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1. 发明授权

US08508011B2 Semiconductor apparatus and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08508011B2
公开(公告)日：2013-08-13
申请号：US13405639
申请日：2012-02-27
申请人： Hiroshi Wayama , Chiori Mochizuki , Minoru Watanabe , Keigo Yokoyama , Masato Ofuji , Jun Kawanabe , Kentaro Fujiyoshi
发明人： Hiroshi Wayama , Chiori Mochizuki , Minoru Watanabe , Keigo Yokoyama , Masato Ofuji , Jun Kawanabe , Kentaro Fujiyoshi
IPC分类号： H01L31/00
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14665 , H01L27/14683
摘要： A semiconductor apparatus including a substrate, a pixel array on the substrate, first and second conductive pads between which the substrate locates is provided. The apparatus also comprises an insulating layer arranged between the substrate and the first conductive pad; a third conductive pad arranged between the substrate and the insulating layer; a first conductive member which passes through the insulating layer and connects the first and third conductive pads to each other; and a second conductive member which passes through the substrate and connects the second and third conductive pads to each other. The pixel array further comprises a conductive line connected to circuit elements included in pixels aligned in a row or column direction. The first conductive pad is connected to the conductive line in an interval between the pixels.
摘要翻译：提供了一种半导体装置，其包括基板，基板上的像素阵列，设置有基板的第一和第二导电焊盘。该设备还包括布置在基板和第一导电焊盘之间的绝缘层; 布置在所述基板和所述绝缘层之间的第三导电焊盘; 第一导电构件，其穿过绝缘层并将第一和第三导电焊盘彼此连接; 以及第二导电构件，其穿过基板并将第二和第三导电焊盘彼此连接。像素阵列还包括连接到包括在以行或列方向排列的像素中的电路元件的导线。第一导电焊盘以像素之间的间隔连接到导电线。

2. 发明授权

US08507910B2 Active matrix display apparatus 有权
标题翻译：主动矩阵显示装置
公开(公告)号：US08507910B2
公开(公告)日：2013-08-13
申请号：US12520944
申请日：2008-01-17
申请人： Masato Ofuji , Katsumi Abe , Masafumi Sano , Hideya Kumomi , Ryo Hayashi
发明人： Masato Ofuji , Katsumi Abe , Masafumi Sano , Hideya Kumomi , Ryo Hayashi
IPC分类号： H01L29/00
CPC分类号： H01L27/3265 , H01L27/3248 , H01L2227/323 , H01L2251/5323
摘要： An active matrix display apparatus includes a transistor, a storage capacitor, and a light-emitting element formed on a substrate. The transistor includes a source electrode, a drain electrode, and a gate electrode. The storage capacitor has a multilayered structure of a first electrode, a dielectric layer, and a second electrode stacked in this order on the substrate, and the light-emitting element has a multilayered structure of a third electrode, a light-emitting layer, and a fourth electrode stacked in this order on the substrate. The first electrode is electrically connected to the gate electrode of the transistor, and at least a part of the storage capacitor is disposed between the substrate and the light-emitting element. All of the substrate, the first electrode, the second electrode, and the third electrode are formed from a material transmitting a visible light emitted by the light-emitting element. Viewing from a top of the substrate, a region for storing charges in the storage capacitor includes or is equal to a light-emitting region of the light-emitting element.
摘要翻译：有源矩阵显示装置包括晶体管，存储电容器和形成在基板上的发光元件。晶体管包括源电极，漏电极和栅电极。存储电容器具有在基板上依次层叠的第一电极，电介质层和第二电极的多层结构，并且发光元件具有第三电极，发光层和多层结构的多层结构在基板上依次层叠的第四电极。第一电极电连接到晶体管的栅电极，并且至少一部分存储电容器设置在基板和发光元件之间。所有的基板，第一电极，第二电极和第三电极由透射由发光元件发出的可见光的材料形成。从基板的顶部观察，用于在存储电容器中存储电荷的区域包括或等于发光元件的发光区域。

