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1. 发明授权

US08671879B2 Systems and methods for plasma processing of microfeature workpieces 有权
标题翻译：微型工件等离子体处理的系统和方法
公开(公告)号：US08671879B2
公开(公告)日：2014-03-18
申请号：US12352033
申请日：2009-01-12
申请人： Shu Qin , Allen McTeer
发明人： Shu Qin , Allen McTeer
IPC分类号： C23F1/08 , C23C16/513 , C23C16/52
CPC分类号： H01J37/32917 , C23C14/54 , C23C16/52 , G01N21/73 , H01J37/32935 , H01J37/32972
摘要： Systems and methods for plasma processing of microfeature workpieces are disclosed herein. In one embodiment, a method includes generating a plasma in a chamber while a microfeature workpiece is positioned in the chamber, measuring optical emissions from the plasma, and determining a parameter of the plasma based on the measured optical emissions. The parameter can be an ion density or another parameter of the plasma.
摘要翻译：本文公开了微型工件的等离子体处理的系统和方法。在一个实施例中，一种方法包括在微型工件位于腔室中的同时在腔室中产生等离子体，测量等离子体的光发射，以及基于所测量的光发射来确定等离子体的参数。该参数可以是等离子体的离子密度或其他参数。

2. 发明授权

US08642135B2 Systems and methods for plasma doping microfeature workpieces 有权
标题翻译：等离子体掺杂微型工件的系统和方法
公开(公告)号：US08642135B2
公开(公告)日：2014-02-04
申请号：US11217882
申请日：2005-09-01
申请人： Shu Qin , Allen McTeer
发明人： Shu Qin , Allen McTeer
IPC分类号： C23C14/14 , C23C14/48 , C23C16/503 , C23C16/505 , C23C16/515 , H05H1/46 , H01L21/265 , C23C14/16
CPC分类号： C23C14/48 , C23C14/16 , C23C16/28 , C23C16/515 , C23C16/517 , H01J37/32412 , H01L21/2236 , Y10S438/914
摘要： Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece.
摘要翻译：本文公开了等离子体掺杂微型工件的系统和方法。在一个实施例中，将硼离子注入到工件的区域中的方法包括在腔室中产生等离子体，以大约20％至大约50％的占空比选择性地将脉冲电势施加到工件，并且植入离子种类进入工件的区域。

3. 发明申请

US20120108042A1 Methods Of Forming Doped Regions In Semiconductor Substrates 有权
标题翻译：在半导体衬底中形成掺杂区域的方法
公开(公告)号：US20120108042A1
公开(公告)日：2012-05-03
申请号：US12938845
申请日：2010-11-03
申请人： Jennifer Lequn Liu , Shu Qin , Allen McTeer , Yongjun Jeff Hu
发明人： Jennifer Lequn Liu , Shu Qin , Allen McTeer , Yongjun Jeff Hu
IPC分类号： H01L21/322
CPC分类号： H01L21/2236 , H01L21/26506 , H01L21/2652 , H01L21/26526 , H01L29/66575
摘要： Some embodiments include methods of forming one or more doped regions in a semiconductor substrate. Plasma doping may be used to form a first dopant to a first depth within the substrate. The first dopant may then be impacted with a second dopant to knock the first dopant to a second depth within the substrate. In some embodiments the first dopant is p-type (such as boron) and the second dopant is neutral type (such as germanium). In some embodiments the second dopant is heavier than the first dopant.
摘要翻译：一些实施例包括在半导体衬底中形成一个或多个掺杂区域的方法。可以使用等离子体掺杂来形成第一掺杂剂到衬底内的第一深度。然后可以用第二掺杂剂冲击第一掺杂剂以将第一掺杂剂敲入衬底内的第二深度。在一些实施方案中，第一掺杂剂是p型（例如硼），第二掺杂剂是中性型（例如锗）。在一些实施方案中，第二掺杂剂比第一掺杂剂重。

4. 发明授权

US07935618B2 Sputtering-less ultra-low energy ion implantation 有权
标题翻译：无溅射超低能离子注入
公开(公告)号：US07935618B2
公开(公告)日：2011-05-03
申请号：US11861665
申请日：2007-09-26
申请人： Shu Qin , Li Li
发明人： Shu Qin , Li Li
IPC分类号： H01L21/425
CPC分类号： H01L21/2652 , H01L21/266
摘要： Methods of implanting dopants into a silicon substrate using a predeposited sacrificial material layer with a defined thickness that is removed by sputtering effect is provided.
摘要翻译：提供了使用预定沉积的具有通过溅射效应去除的厚度的牺牲材料层将掺杂剂注入到硅衬底中的方法。

