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1. 发明授权

US08968972B2 Photomask blank, process for production of photomask, and chromium-containing material film 有权
标题翻译：光掩模坯料，光掩模生产工艺和含铬材料膜
公开(公告)号：US08968972B2
公开(公告)日：2015-03-03
申请号：US13883850
申请日：2011-11-18
申请人： Hiroki Yoshikawa , Souichi Fukaya , Yukio Inazuki , Tsuneo Yamamoto , Hideo Nakagawa
发明人： Hiroki Yoshikawa , Souichi Fukaya , Yukio Inazuki , Tsuneo Yamamoto , Hideo Nakagawa
IPC分类号： G03F1/50 , C22C27/06 , G03F1/54 , G03F1/80 , C23C14/06 , G03F1/30
CPC分类号： G03F1/80 , B32B15/01 , C22C27/06 , C23C14/0641 , C23C14/0676 , G03F1/00 , G03F1/30 , G03F1/50 , G03F1/54
摘要： In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400° C. or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.
摘要翻译：在本发明的含铬材料膜中，添加元素，能够使元素和铬的混合物在400℃以下的温度下成为液相。使用这种含铬材料膜作为光掩模坯料的光学膜（例如遮光膜，蚀刻掩模膜或蚀刻阻挡膜）可以实现氯干蚀刻的改进，同时保持与常规含铬材料膜相同的光学特性等，从而提高图案形成精度。

2. 发明申请

US20090294726A1 ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE 有权
标题翻译：有机硅氧化物微粒及其制备方法，多孔膜成膜组合物，多孔膜及其形成方法及半导体器件
公开(公告)号：US20090294726A1
公开(公告)日：2009-12-03
申请号：US12472681
申请日：2009-05-27
申请人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： B32B1/00 , B29C35/08 , B29C35/02 , C09K3/00
CPC分类号： H01B3/10 , Y10T428/25 , Y10T428/259 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/31663
摘要： Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.
摘要翻译：提供可以形成具有期望作为高性能多孔绝缘膜的介电常数和机械强度并且具有优异的化学稳定性的多孔膜的有机氧化硅微粒及其制备方法。具体地说，提供了一种有机氧化硅微粒，其包含至少含有无机氧化硅或有机氧化硅的芯和至少含有有机氧化硅的壳，并且通过使用壳形成可水解硅烷在芯周围形成存在碱性催化剂; 其中构成核或壳的硅原子中，具有至少一个直接连接到碳原子上的键的硅原子数（T）与（Q）的硅原子数（Q）的比（T / Q）附着在氧原子上的四个键在壳中比在核中大; 并且其中所述成壳可水解硅烷至少包含具有两个或多个可水解基团的硅原子的可水解硅烷化合物，其通过碳链彼此结合，或通过在一些碳原子之间含有一个硅原子的碳链。

3. 发明申请

US20090042403A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体器件和半导体器件的方法
公开(公告)号：US20090042403A1
公开(公告)日：2009-02-12
申请号：US12244469
申请日：2008-10-02
申请人： Nobuo Aoi , Hideo Nakagawa
发明人： Nobuo Aoi , Hideo Nakagawa
IPC分类号： H01L21/31
CPC分类号： H01L21/76834 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/02304 , H01L21/31633 , H01L21/3185 , H01L21/76832 , H01L21/76849 , H01L21/76867 , H01L21/76886
摘要： A method for fabricating a semiconductor device includes the steps of forming a nitrogen-containing layer in an exposed portion of a copper interconnect formed in an insulating film provided on a substrate; and forming an interlayer insulating film on the nitrogen-containing layer through plasma CVD performed by using, as a material, an organic silicon compound having a siloxane (Si—O—Si) bond.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在设置在衬底上的绝缘膜中形成的铜互连件的暴露部分中形成含氮层; 通过使用具有硅氧烷（Si-O-Si）键的有机硅化合物作为材料，通过等离子体CVD在含氮层上形成层间绝缘膜。

4. 发明申请

US20080188076A1 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20080188076A1
公开(公告)日：2008-08-07
申请号：US11898140
申请日：2007-09-10
申请人： Yasunori Morinaga , Hideo Nakagawa
发明人： Yasunori Morinaga , Hideo Nakagawa
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： A trench is formed in an interlayer dielectric formed on a substrate, then a barrier seed film is formed to cover the interlayer dielectric and the inner walls of the trench, and copper is embedded in the trench by electrolytic plating using the barrier seed film as an electrode. The barrier seed film is a single-layer film made of an oxide or nitride of a refractory metal and contains a low-resistance metal other than copper.
摘要翻译：在形成在基板上的层间电介质中形成沟槽，然后形成阻挡种子膜以覆盖沟槽的层间电介质和内壁，并且通过电解电镀将铜嵌入沟槽中，使用阻挡种子膜作为电极。阻挡种子膜是由难熔金属的氧化物或氮化物制成的单层膜，并且含有铜以外的低电阻金属。

