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1. 发明申请

US20120044234A1 PLASMA DISPLAY DEVICE AND DRIVING APPARATUS THEREOF 失效
标题翻译：等离子体显示装置及其驱动装置
公开(公告)号：US20120044234A1
公开(公告)日：2012-02-23
申请号：US12965811
申请日：2010-12-10
申请人： Suk-Ki Kim , Sang-Hun Park , Kwan-Il Oh , Sang-Chul Kim
发明人： Suk-Ki Kim , Sang-Hun Park , Kwan-Il Oh , Sang-Chul Kim
IPC分类号： G09G5/00 , G09G3/28
CPC分类号： G09G3/2965 , G09G3/294 , G09G2330/021 , G09G2330/028
摘要： In a plasma display device, a secondary coil of a transformer is connected across a panel capacitor formed by a scan electrode and a sustain electrode performing a sustain discharge. The plasma display device uses resonance between a secondary coil of a transformer and a panel capacitor to apply a sustain discharge pulse to a scan electrode and a sustain electrode in a sustain period.
摘要翻译：在等离子体显示装置中，变压器的次级线圈跨越由扫描电极和执行维持放电的维持电极形成的面板电容器连接。等离子体显示装置使用变压器的次级线圈与面板电容器之间的谐振，以在维持期间向扫描电极和维持电极施加维持放电脉冲。

2. 发明授权

US07682965B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07682965B2
公开(公告)日：2010-03-23
申请号：US11604921
申请日：2006-11-27
申请人： Sang Chul Kim , Han Choon Lee
发明人： Sang Chul Kim , Han Choon Lee
IPC分类号： H01L21/4763
CPC分类号： H01L21/76886 , H01L21/02074
摘要： Provided is a method for manufacturing a semiconductor device. An insulation layer is formed on a bottom structure of a semiconductor substrate. Then, a trench and a via hole are formed by selectively etching the insulation layer, and a copper layer is deposited to fill the via hole and the trench. Next, a copper line is formed by a CMP (chemical mechanical polishing) process to planarize the copper layer, and a plasma process is performed to form a plasma-treated surface layer of the semiconductor substrate. The plasma-treated surface layer is then removed.
摘要翻译：提供一种半导体器件的制造方法。绝缘层形成在半导体衬底的底部结构上。然后，通过选择性地蚀刻绝缘层形成沟槽和通孔，并且沉积铜层以填充通孔和沟槽。接下来，通过CMP（化学机械抛光）工艺形成铜线以使铜层平坦化，并且进行等离子体处理以形成半导体衬底的等离子体处理的表面层。然后除去等离子体处理的表面层。

3. 发明授权

US07541279B2 Method for manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07541279B2
公开(公告)日：2009-06-02
申请号：US11615105
申请日：2006-12-22
申请人： Sang Chul Kim , Jae Won Han
发明人： Sang Chul Kim , Jae Won Han
IPC分类号： H01L21/20
CPC分类号： H01L21/76874 , C25D3/38 , C25D3/58 , C25D5/022 , C25D7/123 , H01L21/2885 , H01L21/76877
摘要： A method for manufacturing a semiconductor device is provided. The method includes the steps of forming an interlayer insulating layer on a semiconductor substrate, selectively patterning the interlayer insulating layer to form a contact hole, depositing a first metal on an inner surface of the contact hole, submerging the semiconductor substrate on which the first metal is deposited into an electrochemical plating (ECP) solution bath in which a second metal is dissolved, dissolving the first metal in the ECP solution bath, plating the first and second metals dissolved in the ECP solution bath at the same time to gap-fill an alloy of the first and second metals in the contact hole, and removing the alloy using the interlayer insulating layer as an end point in a CMP process to form an alloy interconnection.
摘要翻译：提供一种制造半导体器件的方法。该方法包括以下步骤：在半导体衬底上形成层间绝缘层，选择性地图案化层间绝缘层以形成接触孔;在接触孔的内表面上沉积第一金属;浸没第一金属沉积到其中溶解有第二金属的电化学电镀（ECP）溶液浴中，将第一金属溶解在ECP溶液浴中，同时电镀溶解在ECP溶液浴中的第一和第二金属以间隙填充接触孔中的第一和第二金属的合金，并且在CMP工艺中使用层间绝缘层作为终点去除合金以形成合金互连。

