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1. 发明授权

US08927991B2 Organic light emitting diode display device and manufacturing method thereof 有权
标题翻译：有机发光二极管显示装置及其制造方法
公开(公告)号：US08927991B2
公开(公告)日：2015-01-06
申请号：US13137791
申请日：2011-09-13
申请人： Kyu-Sik Cho , Joon-Hoo Choi , Byoung-Kwon Choo , Min-Chul Shin , Tae-Hoon Yang , Won-Kyu Lee , Yun-Gyu Lee , Bo-Kyung Choi , Yong-Hwan Park , Sang-Ho Moon
发明人： Kyu-Sik Cho , Joon-Hoo Choi , Byoung-Kwon Choo , Min-Chul Shin , Tae-Hoon Yang , Won-Kyu Lee , Yun-Gyu Lee , Bo-Kyung Choi , Yong-Hwan Park , Sang-Ho Moon
IPC分类号： H01L27/32 , H01L27/12 , H01L51/56
CPC分类号： H01L51/56 , H01L27/1255 , H01L27/1288 , H01L27/3262 , H01L27/3265
摘要： An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode.
摘要翻译： OLED显示器包括在具有第一栅电极，第二栅极和第一电容器电极的基板上的第一多晶硅层图案，栅极绝缘层图案，包括第一有源层的第二多晶硅层图案，第二有源层以及电容器多晶虚拟层，在第一有源层的预定区域上包括第一源极和漏极接触层的第三非晶硅层图案，在第二有源层的预定区域上的第二源极和漏极接触层，以及电容器多晶虚拟层上的电容器非晶虚拟层，以及包括第一源极/漏极，第二源极/漏极和第二电容器电极的数据金属层图案。

2. 发明授权

US08836604B2 Unified antenna of shark fin type 有权
标题翻译：鲨鱼翅统一天线
公开(公告)号：US08836604B2
公开(公告)日：2014-09-16
申请号：US13351024
申请日：2012-01-16
申请人： Tae Hoon Yang , Woo Jin Kim
发明人： Tae Hoon Yang , Woo Jin Kim
IPC分类号： H01Q1/42
CPC分类号： H01Q1/3275 , H01Q1/42 , H01Q9/36 , H01Q21/28
摘要： A unified antenna of shark fin type comprises a pad, a base disposed on upper surface of the pad and providing a space for arranging a printed circuit board and a plurality of antenna units, and a case for covering the pad and the base, wherein the antenna further comprises: a first antenna unit disposed in the middle of the printed circuit board and provided for receiving signal of AM/FM band; a second antenna unit disposed near the first antenna unit and provided for receiving signal of DMB (Digital Multimedia Broadcasting) band; and a third antenna unit disposed in front of the first antenna unit and provided for receiving signal of GPS (Global Positioning System) band, and a first auxiliary unit is disposed over the first antenna unit for enhancing electrical properties of the first antenna unit.
摘要翻译：鲨鱼鳍式统一天线包括垫，设置在垫的上表面上的基座，并提供布置印刷电路板和多个天线单元的空间，以及用于覆盖该垫和底座的壳体，其中，天线还包括：第一天线单元，设置在印刷电路板的中间并被提供用于接收AM / FM频带的信号; 设置在第一天线单元附近并被提供用于接收DMB（数字多媒体广播）频带的信号的第二天线单元; 以及第三天线单元，设置在第一天线单元的前面，用于接收GPS（全球定位系统）频带的信号，第一辅助单元设置在第一天线单元上，用于增强第一天线单元的电气特性。

3. 发明授权

US08623720B2 Method of fabricating a thin film transistor from amorphous silicon and organic light emitting diode display device having the thin film transistor 有权
标题翻译：从非晶硅制造薄膜晶体管的方法和具有薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08623720B2
公开(公告)日：2014-01-07
申请号：US13464697
申请日：2012-05-04
申请人： Joo-Chul Yoon , Oh-Seob Kwon , Yong-Soo Lee , Su-Bin Song , Joo-Hwa Lee , Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee
发明人： Joo-Chul Yoon , Oh-Seob Kwon , Yong-Soo Lee , Su-Bin Song , Joo-Hwa Lee , Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee
IPC分类号： H01L21/84
CPC分类号： H01L29/66757 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1281 , H01L27/3262
摘要： A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device including the TFT. The TFT includes a substrate having a pixel region and a non-pixel region, a semiconductor layer, a gate insulating layer, a gate electrode, and source and drain electrodes disposed on the pixel region, at least one gettering site disposed on the non-pixel region, and at least one connection portion to connect the at least one gettering site and the semiconductor layer. The method of fabricating the TFT includes patterning a polycrystalline silicon (poly-Si) layer to form a plurality of semiconductor layers, connection portions, and at least one gettering site, the semiconductor layers being connected to the at least one gettering site via the connection portions, and annealing the substrate to getter the plurality of semiconductor layers.
摘要翻译：薄膜晶体管（TFT）及其制造方法以及包括TFT的有机发光二极管（OLED）显示装置。 TFT包括具有像素区域和非像素区域的衬底，半导体层，栅极绝缘层，栅极电极和设置在像素区域上的源极和漏极，设置在非像素区域上的至少一个吸杂位置，像素区域和至少一个连接部分，以连接至少一个吸气部位和半导体层。制造TFT的方法包括图案化多晶硅（poly-Si）层以形成多个半导体层，连接部分和至少一个吸杂位点，半导体层经由连接连接到至少一个吸气部位部分，并且对衬底退火以吸收多个半导体层。

