨大型金属片材等的均匀壁厚的方法和装置，其中所有的壁厚测量和施加到工件表面上的保护掩模的所有切割都通过使用自动地和极其精确地完成的计算机定向机器人。

85. 发明授权

US4523971A Programmable ion beam patterning system 失效
标题翻译：可编程离子束图案化系统
公开(公告)号：US4523971A
公开(公告)日：1985-06-18
申请号：US626097
申请日：1984-06-28
申请人： Jerome J. Cuomo , James M. E. Harper , Harold R. Kaufman , James L. Speidell
发明人： Jerome J. Cuomo , James M. E. Harper , Harold R. Kaufman , James L. Speidell
IPC分类号： H01J37/08 , B23K15/00 , C23C14/46 , H01J37/09 , H01J37/30 , H01J37/305 , H01J37/317 , H01L21/265 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： C23C14/46 , H01J37/09 , H01J37/3053 , H01J37/3178
摘要： This ion beam system provides an ion beam pattern which is produced without the need for a mask. A programmable grid is used in combination with an ion beam source, where the apertures of the programmable grid can have electrical potentials associated therewith which either extract ions or impede the movement of ions through the apertures. Depending upon the electrical biasing provided to each of the apertures of the grid, different patterns of ions can be extracted through the grid. By changing the electrical bias at different locations on the programmable grid, these different patterns are produced. The patterns can be used for many applications, including patterned deposition, patterned etching, and patterned treatment of surfaces.
摘要翻译：该离子束系统提供在不需要掩模的情况下产生的离子束图案。可编程栅格与离子束源组合使用，其中可编程栅格的孔可以具有与其相关联的电势，其提取离子或阻止离子通过孔的移动。取决于提供给栅格的每个孔的电偏压，可以通过栅格提取不同的离子图案。通过改变可编程网格上不同位置的电气偏压，产生这些不同的图案。这些图案可以用于许多应用，包括图案化沉积，图案化蚀刻和表面图案化处理。

86. 发明授权

US4522681A Method for tapered dry etching 失效
标题翻译：锥形干蚀刻方法
公开(公告)号：US4522681A
公开(公告)日：1985-06-11
申请号：US602873
申请日：1984-04-23
申请人： Bernard Gorowitz , Richard J. Saia
发明人： Bernard Gorowitz , Richard J. Saia
IPC分类号： H01L21/302 , G03F7/09 , H01L21/3065 , H01L21/311 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/31116 , G03F7/094 , H01L21/31144
摘要： Holes in substrates are produced by a photolithography-plasma dry etching method employing a positive photoresist mask such as poly(methyl methacrylate) which is capable of being isotropically eroded by plasma action. The result is simultaneous anisotropic etching of the substrate and isotropic erosion of the mask, producing tapered holes.
摘要翻译：通过使用能够通过等离子体作用各向同性地侵蚀的聚（甲基丙烯酸甲酯）等正性光致抗蚀剂掩模的光刻等离子体干蚀刻方法来制造衬底中的孔。结果是基板的同时各向异性蚀刻和掩模的各向同性腐蚀，产生锥形孔。

87. 发明授权

US4517045A Apparatus for formation of packaging material 失效
标题翻译：用于形成包装材料的装置
公开(公告)号：US4517045A
公开(公告)日：1985-05-14
申请号：US489070
申请日：1983-06-13
申请人： Donald E. Beckett
发明人： Donald E. Beckett
IPC分类号： B05D1/32 , B32B15/08 , B41M1/28 , B41M3/00 , B44C1/04 , B44C1/14 , B44C1/22 , B65D65/18 , C23F1/02 , H05K1/00 , H05K3/06 , C03C15/00 , C03C25/06
CPC分类号： B41M3/00 , B05D1/322 , B32B15/08 , B41M1/28 , B44C1/04 , B44C1/14 , B44C1/227 , B65D65/18 , C23F1/02 , B05D2252/02 , H05K1/0393 , H05K3/068
摘要： A pattern is formed in rapid and continuous manner on aluminized polymer film by printing the aluminum surface with a sodium hydroxide-resistant material, which may be pigmented, contacting the non-overprinted areas of the aluminum with hot aqueous sodium hydroxide solution to dissolve the aluminum rapidly from the base polymeric film and leave unaffected the overprinted areas, and washing the spent sodium hydroxide solution from the film. The steps are carried on a continuous web of aluminized film and result in pattern of opaque areas and transparent areas, corresponding to the overprinted and non-overprinted areas of the film.
摘要翻译：在铝化聚合物膜上形成图案，通过用耐氢氧化钠的材料印刷铝表面，该材料可能着色，使铝与非氢化氢氧化钠水溶液接触，以使铝溶解铝快速地从基础聚合物膜离开并且不影响覆盖区域，并且从膜中洗涤废氢氧化钠溶液。这些步骤承载在连续的镀铝膜网上，并且导致对应于膜的套印和非套印区域的不透明区域和透明区域的图案。

88. 发明授权

US4508591A Polymethyl methacrylate compatible silicon dioxide complexing agent 失效
标题翻译：聚甲基丙烯酸甲酯相容的二氧化硅络合剂
公开(公告)号：US4508591A
公开(公告)日：1985-04-02
申请号：US587348
申请日：1984-03-08
申请人： Keith G. Bartlett , Mary A. Caolo
发明人： Keith G. Bartlett , Mary A. Caolo
IPC分类号： C03C15/00 , H01L21/311 , B44C1/22 , C03C25/06
CPC分类号： H01L21/31111 , C03C15/00 , Y10S438/948
摘要： An etching solution for the dissolution of silicon dioxide through a portable conformable mask, with PMMA as the etch stop layer, has been developed which eliminates resist lifting and non-uniform lateral etching, thereby providing the improved oxide edge definitions required for 1 micron line geometries in VLSI chips.
摘要翻译：已经开发了通过具有PMMA作为蚀刻停止层的便携式适形掩模溶解二氧化硅的蚀刻溶液，其消除了抗蚀剂提升和不均匀的横向蚀刻，从而提供了1微米线几何形状所需的改进的氧化物边界定义在VLSI芯片中。