3. 发明申请

US20120235270A1 SEMICONDUCTOR APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20120235270A1
公开(公告)日：2012-09-20
申请号：US13405639
申请日：2012-02-27
申请人： Hiroshi Wayama , Chiori Mochizuki , Minoru Watanabe , Keigo Yokoyama , Masato Ofuji , Jun Kawanabe , Kentaro Fujiyoshi
发明人： Hiroshi Wayama , Chiori Mochizuki , Minoru Watanabe , Keigo Yokoyama , Masato Ofuji , Jun Kawanabe , Kentaro Fujiyoshi
IPC分类号： H01L31/0224
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14665 , H01L27/14683
摘要： A semiconductor apparatus including a substrate, a pixel array on the substrate, first and second conductive pads between which the substrate locates is provided. The apparatus also comprises an insulating layer arranged between the substrate and the first conductive pad; a third conductive pad arranged between the substrate and the insulating layer; a first conductive member which passes through the insulating layer and connects the first and third conductive pads to each other; and a second conductive member which passes through the substrate and connects the second and third conductive pads to each other. The pixel array further comprises a conductive line connected to circuit elements included in pixels aligned in a row or column direction. The first conductive pad is connected to the conductive line in an interval between the pixels.
摘要翻译：提供了一种半导体装置，其包括基板，基板上的像素阵列，设置有基板的第一和第二导电焊盘。该设备还包括布置在基板和第一导电焊盘之间的绝缘层; 布置在所述基板和所述绝缘层之间的第三导电焊盘; 第一导电构件，其穿过绝缘层并将第一和第三导电焊盘彼此连接; 以及第二导电构件，其穿过基板并将第二和第三导电焊盘彼此连接。像素阵列还包括连接到包括在以行或列方向排列的像素中的电路元件的导线。第一导电焊盘以像素之间的间隔连接到导电线。

4. 发明申请

US20110101346A1 LIGHT EMITTING DISPLAY APPARATUS 有权
标题翻译：发光显示装置
公开(公告)号：US20110101346A1
公开(公告)日：2011-05-05
申请号：US13001000
申请日：2009-06-30
申请人： Yoshinori Tateishi , Masato Ofuji , Hideya Kumomi , Ryo Hayashi
发明人： Yoshinori Tateishi , Masato Ofuji , Hideya Kumomi , Ryo Hayashi
IPC分类号： H01L27/15
CPC分类号： H01L27/3248 , H01L27/12 , H01L27/3258 , H01L27/3272 , H01L29/24 , H01L29/78633 , H01L29/7869 , H01L29/78693
摘要： There is provided a light emitting display apparatus including at least a light emitting element and a thin film transistor (TFT) for driving the light emitting element, characterized in that a mechanism is provided in which a semiconductor constituting the TFT is irradiated with at least a part of light whose wavelength is longer than a predetermined wavelength among the light emitted by the light emitting element.
摘要翻译：提供一种发光显示装置，至少包括用于驱动发光元件的发光元件和薄膜晶体管（TFT），其特征在于，提供一种机构，其中构成TFT的半导体被至少照射由发光元件发出的光的波长比预定波长长的光的一部分。

5. 发明授权

US07719003B2 Active organic semiconductor devices and methods for making the same 有权
标题翻译：有源半导体器件及其制造方法
公开(公告)号：US07719003B2
公开(公告)日：2010-05-18
申请号：US12002926
申请日：2007-12-19
申请人： Howard Edan Katz , Masato Ofuji
发明人： Howard Edan Katz , Masato Ofuji
IPC分类号： H01L51/00
CPC分类号： H01L51/0013
摘要： Techniques for disposing an organic semiconductor film on a receiver substrate, comprising the steps of: depositing an organic semiconductor film onto a donor substrate, the semiconductor film having a first surface facing the donor substrate and having an exposed second surface; bringing the exposed second surface adjacent a receiver substrate such that the semiconductor film is in contact with both substrates; and then, moving the donor and receiver substrates apart; and wherein a surface portion of the receiver substrate is maintained above its glass transition during the moving step. Active organic semiconductor devices.
摘要翻译：用于在接收器基板上设置有机半导体膜的技术包括以下步骤：在施主衬底上沉积有机半导体膜，所述半导体膜具有面向供体衬底并具有暴露的第二表面的第一表面; 使暴露的第二表面邻近接收器基板，使得半导体膜与两个基板接触; 然后将供体和接收器基板分开; 并且其中所述接收器基板的表面部分在所述移动步骤期间保持在其玻璃化转变以上。活性有机半导体器件。

