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1. 发明授权

US08507910B2 Active matrix display apparatus 有权
标题翻译：主动矩阵显示装置
公开(公告)号：US08507910B2
公开(公告)日：2013-08-13
申请号：US12520944
申请日：2008-01-17
申请人： Masato Ofuji , Katsumi Abe , Masafumi Sano , Hideya Kumomi , Ryo Hayashi
发明人： Masato Ofuji , Katsumi Abe , Masafumi Sano , Hideya Kumomi , Ryo Hayashi
IPC分类号： H01L29/00
CPC分类号： H01L27/3265 , H01L27/3248 , H01L2227/323 , H01L2251/5323
摘要： An active matrix display apparatus includes a transistor, a storage capacitor, and a light-emitting element formed on a substrate. The transistor includes a source electrode, a drain electrode, and a gate electrode. The storage capacitor has a multilayered structure of a first electrode, a dielectric layer, and a second electrode stacked in this order on the substrate, and the light-emitting element has a multilayered structure of a third electrode, a light-emitting layer, and a fourth electrode stacked in this order on the substrate. The first electrode is electrically connected to the gate electrode of the transistor, and at least a part of the storage capacitor is disposed between the substrate and the light-emitting element. All of the substrate, the first electrode, the second electrode, and the third electrode are formed from a material transmitting a visible light emitted by the light-emitting element. Viewing from a top of the substrate, a region for storing charges in the storage capacitor includes or is equal to a light-emitting region of the light-emitting element.
摘要翻译：有源矩阵显示装置包括晶体管，存储电容器和形成在基板上的发光元件。晶体管包括源电极，漏电极和栅电极。存储电容器具有在基板上依次层叠的第一电极，电介质层和第二电极的多层结构，并且发光元件具有第三电极，发光层和多层结构的多层结构在基板上依次层叠的第四电极。第一电极电连接到晶体管的栅电极，并且至少一部分存储电容器设置在基板和发光元件之间。所有的基板，第一电极，第二电极和第三电极由透射由发光元件发出的可见光的材料形成。从基板的顶部观察，用于在存储电容器中存储电荷的区域包括或等于发光元件的发光区域。

2. 发明授权

US08415198B2 Production method of thin film transistor using amorphous oxide semiconductor film 有权
标题翻译：使用非晶氧化物半导体膜的薄膜晶体管的制造方法
公开(公告)号：US08415198B2
公开(公告)日：2013-04-09
申请号：US12374665
申请日：2007-07-26
申请人： Naho Itagaki , Toru Den , Nobuyuki Kaji , Ryo Hayashi , Masafumi Sano
发明人： Naho Itagaki , Toru Den , Nobuyuki Kaji , Ryo Hayashi , Masafumi Sano
IPC分类号： H01L21/00
CPC分类号： H01L29/7869
摘要： A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1×10−3 Pa or less, and a second step of annealing the oxide film in an oxidative atmosphere after the first step.
摘要翻译： 1.一种薄膜晶体管的制造方法，其特征在于，具备包含非晶形氧化物半导体膜的有源层的薄膜晶体管，其特征在于，形成有源层的工序包括在引入氧分压为1×10 -5的气氛中形成氧化膜的第1工序， 3Pa以下，以及在第一工序后的氧化性气氛中退火氧化膜的第二工序。

3. 发明授权

US07923723B2 Thin-film transistor and display device using oxide semiconductor 有权
标题翻译：薄膜晶体管和使用氧化物半导体的显示器件
公开(公告)号：US07923723B2
公开(公告)日：2011-04-12
申请号：US12281783
申请日：2007-02-23
申请人： Ryo Hayashi , Katsumi Abe , Masafumi Sano
发明人： Ryo Hayashi , Katsumi Abe , Masafumi Sano
IPC分类号： H01L29/786 , H01L31/0376 , H01L29/04
CPC分类号： H01L29/7869 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/28202 , H01L29/4908 , H01L29/518 , H01L29/66969
摘要： The thin-film transistor of the present invention has at least a semiconductor layer including: on a substrate, a source electrode, a drain electrode, and a channel region; a gate insulating film; and a gate electrode, wherein the semiconductor layer is an oxide semiconductor layer, and wherein the gate insulating film is amorphous silicon including at least O and N, and the gate insulating film has a distribution of an oxygen concentration in a thickness direction so that the oxygen concentration is high in the side of an interface with an oxide semiconductor layer and the oxygen concentration decreases toward the side of the gate electrode.
摘要翻译：本发明的薄膜晶体管至少具有半导体层，该半导体层包括：基板，源电极，漏电极和沟道区; 栅极绝缘膜; 以及栅电极，其中所述半导体层是氧化物半导体层，并且其中所述栅极绝缘膜是至少包括至少O和N的非晶硅，并且所述栅极绝缘膜具有在厚度方向上的氧浓度的分布，使得在与氧化物半导体层的界面侧的氧浓度高，并且氧浓度朝向栅电极侧减小。

