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1. 发明申请

US20140319553A1 LIGHT EMITTING DEVICE FOR HIGH CURRENT OPERATION 审中-公开
标题翻译：用于高电流操作的发光装置
公开(公告)号：US20140319553A1
公开(公告)日：2014-10-30
申请号：US14240996
申请日：2012-08-22
申请人： Kyung Hee Ye , Dae Sung Cho , Ki Bum Nam
发明人： Kyung Hee Ye , Dae Sung Cho , Ki Bum Nam
IPC分类号： H01L33/50 , H01L33/58 , H01L27/15
CPC分类号： H01L33/504 , F21K9/237 , F21K9/64 , F21V29/89 , F21Y2101/00 , F21Y2105/10 , F21Y2115/10 , G02B5/283 , H01L25/0753 , H01L27/15 , H01L33/0004 , H01L33/46 , H01L33/50 , H01L33/507 , H01L33/58 , H01L33/60 , H01L2924/0002 , H05B33/0857 , H01L2924/00
摘要： Disclosed is a light-emitting element for high-current drive. The light-emitting element comprises: a light-emitting diode chip which emits ultraviolet light; and a wavelength conversion layer which converts the wavelength of the ultraviolet light emitted from the light-emitting diode chip into visible light. The light-emitting diode chip is driven at a current density of at least 150 A/cm2.
摘要翻译：公开了一种用于高电流驱动的发光元件。发光元件包括：发射紫外光的发光二极管芯片; 以及波长转换层，其将从发光二极管芯片发射的紫外光的波长转换成可见光。以至少150A / cm 2的电流密度驱动发光二极管芯片。

2. 发明申请

US20120145992A1 LIGHT-EMITTING DIODE HAVING AN INTERLAYER WITH HIGH VOLTAGE DENSITY AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：具有高电压密度的中间层的发光二极管及其制造方法
公开(公告)号：US20120145992A1
公开(公告)日：2012-06-14
申请号：US13392060
申请日：2010-08-25
申请人： Hong Jae Yoo , Kyung Hee Ye
发明人： Hong Jae Yoo , Kyung Hee Ye
IPC分类号： H01L33/06 , H01L33/32
CPC分类号： H01L33/32 , H01L33/02 , H01L33/12
摘要： Disclosed herein are gallium nitride based light emitting diodes having interlayers with high dislocation density and a method of fabricating the same. The light emitting diode includes: a substrate; a buffer layer disposed on the substrate; an n-type contact layer disposed on the buffer; a p-type contact layer disposed on the n-type contact layer; an active layer interposed between the n-type contact layer and the p-type contact layer; a first lower semiconductor layer interposed between the buffer layer and the n-type contact layer; and a first interlayer interposed between the first lower semiconductor layer and the n-type contact layer, wherein the first interlayer has lower dislocation density than the buffer layer and higher dislocation density than the first lower semiconductor layer. This way, the interlayers with higher dislocation density prevent dislocations formed within the first lower semiconductor layer from being transferred to the n-type contact layer.
摘要翻译：本文公开了具有高位错密度的中间层的氮化镓基发光二极管及其制造方法。发光二极管包括：基板; 设置在所述基板上的缓冲层; 设置在缓冲器上的n型接触层; 设置在n型接触层上的p型接触层; 介于n型接触层和p型接触层之间的有源层; 介于缓冲层和n型接触层之间的第一下半导体层; 以及插入在所述第一下半导体层和所述n型接触层之间的第一夹层，其中所述第一夹层具有比所述缓冲层低的位错密度和比所述第一下半导体层高的位错密度。这样，具有较高位错密度的夹层防止形成在第一下半导体层内的位错被转移到n型接触层。

3. 发明授权

US08183072B2 Light emitting device having plurality of non-polar light emitting cells and method of fabricating the same 有权
标题翻译：具有多个非极性发光单元的发光器件及其制造方法
公开(公告)号：US08183072B2
公开(公告)日：2012-05-22
申请号：US12624011
申请日：2009-11-23
申请人： Won Cheol Seo , Kwang Choong Kim , Kyung Hee Ye
发明人： Won Cheol Seo , Kwang Choong Kim , Kyung Hee Ye
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L27/156
摘要： Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.
摘要翻译：公开了具有多个非极性发光单元的发光器件及其制造方法。该方法包括制备具有上表面的蓝宝石或碳化硅的第一衬底，其具有r面，a面或m面。第一衬底在其上表面上具有条状的抗生长图案，以及在抗生长图案之间具有c面侧壁的凹陷区域。在具有凹陷区域的衬底上生长氮化物半导体层，并且将氮化物半导体层图案化以形成彼此分离的发光元件。因此，提供了具有优异的晶体质量的非极性发光单元的发光器件。

