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    • 1. 发明申请
    • THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
    • 薄膜晶体管阵列及其制造方法
    • US20130087800A1
    • 2013-04-11
    • US13424278
    • 2012-03-19
    • Pil Soon HONGGwui-Hyun ParkJin-Su ByunSang Gab Kim
    • Pil Soon HONGGwui-Hyun ParkJin-Su ByunSang Gab Kim
    • H01L27/15H01L33/08
    • H01L27/124H01L29/41733
    • The present invention relates to a thin film transistor array panel and a manufacturing method thereof that prevent disconnection of wiring due to misalignment of a mask, and simplify a process and reduce cost by reducing the number of masks. The thin film transistor array panel according to the disclosure includes a source electrode enclosing an outer part of the first contact hole and formed on the second insulating layer; a drain electrode enclosing an outer part of the second contact hole and formed on the second insulating layer; a first connection electrode connecting the source region of the semiconductor layer and the source electrode through the first contact hole; and a second connection electrode connecting the drain region of the semiconductor layer and the drain electrode through the second contact hole.
    • 薄膜晶体管阵列面板及其制造方法技术领域本发明涉及一种薄膜晶体管阵列面板及其制造方法,其能够防止由于掩模的未对准而使布线断开,并且通过减少掩模数来简化处理并降低成本。 根据本发明的薄膜晶体管阵列面板包括:源电极,其包围第一接触孔的外部部分并形成在第二绝缘层上; 漏电极,其包围所述第二接触孔的外部部分并形成在所述第二绝缘层上; 第一连接电极,通过第一接触孔连接半导体层的源极区域和源极电极; 以及通过第二接触孔连接半导体层的漏极区域和漏极电极的第二连接电极。
    • 2. 发明授权
    • Thin film transistor array panel
    • 薄膜晶体管阵列面板
    • US08653530B2
    • 2014-02-18
    • US13424278
    • 2012-03-19
    • Pil Soon HongGwui-Hyun ParkJin-Su ByunSang Gab Kim
    • Pil Soon HongGwui-Hyun ParkJin-Su ByunSang Gab Kim
    • H01L29/00
    • H01L27/124H01L29/41733
    • The present invention relates to a thin film transistor array panel and a manufacturing method thereof that prevent disconnection of wiring due to misalignment of a mask, and simplify a process and reduce cost by reducing the number of masks. The thin film transistor array panel according to the disclosure includes a source electrode enclosing an outer part of the first contact hole and formed on the second insulating layer; a drain electrode enclosing an outer part of the second contact hole and formed on the second insulating layer; a first connection electrode connecting the source region of the semiconductor layer and the source electrode through the first contact hole; and a second connection electrode connecting the drain region of the semiconductor layer and the drain electrode through the second contact hole.
    • 薄膜晶体管阵列面板及其制造方法技术领域本发明涉及一种薄膜晶体管阵列面板及其制造方法,其能够防止由于掩模的未对准而使布线断开,并且通过减少掩模数来简化处理并降低成本。 根据本发明的薄膜晶体管阵列面板包括:源电极,其包围第一接触孔的外部部分并形成在第二绝缘层上; 漏电极,其包围所述第二接触孔的外部部分并形成在所述第二绝缘层上; 第一连接电极,通过第一接触孔连接半导体层的源极区域和源极电极; 以及通过第二接触孔连接半导体层的漏极区域和漏极电极的第二连接电极。