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1. 发明授权

US08931514B2 Liquid flow rate control valve 有权
标题翻译：液体流量控制阀
公开(公告)号：US08931514B2
公开(公告)日：2015-01-13
申请号：US13497094
申请日：2010-09-30
申请人： Tsuneo Endo , Seiichiro Ishikawa , Hidemi Arai , Yuki Shibahata , Mitsuo Kadota , Hiroshi Hanabusa , Daiki Sato , Kensaku Yamamoto
发明人： Tsuneo Endo , Seiichiro Ishikawa , Hidemi Arai , Yuki Shibahata , Mitsuo Kadota , Hiroshi Hanabusa , Daiki Sato , Kensaku Yamamoto
IPC分类号： F16K3/26 , F16K3/34 , B60K6/12 , B60K6/40 , F02N7/08 , F15B13/04 , F15B13/044
CPC分类号： B60K6/12 , B60K6/40 , F02N7/08 , F15B13/0406 , F15B13/0444 , F16K3/262 , F16K3/34 , F16K5/0414 , Y02T10/6208 , Y02T10/6282 , Y10T137/3127 , Y10T137/86533 , Y10T137/86702 , Y10T137/8671 , Y10T137/86734 , Y10T137/86751 , Y10T137/88022
摘要： A liquid flow rate control valve is provided in which since a total area of overlapping sections of a communication hole group (38c, 38d) of a distributor (38) and an outlet opening (37a, 37b) of a sleeve (37) changes when the distributor (38) is rotated by a first electric motor (46), if a rotor (42) is rotated by means of a second electric motor (47), an input port (31e) communicates with an output port (31f) through an inlet opening (42c, 42d) of the rotor (42), the communication hole group (38c, 38d) of the distributor (38), and the outlet opening (37a, 37b) of the sleeve (37) when the inlet opening (42c, 42d) of the rotor (42) passes through the overlapping sections, thereby making it possible to carry out PWM control of a flow rate of liquid. Since a thrust load in an axis (L) direction does not act on the distributor (38) and the rotor (42), supporting the distributor (38) and the rotor (42) becomes easy, thereby enabling the cost and weight to be cut.
摘要翻译：提供了一种液体流量控制阀，其中由于套筒（37）的分配器（38）和出口（37a，37b）的连通孔组（38c，38d）的重叠部分的总面积改变，如果通过第二电动机（47）旋转转子（42），则分配器（38）由第一电动机（46）旋转，输入端口（31e）与输出端口（31f）通过转子（42）的入口（42c，42d），分配器（38）的连通孔组（38c，38d）和套筒（37）的出口开口（37a，37b）（42）的转子（42c，42d）通过重叠部分，从而可以对液体的流量进行PWM控制。由于轴（L）方向上的推力载荷不作用在分配器（38）和转子（42）上，支撑分配器（38）和转子（42）变得容易，从而使成本和重量成为切。