4. 发明申请

US20090001584A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090001584A1
公开(公告)日：2009-01-01
申请号：US12142923
申请日：2008-06-20
申请人： Sang-Chul Kim
发明人： Sang-Chul Kim
IPC分类号： H01L21/768 , H01L23/532
CPC分类号： H01L23/5226 , H01L21/76805 , H01L21/76844 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a semiconductor device that may include at least one of the following steps: Forming a lower metal wiring on and/or over a semiconductor substrate. Forming an interlayer insulating film having a damascene hole on and/or over the semiconductor substrate and the lower metal wiring. Forming an anti-diffusion film on and/or over the exposed lower metal wiring below the damascene hole and/or on side surfaces of the damascene hole. Selectively removing the anti-diffusion film formed on and/or over the exposed lower metal wiring at the bottom of the damascene hole using a plasma process that uses an inert gas.
摘要翻译：一种制造半导体器件的方法，其可以包括以下步骤中的至少一个：在半导体衬底上和/或上方形成下部金属布线。在半导体衬底和/或下部金属布线上形成具有镶嵌孔的层间绝缘膜。在镶嵌孔下面和/或在镶嵌孔的侧面上的暴露的下金属布线上和/或上方形成防扩散膜。使用惰性气体的等离子体工艺，选择性地去除在镶嵌孔底部露出的下部金属布线上和/或上方形成的抗扩散膜。

5. 发明申请

US20080284023A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING BOAC/COA 审中-公开
标题翻译：半导体器件及制造BOAC / COA的方法
公开(公告)号：US20080284023A1
公开(公告)日：2008-11-20
申请号：US12120943
申请日：2008-05-15
申请人： Sang-Chul Kim
发明人： Sang-Chul Kim
IPC分类号： H01L23/532 , H01L21/768
CPC分类号： H01L24/12 , H01L24/03 , H01L24/05 , H01L24/11 , H01L2224/0381 , H01L2224/03912 , H01L2224/0401 , H01L2224/056 , H01L2224/114 , H01L2224/1147 , H01L2224/116 , H01L2224/11912 , H01L2224/13147 , H01L2224/16 , H01L2924/00013 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01059 , H01L2924/01078 , H01L2924/3025 , Y10T428/12528 , H01L2924/00014 , H01L2224/13099
摘要： A BOAC/COA of a semiconductor device is manufactured by forming a conductive pad over a semiconductor device, forming a passivation oxide film over the semiconductor device including the conductive pad, forming an oxide film over the entire surface of the conductive pad and the passivation oxide film, forming an oxide film pattern defining a bond pad region on the conductive pad, sequentially forming a barrier film and a metal seed layer over the oxide film pattern, the passivation oxide film and the conductive pad, forming a metal layer over the metal seed layer, planarizing the metal layer exposing the oxide film pattern and portions of the barrier film and the metal seed layer, and removing the oxide film pattern by an etching process.
摘要翻译：通过在半导体器件上形成导电焊盘来制造半导体器件的BOAC / COA，在包括导电焊盘的半导体器件上形成钝化氧化膜，在导电焊盘的整个表面上形成氧化膜，并且钝化氧化物在所述导电焊盘上形成限定焊盘区域的氧化膜图案，在所述氧化膜图案上依次形成阻挡膜和金属籽晶层，所述钝化氧化物膜和所述导电焊盘在所述金属种子上形成金属层使暴露氧化膜图案的金属层和阻挡膜和金属种子层的部分平坦化，并通过蚀刻工艺除去氧化膜图案。

