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1. 发明申请

US20170317247A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING GANG BONDING AND SEMICONDUCTOR DEVICE FABRICATED BY THE SAME 审中-公开
公开(公告)号：US20170317247A1
公开(公告)日：2017-11-02
申请号：US15646099
申请日：2017-07-11
申请人： Chung Hoon LEE , Dae Sung KAL , Ki Bum NAM
发明人： Chung Hoon LEE , Dae Sung KAL , Ki Bum NAM
IPC分类号： H01L33/50 , H01L33/44 , H01L23/00 , H01L33/00 , H01L23/498 , H01L33/36 , H01L33/48
CPC分类号： H01L33/507 , H01L23/49805 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/16 , H01L24/27 , H01L24/32 , H01L24/33 , H01L24/83 , H01L24/94 , H01L33/005 , H01L33/0079 , H01L33/0095 , H01L33/36 , H01L33/44 , H01L33/486 , H01L33/50 , H01L2224/04026 , H01L2224/05073 , H01L2224/05124 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05171 , H01L2224/05553 , H01L2224/05571 , H01L2224/06151 , H01L2224/11462 , H01L2224/16013 , H01L2224/16057 , H01L2224/16151 , H01L2224/27462 , H01L2224/32238 , H01L2224/325 , H01L2224/33151 , H01L2224/81893 , H01L2224/83447 , H01L2224/83455 , H01L2224/83893 , H01L2224/94 , H01L2224/97 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/12041 , H01L2924/12042 , H01L2924/15787 , H01L2933/0033 , H01L2924/00012 , H01L2924/00014 , H01L2224/81 , H01L2924/00
摘要： A semiconductor device including a first lead electrode and a second lead electrode; a semiconductor stack structure disposed on the member, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a plating layer configured to bond the semiconductor stack structure to the member; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

2. 发明授权

US09203007B2 Light emitting diode assembly 有权
标题翻译：发光二极管组件
公开(公告)号：US09203007B2
公开(公告)日：2015-12-01
申请号：US14123393
申请日：2012-05-25
申请人： Chung Hoon Lee , Dae Sung Kal , Won Cheol Seo , Young Eun Yang
发明人： Chung Hoon Lee , Dae Sung Kal , Won Cheol Seo , Young Eun Yang
IPC分类号： H01L33/64 , H01L27/15 , H01L25/075 , F21K99/00
CPC分类号： H01L33/64 , F21K9/23 , H01L25/0753 , H01L27/15 , H01L33/642 , H01L33/647 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/00
摘要： Disclosed is a light emitting diode assembly. The light emitting diode assembly comprised: a red light emitting diode chip; a short-wavelength light emitting diode chip emitting a light having a wavelength relatively shorter than that of a light emitted from the red light emitting diode chip; a first heat-dispersion member for dispersing most of the heat generated in the short wavelength light emitting diode chip; and a second heat-dispersion member for dispersing most of the heat generated in the red light emitting diode chip. Further, the second heat-dispersion member has heat dispersion performance relatively superior to that of the first heat dispersion member. Thus, spectrum movement in the red light emitted from the red light emitting diode chip may be prevented so as to prevent a color-coordinate transformation during the operation time of same.
摘要翻译：公开了一种发光二极管组件。发光二极管组件包括：红色发光二极管芯片; 发射波长比从红色发光二极管芯片发射的光的波长相对更短的光的短波长发光二极管芯片; 用于分散在短波长发光二极管芯片中产生的大部分热量的第一散热构件; 以及用于分散红色发光二极管芯片中产生的大部分热量的第二散热构件。此外，第二散热构件的散热性能比第一散热构件的热分散性能要好。因此，可以防止从红色发光二极管芯片发射的红色光中的光谱运动，以防止在操作时间相同的色坐标变换。