4. 发明申请

US20100085081A1 INVERTER MANUFACTURING METHOD AND INVERTER 有权
标题翻译：逆变器制造方法和逆变器
公开(公告)号：US20100085081A1
公开(公告)日：2010-04-08
申请号：US12597211
申请日：2008-05-15
申请人： Masato Ofuji , Katsumi Abe , Ryo Hayashi , Masafumi Sano , Hideya Kumomi
发明人： Masato Ofuji , Katsumi Abe , Ryo Hayashi , Masafumi Sano , Hideya Kumomi
IPC分类号： H03K19/20 , H03K19/0944 , H01L21/8254 , H01L21/8236 , H01L21/42
CPC分类号： H01L29/7869 , H01L27/1233
摘要： To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors.
摘要翻译：为了提供易于制造的增强耗尽（E / D）逆变器，在本发明中，制造由氧化物半导体构成的逆变器的制造方法，其中沟道层包括选自In， Ga和Zn形成在同一衬底上，所述逆变器是具有多个薄膜晶体管的E / D逆变器，其特征在于包括以下步骤：形成第一晶体管和第二晶体管，第一和第二晶体管的沟道层的厚度第二晶体管是相互不同的; 以及对所述第一和第二晶体管的至少一个沟道层执行热处理。

5. 发明申请

US20090325341A1 PRODUCTION METHOD OF THIN FILM TRANSISTOR USING AMORPHOUS OXIDE SEMICONDUCTOR FILM 有权
标题翻译：使用无定形氧化物半导体膜的薄膜晶体管的生产方法
公开(公告)号：US20090325341A1
公开(公告)日：2009-12-31
申请号：US12374665
申请日：2007-07-26
申请人： Naho Itagaki , Toru Den , Nobuyuki Kaji , Ryo Hayashi , Masafumi Sano
发明人： Naho Itagaki , Toru Den , Nobuyuki Kaji , Ryo Hayashi , Masafumi Sano
IPC分类号： H01L21/336
CPC分类号： H01L29/7869
摘要： A production method of a thin film transistor including an active layer including an amorphous oxide semiconductor film, wherein a step of forming the active layer includes a first step of forming the oxide film in an atmosphere having an introduced oxygen partial pressure of 1×10−3 Pa or less, and a second step of annealing the oxide film in an oxidative atmosphere after the first step.
摘要翻译：一种薄膜晶体管的制造方法，其特征在于，具备包含非晶形氧化物半导体膜的活性层的薄膜晶体管，其特征在于，形成有源层的工序包括在导入氧分压为1×10 -3 Pa的气氛中形成氧化膜的第1工序以及在第一工序后的氧化性气氛中退火氧化膜的第二工序。

6. 发明授权

US07601984B2 Field effect transistor with amorphous oxide active layer containing microcrystals and gate electrode opposed to active layer through gate insulator 有权
标题翻译：具有非晶氧化物活性层的场效应晶体管，其含有微晶体，栅电极通过栅极绝缘体与有源层相对
公开(公告)号：US07601984B2
公开(公告)日：2009-10-13
申请号：US11269600
申请日：2005-11-09
申请人： Masafumi Sano , Katsumi Nakagawa , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Masafumi Sano , Katsumi Nakagawa , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L29/04
CPC分类号： H01L29/78693 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/428 , H01L27/1225 , H01L27/124 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
摘要翻译：提供了可应用于例如TFT的有源层的新颖的无定形氧化物。无定形氧化物包括微晶。

7. 发明申请

US20090102829A1 PIXEL CIRCUIT AND IMAGE DISPLAY APPARATUS HAVING THE PIXEL CIRCUIT 有权
标题翻译：具有像素电路的像素电路和图像显示装置
公开(公告)号：US20090102829A1
公开(公告)日：2009-04-23
申请号：US11683872
申请日：2007-03-08
申请人： Katsumi Abe , Hideya Kumomi , Ryo Hayashi , Masafumi Sano
发明人： Katsumi Abe , Hideya Kumomi , Ryo Hayashi , Masafumi Sano
IPC分类号： G06F3/038 , G09G3/20
CPC分类号： G09G3/325 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2320/043
摘要： A pixel circuit and an image display apparatus are provided making use of a hysteresis characteristics of a transistor for driving a display element. The pixel circuit comprises: a transistor providing both different first and second relations between a gate voltage value and a drain current value at a transition from off state to an on state, and from the on state transits to the off state respectively; a display element supplied as a drive current with a current controlled by the transistor; and a capacitor element connected to a gate electrode of the transistor. One of the first and second relations is utilized during a first period for setting the drive current to be supplied to the display element. And, the other of the first and second relations is utilized during a second period for supplying the drive current to the display element to effect light emission.
摘要翻译：使用用于驱动显示元件的晶体管的滞后特性来提供像素电路和图像显示装置。像素电路包括：晶体管，在从断开状态转换到导通状态时，分别在栅极电压值和漏极电流值之间分别具有不同的第一和第二关系，以及从导通状态转移到断开状态。以由晶体管控制的电流作为驱动电流提供的显示元件; 以及连接到晶体管的栅电极的电容器元件。第一和第二关系中的一个在第一时段期间被利用来设定要提供给显示元件的驱动电流。并且，在第二时段期间利用第一和第二关系中的另一个来向显示元件提供驱动电流以实现发光。