4. 发明申请

US20120104424A1 LIGHT EMITTING DEVICE HAVING PLURALITY OF NON-POLAR LIGHT EMITTING CELLS AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有非极性发光电池的多重性的发光装置及其制造方法
公开(公告)号：US20120104424A1
公开(公告)日：2012-05-03
申请号：US13345348
申请日：2012-01-06
申请人： Won Cheol SEO , Kwang Choong KIM , Kyung Hee YE
发明人： Won Cheol SEO , Kwang Choong KIM , Kyung Hee YE
IPC分类号： H01L33/08 , H01L33/60
CPC分类号： H01L33/007 , H01L27/156
摘要： Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.
摘要翻译：公开了具有多个非极性发光单元的发光器件及其制造方法。该方法包括制备具有上表面的蓝宝石或碳化硅的第一衬底，其具有r面，a面或m面。第一衬底在其上表面上具有条状的抗生长图案，以及在抗生长图案之间具有c面侧壁的凹陷区域。在具有凹陷区域的衬底上生长氮化物半导体层，并且将氮化物半导体层图案化以形成彼此分离的发光元件。因此，提供了具有优异的晶体质量的非极性发光单元的发光器件。

5. 发明申请

US20110241050A1 HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME 有权
公开(公告)号：US20110241050A1
公开(公告)日：2011-10-06
申请号：US13077254
申请日：2011-03-31
申请人： Kyung Hee YE , Chang Youn KIM , Jin Cheol SHIN , Joon Hee LEE , Jong Kyun YOU , Hong Chol LIM
发明人： Kyung Hee YE , Chang Youn KIM , Jin Cheol SHIN , Joon Hee LEE , Jong Kyun YOU , Hong Chol LIM
IPC分类号： H01L33/46
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/387 , H01L33/42 , H01L33/44
摘要： A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

6. 发明申请

US20110241045A1 HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：高效发光二极管及其制造方法
公开(公告)号：US20110241045A1
公开(公告)日：2011-10-06
申请号：US13018557
申请日：2011-02-01
申请人： Kyung Hee YE , Chang Youn KIM , Jin Cheol SHIN , Joon Hee LEE , Jong Kyun YOU , Hong Chol LIM
发明人： Kyung Hee YE , Chang Youn KIM , Jin Cheol SHIN , Joon Hee LEE , Jong Kyun YOU , Hong Chol LIM
IPC分类号： H01L33/46
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/387 , H01L33/42 , H01L33/44
摘要： A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.
摘要翻译：一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。

7. 发明申请

US20110222285A1 LIGHT EMITTING DEVICE HAVING A PLURALITY OF LIGHT EMITTING CELLS 有权
标题翻译：具有多个发光细胞的发光装置
公开(公告)号：US20110222285A1
公开(公告)日：2011-09-15
申请号：US13009284
申请日：2011-01-19
申请人： Kyung Hee YE , Dae Sung Kal , Won Cheol Seo , Young Eun Yang , Sum Geun Lee
发明人： Kyung Hee YE , Dae Sung Kal , Won Cheol Seo , Young Eun Yang , Sum Geun Lee
IPC分类号： F21S4/00
CPC分类号： H01L33/08 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/0002 , H05B33/0821 , H01L2924/00
摘要： The present invention relates to a light emitting device including at least three pairs of half-wave light emitting units, each pair including a terminal of a first half-wave light emitting unit connected to a terminal of a second half-wave light emitting unit, the terminals having the same polarity, a polarity of the connected terminals of one half-wave light emitting unit pair being opposite to the polarity of the connected terminals of an adjacent half-wave light emitting unit. The light emitting device also includes at least two full-wave light emitting units each connected to adjacent pairs of half-wave light emitting units. The half-wave light emitting units and the full-wave light emitting units each have at least one light emitting cell, the half-wave light emitting units each have a first terminal and a second terminal, the full-wave light emitting units each have a third terminal having the same polarity as the first terminal and a fourth terminal having the same polarity as the second terminal, and the third terminal of each full-wave light emitting unit being connected to the second terminal of adjacent half-wave light emitting units and the fourth terminal of each half-wave light emitting unit being connected to the first terminal of adjacent half-wave light emitting units.
摘要翻译：本发明涉及一种包括至少三对半波发光单元的发光器件，每一对包括连接到第二半波发光单元的端子的第一半波发光单元的端子，具有相同极性的端子，一个半波发光单元对的连接端子的极性与相邻半波发光单元的连接端子的极性相反。发光器件还包括至少两个全波发光单元，每个全波发光单元各自连接到相邻的半波发光单元对。半波发光单元和全波发光单元各自具有至少一个发光单元，半波发光单元各自具有第一端子和第二端子，全波发光单元各自具有具有与第一端子极性相同的第三端子和与第二端子具有相同极性的第四端子，并且每个全波发光单元的第三端子连接到相邻半波发射单元的第二端子并且每个半波发光单元的第四端子连接到相邻的半波发光单元的第一端子。