6. 发明申请

US20080083625A1 Method for Manufacturing Semiconductor Device 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：US20080083625A1
公开(公告)日：2008-04-10
申请号：US11863488
申请日：2007-09-28
申请人： SANG CHUL KIM
发明人： SANG CHUL KIM
IPC分类号： C25D7/12 , H01L21/311
CPC分类号： H01L21/02068 , C23C28/023 , C23C28/322 , C23C28/34 , C23C28/3455 , C25D5/02 , C25D7/12 , H01L21/76843 , H01L21/76861 , H01L21/76873
摘要： A method for manufacturing a semiconductor device is provided. The method can include forming a pattern for a copper line on a semiconductor substrate, forming a barrier metal layer on the pattern, removing a natural oxide layer from the barrier metal layer using a basic compound, and depositing copper ions on the barrier metal layer. A copper seed layer is not necessary.
摘要翻译：提供一种制造半导体器件的方法。该方法可以包括在半导体衬底上形成用于铜线的图案，在图案上形成阻挡金属层，使用碱性化合物从阻挡金属层除去天然氧化物层，以及在阻挡金属层上沉积铜离子。铜籽层不是必需的。

7. 发明授权

US09008190B2 Apparatus for processing images and method thereof 有权
标题翻译：图像处理装置及其方法
公开(公告)号：US09008190B2
公开(公告)日：2015-04-14
申请号：US12651730
申请日：2010-01-04
申请人： Kun-Sik Lee , Yoon-Jung Kim , Hae-Jin Bae , Gyu-Seung Kim , Sang-Chul Kim , Sang-Kil Park , Jae-Kyung Lee , Jin-Gyeong Kim , Tae-Il Chung
发明人： Kun-Sik Lee , Yoon-Jung Kim , Hae-Jin Bae , Gyu-Seung Kim , Sang-Chul Kim , Sang-Kil Park , Jae-Kyung Lee , Jin-Gyeong Kim , Tae-Il Chung
IPC分类号： H04N7/18 , H04N21/4402 , H04N5/445 , H04N21/482 , H04N21/426 , H04N21/475
CPC分类号： H04N21/440263 , H04N5/445 , H04N21/4263 , H04N21/4755 , H04N21/482
摘要： An apparatus for processing images may include a de-multiplexer that receives a data stream and de-multiplexes a video signal and channel information from the data stream, a first decoder that provides a decoded video signal, a thumbnail generator coupled to the first decoder to generate at least one of a still picture thumbnail or a moving picture thumbnail based on the decoded video signal, and an encoder coupled to the thumbnail generator and the de-multiplexer. The encoder encodes the thumbnail with the channel information to provide a thumbnail data stream to provide thumbnails of moving pictures and/or still pictures on a display.
摘要翻译：用于处理图像的装置可以包括解复用器，其接收数据流并且从数据流解码多路复用视频信号和信道信息，提供解码视频信号的第一解码器，耦合到第一解码器的缩略图生成器基于解码的视频信号生成静止图像缩略图或运动图像缩略图中的至少一个，以及耦合到缩略图生成器和解复用器的编码器。编码器利用频道信息对缩略图进行编码以提供缩略图数据流，以在显示器上提供运动图像和/或静止图像的缩略图。

8. 发明授权

US07875843B2 Color filters and method of fabricating the same in image sensor 失效
标题翻译：彩色滤光片及其在图像传感器中的制造方法
公开(公告)号：US07875843B2
公开(公告)日：2011-01-25
申请号：US12203183
申请日：2008-09-03
申请人： Sang-Chul Kim
发明人： Sang-Chul Kim
IPC分类号： G01J3/50
CPC分类号： H01L27/14621 , H01L27/14623
摘要： An image sensor and a method for fabricating the same having enhanced sensivity. The image sensor enhances sensitivity and minimizes optical loss by isolating color filters from each other using a metal that has superior light reflection properties while having no effect on the color filters during deposition of the metal.
摘要翻译：一种具有增强的感光度的图像传感器及其制造方法。图像传感器通过使用具有优异的光反射性能的金属彼此隔离滤色器来增强灵敏度并使光损失最小化，同时在金属沉积期间对滤色器没有影响。

