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1. 发明授权

US09209311B2 Thin film transistor and method for manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US09209311B2
公开(公告)日：2015-12-08
申请号：US13410892
申请日：2012-03-02
申请人： Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Yujiro Hara , Shuichi Uchikoga
发明人： Tomomasa Ueda , Shintaro Nakano , Nobuyoshi Saito , Yujiro Hara , Shuichi Uchikoga
IPC分类号： H01L29/786 , B82Y10/00 , H01L29/66
CPC分类号： H01L29/7869 , B82Y10/00 , H01L29/66969
摘要： According to one embodiment, a thin film transistor includes a gate electrode, a semiconductor layer, a gate insulating film, and a source electrode and a drain electrode. The semiconductor layer includes an oxide including at least one of gallium and zinc, and indium. The gate insulating film is provided between the gate electrode and the semiconductor layer. The source electrode and a drain electrode are electrically connected to the semiconductor layer and spaced from each other. The semiconductor layer includes a plurality of fine crystallites dispersed three-dimensionally in the semiconductor layer and has periodicity in arrangement of atoms.
摘要翻译：根据一个实施例，薄膜晶体管包括栅电极，半导体层，栅极绝缘膜，以及源电极和漏电极。半导体层包括包含镓和锌中的至少一种的氧化物和铟。栅极绝缘膜设置在栅电极和半导体层之间。源电极和漏极电连接到半导体层并彼此间隔开。半导体层包括在半导体层中三维分散的多个细微晶体，并且具有原子排列的周期性。

2. 发明申请

US20100123389A1 LIGHT-EMITTING COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE 有权
标题翻译：发光化合物和有机电致发光器件
公开(公告)号：US20100123389A1
公开(公告)日：2010-05-20
申请号：US12616223
申请日：2009-11-11
申请人： Isao Takasu , Ryoko Iida , Yukitami Mizuno , Shintaro Enomoto , Shuichi Uchikoga
发明人： Isao Takasu , Ryoko Iida , Yukitami Mizuno , Shintaro Enomoto , Shuichi Uchikoga
IPC分类号： H01J1/63 , C07D209/82 , C08F26/06
CPC分类号： C09K11/06 , C07D209/82 , C08F26/06 , C08F126/12 , C09K2211/1029 , C09K2211/1466 , H01L51/0042 , H01L51/0085 , H01L51/0087 , H05B33/14 , H05B33/20
摘要： A light-emitting compound includes two or more carbazole skeletons each having two or more fluorine atoms at 2-, 4-, 5- and 7-positions, the carbazole skeleton represented by the formula (1): where two or more of R2, R4, R5 and R7 are F and a remainder is H.
摘要翻译：发光化合物包括在2-，4-，5-和7-位具有两个或更多个氟原子的两个或更多个咔唑骨架，由式（1）表示的咔唑骨架：其中R2， R4，R5和R7是F，余数是H.

3. 发明申请

US20080018631A1 DISPLAY DEVICE 有权
标题翻译：显示设备
公开(公告)号：US20080018631A1
公开(公告)日：2008-01-24
申请号：US11776018
申请日：2007-07-11
申请人： Tsuyoshi HIOKI , Shuichi Uchikoga
发明人： Tsuyoshi HIOKI , Shuichi Uchikoga
IPC分类号： G06F3/038
CPC分类号： G02F1/133305 , G02F1/133526
摘要： It is made possible to provide a low-cost highly reliable display device which does not lose the flexibility of itself and which can transmit the allowable range of the flexibility to the user. A display device includes: a display part having a display face and being flexible; and a restriction part having a plurality of first convex parts to restrict a bending quantity of the display part.
摘要翻译：可以提供一种低成本，高可靠性的显示装置，其不会失去其自身的灵活性，并且可以向用户传输允许的灵活性范围。一种显示装置，包括：具有显示面并具有柔性的显示部; 以及具有多个第一凸部以限制显示部的弯曲量的限制部。

