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1. 发明授权

US5627111A Electron emitting device and process for producing the same 失效
标题翻译：电子发射器件及其制造方法
公开(公告)号：US5627111A
公开(公告)日：1997-05-06
申请号：US472111
申请日：1995-06-07
申请人： Takeo Tsukamoto , Akira Shimizu , Akira Suzuki , Masao Sugata , Isamu Shimoda , Masahiko Okunuki
发明人： Takeo Tsukamoto , Akira Shimizu , Akira Suzuki , Masao Sugata , Isamu Shimoda , Masahiko Okunuki
IPC分类号： H01J1/14 , H01J1/316 , H01J9/04 , H01L21/465
CPC分类号： H01J1/316 , H01J1/14 , H01J9/042 , H01J2201/3165
摘要： An electron emitting device causes electron emission by a current supply in a coarse resistor film. The coarse thin resistor film is composed at least of a coarse thin silicon film.
摘要翻译：电子发射器件通过粗电阻膜中的电流源引起电子发射。粗糙的薄电阻膜至少由粗的薄膜构成。

2. 发明授权

US5574438A Method for transferring information, and in particular for performing a logic operation, using electron beams 失效
标题翻译：用于使用电子束传送信息，特别是用于执行逻辑操作的方法
公开(公告)号：US5574438A
公开(公告)日：1996-11-12
申请号：US242236
申请日：1994-05-13
申请人： Fumitaka Kan , Kenji Nakamura , Masanori Takenouchi , Naoji Hayakawa , Isamu Shimoda , Masahiko Okunuki
发明人： Fumitaka Kan , Kenji Nakamura , Masanori Takenouchi , Naoji Hayakawa , Isamu Shimoda , Masahiko Okunuki
IPC分类号： G11C7/00 , G11C11/23 , H03K19/14 , H04Q1/00
CPC分类号： H03K19/14 , G11C11/23 , G11C7/005
摘要： In a method for transferring information in a form of electron beam, an electron beam detector detects the electron beam, and emission of the electron beam from a predetermined electron beam source is controlled in accordance with a signal from the detector upon detection of the electron beam. A deflection electrode is also used to deflect the electron beams according to an electric or magnetic field to perform charge shifting, logical additions, logical multiplications, image formation, and the like.
摘要翻译：在以电子束形式传送信息的方法中，电子束检测器检测电子束，并且在检测到电子束时根据来自检测器的信号来控制来自预定电子束源的电子束的发射。偏转电极也用于根据电场或磁场偏转电子束，以执行电荷转移，逻辑加法，逻辑乘法，图像形成等。

3. 发明授权

US5559342A Electron emitting device having a polycrystalline silicon resistor coated with a silicide and an oxide of a work function reducing material 失效
标题翻译：具有涂覆有硅化物的多晶硅电阻器和功函数减少材料的氧化物的电子发射器件
公开(公告)号：US5559342A
公开(公告)日：1996-09-24
申请号：US418091
申请日：1995-04-06
申请人： Takeo Tsukamoto , Akira Shimizu , Akira Suzuki , Masao Sugata , Isamu Shimoda , Masahiko Okunuki
发明人： Takeo Tsukamoto , Akira Shimizu , Akira Suzuki , Masao Sugata , Isamu Shimoda , Masahiko Okunuki
IPC分类号： H01J1/14 , H01J1/316 , H01J9/04 , H01J19/24 , H01L29/12
CPC分类号： H01J1/316 , H01J1/14 , H01J9/042 , H01J2201/3165
摘要： An electron emitting device causes electron emission by a current supply in a coarse resistor film. The coarse thin resistor film is composed at least of a coarse thin silicon film.
摘要翻译：电子发射器件通过粗电阻膜中的电流源引起电子发射。粗糙的薄电阻膜至少由粗的薄膜构成。