5. 发明授权

US07810214B2 Automatically opening hinge assembly for portable electronic devices 有权
标题翻译：自动打开便携式电子设备的铰链组件
公开(公告)号：US07810214B2
公开(公告)日：2010-10-12
申请号：US11946336
申请日：2007-11-28
申请人： An-Ming Feng , Rui-Hao Chen , Zhong-Shu Qin , Ye Liu , Chih-Wei Su , Hsiao-Hua Tu
发明人： An-Ming Feng , Rui-Hao Chen , Zhong-Shu Qin , Ye Liu , Chih-Wei Su , Hsiao-Hua Tu
IPC分类号： E05D11/10
CPC分类号： H04M1/0216 , Y10T16/53883 , Y10T16/53888 , Y10T16/540255 , Y10T16/5406
摘要： A hinge assembly (200) includes a housing (12), a shaft (11), a fixing pin (14), a transposition mechanism (13) and a first spring (16). The housing has a circumferential wall defining a manual slot (121) and an automatic slot (123). Each of the manual slot and the automatic slot runs through a circumferential wall thereof. The shaft defines a pin hole (1141), and the shaft is engaged in the housing. The fixing pin passes through the pin hole of the shaft. One end of the fixing pin is alternatively received in the manual slot or the automatic slot. The transposition mechanism is configured for switching the pin from the manual slot to the automatic slot. The first spring provides an elastic force causing the housing to move relative to the shaft when the pin breaks away from the manual slot.
摘要翻译：铰链组件（200）包括壳体（12），轴（11），固定销（14），换位机构（13）和第一弹簧（16）。壳体具有限定手动槽（121）和自动槽（123）的圆周壁。手动插槽和自动插槽中的每一个都穿过其周向壁。轴限定销孔（1141），并且轴接合在壳体中。固定销通过轴的销孔。固定销的一端可选地接收在手动插槽或自动插槽中。移位机构配置为将引脚从手动插槽切换到自动插槽。第一弹簧提供弹性力，使得当销从手动槽中脱离时，壳体相对于轴移动。

6. 发明授权

US07682930B2 Method of forming elevated photosensor and resulting structure 有权
标题翻译：形成升高的光电传感器和结果的方法
公开(公告)号：US07682930B2
公开(公告)日：2010-03-23
申请号：US11449743
申请日：2006-06-09
申请人： Saijin Liu , Shu Qin
发明人： Saijin Liu , Shu Qin
IPC分类号： H01L31/09 , H01L31/18 , H01L21/00
CPC分类号： H01L27/14634 , H01L21/76254 , H01L27/1469
摘要： Elevated crystal silicon photosensors for imagers pixels, each photosensor formed of crystal silicon above the surface of a substrate that has pixel circuitry formed thereon. The imager has a high fill factor and good imaging properties due to the crystal silicon photosensor.
摘要翻译：用于成像器像素的升高的晶体硅光电传感器，每个光电传感器由其上形成有像素电路的衬底表面上的晶体硅形成。由于晶体硅光电传感器，成像器具有高填充因子和良好的成像性能。

7. 发明申请

US20070048453A1 Systems and methods for plasma doping microfeature workpieces 有权
标题翻译：等离子体掺杂微型工件的系统和方法
公开(公告)号：US20070048453A1
公开(公告)日：2007-03-01
申请号：US11217882
申请日：2005-09-01
申请人： Shu Qin , Allen McTeer
发明人： Shu Qin , Allen McTeer
IPC分类号： C23C14/00 , H05H1/24 , H01J7/24 , C23C16/00 , B05C11/00
CPC分类号： C23C14/48 , C23C14/16 , C23C16/28 , C23C16/515 , C23C16/517 , H01J37/32412 , H01L21/2236 , Y10S438/914
摘要： Systems and methods for plasma doping microfeature workpieces are disclosed herein. In one embodiment, a method of implanting boron ions into a region of a workpiece includes generating a plasma in a chamber, selectively applying a pulsed electrical potential to the workpiece with a duty cycle of between approximately 20 percent and approximately 50 percent, and implanting an ion specie into the region of the workpiece.
摘要翻译：本文公开了等离子体掺杂微型工件的系统和方法。在一个实施例中，将硼离子注入到工件的区域中的方法包括在腔室中产生等离子体，以大约20％至大约50％的占空比选择性地向工件施加脉冲电势，并且植入离子种类进入工件的区域。