5. 发明授权

US07357961B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 有权
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US07357961B2
公开(公告)日：2008-04-15
申请号：US10819544
申请日：2004-04-07
申请人： Motoaki Iwabuchi , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Motoaki Iwabuchi , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： C08G77/06 , B05D3/02
CPC分类号： H01L21/3122 , C08G77/04 , C08G77/08 , C08G77/50 , C09D183/04 , C09D183/14 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695 , Y10T428/249953 , Y10T428/31663
摘要： Provided are a film formation composition which can produce a film having high strength and low dielectric constant, a method for manufacturing the same, a method for forming a porous film, a porous film, and a semiconductor device containing the porous film internally. More specifically provided is a film formation composition, comprising a polymer which is obtainable by hydrolysis and condensation of one or more hydrolysable silane compounds in the presence of anionic ion exchange resin, wherein the hydrolysable silane compound is selected from the group consisting of Formulae (1) and (2): (R1)aSi(R2)4-a (1) (R3)b(R5)3-bSi—R7—Si(R6)3-c(R4)c (2) wherein R1, R3 and R4 each independently represents a monovalent hydrocarbon group which may have a substituent; R2, R5 and R6 each independently represents a hydrolyzable group; R7 represents a divalent organic group; a represents an integer of 0 to 3; and b and c each represents an integer of 1 or 2.
摘要翻译：本发明提供一种成膜组合物，其可以制造具有高强度和低介电常数的膜，其制造方法，多孔膜形成方法，多孔膜和在内部含有多孔膜的半导体器件。更具体地提供了一种成膜组合物，其包含通过在阴离子离子交换树脂的存在下水解和缩合一种或多种可水解硅烷化合物而获得的聚合物，其中可水解硅烷化合物选自由式（1））和（2）：<？in-line-formula description =“In-line Formulas”end =“lead”？（R＆lt; 1＆gt;）＆lt; 4-a（1）<？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula- 公式描述=“在线公式”end =“lead”？>（R 3）3（R 5）3 -b-Si-R 7 -Si（R 6）3-c（R 4））（2）<？in-line-formula description =“In-line Formulas”end =“tail”？>其中R 1，R 3 R 4和R 4各自独立地表示可以具有取代基的一价烃基; R 2，R 5和R 6各自独立地表示可水解基团; R 7表示二价有机基团; a表示0〜3的整数， b和c各自表示1或2的整数。

6. 发明申请

US20080083989A1 Semiconductor Device and Method for Fabricating the Same 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080083989A1
公开(公告)日：2008-04-10
申请号：US10578351
申请日：2005-05-20
申请人： Nobuo Aoi , Hideo Nakagawa , Atsushi Ikeda
发明人： Nobuo Aoi , Hideo Nakagawa , Atsushi Ikeda
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L21/28562 , H01L21/76846 , H01L21/76873
摘要： A semiconductor device includes insulation films (6 and 8) formed over a silicon substrate (1), a buried wire (14) formed in the insulation films (6 and 8), and a barrier metal film (A1) formed between each of the insulation films (6 and 8) and the buried wire (14). The barrier metal film (A1) is formed of a metal oxide film (11), a transition layer (12a) and a metal film (13) stacked in this order in the direction from a side of the barrier metal film (A1) at which the insulation films (6 and 8) exists to a side thereof at which the buried wire (14) exists. The transition layer (12a) is formed of a single atomic layer having substantially an intermediate composition between respective compositions of the metal oxide film (11) and the metal film (13).
摘要翻译：半导体器件包括形成在硅衬底（1）上的绝缘膜（6和8），形成在绝缘膜（6和8）中的掩埋线（14）和形成在绝缘膜（6和8）之间的阻挡金属膜绝缘膜（6和8）和掩埋线（14）。阻挡金属膜（A 1）由金属氧化物膜（11），过渡层（12a）和金属膜（13）沿着从阻挡金属膜（A 1），其中绝缘膜（6和8）存在于存在埋地线（14）的一侧。过渡层（12a）由在金属氧化物膜（11）和金属膜（13）的各组成之间基本上具有中间组成的单一原子层形成。

7. 发明授权

US07332446B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device 有权
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US07332446B2
公开(公告)日：2008-02-19
申请号：US10808692
申请日：2004-03-25
申请人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Motoaki Iwabuchi , Hideo Nakagawa , Masaru Sasago
发明人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Asano , Motoaki Iwabuchi , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L21/469
CPC分类号： H01L21/02126 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： According to the invention, the thin film having the thickness controlled desirably can be easily formed using common semiconductor processes. Provided is a coating liquid for forming the porous film having an excellent dielectric property and mechanical property. Specifically, the coating liquid for forming a porous film comprises the condensation product obtained by condensation of one or more silicate compounds represented by the formula (X2O) i(SiO2)j(H2O)k and one more organosilate compounds represented by the formula (X2O)a(RSiO1.5)b(H2O)c. Thus, the porous insulating film having sufficient mechanical strength and dielectric properties for use in the semiconductor manufacturing process can be manufactured.
摘要翻译：根据本发明，可以使用普通的半导体工艺容易地形成具有控制厚度的薄膜。提供一种用于形成具有优异的介电性能和机械性能的多孔膜的涂布液。具体地，用于形成多孔膜的涂布液包括通过一种或多种由式（X 2 O 2）O表示的硅酸盐化合物（SiO 2）的缩合获得的缩合产物，（H 2）2）另外，另外还有一种由式（ⅩⅪ）表示的有机硅酸盐化合物（H 2 O）C（H 2 O）C（H 2 O）。因此，可以制造用于半导体制造工艺中具有足够的机械强度和介电性能的多孔绝缘膜。