4. 发明授权

US08513669B2 Thin film transistor including metal or metal silicide structure in contact with semiconductor layer and organic light emitting diode display device having the thin film transistor 有权
标题翻译：包括与半导体层接触的金属或金属硅化物结构的薄膜晶体管和具有薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08513669B2
公开(公告)日：2013-08-20
申请号：US12194739
申请日：2008-08-20
申请人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee
发明人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee
IPC分类号： H01L27/15
CPC分类号： H01L29/66765 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L29/458 , H01L29/4908 , H01L29/66757
摘要： A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and including a channel region and source and drain regions, a gate electrode disposed in a position corresponding to the channel region of the semiconductor layer, a gate insulating layer interposed between the gate electrode and the semiconductor layer to electrically insulate the semiconductor layer from the gate electrode, a metal structure made up of metal layer, a metal silicide layer, or a double layer thereof disposed apart from the gate electrode over or under the semiconductor layer in a position corresponding to a region of the semiconductor layer other than a channel region, the structure being formed of the same material as the gate electrode, and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer.
摘要翻译：薄膜晶体管（TFT）包括衬底，设置在衬底上的半导体层，其包括沟道区和源极和漏极区，设置在与半导体层的沟道区对应的位置的栅电极，栅极绝缘层插入在栅极电极和半导体层之间以使半导体层与栅电极电绝缘，由金属层，金属硅化物层或双层构成的金属结构，其在半导体上或下方与栅电极隔开层，其位于与沟道区以外的半导体层的区域相对应的位置，该结构由与栅电极相同的材料形成，以及电连接到半导体层的源极和漏极区的源极和漏极。

5. 发明授权

US08373097B2 Apparatus for thermally processing substrate 有权
标题翻译：用于热处理衬底的装置
公开(公告)号：US08373097B2
公开(公告)日：2013-02-12
申请号：US12713982
申请日：2010-02-26
申请人： Heung-Yeol Na , Min-Jae Jeong , Jong-Won Hong , Eu-Gene Kang , Seok-Rak Chang , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Yun-Mo Chung , Byung-Soo So , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Won-Bong Baek , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Jae-Wan Jung
发明人： Heung-Yeol Na , Min-Jae Jeong , Jong-Won Hong , Eu-Gene Kang , Seok-Rak Chang , Ki-Yong Lee , Jin-Wook Seo , Tae-Hoon Yang , Yun-Mo Chung , Byung-Soo So , Byoung-Keon Park , Dong-Hyun Lee , Kil-Won Lee , Won-Bong Baek , Jong-Ryuk Park , Bo-Kyung Choi , Ivan Maidanchuk , Jae-Wan Jung
IPC分类号： F27D11/00 , A21B1/00 , A21B1/22
CPC分类号： F27B17/0025 , H01L21/67109
摘要： An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates.
摘要翻译：一种用于热加工多个基板的装置，包括处理室，其中堆叠有多个基板的船只装载在该处理室中;以及加热器室，与处理室分离并具有多个加热器以向处理室施加热量。这里，加热器安装成对应于多个基板的所有侧面。因此，可以使处理室中的温度分布最小化并且均匀地向多个基板的整个区域供给热量。

