专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06673996B2 Thermoelectric unicouple used for power generation 失效
标题翻译：用于发电的热电单体
公开(公告)号：US06673996B2
公开(公告)日：2004-01-06
申请号：US10138040
申请日：2002-05-01
申请人： Thierry Caillat , Andrew Zoltan , Leslie Zoltan , Jeffrey Snyder
发明人： Thierry Caillat , Andrew Zoltan , Leslie Zoltan , Jeffrey Snyder
IPC分类号： H01L3534
CPC分类号： H01L35/08 , H01L35/04 , H01L35/18 , H01L35/20 , H01L35/32 , H01L35/34
摘要： A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalizes certain aspects of the different segments. Different materials are also described.
摘要翻译：一种高效率的热电单体用于发电。该单组件形成有多个腿，每个腿由多个段形成。腿以使得不同部分的某些方面相等的方式形成。还描述了不同的材料。

2. 发明申请

US20100243018A1 METALLIZATION FOR ZINTL-BASED THERMOELECTRIC DEVICES 审中-公开
标题翻译：基于ZINTL的热电设备的金属化
公开(公告)号：US20100243018A1
公开(公告)日：2010-09-30
申请号：US12749491
申请日：2010-03-29
申请人： Billy Chun-Yip Li , Erik J. Brandon , Vilupanur A. Ravi , Thierry Caillat , Richard C. Ewell , Samad A. Firdosy , Jeff S. Sakamoto
发明人： Billy Chun-Yip Li , Erik J. Brandon , Vilupanur A. Ravi , Thierry Caillat , Richard C. Ewell , Samad A. Firdosy , Jeff S. Sakamoto
IPC分类号： H01L35/30 , B32B37/02 , B32B38/00
CPC分类号： H01L35/08 , H01L35/18 , Y10T156/10
摘要： A thermoelectric power generation device using molybdenum metallization to a Zintl thermoelectric material in a thermoelectric power generation device operating at high temperature, e.g. at or above 1000° C., is disclosed. The Zintl thermoelectric material may comprise Yb14MnSb11. A thin molybdenum metallization layer of approximately 5 microns or less may be employed. The thin molybdenum layer may be applied in a foil under high pressure, e.g. 1800 psi, at high temperature, e.g. 1000° C. The metallization layer may then be bonded or brazed to other components, such as heat collectors or current carrying electrodes, of the thermoelectric power generation device.
摘要翻译：一种在高温下工作的热电发电装置中的Zintl热电材料使用钼金属化的热电发电装置。在1000℃或1000℃以上。 Zintl热电材料可以包括Yb14MnSb11。可以使用约5微米或更小的薄钼金属化层。薄钼层可以在高压下的箔中施加，例如， 1800psi，在高温下，例如然后将金属化层接合或钎焊到热电发电装置的其它部件，例如集热器或载流电极。

3. 发明授权

US06942728B2 High performance p-type thermoelectric materials and methods of preparation 有权
标题翻译：高性能p型热电材料及其制备方法
公开(公告)号：US06942728B2
公开(公告)日：2005-09-13
申请号：US10262807
申请日：2002-10-01
申请人： Thierry Caillat , Alexander Borshchevsky , Jean-Pierre Fleurial
发明人： Thierry Caillat , Alexander Borshchevsky , Jean-Pierre Fleurial
IPC分类号： C22C1/04 , C22C12/00 , G01K7/04 , H01L35/16 , H01L35/18 , H01L35/34 , C30B29/48
CPC分类号： H01L35/18 , B22F2998/10 , B22F2999/00 , C22C1/0491 , C22C12/00 , G01K7/04 , H01L35/16 , H01L35/34 , B22F1/0085 , B22F9/04 , B22F3/14
摘要： The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn4−xAxSb3−yBy wherein 0≦x≦4, A is a transition metal, B is a pnicogen, and 0≦y≦3 are formed for use in manufacturing thermoelectric devices with substantially enhanced operating characteristics and improved efficiency. Two methods of preparing p-type Zn4Sb3 and related alloys of the present invention include a crystal growth method and a powder metallurgy method.
摘要翻译：本发明体现在具有增强的热电性能的高性能p型热电材料和制备这种材料的方法中。在本发明的一个方面，式Zn 4-x A x Sb 3-y B y y的p型半导体，其中0 <= x <= 4，A是过渡金属，B是pnicogen，并且形成0 <= y <= 3，用于制造具有显着增强的操作特性和提高效率的热电器件。制备本发明的p型Zn 4 Sb 3 O 3和相关合金的两种方法包括晶体生长法和粉末冶金法。