4. 发明申请

US20070196920A1 Method and device of metamorphosing cells, and treatment apparatus using the same 审中-公开
标题翻译：变形细胞的方法和装置，以及使用其的处理装置
公开(公告)号：US20070196920A1
公开(公告)日：2007-08-23
申请号：US11507674
申请日：2006-08-22
申请人： Kazuhiro Suzuki , Yujiro Naruse , Hideyuki Funaki , Kazuhiko Itaya , Shuichi Uchikoga
发明人： Kazuhiro Suzuki , Yujiro Naruse , Hideyuki Funaki , Kazuhiko Itaya , Shuichi Uchikoga
IPC分类号： C12N15/09 , C12N15/00 , C12M3/00
CPC分类号： A61N5/00 , A61N1/406 , A61N5/0601
摘要： A cell metamorphosing device includes micro dishes which serves as diaphragms and hold a mixed medium containing harmful cells and nano-scale particles, an AC voltage supply, a heater and an inductor. The AC voltage supply faces with the micro dishes 2 with a space, and applies a bias to the micro dishes 2, so that the nano-scale particles are bombarded onto the harmful cells and destroy them.
摘要翻译：细胞变形装置包括用作隔膜并保持含有有害细胞和纳米级粒子的混合介质，AC电压源，加热器和电感器的微型盘。交流电压供给面与微型菜肴2具有空间，并向微型菜肴2施加偏压，使得纳米级颗粒被轰击到有害细胞上并将其破坏。

5. 发明申请

US20100127266A1 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：薄膜晶体管，其制造方法，显示装置及其制造方法
公开(公告)号：US20100127266A1
公开(公告)日：2010-05-27
申请号：US12620112
申请日：2009-11-17
申请人： Nobuyoshi SAITO , Tomomasa Ueda , Shintaro Nakano , Shuichi Uchikoga
发明人： Nobuyoshi SAITO , Tomomasa Ueda , Shintaro Nakano , Shuichi Uchikoga
IPC分类号： H01L33/00 , H01L29/786 , H01L21/336
CPC分类号： H01L27/1225 , H01L27/127 , H01L27/3244 , H01L27/3248 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L2227/323
摘要： A thin film transistor includes: an insulating layer; a gate electrode provided on the insulating layer; a gate insulating film provided on the gate electrode; a semiconductor layer provided on the gate insulating film, the semiconductor layer being formed of oxide; a source electrode and a drain electrode provided on the semiconductor layer; and a channel protecting layer provided between the source and drain electrodes and the semiconductor layer. The source electrode is opposed to one end of the gate electrode. The drain electrode is opposed to another end of the gate electrode. The another end is opposite to the one end. The drain electrode is apart from the source electrode. The channel protecting layer covers at least a part of a side face of a part of the semiconductor layer. The part of the semiconductor layer is not covered with the source electrode and the drain electrode above the gate electrode.
摘要翻译：薄膜晶体管包括：绝缘层; 设置在所述绝缘层上的栅电极; 设置在栅电极上的栅极绝缘膜; 设置在所述栅极绝缘膜上的半导体层，所述半导体层由氧化物形成; 设置在半导体层上的源电极和漏电极; 以及设置在源电极和漏电极与半导体层之间的沟道保护层。源电极与栅电极的一端相对。漏电极与栅电极的另一端相对。另一端与一端相反。漏极与源电极分开。沟道保护层覆盖半导体层的一部分的侧面的至少一部分。半导体层的一部分没有被栅电极上方的源电极和漏电极覆盖。