3. 发明授权

US09070851B2 Wafer-level light emitting diode package and method of fabricating the same 有权
公开(公告)号：US09070851B2
公开(公告)日：2015-06-30
申请号：US13194317
申请日：2011-07-29
申请人： Won Cheol Seo , Dae Sung Kal
发明人： Won Cheol Seo , Dae Sung Kal
IPC分类号： H01L33/60 , H01L33/62 , H01L27/15 , H01L33/10 , H01L33/50 , H01L33/00 , H01L33/20 , H01L33/38 , H01L33/46 , H01L33/48
CPC分类号： H01L33/56 , H01L27/15 , H01L27/153 , H01L33/007 , H01L33/0079 , H01L33/0095 , H01L33/06 , H01L33/10 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/50 , H01L33/502 , H01L33/505 , H01L33/507 , H01L33/58 , H01L33/62 , H01L33/642 , H01L33/647 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2933/0075 , H01L2924/00
摘要： Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.

4. 发明授权

US08598775B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08598775B2
公开(公告)日：2013-12-03
申请号：US12514761
申请日：2007-12-07
申请人： Dae Won Kim , Do Hyung Kim , Dae Sung Kal , In Kyu Park
发明人： Dae Won Kim , Do Hyung Kim , Dae Sung Kal , In Kyu Park
IPC分类号： H01J1/62
CPC分类号： H01L25/0753 , F21K9/00 , H01L27/153 , H01L2224/48137 , H01L2224/49107
摘要： The disclosed light emitting device comprises at least one first light emitting element including at least one light emitting chip for emitting light having a wavelength of 400 to 500 nm and a phosphor; and at least one second light emitting element disposed adjacent to the first light emitting element to emit light having a wavelength of 560 to 880 nm.
摘要翻译：所公开的发光器件包括至少一个第一发光元件，其包括用于发射波长为400〜500nm的光的至少一个发光芯片和荧光体; 以及与第一发光元件相邻设置的至少一个第二发光元件，以发射波长为560至880nm的光。

5. 发明授权

US08338836B2 Light emitting device for AC operation 有权
标题翻译：用于交流操作的发光装置
公开(公告)号：US08338836B2
公开(公告)日：2012-12-25
申请号：US12513803
申请日：2007-09-05
申请人： Keon Young Lee , Dae Sung Kal
发明人： Keon Young Lee , Dae Sung Kal
IPC分类号： H01L29/18
CPC分类号： H01L25/0753 , H01L33/62 , H01L2924/0002 , H05B33/0803 , H05B33/0821 , H05B33/089 , Y02B20/341 , H01L2924/00
摘要： An AC light emitting device, in which a plurality of light emitting cells formed on a substrate are flip-bonded to a submount to be driven under an AC power source is disclosed. The light emitting device comprises a first serial array of light emitting cells, and a second serial array of light emitting cells, wherein the second serial array is connected in reverse parallel to the first serial array. Meanwhile, bonding patterns are formed on a submount substrate, and the light emitting cells of the first and second serial arrays are flip-bonded to the bonding patterns. Further, node connecting patterns are formed on the submount substrate, and connect the bonding patterns such that nodes corresponding to each other provided in the first and second serial arrays are electrically connected to each other. Accordingly, it is possible to provide an AC light emitting device which can prevent overvoltage from being applied to light emitting cells in the array to which reverse voltage is applied by bonding patterns and node connecting patterns formed on a submount substrate, thereby protecting the light emitting cells.
摘要翻译：公开了一种AC发光器件，其中形成在衬底上的多个发光单元被翻转接合到在AC电源下被驱动的基座。发光器件包括发光单元的第一串联阵列和发光单元的第二串联阵列，其中第二串联阵列与第一串联阵列反向并联连接。同时，在基板上形成接合图案，并且第一和第二串联阵列的发光单元被翻转接合到接合图案。此外，节点连接图案形成在副安装座基板上，并且连接接合图案，使得设置在第一和第二串行阵列中的彼此相对应的节点彼此电连接。因此，可以提供一种交流发光装置，其可以通过结合形成在副安装座基板上的图案和节点连接图案来防止过电压施加到阵列中的发光单元，反射电压被施加到反向电压，由此保护发光细胞。