4. 发明授权

US06563039B2 Thermoelectric unicouple used for power generation 有权
公开(公告)号：US06563039B2
公开(公告)日：2003-05-13
申请号：US09765062
申请日：2001-01-17
申请人： Thierry Caillat , Jean-Pierre Fleurial , Alexander Borshchevsky , G. Jeffrey Snyder , Andrew Zoltan , Leslie Zoltan
发明人： Thierry Caillat , Jean-Pierre Fleurial , Alexander Borshchevsky , G. Jeffrey Snyder , Andrew Zoltan , Leslie Zoltan
IPC分类号： H01L3528
CPC分类号： H01L35/04 , H01L35/18 , H01L35/32
摘要： A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalized certain aspects of the different segments. Different materials are also described.

5. 发明申请

US20120006376A1 ELECTRICAL CONTACTS FOR SKUTTERUDITE THERMOELECTRIC MATERIALS 审中-公开
标题翻译： SKUTTERUDITE热电材料的电气接触
公开(公告)号：US20120006376A1
公开(公告)日：2012-01-12
申请号：US13161156
申请日：2011-06-15
申请人： JEAN-PIERRE FLEURIAL , Thierry Caillat , Su Chih Chi
发明人： JEAN-PIERRE FLEURIAL , Thierry Caillat , Su Chih Chi
IPC分类号： H01L35/32 , H01L35/34 , H01L35/18
CPC分类号： H01L35/08 , H01L35/18
摘要： A thermally stable diffusion barrier for bonding skutterudite-based materials with metal contacts is disclosed. The diffusion barrier may be employed to inhibit solid-state diffusion between the metal contacts, e.g. titanium (Ti), nickel (Ni), copper (Cu), palladium (Pd) or other suitable metal electrical contacts, and a skutterudite thermoelectric material including a diffusible element, such as antimony (Sb), phosphorous (P) or arsenic (As), e.g. n-type CoSb3 or p-type CeFe4−xCoxSb12 where the diffusible element is Sb, to slow degradation of the mechanical and electrical characteristics of the device. The diffusion barrier may be employed to bond metal contacts to thermoelectric materials for various power generation applications operating at high temperatures (e.g. 673 K or above). Some exemplary diffusion barrier materials have been identified such as zirconium (Zr), hafnium (Hf), and yttrium (Y).
摘要翻译：公开了一种热稳定的扩散阻挡层，用于粘接具有金属触点的方钴矿基材料。可以使用扩散阻挡层来抑制金属触点之间的固态扩散，例如，钛（Ti），镍（Ni），铜（Cu），钯（Pd）或其它合适的金属电触点，以及包括可扩散元素如锑（Sb），磷（P）或砷 As），例如 n型CoSb3或p型CeFe4-xCoxSb12，其中可扩散元素为Sb，从而缓慢降低器件的机械和电气特性。可以使用扩散阻挡层将金属触点接合到用于在高温（例如673K或更高）下操作的各种发电应用的热电材料。已经鉴定了一些示例性的扩散阻挡材料，例如锆（Zr），铪（Hf）和钇（Y）。