8. 发明申请

US20070026297A1 Battery cover latching mechanism for portable electronic device 审中-公开
标题翻译：便携式电子设备的电池盖闭锁机构
公开(公告)号：US20070026297A1
公开(公告)日：2007-02-01
申请号：US11416302
申请日：2006-05-01
申请人： Zhong-Shu Qin , Rui-Hao Chen , Hsiao-Hua Tu , Chia-Hua Chen
发明人： Zhong-Shu Qin , Rui-Hao Chen , Hsiao-Hua Tu , Chia-Hua Chen
IPC分类号： H01M2/10
CPC分类号： H01M2/1066
摘要： A battery cover latching mechanism (300) is used in a portable electronic device. The portable electronic device has a housing (10) and a battery cover (20). The battery cover latching mechanism comprises a fixing portion (206) formed on the battery cover, a locking member (30) and a switch (40). The locking member is mounted on the housing and slidable between a first position where the locking member engages with the housing and the battery cover and a second position where the locking member detaches with the housing and the battery cover relative to the housing. The switch is rotatably mounted on the housing. The switch engages with the locking member. The rotation of the switch urges the locking member to slide from the first position to a second position.
摘要翻译：在便携式电子设备中使用电池盖闭锁机构（300）。便携式电子设备具有壳体（10）和电池盖（20）。电池盖闭锁机构包括形成在电池盖上的固定部分（206），锁定构件（30）和开关（40）。锁定构件安装在壳体上并可在第一位置和第二位置之间滑动，第一位置与锁定构件与壳体和电池盖接合，锁定构件与壳体和电池盖相对于壳体分离的第二位置。开关可旋转地安装在壳体上。开关与锁定构件接合。开关的旋转促使锁定构件从第一位置滑动到第二位置。

9. 发明申请

US20060084262A1 Low-k dielectric process for multilevel interconnection using microcavity engineering during electric circuit manufacture 有权
标题翻译：在电路制造过程中使用微腔工程进行多层互连的低k介质工艺
公开(公告)号：US20060084262A1
公开(公告)日：2006-04-20
申请号：US10968786
申请日：2004-10-18
申请人： Shu Qin
发明人： Shu Qin
IPC分类号： H01L21/461
CPC分类号： H01L21/7682 , H01L23/5222 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： One embodiment of a method for forming a low-k dielectric for a semiconductor device assembly comprises forming a silicon dioxide layer, then forming a patterned masking layer such as silicon nitride on the silicon dioxide. Using the patterned nitride layer as a pattern, the silicon dioxide is etched to form a plurality of hemispherical microcavities in the silicon dioxide. Openings in the patterned nitride are filled, then another layer is formed over the silicon nitride layer using the silicon nitride as a support over the microcavities. An inventive structure resulting from the method is also described.
摘要翻译：用于形成用于半导体器件组件的低k电介质的方法的一个实施例包括形成二氧化硅层，然后在二氧化硅上形成诸如氮化硅的图案化掩模层。使用图案化的氮化物层作为图案，蚀刻二氧化硅以在二氧化硅中形成多个半球形微腔。填充图案化氮化物中的开口，然后使用氮化硅作为微腔上的载体，在氮化硅层上形成另一层。还描述了由该方法产生的创造性结构。

10. 发明授权

US06905984B2 MEMS based contact conductivity electrostatic chuck 失效
标题翻译：基于MEMS的接触导电静电卡盘
公开(公告)号：US06905984B2
公开(公告)日：2005-06-14
申请号：US10683679
申请日：2003-10-10
申请人： Peter L. Kellerman , Shu Qin , Ernie Allen , Douglas A. Brown
发明人： Peter L. Kellerman , Shu Qin , Ernie Allen , Douglas A. Brown
IPC分类号： H01L21/683 , H01L21/00
CPC分类号： H01L21/6831 , Y10S438/964
摘要： The present invention is directed to a method for clamping and processing a semiconductor substrate using a semiconductor processing apparatus. According to one aspect of the present invention, a multi-polar electrostatic chuck and associated method is disclosed which provides heating or cooling of a substrate by thermal contact conduction between the electrostatic chuck and the substrate. The multi-polar electrostatic chuck includes a semiconductor platform having a plurality of protrusions that define gaps therebetween, wherein a surface roughness of the plurality of protrusions is less than 100 Angstroms. The electrostatic chuck further includes a voltage control system operable to control a voltage applied to the electrostatic chuck to thus control a contact heat transfer coefficient of the electrostatic chuck, wherein the heat transfer coefficient of the electrostatic chuck is primarily a function of a contact pressure between the substrate and the plurality of protrusions.
摘要翻译：本发明涉及使用半导体处理装置夹持和处理半导体衬底的方法。根据本发明的一个方面，公开了一种多极静电卡盘和相关方法，其通过静电卡盘和基板之间的热接触传导来提供加热或冷却基板。多极静电卡盘包括具有多个突起的半导体平台，所述突起在其间形成间隙，其中多个突起的表面粗糙度小于100埃。静电卡盘还包括电压控制系统，其可操作以控制施加到静电卡盘的电压，从而控制静电卡盘的接触传热系数，其中静电卡盘的传热系数主要是介于静电卡盘之间的接触压力的函数基板和多个突起。

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