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1. 发明申请

US20090014708A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20090014708A1
公开(公告)日：2009-01-15
申请号：US12169818
申请日：2008-07-09
申请人： Yoshitaka SASAGO , Motoyasu Terao , Norikatsu Takaura , Yoshihisa Fujisaki , Tomoyuki Kodama , Nobuyuki Arasawa
发明人： Yoshitaka SASAGO , Motoyasu Terao , Norikatsu Takaura , Yoshihisa Fujisaki , Tomoyuki Kodama , Nobuyuki Arasawa
IPC分类号： H01L45/00
CPC分类号： H01L45/1206 , G06N3/063 , G11C13/0011 , H01L45/085 , H01L45/142 , H01L45/146 , H01L45/1675
摘要： A nonvolatile, sophisticated semiconductor device with a small surface area and a simple structure capable of switching connections between three or more electrodes. In a semiconductor device at least one of the electrodes contains atoms such as copper or silver in the solid electrolyte capable of easily moving within the solid electrolyte, and those electrodes face each other and applying a voltage switches the voltage on and off by generating or annihilating the conductive path between the electrodes. Moreover applying a voltage to a separate third electrode can annihilate the conductive path formed between two electrodes without applying a voltage to the two electrode joined by the conductive path.
摘要翻译：具有小表面积的非易失性，复杂的半导体器件和能够切换三个或更多个电极之间的连接的简单结构。在半导体器件中，电极中的至少一个在固体电解质中含有诸如铜或银之类的原子，能够容易地在固体电解质内移动，并且这些电极彼此面对并且施加电压通过产生或消除电压来开启和关闭电压电极之间的导电路径。此外，向单独的第三电极施加电压可以消除在两个电极之间形成的导电路径，而不向由导电路径连接的两个电极施加电压。

2. 发明申请

US20080148010A1 SEMICONDUCTOR INTEGRATED CIRCUIT 审中-公开
标题翻译：半导体集成电路
公开(公告)号：US20080148010A1
公开(公告)日：2008-06-19
申请号：US11957005
申请日：2007-12-14
申请人： Tomoyuki KODAMA
发明人： Tomoyuki KODAMA
IPC分类号： G06F15/80 , G06F9/06
CPC分类号： G06F15/7867
摘要： The system design is facilitated by eliminating the increase in data transfer volume of the whole system. In order to facilitate the system design, there are provided an operation unit array, a memory array, a data transfer circuit, and a switch circuit. There are also provided a configuration data management unit for managing the configuration data defining the logical behaviors of the operation unit array, the memory array, the data transfer circuit, and the switch circuit, as well as a state transition management unit capable of controlling the switching of the configuration data. The data transfer circuit includes a control circuit capable of autonomously sorting the data by determining the timing of the data sorting according to the setting included in the configuration data.
摘要翻译：通过消除整个系统的数据传输量的增加，便于系统设计。为了便于系统设计，提供了操作单元阵列，存储器阵列，数据传输电路和开关电路。还提供了一种用于管理定义操作单元阵列，存储器阵列，数据传输电路和开关电路的逻辑行为的配置数据的配置数据管理单元，以及能够控制切换配置数据。数据传输电路包括控制电路，该控制电路能够通过根据包括在配置数据中的设置来确定数据排序的定时来自动排序数据。

3. 发明授权

US07767997B2 Semiconductor device with solid electrolyte switching 失效
标题翻译：具有固体电解质开关的半导体器件
公开(公告)号：US07767997B2
公开(公告)日：2010-08-03
申请号：US12169818
申请日：2008-07-09
申请人： Yoshitaka Sasago , Motoyasu Terao , Norikatsu Takaura , Yoshihisa Fujisaki , Tomoyuki Kodama , Nobuyuki Arasawa
发明人： Yoshitaka Sasago , Motoyasu Terao , Norikatsu Takaura , Yoshihisa Fujisaki , Tomoyuki Kodama , Nobuyuki Arasawa
IPC分类号： H01L29/06 , H01L29/08
CPC分类号： H01L45/1206 , G06N3/063 , G11C13/0011 , H01L45/085 , H01L45/142 , H01L45/146 , H01L45/1675
摘要： A nonvolatile, sophisticated semiconductor device with a small surface area and a simple structure capable of switching connections between three or more electrodes. In a semiconductor device at least one of the electrodes contains atoms such as copper or silver in the solid electrolyte capable of easily moving within the solid electrolyte, and those electrodes face each other and applying a voltage switches the voltage on and off by generating or annihilating the conductive path between the electrodes. Moreover applying a voltage to a separate third electrode can annihilate the conductive path formed between two electrodes without applying a voltage to the two electrode joined by the conductive path.
摘要翻译：具有小表面积的非易失性，复杂的半导体器件和能够切换三个或更多个电极之间的连接的简单结构。在半导体器件中，电极中的至少一个在固体电解质中含有诸如铜或银之类的原子，能够容易地在固体电解质内移动，并且这些电极彼此面对并且施加电压通过产生或消除电压来开启和关闭电压电极之间的导电路径。此外，向单独的第三电极施加电压可以消除在两个电极之间形成的导电路径，而不向由导电路径连接的两个电极施加电压。

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