6. 发明申请

US20120268331A1 SMALL ANTENNA FOR VEHICLE 审中-公开
标题翻译：小型天线
公开(公告)号：US20120268331A1
公开(公告)日：2012-10-25
申请号：US13365797
申请日：2012-02-03
申请人： Tae Hoon YANG , Woo Jin KIM
发明人： Tae Hoon YANG , Woo Jin KIM
IPC分类号： H01Q1/27
CPC分类号： H01Q1/362 , H01Q1/32 , H01Q9/36
摘要： A small antenna for vehicle comprises a coil member of helical antenna structure with a plurality of coils formed; a connector disposed at one end of the coil member; a signal pin contacting with the connector; a cylindrical member coupled to the other end of the coil member and made of metal material; a dielectric body inserted inside the coil member and cylindrical member and disposed adjacent to the connector and signal pin; a conductor inserted inside the coil member and cylindrical member and disposed at one end of the dielectric body; and a cover member enclosing the coil member and cylindrical member inside which the dielectric body and conductor are inserted.
摘要翻译：用于车辆的小型天线包括螺旋天线结构的线圈构件，其形成有多个线圈; 连接器，设置在线圈构件的一端; 信号引脚与连接器接触; 耦合到线圈构件的另一端并由金属材料制成的圆柱形构件; 绝缘体，插入在线圈构件和圆柱形构件内部，并且邻近连接器和信号引脚设置; 插入在线圈构件和圆柱形构件内的导体，并布置在介电体的一端; 以及封闭所述线圈构件和圆筒构件的盖构件，所述绝缘体和导体插入所述线圈构件和圆筒构件内。

7. 发明授权

US08294158B2 Thin film transistor, method of fabricating the same, and organic light emitting diode display device including the thin film transistor 有权
标题翻译：薄膜晶体管，其制造方法以及包括该薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08294158B2
公开(公告)日：2012-10-23
申请号：US12649718
申请日：2009-12-30
申请人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee , Dong-Hyun Lee , Maxim Lisachenko , Ki-Yong Lee
发明人： Byoung-Keon Park , Jin-Wook Seo , Tae-Hoon Yang , Kil-Won Lee , Dong-Hyun Lee , Maxim Lisachenko , Ki-Yong Lee
IPC分类号： H01L27/14 , H01L27/12 , H01L27/20 , H01L27/36
CPC分类号： H01L29/66757 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1281 , H01L29/04 , H01L29/78606
摘要： A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and including source and drain regions, each having a first metal catalyst crystallization region and a second metal catalyst crystallization region, and a channel region having the second metal catalyst crystallization region, a gate electrode disposed in a position corresponding to the channel region of the semiconductor layer, a gate insulating layer interposed between the semiconductor layer and the gate electrode to electrically insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically insulated from the gate electrode and electrically connected to the source and drain regions, respectively. An OLED display device includes the thin film transistor and a first electrode, an organic layer, and a second electrode electrically connected to the source and drain electrodes.
摘要翻译：薄膜晶体管（TFT）包括衬底，设置在衬底上并包括源区和漏区的半导体层，每个具有第一金属催化剂结晶区和第二金属催化剂结晶区，以及具有第二金属催化剂的沟道区结晶区域，设置在与半导体层的沟道区域对应的位置的栅极电极，插入在半导体层和栅电极之间以将半导体层与栅电极电绝缘的栅极绝缘层，以及电极和漏极电极与栅电极绝缘并分别电连接到源极和漏极区。 OLED显示装置包括薄膜晶体管和电连接到源极和漏极的第一电极，有机层和第二电极。

8. 发明申请

US20120220085A1 THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE THIN FILM TRANSISTOR 有权
标题翻译：薄膜晶体管，其制造方法以及具有薄膜晶体管的有机发光二极管显示器件
公开(公告)号：US20120220085A1
公开(公告)日：2012-08-30
申请号：US13464697
申请日：2012-05-04
申请人： Joo-Chul YOON , Oh-Seob KWON , Yong-Soo LEE , Su-Bin SONG , Joo-Hwa LEE , Byoung-Keon PARK , Tae-Hoon YANG , Jin-Wook SEO , Ki-Yong LEE
发明人： Joo-Chul YOON , Oh-Seob KWON , Yong-Soo LEE , Su-Bin SONG , Joo-Hwa LEE , Byoung-Keon PARK , Tae-Hoon YANG , Jin-Wook SEO , Ki-Yong LEE
IPC分类号： H01L21/336
CPC分类号： H01L29/66757 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1281 , H01L27/3262
摘要： A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device including the TFT. The TFT includes a substrate having a pixel region and a non-pixel region, a semiconductor layer, a gate insulating layer, a gate electrode, and source and drain electrodes disposed on the pixel region, at least one gettering site disposed on the non-pixel region, and at least one connection portion to connect the at least one gettering site and the semiconductor layer. The method of fabricating the TFT includes patterning a polycrystalline silicon (poly-Si) layer to form a plurality of semiconductor layers, connection portions, and at least one gettering site, the semiconductor layers being connected to the at least one gettering site via the connection portions, and annealing the substrate to getter the plurality of semiconductor layers.
摘要翻译：薄膜晶体管（TFT）及其制造方法以及包括TFT的有机发光二极管（OLED）显示装置。 TFT包括具有像素区域和非像素区域的衬底，半导体层，栅极绝缘层，栅极电极和设置在像素区域上的源极和漏极，设置在非像素区域上的至少一个吸杂位置，像素区域和至少一个连接部分，以连接至少一个吸气部位和半导体层。制造TFT的方法包括图案化多晶硅（poly-Si）层以形成多个半导体层，连接部分和至少一个吸杂位点，半导体层通过连接连接到至少一个吸气部位部分，并且对衬底退火以吸收多个半导体层。