6. 发明授权

US6046398A Micromachined thermoelectric sensors and arrays and process for producing 失效
标题翻译：微加工热电传感器和阵列及其制造工艺
公开(公告)号：US6046398A
公开(公告)日：2000-04-04
申请号：US190416
申请日：1998-11-04
申请人： Marc C. Foote , Eric W. Jones , Thierry Caillat
发明人： Marc C. Foote , Eric W. Jones , Thierry Caillat
IPC分类号： G01J5/12 , H01L35/18 , H01L35/00
CPC分类号： H01L35/18 , G01J5/12
摘要： Linear arrays with up to 63 micromachined thermopile infrared detectors on silicon substrates have been constructed and tested. Each detector consists of a suspended silicon nitride membrane with 11 thermocouples of sputtered Bi--Te and Bi--Sb--Te thermoelectric elements films. At room temperature and under vacuum these detectors exhibit response times of 99 ms, zero frequency D* values of 1.4.times.10.sup.9 cmHz.sup.1/2 /W and responsivity values of 1100 V/W when viewing a 1000 K blackbody source. The only measured source of noise above 20 mHz is Johnson noise from the detector resistance. These results represent the best performance reported to date for an array of thermopile detectors. The arrays are well suited for uncooled dispersive point spectrometers. In another embodiment, also with Bi--Te and Bi--Sb--Te thermoelectric materials on micromachined silicon nitride membranes, detector arrays have been produced with D* values as high as 2.2.times.10.sup.9 cmHz.sup.1/2 /W for 83 ms response times.
摘要翻译：已经构建并测试了在硅衬底上具有多达63个微加工热电堆红外探测器的线性阵列。每个检测器由具有11个溅射Bi-Te和Bi-Sb-Te热电元件膜的11个热电偶的悬浮氮化硅膜组成。在室温和真空下，这些检测器的响应时间为99 ms，零频率D *值为1.4x109 cmHz + E，fra 1/2 + EE / W，当查看1000 K黑体源时，响应度值为1100 V / W 。 20 mHz以上唯一测得的噪声源是来自检测器电阻的约翰逊噪声。这些结果代表迄今为止报道的热电堆检测器阵列的最佳性能。阵列非常适合于非冷却色散点光谱仪。在另一个实施方案中，对于微加工氮化硅膜上的Bi-Te和Bi-Sb-Te热电材料，已经生产了具有高达2.2×10 9 cmHz + E的D *值的检测器阵列，为1/2 + EE / W 83 ms响应时间。

7. 发明授权

US5831286A High mobility p-type transition metal tri-antimonide and related skutterudite compounds and alloys for power semiconducting devices 失效
标题翻译：高迁移率p型过渡金属三锑化物和相关方钴矿化合物和用于功率半导体器件的合金
公开(公告)号：US5831286A
公开(公告)日：1998-11-03
申请号：US643914
申请日：1996-05-07
申请人： Jean-Pierre Fleurial , Thierry Caillat , Alexander Borshchevsky , Jan W. Vandersande
发明人： Jean-Pierre Fleurial , Thierry Caillat , Alexander Borshchevsky , Jan W. Vandersande
IPC分类号： H01L29/24 , H01L31/0256
CPC分类号： H01L29/24
摘要： Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb, P, and As, having the general formula TX, wherein X is Sb.sub.3, P.sub.3, or As.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced semiconductor properties results in semiconductor materials which may be used in the fabrication of power semiconductor devices to substantially improve the efficiency of the resulting semiconductor device. Semiconductor alloys having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using vertical gradient freeze techniques, liquid-solid phase sintering techniques, low temperature powder sintering and/or hot-pressing.
摘要翻译：已经制备了第Ⅷ族（Co，Rh和Ir）的金属过渡金属（Co，Rh和Ir），其具有通式为Sb TX with with with with with with with with with with with with with with with with with with with with or or or or or 这些半导体合金的方钴矿型晶格结构及其增强的半导体特性产生可用于制造功率半导体器件的半导体材料，以显着提高所得半导体器件的效率。具有期望的方钴矿型晶格结构的半导体合金可以通过使用垂直梯度冷冻技术，液相 - 固相烧结技术，低温粉末烧结和/或热压法，根据本发明制备。