6. 发明申请

US20080230771A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20080230771A1
公开(公告)日：2008-09-25
申请号：US12045755
申请日：2008-03-11
申请人： Isao TAKASU , Tsuyoshi HIOKI , Isao AMEMIYA , Shuichi UCHIKOGA
发明人： Isao TAKASU , Tsuyoshi HIOKI , Isao AMEMIYA , Shuichi UCHIKOGA
IPC分类号： H01L51/05 , H01L51/40
CPC分类号： H01L51/0541 , H01L51/0023 , H01L51/102
摘要： It is made possible to provide a thin film transistor having transistor characteristics that do not widely vary. A thin film transistor includes: a substrate; a pair of insulating layers formed at a distance from each other on the substrate; a source electrode formed on one of the insulating layers, and a drain electrode formed on the other one of the insulating layers; a semiconductor layer formed to cover the source electrode, the drain electrode, and the substrate; a gate insulating film formed on the semiconductor layer; and a gate electrode formed on the gate insulating film.
摘要翻译：可以提供一种薄膜晶体管，其晶体管特性不会很大变化。薄膜晶体管包括：基板; 在基板上彼此间隔一定距离地形成的一对绝缘层; 形成在所述绝缘层之一上的源电极和形成在所述绝缘层中的另一个上的漏电极; 形成为覆盖源电极，漏电极和基板的半导体层; 形成在所述半导体层上的栅极绝缘膜; 以及形成在栅极绝缘膜上的栅电极。

7. 发明申请

US20080217623A1 OPTICAL SENSOR ELEMENT AND METHOD FOR DRIVING THE SAME 失效
标题翻译：光传感器元件及其驱动方法
公开(公告)号：US20080217623A1
公开(公告)日：2008-09-11
申请号：US11850307
申请日：2007-09-05
申请人： Yujiro Hara , Akira Kinno , Tsuyoshi Hioki , Isao Amemiya , Shuichi Uchikoga
发明人： Yujiro Hara , Akira Kinno , Tsuyoshi Hioki , Isao Amemiya , Shuichi Uchikoga
IPC分类号： H01L31/0368
CPC分类号： H01L31/1055 , H01L31/035272
摘要： An optical sensor element includes: an n-type semiconductor region formed on a substrate; an i-type semiconductor region which is formed on the substrate between the p-type semiconductor region and the n-type semiconductor region and which is lower in impurity concentration than the p-type semiconductor region and the n-type semiconductor region; an anode electrode formed on the insulation film and connected to the p-type semiconductor region; and a cathode electrode formed on the insulation film and connected to the n-type semiconductor region. A reverse bias voltage Vb is applied when detecting the photocurrent, the reverse bias voltage Vb satisfying a following relation. V1
摘要翻译：光学传感器元件包括：形成在基板上的n型半导体区域; 形成在p型半导体区域和n型半导体区域之间的衬底上并且杂质浓度低于p型半导体区域和n型半导体区域的i型半导体区域; 形成在绝缘膜上并与p型半导体区连接的阳极电极; 以及形成在绝缘膜上并连接到n型半导体区域的阴极电极。当检测到光电流时，施加反向偏置电压V BAT，反向偏置电压V BAT满足以下关系。 <？in-line-formula description =“In-line Formulas”end =“lead”？> V <1> > <？in-line-formula description =“In-line Formulas”end =“tail”？>

8. 发明授权

US06667198B2 Method and photo mask for manufacturing an array substrate 有权
标题翻译：用于制造阵列基板的方法和光罩
公开(公告)号：US06667198B2
公开(公告)日：2003-12-23
申请号：US10205317
申请日：2002-07-26
申请人： Shigeyuki Shimoto , Shuichi Uchikoga
发明人： Shigeyuki Shimoto , Shuichi Uchikoga
IPC分类号： H01L2100
CPC分类号： H01L29/66757 , H01L27/12 , H01L29/78675
摘要： A method of manufacturing an array substrate comprising; depositing an amorphous material on a transparent substrate; and changing the amorphous material to a polycrystalline material by irradiation of energy beams through a photo mask, the mask including a transparent region permitting the energy beams to pass through and a shutoff region surrounding the transparent region and interrupting the energy beams, wherein changing the amorphous material to the polycrystalline material includes: moving the transparent substrate by a constant distance perpendicularly to the lengthwise direction of a flat pattern projected onto the surface of the amorphous material when energy beams passing through the transparent region are irradiated onto the amorphous material; and irradiating the energy beams onto the amorphous material every time when the transparent substrate is moved.
摘要翻译：一种阵列基板的制造方法，在透明基板上沉积无定形材料; 以及通过照射能量束通过光掩模将所述无定形材料改变为多晶材料，所述掩模包括允许所述能量束通过的透明区域和围绕所述透明区域的截止区域并中断所述能量束，其中，多晶材料的材料包括：当通过透明区域的能量束照射到非晶材料上时，使透明基板移动垂直于投射到非晶材料表面上的平坦图案的长度方向上恒定的距离; 并且每当透明基板移动时，将能量束照射到非晶材料上。