4. 发明授权

US5459573A Light quantity controlling apparatus 失效
标题翻译：光量控制装置
公开(公告)号：US5459573A
公开(公告)日：1995-10-17
申请号：US291747
申请日：1994-08-17
申请人： Naoto Abe , Koji Uda , Isamu Shimoda , Shunichi Uzawa , Noriyuki Nose
发明人： Naoto Abe , Koji Uda , Isamu Shimoda , Shunichi Uzawa , Noriyuki Nose
IPC分类号： G01B11/00 , G01D5/26 , G03F9/00 , H01L21/68 , H01L31/12 , H01L33/00 , H01S5/06 , H01S5/062 , H01S5/0683 , G01N21/86
CPC分类号： G03F9/7088 , G03F9/7049 , H01L21/68 , H01L21/682 , H01S5/06835 , H01S5/06216
摘要： A position detecting apparatus usable for aligning mask and a semiconductor wafer, wherein a laser beam produced by a semiconductor laser is projected through a predetermined optical system to alignment marks formed on the mask and the wafer, and the light reflected by the marks are detected by an accumulation type sensor to produce an electrical signal, from which the relative positional relation between the mask and the wafer are detected on the basis of the electrical signal. To obtain proper mark signals, the quantity of light incident on the accumulation sensor is controlled. In this apparatus, the beam emitting strength of the semiconductor laser is made constant, and the control of thee amount of light incident on the accumulation sensor is effected by controlling the operation period of the semiconductor laser. In addition, the actuation timing of the semiconductor laser is advanced from the accumulation start of the accumulation type sensor by the time required for the semiconductor laser to be thermally stabilized after its actuation. The mark detection signal produced by the accumulation sensor is precise.
摘要翻译：一种可用于对准掩模和半导体晶片的位置检测装置，其中由半导体激光器产生的激光束通过预定的光学系统投射到形成在掩模和晶片上的对准标记，并且由标记反射的光被用于产生电信号的累积型传感器，根据电信号检测掩模和晶片之间的相对位置关系。为了获得适当的标记信号，控制入射在累积传感器上的光量。在该装置中，半导体激光器的发射光强度保持恒定，并且通过控制半导体激光器的工作周期来控制入射到积聚传感器上的光量。此外，半导体激光器的激活定时从累积型传感器的累积开始到半导体激光器在其致动之后被热稳定所需的时间前进。由积累传感器产生的标记检测信号是精确的。

5. 发明授权

US5176557A Electron emission element and method of manufacturing the same 失效
标题翻译：电子发射元件及其制造方法
公开(公告)号：US5176557A
公开(公告)日：1993-01-05
申请号：US746154
申请日：1991-08-14
申请人： Masahiko Okunuki , Akira Suzuki , Isamu Shimoda , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Takao Yonehara , Takeshi Ichikawa
发明人： Masahiko Okunuki , Akira Suzuki , Isamu Shimoda , Tetsuya Kaneko , Takeo Tsukamoto , Toshihiko Takeda , Takao Yonehara , Takeshi Ichikawa
IPC分类号： H01J1/304 , H01J3/02 , H01J9/02 , H01J31/12
CPC分类号： H01J3/022 , H01J1/3042 , H01J31/127 , H01J9/025 , H01J2201/30446
摘要： A multi type electron emission element comprises a plurality of electrodes formed on a deposition surface of an insulating material and each having a conical portion of a single crystal, an insulating layer formed on the deposition surface and having openings respectively centered on the conical portions, and a deriving electrodes, part of which is formed near at least the concial portions, the deriving electrode being formed on the insulating layer.
摘要翻译：多型电子发射元件包括形成在绝缘材料的沉积表面上并且各自具有单晶的锥形部分的多个电极，形成在沉积表面上并具有分别以锥形部分为中心的开口的绝缘层，以及导电电极，其一部分形成在至少相邻的部分附近，导电电极形成在绝缘层上。

6. 发明授权

US5008703A Exposure apparatus and control of the same 失效
标题翻译：曝光装置和控制相同
公开(公告)号：US5008703A
公开(公告)日：1991-04-16
申请号：US407434
申请日：1989-09-06
申请人： Eigo Kawakami , Kunitaka Ozawa , Koji Uda , Isamu Shimoda , Shunichi Uzawa
发明人： Eigo Kawakami , Kunitaka Ozawa , Koji Uda , Isamu Shimoda , Shunichi Uzawa
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
CPC分类号： G03F7/7075 , G03F7/709
摘要： Exposure apparatus and control of the same, for exposing a semiconductor wafer to a mask with a predetermined radiation energy, for manufacture of semiconductor devices, is disclosed. During a time period in which the mask-to-wafer alignment or the exposure of the wafer to the mask is made, the operation of any other driving device that has no participation in the aligning operation or the exposure operation, is prohibited. This ensures high-precision pattern printing.

7. 发明授权

US4990771A Scanning optical apparatus having focus position detector 失效
标题翻译：具有聚焦位置检测器的扫描光学装置
公开(公告)号：US4990771A
公开(公告)日：1991-02-05
申请号：US522070
申请日：1990-05-11
申请人： Kazuo Minoura , Isamu Shimoda
发明人： Kazuo Minoura , Isamu Shimoda
IPC分类号： B41J2/44 , G02B26/10 , G06K15/12 , H04N1/113 , H04N1/23
CPC分类号： G06K15/1219 , G02B26/10
摘要： A scanning optical apparatus comprises a light source unit, an optical system for converging a light beam from the light source unit at a predetermined position, a moving device for moving the converged position of the light beam by the optical system, a deflecting device for deflecting the light beam from the light source unit in a predetermined direction, a light receiving device for receiving the light beam deflected by the deflecting device, a processing device for processing a signal obtained by said light receiving device, and a control device for controlling the moving device corresponding to a signal from the processing device. The light beam emitted from the light source unit is scanned on the light receiving device a plurality of times through the optical system and the deflecting device, while the converged position of the light beam is moved by the moving device. The signal from the light receiving device during each of the plurality of scans is compared or calculated by the processing device to thereby adjust and determine the converged position of the light beam by the optical system.