2. 发明申请

US20120234417A1 LIQUID FLOW RATE CONTROL VALVE 有权
标题翻译：液体流量控制阀
公开(公告)号：US20120234417A1
公开(公告)日：2012-09-20
申请号：US13497094
申请日：2010-09-30
申请人： Tsuneo Endo , Seiichiro Ishikawa , Hidemi Arai , Yuki Shibahata , Mitsuo Kadota , Hiroshi Hanabusa , Daiki Sato , Kensaku Yamamoto
发明人： Tsuneo Endo , Seiichiro Ishikawa , Hidemi Arai , Yuki Shibahata , Mitsuo Kadota , Hiroshi Hanabusa , Daiki Sato , Kensaku Yamamoto
IPC分类号： F16K3/26 , F16K11/12
CPC分类号： B60K6/12 , B60K6/40 , F02N7/08 , F15B13/0406 , F15B13/0444 , F16K3/262 , F16K3/34 , F16K5/0414 , Y02T10/6208 , Y02T10/6282 , Y10T137/3127 , Y10T137/86533 , Y10T137/86702 , Y10T137/8671 , Y10T137/86734 , Y10T137/86751 , Y10T137/88022
摘要： A liquid flow rate control valve is provided in which since a total area of overlapping sections of a communication hole group (38c, 38d) of a distributor (38) and an outlet opening (37a, 37b) of a sleeve (37) changes when the distributor (38) is rotated by a first electric motor (46), if a rotor (42) is rotated by means of a second electric motor (47), an input port (31e) communicates with an output port (31f) through an inlet opening (42c, 42d) of the rotor (42), the communication hole group (38c, 38d) of the distributor (38), and the outlet opening (37a, 37b) of the sleeve (37) when the inlet opening (42c, 42d) of the rotor (42) passes through the overlapping sections, thereby making it possible to carry out PWM control of a flow rate of liquid. Since a thrust load in an axis (L) direction does not act on the distributor (38) and the rotor (42), supporting the distributor (38) and the rotor (42) becomes easy, thereby enabling the cost and weight to be cut.
摘要翻译：提供了一种液体流量控制阀，其中由于套筒（37）的分配器（38）和出口（37a，37b）的连通孔组（38c，38d）的重叠部分的总面积改变，如果通过第二电动机（47）旋转转子（42），则分配器（38）由第一电动机（46）旋转，输入端口（31e）与输出端口（31f）通过转子（42）的入口（42c，42d），分配器（38）的连通孔组（38c，38d）和套筒（37）的出口开口（37a，37b）（42）的转子（42c，42d）通过重叠部分，从而可以对液体的流量进行PWM控制。由于轴（L）方向上的推力载荷不作用在分配器（38）和转子（42）上，支撑分配器（38）和转子（42）变得容易，从而使成本和重量成为切。

3. 发明授权

US07511315B2 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07511315B2
公开(公告)日：2009-03-31
申请号：US11108729
申请日：2005-04-19
申请人： Satoru Konishi , Tsuneo Endo , Hirokazu Nakajima , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura , Atsushi Kurokawa
发明人： Satoru Konishi , Tsuneo Endo , Hirokazu Nakajima , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura , Atsushi Kurokawa
IPC分类号： H01L21/00 , H01L29/34 , H01L23/48 , H01L21/4763
CPC分类号： H01L29/4933 , H01L21/84 , H01L23/4824 , H01L23/49844 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/16 , H01L29/456 , H01L29/7835 , H01L2224/1403 , H01L2224/16235 , H01L2224/1703 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has an external wiring for GND formed over an underside surface of a wiring substrate. A plurality of via holes connecting to the external wiring for GND are formed to penetrate the wiring substrate. A first semiconductor chip of high power consumption, including HBTs, is mounted over a principal surface of the wiring substrate. The emitter bump electrode of the first semiconductor chip is connected in common with emitter electrodes of a plurality of HBTs formed in the first semiconductor chip. The emitter bump electrode is extended in a direction in which the HBTs line up. The first semiconductor chip is mounted over the wiring substrate so that a plurality of the via holes are connected with the emitter bump electrode. A second semiconductor chip lower in heat dissipation value than the first semiconductor chip is mounted over the first semiconductor chip.
摘要翻译：半导体器件具有在布线基板的下表面上形成的用于GND的外部布线。连接到GND的外部配线的多个通孔形成为穿透布线基板。包括HBT的高功率的第一半导体芯片安装在布线基板的主表面上。第一半导体芯片的发射极电极与形成在第一半导体芯片中的多个HBT的发射极共同连接。发射极电极沿HBT排列的方向延伸。第一半导体芯片安装在布线基板上，使得多个通孔与发射极电极连接。散热值比第一半导体芯片低的第二半导体芯片安装在第一半导体芯片上。