6. 发明申请

US20100085081A1 INVERTER MANUFACTURING METHOD AND INVERTER 有权
标题翻译：逆变器制造方法和逆变器
公开(公告)号：US20100085081A1
公开(公告)日：2010-04-08
申请号：US12597211
申请日：2008-05-15
申请人： Masato Ofuji , Katsumi Abe , Ryo Hayashi , Masafumi Sano , Hideya Kumomi
发明人： Masato Ofuji , Katsumi Abe , Ryo Hayashi , Masafumi Sano , Hideya Kumomi
IPC分类号： H03K19/20 , H03K19/0944 , H01L21/8254 , H01L21/8236 , H01L21/42
CPC分类号： H01L29/7869 , H01L27/1233
摘要： To provide an enhancement-depletion (E/D) inverter which can be easily manufactured, in the present invention, a method of manufacturing an inverter which is composed of an oxide semiconductor in which a channel layer includes at least one element selected from In, Ga and Zn formed on a same substrate, the inverter being the E/D inverter having plural thin film transistors, is characterized by comprising the steps of: forming a first transistor and a second transistor, the thicknesses of the channel layers of the first and second transistors being mutually different; and executing heat treatment to at least one of the channel layers of the first and second transistors.
摘要翻译：为了提供易于制造的增强耗尽（E / D）逆变器，在本发明中，制造由氧化物半导体构成的逆变器的制造方法，其中沟道层包括选自In， Ga和Zn形成在同一衬底上，所述逆变器是具有多个薄膜晶体管的E / D逆变器，其特征在于包括以下步骤：形成第一晶体管和第二晶体管，第一和第二晶体管的沟道层的厚度第二晶体管是相互不同的; 以及对所述第一和第二晶体管的至少一个沟道层执行热处理。

7. 发明授权

US09190437B2 Semiconductor detection apparatus capable of switching capacitance among different levels, and detection system including the apparatus 有权
标题翻译：能够切换不同层次的电容的半导体检测装置，以及包括该装置的检测系统
公开(公告)号：US09190437B2
公开(公告)日：2015-11-17
申请号：US13610472
申请日：2012-09-11
申请人： Jun Kawanabe , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Kentaro Fujiyoshi , Hiroshi Wayama
发明人： Jun Kawanabe , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Kentaro Fujiyoshi , Hiroshi Wayama
IPC分类号： H01J40/14 , H01L27/146
CPC分类号： H01L27/14609 , H01L27/14665
摘要： A detection apparatus includes a transistor disposed on a substrate, a conversion element disposed above the transistor and connected to the transistor, a capacitor connected in parallel with conversion element to the transistor, the capacitor including, between the substrate and the conversion element, an ohmic contact part connected to the conversion element, a semiconductor part connected to the ohmic contact part, and an electrically conductive part disposed at a location opposite to the semiconductor part and the ohmic contact part via an insulating layer, and a potential supplying unit configured to selectively supply a first electric potential to the electrically conductive part to accumulate charge carriers in the semiconductor part and a second electric potential to the electrically conductive part to deplete the semiconductor part. The detection apparatus configured in the above-described manner is capable of controlling pixel capacitance thereby achieving a high signal-to-noise ratio.
摘要翻译：检测装置包括设置在基板上的晶体管，设置在晶体管上方并连接到晶体管的转换元件，与转换元件并联连接到晶体管的电容器，电容器包括在基板和转换元件之间的欧姆连接到转换元件的接触部分，连接到欧姆接触部分的半导体部分和经由绝缘层设置在与半导体部分和欧姆接触部分相对的位置处的导电部分，以及电位供给单元，被配置为选择性地向导电部分提供第一电位，以将半导体部件中的电荷载流子积累，并且向导电部件累积第二电位以耗尽半导体部件。以上述方式配置的检测装置能够控制像素电容，从而实现高的信噪比。