8. 发明授权

US5498501A Exposure method 失效
标题翻译：曝光方法
公开(公告)号：US5498501A
公开(公告)日：1996-03-12
申请号：US416503
申请日：1995-04-04
申请人： Isamu Shimoda , Takao Kariya , Nobutoshi Mizusawa , Kunitaka Ozawa , Shunichi Uzawa
发明人： Isamu Shimoda , Takao Kariya , Nobutoshi Mizusawa , Kunitaka Ozawa , Shunichi Uzawa
IPC分类号： G03F7/20 , G03F9/00
CPC分类号： G03F7/70066 , G03F7/2022 , G03F7/7045 , Y10S438/949
摘要： A method of manufacturing of semiconductor devices, includes exposing different portions of a semiconductor substrate with a first exposure apparatus having a first exposure range; placing and aligning the semiconductor substrate with respect to a second exposure range of a second exposure apparatus, which range is larger than the first exposure range of the first exposure apparatus; detecting an alignment error of each of the portions of the semiconductor substrate as covered by the second exposure range of the second exposure apparatus; calculating an overall alignment error of those portions of the semiconductor substrate with respect to the entire second exposure range of the second exposure apparatus, on the basis of the detected alignment errors; and controlling the exposure operation of the second exposure apparatus on the basis of the calculated overall alignment error.
摘要翻译：一种半导体器件的制造方法，包括用具有第一曝光范围的第一曝光装置曝光半导体衬底的不同部分; 将半导体衬底相对于第二曝光装置的第二曝光范围放置和对准，该范围大于第一曝光装置的第一曝光范围; 检测由第二曝光装置的第二曝光范围所覆盖的半导体衬底的每个部分的对准误差; 基于检测到的对准误差，计算半导体衬底的这些部分相对于第二曝光装置的整个第二曝光范围的总体对准误差; 并根据计算的整体对准误差来控制第二曝光装置的曝光操作。

9. 发明授权

US5355127A Method and apparatus for transferring information by utilizing electron beam 失效
标题翻译：利用电子束传送信息的方法和装置
公开(公告)号：US5355127A
公开(公告)日：1994-10-11
申请号：US902783
申请日：1992-06-24
申请人： Fumitaka Kan , Kenji Nakamura , Masanori Takenouchi , Naoji Hayakawa , Isamu Shimoda , Masahiko Okunuki
发明人： Fumitaka Kan , Kenji Nakamura , Masanori Takenouchi , Naoji Hayakawa , Isamu Shimoda , Masahiko Okunuki
IPC分类号： G11C7/00 , G11C11/23 , H03K19/14 , H04Q1/00
CPC分类号： H03K19/14 , G11C11/23 , G11C7/005
摘要： In a method and apparatus for transferring information in a form of electron beam, an electron beam detector detects the electron beam, and emission of the electron beam from a predetermined electron beam source is controlled in accordance with a signal from the detector upon detection of the electron beam. In the method and apparatus, a deflection electrode is also used to deflect the electron beams according to an electric or magnetic field to perform charge shifting, logical additions, Logical multiplications, image formation, and the like.
摘要翻译：在用于以电子束形式传送信息的方法和装置中，电子束检测器检测电子束，并且在检测到电子束时根据来自检测器的信号来控制来自预定电子束源的电子束的发射电子束。在该方法和装置中，偏转电极还用于根据电场或磁场偏转电子束，以执行电荷转移，逻辑加法，逻辑乘法，图像形成等。

10. 发明授权

US5131022A Exposure method and apparatus 失效
标题翻译：曝光方法和装置
公开(公告)号：US5131022A
公开(公告)日：1992-07-14
申请号：US769493
申请日：1991-10-01
申请人： Shigeru Terashima , Mitsuaki Amemiya , Isamu Shimoda , Shunichi Uzawa , Takao Kariya
发明人： Shigeru Terashima , Mitsuaki Amemiya , Isamu Shimoda , Shunichi Uzawa , Takao Kariya
IPC分类号： G03F7/20
CPC分类号： G03F7/70558 , G03F7/2008 , G03F7/70875
摘要： An exposure apparatus for lithographically transferring a pattern of a mask onto a workpiece coated with a radiation sensitive material includes a first filter made the same material as of the substrate of the mask, a second filter formed by a base member made of the same material as the mask substrate and being coated with a radiation sensitive material, an illuminometer for measuring illuminance of light passed through the first and second filters, respectively, and a control device for determining an exposure time for lithographic transfer of the pattern of the mask onto the wafer, on the basis of a difference between a measured value as measured through the first filter and a measured value as measured through the second filter.

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