9. 发明授权

US09153792B2 Organic electroluminescence device including auxiliary electrodes 有权
标题翻译：包括辅助电极的有机电致发光器件
公开(公告)号：US09153792B2
公开(公告)日：2015-10-06
申请号：US13081945
申请日：2011-04-07
申请人： Tomio Ono , Shintaro Enomoto , Yukitami Mizuno , Isao Takasu , Yasushi Shinjiyo , Shuichi Uchikoga
发明人： Tomio Ono , Shintaro Enomoto , Yukitami Mizuno , Isao Takasu , Yasushi Shinjiyo , Shuichi Uchikoga
IPC分类号： H01L51/52 , H01L27/15
CPC分类号： H01L51/5271 , H01L51/5212 , H01L51/5275 , H01L2251/5361 , H01L2251/558
摘要： According to one embodiment, in an organic electroluminescence device, a first substrate has a first refractive index n1. A second substrate is joined to an upper surface of the first substrate and has a second refractive index n2 higher than the first refractive index n1. Multiple wedge-shaped metal lines are buried in the second substrate in such a manner that one side of the wedge-shaped metal line is flush with an upper surface of the second substrate. A transparent electrode is formed on the upper surface of the second substrate and the multiple metal lines. An insulating layer is formed on a portion of the transparent electrode opposed to the multiple metal lines. An organic light emitting layer is formed on the transparent electrode on which the insulating layer is formed. A metal electrode is formed on the organic light emitting layer.
摘要翻译：根据一个实施例，在有机电致发光器件中，第一衬底具有第一折射率n1。第二基板连接到第一基板的上表面，并且具有比第一折射率n1高的第二折射率n2。多个楔形金属线以这样的方式被掩埋在第二基板中，使得楔形金属线的一侧与第二基板的上表面齐平。在第二基板的上表面和多条金属线上形成透明电极。在与多个金属线相对的透明电极的一部分上形成绝缘层。在形成有绝缘层的透明电极上形成有机发光层。在有机发光层上形成金属电极。

10. 发明授权

US08722206B2 Organic light-emitting diode 失效
标题翻译：有机发光二极管
公开(公告)号：US08722206B2
公开(公告)日：2014-05-13
申请号：US12876632
申请日：2010-09-07
申请人： Tomio Ono , Shintaro Enomoto , Isao Takasu , Yukitami Mizuno , Shuichi Uchikoga
发明人： Tomio Ono , Shintaro Enomoto , Isao Takasu , Yukitami Mizuno , Shuichi Uchikoga
IPC分类号： H01L51/52
CPC分类号： H01L51/0042 , H01L51/5016
摘要： According to one embodiment, an organic light-emitting diode includes an anode and a cathode arranged apart from each other, an emission layer, arranged between the anode and cathode, containing a host material of polyvinyl(2,7-difluorocarbazole), a blue-emitting phosphorescent material, and an electron transport material, and a hole transport layer of polyvinylcarbazole arranged adjacent to the emission layer on an anode side.
摘要翻译：根据一个实施例，有机发光二极管包括彼此分开布置的阳极和阴极，布置在阳极和阴极之间的发射层，其包含聚乙烯基（2,7-二氟咔唑），蓝色发射磷光材料和电子传输材料，以及在阳极侧与发光层相邻布置的聚乙烯基咔唑的空穴传输层。

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