8. 发明申请

US20120306041A1 DETECTION DEVICE MANUFACTURING METHOD, DETECTION DEVICE, AND DETECTION SYSTEM 有权
标题翻译：检测装置制造方法，检测装置和检测系统
公开(公告)号：US20120306041A1
公开(公告)日：2012-12-06
申请号：US13477401
申请日：2012-05-22
申请人： Kentaro Fujiyoshi , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Jun Kawanabe , Hiroshi Wayama
发明人： Kentaro Fujiyoshi , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Jun Kawanabe , Hiroshi Wayama
IPC分类号： H01L31/0224
CPC分类号： H01L27/1461 , H01L27/1462 , H01L27/14676 , H01L27/14685 , H01L27/14692
摘要： In a method of manufacturing a detection device including pixels on a substrate, each pixel including a switch element and a conversion element including an impurity semiconductor layer on an electrode, which is disposed above the switch element and isolated per pixel, the switch element and the electrode being connected in a contact hole formed in a protection layer and an interlayer insulating layer, which are disposed between the switch elements and the electrodes, the method includes forming insulating members over the interlayer insulating layer between the electrodes in contact with the interlayer insulating layer, forming an impurity semiconductor film covering the insulating members and the electrodes, and forming a coating layer covering an area of the protection layer where an orthographically-projected image of a portion of the electrode is positioned, the portion including a level difference within the contact hole.
摘要翻译：在制造包括衬底上的像素的检测装置的方法中，每个像素包括开关元件和包括电极上的杂质半导体层的转换元件，该电容器设置在开关元件上方并且每像素隔离开关元件和电极被连接在形成在保护层和层间绝缘层中的接触孔中，所述接触孔设置在开关元件和电极之间，该方法包括在与层间绝缘层接触的电极之间的层间绝缘层上形成绝缘构件形成覆盖所述绝缘构件和所述电极的杂质半导体膜，以及形成覆盖所述电极的一部分的正投影像的所述保护层的区域的覆盖层，所述部分包括所述触点内的电平差孔。

9. 发明申请

US20120305785A1 DETECTION DEVICE MANUFACTURING METHOD, DETECTION DEVICE, AND DETECTION SYSTEM 有权
标题翻译：检测装置制造方法，检测装置和检测系统
公开(公告)号：US20120305785A1
公开(公告)日：2012-12-06
申请号：US13477472
申请日：2012-05-22
申请人： Kentaro Fujiyoshi , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Jun Kawanabe , Hiroshi Wayama
发明人： Kentaro Fujiyoshi , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Jun Kawanabe , Hiroshi Wayama
IPC分类号： G01T1/24 , H01L27/14 , H01L31/18
CPC分类号： H01L27/14687 , H01L27/14609 , H01L27/1463 , H01L27/14676
摘要： In a method of manufacturing a detection device including a plurality of pixels arrayed on a substrate, the pixels each including a switch element and a conversion element including an impurity semiconductor layer disposed on an electrode, which is disposed above the switch element, which is isolated per pixel, and which is made of a transparent conductive oxide joined to the switch element, and further including an interlayer insulating layer, which is made of an organic material, which is disposed between the switch elements and the electrodes, and which covers the switch elements, the method includes insulating members each made of an inorganic material and disposed to cover the interlayer insulating layer between adjacent two of the electrodes in contact with the interlayer insulating layer, and forming an impurity semiconductor film covering the insulating members and the electrodes and becoming the impurity semiconductor layer.
摘要翻译：在制造包括排列在基板上的多个像素的检测装置的方法中，每个像素包括开关元件和转换元件，转换元件包括设置在开关元件上方的电极上的杂质半导体层，该杂质半导体层被隔离并且由连接到开关元件的透明导电氧化物制成，并且还包括设置在开关元件和电极之间的由有机材料制成并且覆盖开关的层间绝缘层元件，该方法包括各自由无机材料制成的绝缘构件，并设置成覆盖与层间绝缘层接触的相邻的两个电极之间的层间绝缘层，并且形成覆盖绝缘构件和电极的杂质半导体膜，并成为杂质半导体层。

10. 发明申请

US20110062441A1 SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS 有权
标题翻译：半导体器件和显示器
公开(公告)号：US20110062441A1
公开(公告)日：2011-03-17
申请号：US12992071
申请日：2009-05-11
申请人： Hisato Yabuta , Masato Ofuji , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko , Ryo Hayashi
发明人： Hisato Yabuta , Masato Ofuji , Yasuyoshi Takai , Takehiko Kawasaki , Norio Kaneko , Ryo Hayashi
IPC分类号： H01L33/08 , H01L33/16 , H01L33/26
CPC分类号： H01L29/78645 , H01L29/78633
摘要： Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism.
摘要翻译：提供一种半导体器件，其包括至少包含半导体作为元件的半导体元件，其特征在于包括：用于使波长比半导体的吸收边缘波长长的光照射半导体的机构; 以及调光机构，其设置在光通过的光路的一部分中，用于调节从强度，照射时间和光的波长选择的至少一个因素，其中半导体元件的阈值电压被改变光由调光机构调节。

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