8. 发明申请

US20150357541A1 COMPLIANT INTERFACIAL LAYERS IN THERMOELECTRIC DEVICES 有权
标题翻译：热电装置中合适的界面层
公开(公告)号：US20150357541A1
公开(公告)日：2015-12-10
申请号：US13913233
申请日：2013-06-07
申请人： Samad A. Firdosy , Billy Chun-Yip Li , Vilupanur A. Ravi , Jean-Pierre Fleurial , Thierry Caillat , Harut Anjunyan
发明人： Samad A. Firdosy , Billy Chun-Yip Li , Vilupanur A. Ravi , Jean-Pierre Fleurial , Thierry Caillat , Harut Anjunyan
IPC分类号： H01L35/08 , B23K1/19 , H01L35/34 , B23K1/00 , H01L35/32 , H01L35/20
CPC分类号： H01L35/08 , H01L35/20 , H01L35/32 , H01L35/34
摘要： A thermoelectric power generation device is disclosed using one or more mechanically compliant and thermally and electrically conductive layers at the thermoelectric material interfaces to accommodate high temperature differentials and stresses induced thereby. The compliant material may be metal foam or metal graphite composite (e.g. using nickel) and is particularly beneficial in high temperature thermoelectric generators employing Zintl thermoelectric materials. The compliant material may be disposed between the thermoelectric segments of the device or between a thermoelectric segment and the hot or cold side interconnect of the device.
摘要翻译：公开了一种在热电材料界面处使用一个或多个机械柔性和导热和导电层的热电发电装置，以适应由此引起的高温差和应力。顺应性材料可以是金属泡沫或金属石墨复合材料（例如使用镍），并且在采用Zintl热电材料的高温热电发电机中是特别有利的。柔性材料可以设置在装置的热电段之间或热电段与装置的热侧或冷侧互连之间。

9. 发明授权

US07480984B1 Method of suppressing sublimation in advanced thermoelectric devices 失效
标题翻译：抑制先进热电装置升华的方法
公开(公告)号：US07480984B1
公开(公告)日：2009-01-27
申请号：US10863835
申请日：2004-06-07
申请人： Jeffrey S. Sakamoto , Thierry Caillat , Jean-Pierre Fleurial , G. Jeffrey Snyder
发明人： Jeffrey S. Sakamoto , Thierry Caillat , Jean-Pierre Fleurial , G. Jeffrey Snyder
IPC分类号： H05B3/00
CPC分类号： H05B3/46 , H01L35/18 , H01L35/34 , Y10T29/49083 , Y10T29/49087 , Y10T29/49096 , Y10T29/49117
摘要： A method of applying a physical barrier to suppress thermal decomposition near a surface of a thermoelectric material including applying a continuous metal foil to a predetermined portion of the surface of the thermoelectric material, physically binding the continuous metal foil to the surface of the thermoelectric material using a binding member, and heating in a predetermined atmosphere the applied and physically bound continuous metal foil and the thermoelectric material to a sufficient temperature in order to promote bonding between the continuous metal foil and the surface of the thermoelectric material. The continuous metal foil forms a physical barrier to enclose a predetermined portion of the surface. Thermal decomposition is suppressed at the surface of the thermoelectric material enclosed by the physical barrier when the thermoelectric element is in operation.
摘要翻译：一种施加物理屏障来抑制热电材料表面附近的热分解的方法，包括在热电材料的表面的预定部分上施加连续的金属箔，将连续的金属箔与热电材料的表面物理地结合在一起，使用在预定的气氛中将所施加和物理结合的连续金属箔和热电材料加热到足够的温度，以促进连续金属箔与热电材料表面之间的结合。连续金属箔形成物理屏障以封闭表面的预定部分。当热电元件工作时，由物理屏障包围的热电材料的表面抑制热分解。

10. 发明授权

US06660926B2 Thermoelectric devices based on materials with filled skutterudite structures 有权
标题翻译：基于具有填充方钴矿结构的材料的热电装置
公开(公告)号：US06660926B2
公开(公告)日：2003-12-09
申请号：US10007549
申请日：2001-11-06
申请人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
发明人： Jean-Pierre Fleurial , Alex Borshchevsky , Thierry Caillat , Donald T. Morelli , Gregory P. Meisner
IPC分类号： H01L3528
CPC分类号： H01L35/32 , H01L35/18 , H01L35/22
摘要： A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical conductivities in these filled skutterudites for large ZT values. Substituting and filling methods are disclosed to synthesize skutterudite compositions with desired thermoelectric properties. A melting and/or sintering process in combination with powder metallurgy techniques is used to fabricate these new materials.
摘要翻译：一类基于方钴矿结构的热电化合物，在空的八分圆中具有重的填充原子，并且替代过渡金属和主族原子。高塞贝克系数和低热导率结合在这些填充的方程中用于大ZT值的大电导率。公开了替代和填充方法来合成具有所需热电性质的方钴矿组合物。使用与粉末冶金技术相结合的熔融和/或烧结方法来制造这些新材料。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式