8. 发明授权

US07709849B1 Light emitting diode having plurality of light emitting cells and method of fabricating the same 有权
公开(公告)号：US07709849B1
公开(公告)日：2010-05-04
申请号：US12620887
申请日：2009-11-18
申请人： Dae Sung Kal , Dae Won Kim , Won Cheol Seo , Kyung Hee Ye , Joo Woong Lee
发明人： Dae Sung Kal , Dae Won Kim , Won Cheol Seo , Kyung Hee Ye , Joo Woong Lee
IPC分类号： H01L29/18
CPC分类号： H01L27/153 , H01L24/24 , H01L33/44 , H01L33/507 , H01L33/62 , H01L2224/24137 , H01L2924/12041 , H01L2924/00
摘要： The present invention discloses a light emitting diode. The light emitting diode includes a plurality of light emitting cells arranged on a substrate, each light emitting cell including a first semiconductor layer and a second semiconductor layer arranged on the first semiconductor layer; a first dielectric layer arranged on each light emitting cell and including a first opening to expose the first semiconductor layer and a second opening to expose the second semiconductor layer; a wire arranged on the first dielectric layer to couple two of the light emitting cells; and a second dielectric layer arranged on the first dielectric layer and the wire. The first dielectric layer and the second dielectric layer comprise the same material and the first dielectric layer is thicker than the second dielectric layer.

9. 发明授权

US08810124B2 AC light emitting device with long-persistent phosphor and light emitting device module having the same 有权
标题翻译：具有长持续荧光体和发光器件模块的AC发光器件具有相同的功能
公开(公告)号：US08810124B2
公开(公告)日：2014-08-19
申请号：US12581507
申请日：2009-10-19
申请人： Chung Hoon Lee , Yeo Jin Yoon , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
发明人： Chung Hoon Lee , Yeo Jin Yoon , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
IPC分类号： H05B33/14 , H05B33/08 , F21K99/00 , H01L25/075 , H01L33/50 , F21Y113/00
CPC分类号： H01L33/504 , F21K9/00 , F21K9/62 , F21K9/64 , F21V23/06 , F21Y2113/13 , F21Y2115/10 , H01L25/0753 , H01L33/50 , H01L2224/48137 , H01L2224/49107 , H05B33/0821
摘要： Disclosed are an AC light emitting device with a long-persistent phosphor and an AC light emitting device module having the same. According to an exemplary embodiment of the present invention, the light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. Further, a first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip; and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence resulted from the second long-persistent phosphor is allowed to be different from that resulted from the first long-persistent phosphor, whereby a flicker effect of the AC light emitting device can be more alleviated.
摘要翻译：公开了具有长持久性荧光体和具有该荧光体的AC发光器件模块的交流发光器件。根据本发明的示例性实施例，发光器件包括第一发光二极管芯片和第二发光二极管芯片，每个芯片在单个基板上具有多个发光单元。此外，第一长持续荧光体位于第一发光二极管芯片上，以对从第一发光二极管芯片发射的光的一部分进行波长转换; 并且第二长持续荧光体位于第二发光二极管芯片上，以对从第二发光二极管芯片发射的光的一部分进行波长转换。使得由第二长持续荧光体产生的余辉发光与第一长持续荧光体不同，从而可以进一步减轻AC发光器件的闪烁效应。

10. 发明授权

US08772805B2 High efficiency light emitting diode and method for fabricating the same 有权
公开(公告)号：US08772805B2
公开(公告)日：2014-07-08
申请号：US13018557
申请日：2011-02-01
申请人： Kyung Hee Ye , Chang Youn Kim , Jin Cheol Shin , Joon Hee Lee , Jong Kyun You , Hong Chol Lim
发明人： Kyung Hee Ye , Chang Youn Kim , Jin Cheol Shin , Joon Hee Lee , Jong Kyun You , Hong Chol Lim
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/387 , H01L33/42 , H01L33/44
摘要： A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

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