89. 发明授权

US4507167A Plate changing apparatus for offset printing machines 失效
标题翻译：胶版印刷机更换装置
公开(公告)号：US4507167A
公开(公告)日：1985-03-26
申请号：US545247
申请日：1983-10-25
申请人： Hans-Joachim Jahme , Harry Bracke
发明人： Hans-Joachim Jahme , Harry Bracke
IPC分类号： B41F27/12 , B41L29/16 , C23F1/02 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： B41L29/16
摘要： Plate changing apparatus for use with offset printing machines, including a plate stacking table, plate individualizing means for sequentially withdrawing only the lowermost plate from the stacking table, and plate transporting and guiding means to guide the freshly withdrawn plate to a form cylinder of the printing machine after having passed through a fixing bath. The apparatus includes means to pass the separated plate through a fixing bath prior to its deposit on the form cylinder and a depository for used plates removed from the form cylinder. The novelty resides in the individualizing means including a rotatable vacuum roll disposed adjacent a partly open bottom surface of the plate stacking table or container or tray holding the plates so that it can engage the lowermost plate. The vacuum roll has its shaft mounted in parallel with the leading edge of the plate stack for linear displacement in parallel with the bottom stack surface. A fixing bath container is disposed directly below the plate stack and the individualizing means and adjacent the form cylinder. This arrangement results in a particularly compact construction while enabling the plates to be handled carefully.
摘要翻译：用于胶版印刷机的换板装置，包括板堆叠台，用于从堆叠台顺序取出最下板的板个别化装置，以及板输送和引导装置，用于将新取出的板引导至印版的成型筒机器经过定影浴后。该装置包括在分离板沉积在成型滚筒上之前将分离的板通过定影槽的装置，以及从成型滚筒移除的用过的板的储存器。新颖性在于个性化装置，其包括可旋转的真空辊，其设置在板堆叠台的部分开口的底表面或容纳板的容器或托盘附近，使得其能够接合最下面的板。真空辊的轴与板堆的前缘平行地安装，用于与底部堆叠表面平行的线性位移。定影槽容器设置在板堆和个体化装置的正下方并邻近成形缸。这种布置导致特别紧凑的结构，同时能够小心地处理板。

90. 发明授权

US4497686A Fine-line die and method of making same 失效
标题翻译：细线模及其制作方法
公开(公告)号：US4497686A
公开(公告)日：1985-02-05
申请号：US590722
申请日：1984-03-16
申请人： Walter Weglin
发明人： Walter Weglin
IPC分类号： G03F7/00 , B23P15/40 , C23F1/00 , C23F1/04 , H05K3/04 , C23F1/02 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： B23P15/406 , B23P15/24 , C23F1/04 , H05K3/041 , H05K2203/0108 , Y10T156/1313
摘要： A method for fabricating a precision die having a line-and-space array by chemical milling the working face of an etchable workpiece to form a plurality of raised die elements separated and bounded by a plurality of cavities, including separating cavities and background cavities, is comprised of the steps of forming an etchant-resistant surface pattern of pockets penetrating slightly into the working face of the workpiece and at least partially overlapping and substantially conforming to the spatial disposition of a desired configuration for the die elements to be produced, and then selectively etching the workpiece in etchant-active regions intermediate and outwardly bounded by the pockets to undercut the same and form at least the conformation of the separating/background cavities within the working face. The step of forming the etchant-resistant pattern of pockets is preferably a two-stage procedure comprised of first chemical milling shallow pockets in the workpiece in the desired pattern and then loading those pockets with an etchant-resistant fill extending in an oversized pattern with respect to the surface width dimension of the die elements. The workpiece is selectively milled in the etchant-active regions to form cavity precursors having a surface width dimension approximately equal to the desired width for the spaces in the finished die; followed by selectively milling the regions intermediate those cavities to establish raised die elements conforming to the line array of the finished die.
摘要翻译：一种通过化学铣削可蚀刻工件的工作面以形成多个由包括分离空腔和背景腔的多个空腔分隔和界定的凸起模具元件来制造具有线间距阵列的精密模具的方法，包括以下步骤：形成稍微渗透到工件的工作面中的凹穴的耐腐蚀表面图案，并且至少部分地重叠并且基本上符合待生产的模具元件的期望构型的空间布置，然后选择性地在由凹穴中间和向外限定的蚀刻剂活性区域中蚀刻工件以对其进行切割，并至少形成工作面内的分离/背景腔的构型。形成凹穴的耐蚀刻剂图案的步骤优选是两阶段程序，其包括以期望的图案在工件中首先化学研磨浅凹坑，然后以相对于超大型图案延伸的耐蚀刻填充物填充这些凹穴到模具元件的表面宽度尺寸。在蚀刻剂活性区域中选择性地研磨工件以形成具有近似等于成品模具中空间的所需宽度的表面宽度尺寸的空腔前体; 随后选择性地研磨这些空腔之间的区域以建立符合成品模具的线阵列的凸起的模具元件。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式