8. 发明授权

US07291554B2 Method for forming semiconductor device 有权
标题翻译：半导体器件形成方法
公开(公告)号：US07291554B2
公开(公告)日：2007-11-06
申请号：US11090885
申请日：2005-03-28
申请人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
发明人： Hideo Nakagawa , Masaru Sasago , Yoshihiko Hirai
IPC分类号： H01L21/28
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00 , H01L21/76807 , H01L21/76808 , H01L21/76817 , H01L21/76828
摘要： A method for forming a semiconductor device includes the steps of forming a flowable film made of an insulating material with flowability; forming a first concave portion in the flowable film through transfer of a convex portion of a pressing face of a pressing member by pressing the pressing member against the flowable film; forming a solidified film having the first concave portion by solidifying the flowable film through annealing at a first temperature with the pressing member pressed against the flowable film; forming a burnt film having the first concave portion by burning the solidified film through annealing at a second temperature higher than the first temperature; forming a second concave portion connected at least to the first concave portion in the burnt film by forming, on the burnt film, a mask having an opening for forming the second concave portion and etching the burnt film by using the mask; and forming a plug and a metal interconnect by filing the first concave portion and the second concave portion of the burnt film with a conductive film.
摘要翻译：一种形成半导体器件的方法包括以下步骤：形成由具有流动性的绝缘材料制成的可流动膜; 通过将所述按压部件压靠在所述可流动膜上，通过使按压部件的按压面的凸部转移而在所述可流动膜中形成第一凹部; 通过使所述挤压构件压靠在所述可流动膜上，在第一温度下使所述可流动膜固化，形成具有所述第一凹部的固化膜; 通过在比所述第一温度高的第二温度退火来烧结所述固化膜，形成具有所述第一凹部的燃烧膜; 通过在所述燃烧膜上形成具有用于形成所述第二凹部的开口的掩模，并且通过使用所述掩模来蚀刻所述燃烧膜，形成至少与所述燃烧膜中的所述第一凹部连接的第二凹部; 以及通过用导电膜填充所述燃烧膜的所述第一凹部和所述第二凹部来形成插塞和金属互连。

9. 发明授权

US07282452B2 Etching method, semiconductor and fabricating method for the same 有权
标题翻译：蚀刻方法，半导体及其制造方法相同
公开(公告)号：US07282452B2
公开(公告)日：2007-10-16
申请号：US10679464
申请日：2003-10-07
申请人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
发明人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
IPC分类号： H01L21/302
CPC分类号： H01L21/31053 , H01L21/31116 , H01L21/31144 , H01L21/76801 , H01L21/76802 , H01L21/76804 , H01L21/76805 , H01L21/76807 , H01L21/76808 , H01L21/76822 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76835
摘要： An organic/inorganic hybrid film represented by SiCx−HyOz (x>0, y≧0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.
摘要翻译：由SiC x-x O x z（x> 0，y> = 0，z> 0）表示的有机/无机混合膜，用含氟，碳和氮的蚀刻气体进行等离子体蚀刻。在蚀刻期间，由于蚀刻气体中存在氮，从有机/无机混合膜的表面部分除去碳成分，从而使表面部分重新形成。重整表面部分用含氟和碳的蚀刻气体进行等离子体蚀刻。

10. 发明申请

US20070218643A1 Material for forming insulating film with low dielectric constant, low dielectric insulating film, method for forming low dielectric insulating film and semiconductor device 有权
标题翻译：用于形成具有低介电常数的绝缘膜的材料，低介电绝缘膜，用于形成低介电绝缘膜的方法和半导体器件
公开(公告)号：US20070218643A1
公开(公告)日：2007-09-20
申请号：US11798085
申请日：2007-05-10
申请人： Hideo Nakagawa , Masaru Sasago
发明人： Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L21/76
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/312 , H01L21/316 , H01L21/31695 , H01L23/5222 , H01L23/5329 , H01L24/03 , H01L24/05 , H01L24/48 , H01L2221/1047 , H01L2224/04042 , H01L2224/05093 , H01L2224/05556 , H01L2224/05599 , H01L2224/27416 , H01L2224/451 , H01L2224/48463 , H01L2224/85424 , H01L2224/85447 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01074 , H01L2924/12044 , H01L2224/45099 , H01L2924/00
摘要： A material for forming an insulating film with low dielectric constant of this invention is a solution including a fine particle principally composed of a silicon atom and an oxygen atom and having a large number of pores, a resin and a solvent.
摘要翻译：用于形成本发明的具有低介电常数的绝缘膜的材料是包括主要由硅原子和氧原子组成并且具有大量孔隙的细颗粒，树脂和溶剂的溶液。

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