9. 发明申请

US20100164090A1 SEMICONDUCTOR PACKAGE APPARATUS AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体封装设备及其制造方法
公开(公告)号：US20100164090A1
公开(公告)日：2010-07-01
申请号：US12647500
申请日：2009-12-27
申请人： Sang-Chul Kim
发明人： Sang-Chul Kim
IPC分类号： H01L23/49 , B23K31/00 , H01L23/498
CPC分类号： H01L25/50 , H01L24/16 , H01L24/32 , H01L24/73 , H01L25/0657 , H01L2224/0401 , H01L2224/0579 , H01L2224/05799 , H01L2224/13144 , H01L2224/16145 , H01L2224/16225 , H01L2224/2919 , H01L2224/32145 , H01L2224/73204 , H01L2224/81903 , H01L2224/83851 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06562 , H01L2924/01006 , H01L2924/01033 , H01L2924/01047 , H01L2924/01079 , H01L2924/00014 , H01L2924/0665 , H01L2924/00
摘要： A semiconductor package apparatus includes a first semiconductor chip bonded onto a substrate of which metal wire turning upward; and a second semiconductor chip conductively bonded onto the first semiconductor chip in a vertical direction such that a metal wire of the second semiconductor chip and the metal wire of the first semiconductor chip have facing points. The semiconductor package apparatus includes a third semiconductor chip conductively bonded onto the first semiconductor chip in the vertical direction to be disposed horizontally with the second semiconductor chip such that a metal wire of the third semiconductor chip and the metal wire of the first semiconductor chip have facing points.
摘要翻译：一种半导体封装装置，包括：接合在金属线向上方转动的基板上的第一半导体芯片; 以及第二半导体芯片，其在垂直方向上导电地接合到第一半导体芯片上，使得第二半导体芯片的金属线和第一半导体芯片的金属线具有面对点。半导体封装装置包括：第三半导体芯片，其在垂直方向上导电地接合到第一半导体芯片上，以与第二半导体芯片水平配置，使得第三半导体芯片的金属线和第一半导体芯片的金属线具有面对积分

10. 发明申请

US20100112807A1 METHOD OF FORMING METAL WIRING OF SEMICONDUCTOR DEVICE 审中-公开
标题翻译：形成半导体器件金属接线的方法
公开(公告)号：US20100112807A1
公开(公告)日：2010-05-06
申请号：US12608052
申请日：2009-10-29
申请人： Sang-Chul Kim
发明人： Sang-Chul Kim
IPC分类号： H01L21/768 , H01L21/31
CPC分类号： H01L21/02063 , H01L21/76814
摘要： A method of forming a metal wiring of a semiconductor device, and devices thereof. A method of forming a metal wiring, and devices thereof, may maximize semiconductor yield by substantially removing oxide on and/or over a trench and/or by substantially removing a by-product that may remain on and/or over a surface of a wafer. A method of forming a metal wiring of a semiconductor may include forming a dielectric layer on and/or over a metal wiring. A method of forming a metal wiring of a semiconductor may include forming a contact hole, which may expose a partial surface of metal wiring, on and/or over a dielectric layer. A method of forming a metal wiring of a semiconductor may include performing an oxide removing process on and/or over an inner side of a contact hole, and/or performing a by-product removing process on and/or over an inner side wall of a trench.
摘要翻译：一种形成半导体器件的金属布线的方法及其装置。形成金属布线的方法及其装置可通过基本上除去沟槽上和/或沟槽上的氧化物和/或通过基本上除去可能保留在晶片表面上和/或上方的副产物而使半导体产量最大化。形成半导体的金属布线的方法可以包括在金属布线上和/或上方形成电介质层。形成半导体的金属布线的方法可以包括在电介质层上和/或上方形成可能暴露金属布线的部分表面的接触孔。形成半导体的金属布线的方法可以包括在接触孔的内侧上和/或上方对接触孔的内侧进行氧化物去除处理，和/或在内侧壁上和/ 一个沟槽

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