8. 发明申请

US20070090365A1 Field-effect transistor including transparent oxide and light-shielding member, and display utilizing the transistor 审中-公开
标题翻译：包括透明氧化物和遮光构件的场效应晶体管和利用晶体管的显示器
公开(公告)号：US20070090365A1
公开(公告)日：2007-04-26
申请号：US11583022
申请日：2006-10-19
申请人： Ryo Hayashi , Masafumi Sano , Katsumi Abe , Hideya Kumomi , Kojiro Nishi
发明人： Ryo Hayashi , Masafumi Sano , Katsumi Abe , Hideya Kumomi , Kojiro Nishi
IPC分类号： H01L29/04
CPC分类号： H01L29/78633 , G02F1/1368 , H01L27/1225 , H01L27/3248 , H01L27/3272 , H01L29/7869 , H01L29/78693 , H01L2251/5338
摘要： A field-effect transistor includes a substrate, a source electrode, a drain electrode, a gate electrode, a gate-insulating film, and an active layer. The active layer contains an oxide having a transmittance of 70% or more in the wavelength range of 400 to 800 nm. A light-shielding member is provided as a light-shielding structure for the active layer, for example, on the bottom face of the substrate.
摘要翻译：场效应晶体管包括衬底，源电极，漏电极，栅电极，栅极绝缘膜和有源层。有源层含有在400〜800nm的波长范围内透过率为70％以上的氧化物。作为有源层的遮光结构，例如在基板的底面设置遮光部件。

9. 发明申请

US20060173573A1 Numerical controller 有权
标题翻译：数控机
公开(公告)号：US20060173573A1
公开(公告)日：2006-08-03
申请号：US11345390
申请日：2006-02-02
申请人： Masahiko Hosokawa , Masafumi Sano , Iwao Makino
发明人： Masahiko Hosokawa , Masafumi Sano , Iwao Makino
IPC分类号： G06F19/00
CPC分类号： G05B19/404 , G05B2219/35286 , G05B2219/41119 , G05B2219/42128 , G05B2219/42129 , G05B2219/42132
摘要： A numerical controller capable of obviating the waste of a workpiece by machining such that a position deviation by learning control is converged and automatically performing storage of correction data and actual machining. A tool and the workpiece are moved to noninterfering positions. In a learning control interval from the issuance of a learning control start command to the issuance of a learning control end command, the input and output are turned on so that the learning control is performed to input the position deviation and create and output the correction data. Processing in the learning control interval that involves the learning control is repeatedly executed a set number of times by idling operations. The obtained data is automatically stored in the numerical controller, the tool and the workpiece are moved to interfering positions, and the position deviation is corrected based on the correction data, whereby actual machining is performed. The correction data is automatically stored and the actual machining is performed using the correction data without wasting the workpiece, so that the cycle time can be shortened.
摘要翻译：一种能够通过机械加工消除工件浪费的数值控制器，使得通过学习控制的位置偏差被收敛并自动执行校正数据的存储和实际加工。工具和工件移动到非干扰位置。在从发出学习控制开始命令到发出学习控制结束命令的学习控制间隔中，输入和输出被打开，从而执行学习控制以输入位置偏差并创建和输出校正数据。涉及学习控制的学习控制间隔的处理通过空转操作重复执行一定次数。所获得的数据被自动存储在数字控制器中，工具和工件移动到干涉位置，并且基于校正数据校正位置偏差，从而进行实际加工。校正数据被自动存储，并且使用校正数据执行实际加工，而不浪费工件，从而可以缩短循环时间。

10. 发明申请

US20060108636A1 Amorphous oxide and field effect transistor 有权
公开(公告)号：US20060108636A1
公开(公告)日：2006-05-25
申请号：US11269600
申请日：2005-11-09
申请人： Masafumi Sano , Katsumi Nakagawa , Hideo Hosono , Toshio Kamiya , Kenji Nomura
发明人： Masafumi Sano , Katsumi Nakagawa , Hideo Hosono , Toshio Kamiya , Kenji Nomura
IPC分类号： H01L27/12
CPC分类号： H01L29/78693 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02592 , H01L21/02631 , H01L21/428 , H01L27/1225 , H01L27/124 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

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