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    • 3. 发明申请
    • PLASMA PROCESSING APPARATUS
    • 等离子体加工设备
    • US20090183833A1
    • 2009-07-23
    • US12414443
    • 2009-03-30
    • Do-Hyeong KIM
    • Do-Hyeong KIM
    • C23F1/08C23C16/54
    • C23C16/507C23C16/452H01J37/32357H01J37/32495H01J37/32623
    • A plasma processing apparatus comprising: a process chamber for defining a plasma processing space in which a substrate holder for mounting a substrate thereon is installed; a plasma chamber in communication with an upper portion of the process chamber to generate and inject plasma into the plasma processing space such that the substrate is processed; a screen interposed between the process chamber and the plasma chamber to block plasma ions from being injected from the plasma chamber; and an ion trap for protecting the surface of the substrate from damage due to the injected plasma ion.
    • 一种等离子体处理装置,包括:用于限定等离子体处理空间的处理室,其中安装用于安装其上的基板的基板保持器; 等离子体室,与处理室的上部连通,以产生等离子体并将等离子体注入到等离子体处理空间中,使得处理基板; 介于所述处理室和所述等离子体室之间以屏蔽等离子体离子从所述等离子体室注入的屏幕; 以及用于保护衬底的表面的离子阱不会由于注入的等离子体离子而损坏。
    • 7. 发明申请
    • Plasma processing apparatus
    • 等离子体处理装置
    • US20060102286A1
    • 2006-05-18
    • US11270704
    • 2005-11-08
    • Do-Hyeong Kim
    • Do-Hyeong Kim
    • C23F1/00C23C16/00
    • C23C16/507C23C16/452H01J37/32357H01J37/32495H01J37/32623
    • A plasma processing apparatus comprising: a process chamber for defining a plasma processing space in which a substrate holder for mounting a substrate thereon is installed; a plasma chamber in communication with an upper portion of the process chamber to generate and inject plasma into the plasma processing space such that the substrate is processed; a screen interposed between the process chamber and the plasma chamber to block plasma ions from being injected from the plasma chamber; and an ion trap for protecting the surface of the substrate from damage due to the injected plasma ion.
    • 一种等离子体处理装置,包括:用于限定等离子体处理空间的处理室,其中安装用于安装其上的基板的基板保持器; 等离子体室,与处理室的上部连通,以产生等离子体并将等离子体注入到等离子体处理空间中,使得处理基板; 介于所述处理室和所述等离子体室之间以屏蔽等离子体离子从所述等离子体室注入的屏幕; 以及用于保护衬底的表面的离子阱不会由于注入的等离子体离子而损坏。
    • 8. 发明授权
    • Multiple reaction chamber system having wafer recognition system and method for processing wafer using same
    • 具有晶片识别系统的多反应室系统及使用其的晶片处理方法
    • US06236903B1
    • 2001-05-22
    • US09160093
    • 1998-09-25
    • Do-hyeong KimTae-ryong KimByeung-wook ChoiKwang-jin Jung
    • Do-hyeong KimTae-ryong KimByeung-wook ChoiKwang-jin Jung
    • G06F1900
    • H01L21/67294G06K9/00Y10S414/136
    • A multiple reaction chamber system includes a transfer chamber, a load lock chamber connected to the transfer chamber, and a plurality of reaction chambers connected to the transfer chamber. An alignment chamber is connected to the transfer chamber, disposed along a path of wafer transfer from the load lock chamber to the plurality of reaction chambers, and includes a wafer aligner. A wafer recognition, disposed along a post-aligner portion of the path of wafer transfer system, recognizes an identification code of an individual wafer. A controlling system is in data communication with the wafer recognition system for selecting a selected chamber of the plurality of reaction chambers into which the individual wafer is to be transferred. Because individual wafers can be associated with each reaction chamber, a defective reaction chamber can be identified immediately and its use discontinued so that unproductive operations can be eliminated.
    • 多反应室系统包括传送室,连接到传送室的负载锁定室和连接到传送室的多个反应室。 对准室连接到传送室,沿着晶片从负载锁定室传递到多个反应室的路径设置,并且包括晶片对准器。 沿着晶片传送系统的路径的对准后部分布置的晶片识别识别单个晶片的识别码。 控制系统与晶片识别系统进行数据通信,用于选择要转移单个晶片的多个反应室的选定室。 因为单个晶片可以与每个反应室相关联,所以可以立即识别有缺陷的反应室,并且其使用停止,从而可以消除非生产性操作。