6. 发明申请

US20120139444A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20120139444A1
公开(公告)日：2012-06-07
申请号：US13151943
申请日：2011-06-02
申请人： Dae Won KIM , Do Hyung KIM , Dae Sung KAL , In Kyu PARK
发明人： Dae Won KIM , Do Hyung KIM , Dae Sung KAL , In Kyu PARK
IPC分类号： H05B37/02 , H01L27/15
CPC分类号： H01L25/0753 , F21K9/00 , H01L27/153 , H01L2224/48137 , H01L2224/49107
摘要： The disclosed light emitting device comprises at least one first light emitting element including at least one light emitting chip for emitting light having a wavelength of 400 to 500 nm and a phosphor; and at least one second light emitting element disposed adjacent to the first light emitting element to emit light having a wavelength of 560 to 880 nm.
摘要翻译：所公开的发光器件包括至少一个第一发光元件，其包括至少一个用于发射波长为400至500nm的光的发光芯片和荧光体; 以及与第一发光元件相邻设置的至少一个第二发光元件，以发射波长为560至880nm的光。

7. 发明授权

US08154008B2 Light emitting diode with improved structure 有权
标题翻译：具有改进结构的发光二极管
公开(公告)号：US08154008B2
公开(公告)日：2012-04-10
申请号：US12178758
申请日：2008-07-24
申请人： Chung Hoon Lee , Ki Bum Nam , Dae Sung Kal
发明人： Chung Hoon Lee , Ki Bum Nam , Dae Sung Kal
IPC分类号： H01L29/06
CPC分类号： H01L33/32 , H01L33/06 , H01L33/16
摘要： A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.
摘要翻译：用于最小化有源区中的晶体缺陷并提高有源区中的电子和空穴的复合效率的发光二极管（LED）包括在非极性衬底上生长的非极性GaN基半导体层。半导体层包括非极性N型半导体层，非极性P型半导体层和位于N型半导体层和P型半导体层之间的非极性有源区。非极性有源区层包括阱层和具有超晶格结构的势垒层。

8. 发明申请

US20110222285A1 LIGHT EMITTING DEVICE HAVING A PLURALITY OF LIGHT EMITTING CELLS 有权
标题翻译：具有多个发光细胞的发光装置
公开(公告)号：US20110222285A1
公开(公告)日：2011-09-15
申请号：US13009284
申请日：2011-01-19
申请人： Kyung Hee YE , Dae Sung Kal , Won Cheol Seo , Young Eun Yang , Sum Geun Lee
发明人： Kyung Hee YE , Dae Sung Kal , Won Cheol Seo , Young Eun Yang , Sum Geun Lee
IPC分类号： F21S4/00
CPC分类号： H01L33/08 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/0002 , H05B33/0821 , H01L2924/00
摘要： The present invention relates to a light emitting device including at least three pairs of half-wave light emitting units, each pair including a terminal of a first half-wave light emitting unit connected to a terminal of a second half-wave light emitting unit, the terminals having the same polarity, a polarity of the connected terminals of one half-wave light emitting unit pair being opposite to the polarity of the connected terminals of an adjacent half-wave light emitting unit. The light emitting device also includes at least two full-wave light emitting units each connected to adjacent pairs of half-wave light emitting units. The half-wave light emitting units and the full-wave light emitting units each have at least one light emitting cell, the half-wave light emitting units each have a first terminal and a second terminal, the full-wave light emitting units each have a third terminal having the same polarity as the first terminal and a fourth terminal having the same polarity as the second terminal, and the third terminal of each full-wave light emitting unit being connected to the second terminal of adjacent half-wave light emitting units and the fourth terminal of each half-wave light emitting unit being connected to the first terminal of adjacent half-wave light emitting units.
摘要翻译：本发明涉及一种包括至少三对半波发光单元的发光器件，每一对包括连接到第二半波发光单元的端子的第一半波发光单元的端子，具有相同极性的端子，一个半波发光单元对的连接端子的极性与相邻半波发光单元的连接端子的极性相反。发光器件还包括至少两个全波发光单元，每个全波发光单元各自连接到相邻的半波发光单元对。半波发光单元和全波发光单元各自具有至少一个发光单元，半波发光单元各自具有第一端子和第二端子，全波发光单元各自具有具有与第一端子极性相同的第三端子和与第二端子具有相同极性的第四端子，并且每个全波发光单元的第三端子连接到相邻半波发射单元的第二端子并且每个半波发光单元的第四端子连接到相邻的半波发光单元的第一端子。