9. 发明授权

US08198634B2 Thin film transistor, method of fabricating the same, and organic light emitting diode display device having the thin film transistor 有权
标题翻译：薄膜晶体管，其制造方法以及具有薄膜晶体管的有机发光二极管显示装置
公开(公告)号：US08198634B2
公开(公告)日：2012-06-12
申请号：US12641948
申请日：2009-12-18
申请人： Joo-Chul Yoon , Oh-Seob Kwon , Yong-Soo Lee , Su-Bin Song , Joo-Hwa Lee , Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee
发明人： Joo-Chul Yoon , Oh-Seob Kwon , Yong-Soo Lee , Su-Bin Song , Joo-Hwa Lee , Byoung-Keon Park , Tae-Hoon Yang , Jin-Wook Seo , Ki-Yong Lee
IPC分类号： H01L33/00
CPC分类号： H01L29/66757 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1281 , H01L27/3262
摘要： A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device including the TFT. The TFT includes a substrate having a pixel region and a non-pixel region, a semiconductor layer, a gate insulating layer, a gate electrode, and source and drain electrodes disposed on the pixel region, at least one gettering site disposed on the non-pixel region, and at least one connection portion to connect the at least one gettering site and the semiconductor layer The method of fabricating the TFT includes patterning a polycrystalline silicon (poly-Si) layer to form a plurality of semiconductor layers, connection portions, and at least one gettering site, the semiconductor layers being connected to the at least one gettering site via the connection portions, and annealing the substrate to getter the plurality of semiconductor layers.
摘要翻译：薄膜晶体管（TFT）及其制造方法以及包括TFT的有机发光二极管（OLED）显示装置。 TFT包括具有像素区域和非像素区域的衬底，半导体层，栅极绝缘层，栅极电极和设置在像素区域上的源极和漏极，设置在非像素区域上的至少一个吸杂位置，像素区域和至少一个连接部分，以连接至少一个吸杂位点和半导体层。制造TFT的方法包括图案化多晶硅（poly-Si）层以形成多个半导体层，连接部分和至少一个吸气部位，所述半导体层经由所述连接部与所述至少一个吸杂部位连接，并使所述基板退火以吸收所述多个半导体层。

10. 发明申请

US20120104393A1 Organic light emitting diode display device and manufacturing method thereof 有权
标题翻译：有机发光二极管显示装置及其制造方法
公开(公告)号：US20120104393A1
公开(公告)日：2012-05-03
申请号：US13137791
申请日：2011-09-13
申请人： Kyu-Sik Cho , Joon-Hoo Choi , Byoung-Kwon Choo , Min-Chul Shin , Tae-Hoon Yang , Won-Kyu Lee , Yun-Gyu Lee , Bo-Kyung Choi , Yong-Hwan Park , Sang-Ho Moon
发明人： Kyu-Sik Cho , Joon-Hoo Choi , Byoung-Kwon Choo , Min-Chul Shin , Tae-Hoon Yang , Won-Kyu Lee , Yun-Gyu Lee , Bo-Kyung Choi , Yong-Hwan Park , Sang-Ho Moon
IPC分类号： H01L33/08 , H01L33/16
CPC分类号： H01L51/56 , H01L27/1255 , H01L27/1288 , H01L27/3262 , H01L27/3265
摘要： An OLED display includes a first polysilicon layer pattern on a substrate having a first gate electrode, a second gate electrode, and a first capacitor electrode, a gate insulating layer pattern, a second polysilicon layer pattern including a first active layer, a second active layer, and a capacitor polycrystalline dummy layer, a third amorphous silicon layer pattern including first source and drain resistant contact layers on a predetermined region of the first active layer, second source and drain resistant contact layers on a predetermined region of the second active layer, and a capacitor amorphous dummy layer on the capacitor polycrystalline dummy layer, and a data metal layer pattern including first source/drain electrodes, second source/drain electrodes, and a second capacitor electrode.
摘要翻译： OLED显示器包括在具有第一栅电极，第二栅极和第一电容器电极的基板上的第一多晶硅层图案，栅极绝缘层图案，包括第一有源层的第二多晶硅层图案，第二有源层以及电容器多晶虚拟层，在第一有源层的预定区域上包括第一源极和漏极接触层的第三非晶硅层图案，在第二有源层的预定区域上的第二源极和漏极接触层，以及电容器多晶虚拟层上的电容器非晶虚拟层，以及包括第一源极/漏极，第二源极/漏极和第二电容器电极的数据金属层图案。

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