9. 发明申请

US20110062459A1 AC LIGHT EMITTING DIODE HAVING FULL-WAVE LIGHT EMITTING CELL AND HALF-WAVE LIGHT EMITTING CELL 有权
标题翻译：具有全波发光单元和半波发光单元的交流发光二极管
公开(公告)号：US20110062459A1
公开(公告)日：2011-03-17
申请号：US12882406
申请日：2010-09-15
申请人： Dae Sung KAL , Won Cheol SEO , Jang Woo LEE , Jin Cheol SHIN , Jong Kyu KIM , Sang Ki JIN , So Ra LEE
发明人： Dae Sung KAL , Won Cheol SEO , Jang Woo LEE , Jin Cheol SHIN , Jong Kyu KIM , Sang Ki JIN , So Ra LEE
IPC分类号： H01L33/08
CPC分类号： H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses an alternating current (AC) light emitting diode (LED) having half-wave light emitting cells and full-wave light emitting cells. The AC LED has a plurality of light emitting cells electrically connected between bonding pads on a single substrate. The AC LED includes a first row of half-wave light emitting cells each having an anode terminal and a cathode terminal, a second row of full-wave light emitting cells each having an anode terminal and a cathode terminal, and a third row of half-wave light emitting cells each having an anode terminal and a cathode terminal. In the AC LED, the second row is arranged between the first row and the third row, and the third row includes a pair of light emitting cells that share a cathode terminal with each other. The cathode terminal shared by the pair of light emitting cells in the third row is electrically connected to the anode terminal of a corresponding light emitting cell of the half-wave light emitting cells in the first row through a conductor that is electrically insulated from the full-wave light emitting cells in the second row.
摘要翻译：本发明公开了一种具有半波发光单元和全波发光单元的交流（AC）发光二极管（LED）。 AC LED具有电连接在单个基板上的焊盘之间的多个发光单元。 AC LED包括具有阳极端子和阴极端子的第一排半波发光单元，具有阳极端子和阴极端子的第二排全波发光单元，以及第三排半波发光单元每个具有阳极端子和阴极端子的发光单元。在AC LED中，第二行布置在第一行和第三行之间，第三行包括彼此共享阴极端子的一对发光单元。由第三行中的一对发光单元共享的阴极端子通过与整体电绝缘的导体电连接到第一行中的半波发光单元的对应的发光单元的阳极端子 - 第二排发光单元。

10. 发明授权

US07772588B1 Light emitting device with improved internal quantum efficiency 有权
标题翻译：具有提高的内部量子效率的发光器件
公开(公告)号：US07772588B1
公开(公告)日：2010-08-10
申请号：US12616610
申请日：2009-11-11
申请人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Ki Bum Nam
发明人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Ki Bum Nam
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/1053 , H01S5/341 , H01S5/3412
摘要： A light emitting device can be used for light emitting diodes and laser diodes. The light emitting device includes a substrate, a first semiconductor layer on the substrate, a second semiconductor layer on the first semiconductor layer, and a multi-quantum well structure including at least one well layer and at least one barrier layer between the first and second semiconductor layers. A carrier trap portion is formed in at least one layer within the multi-quantum well structure. The at least one carrier trap portion is distributed at a higher density than a dislocation density of the layer including the carrier trap portion, and the carrier trap portion has a size of 1˜10 nm.
摘要翻译：发光器件可用于发光二极管和激光二极管。发光器件包括衬底，衬底上的第一半导体层，第一半导体层上的第二半导体层，以及多量子阱结构，其包括至少一个阱层和在第一和第二阱之间的至少一个势垒层半导体层。载流子捕获部分形成在多量子阱结构内的至少一层中。所述至少一个载流子捕获部以比包含所述载流子捕获部的层的位错密度高的密度分布，所述载流子捕获部的尺寸为1〜10nm。

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