4. 发明授权

US4880351A Variable capacity turbine 失效
标题翻译：可变容量涡轮机
公开(公告)号：US4880351A
公开(公告)日：1989-11-14
申请号：US054499
申请日：1987-05-27
申请人： Kazuo Inoue , Osamu Kubota , Shunji Yano , Fusao Tateishi , Etsuo Noda , Koji Yamaguchi , Tsuneo Endo
发明人： Kazuo Inoue , Osamu Kubota , Shunji Yano , Fusao Tateishi , Etsuo Noda , Koji Yamaguchi , Tsuneo Endo
IPC分类号： F01D17/16
CPC分类号： F01D17/165
摘要： Disclosed is a turbine comprising a turbine wheel, a turbine scroll passage defined in a turbine casing around the turbine wheel for introduction of gas to the turbine wheel, and an axial central passage defined in the turbine casing for ejection of gas from the turbine wheel, wherein: a plurality of variable nozzles are arranged outside of a throat section having a locally minimum cross section which is defined in the turbine casing around the turbine wheel. The variable nozzles may be defined by fixed vanes and moveable vanes which cooperate with each other in such a manner that each of the moveable vanes and the corresponding fixed vane define a substantially smooth and continuous airfoil. The moveable vanes may be pivotally supported by a back plate of the casing while the fixed vanes may be integrally provided with a fixed vane member having a disk portion which defines a surface opposing the inner surface of the back plate. The moveable vanes may rotate along and between these mutually opposing surfaces for varying the cross section of the nozzles defined between the fixed vanes and the moveable vanes.
摘要翻译：公开了一种涡轮机，其包括涡轮机叶轮，涡轮机涡旋通道，其限定在涡轮机壳体周围，用于将涡轮引入涡轮机叶轮，以及限定在涡轮机壳体中用于从涡轮机叶轮喷出气体的轴向中心通道，其中：多个可变喷嘴布置在具有限定在涡轮机壳体周围的涡轮机叶轮的局部最小横截面的喉部的外侧。可变喷嘴可以由固定叶片和可移动叶片限定，其彼此协作，使得每个可移动叶片和相应的固定叶片限定基本平滑且连续的翼型件。可移动叶片可以由壳体的背板可枢转地支撑，而固定叶片可以整体地设置有具有限定与背板的内表面相对的表面的盘部的固定叶片构件。可移动叶片可以在这些相互相对的表面之间并且在这些相互相对的表面之间旋转，以改变限定在固定叶片和可移动叶片之间的喷嘴的横截面。

5. 发明授权

US09150091B2 Liquid pressure circuit 有权
标题翻译：液压回路
公开(公告)号：US09150091B2
公开(公告)日：2015-10-06
申请号：US13498434
申请日：2010-09-30
申请人： Tsuneo Endo , Shigeru Ibaraki , Kazutaka Takahashi , Daiki Sato , Seiichiro Ishikawa
发明人： Tsuneo Endo , Shigeru Ibaraki , Kazutaka Takahashi , Daiki Sato , Seiichiro Ishikawa
IPC分类号： B60K6/12 , B60K6/40 , F02N7/08 , F16K3/26 , F16K3/34 , F15B13/04 , F15B13/044
CPC分类号： B60K6/12 , B60K6/40 , F02N7/08 , F15B13/0406 , F15B13/0444 , F16K3/262 , F16K3/34 , F16K5/0414 , Y02T10/6208 , Y02T10/6282 , Y10T137/3127 , Y10T137/86533 , Y10T137/86702 , Y10T137/8671 , Y10T137/86734 , Y10T137/86751 , Y10T137/88022
摘要： A liquid pressure circuit is provided in which connecting an accumulator (22) to a high pressure liquid path (Lh) by opening a cut-off valve (24a) and connecting a intake liquid path (Li) to the high pressure liquid path (Lh) by means of a switch valve (24b) enables a pump/motor (M) to be operated as a motor by liquid stored under pressure in the accumulator (22), connecting the accumulator (22) to the high pressure liquid path (Lh) by opening the cut-off valve (24a) and connecting the intake liquid path (Li) to a low pressure liquid path (Ll) by means of the switch valve (24b) enables the pump/motor (M) to be operated as a pump to thus store liquid of a tank (21) under pressure in the accumulator (22), and closing the cut-off valve (24a) and connecting the intake liquid path (Li) to the high pressure liquid path (Lh) by means of the switch valve (24b) enables the pump/motor (M) to rotate without load; it is therefore possible to switch between three circuits, that is, drive (motor operation), regeneration (pump operation), and neutral (load-free running) by a simple structure with a small number of components.
摘要翻译：提供一种液压回路，其通过打开截止阀（24a）并将进气液路径（Li）连接到高压液体通路（Lh）而将蓄能器（22）连接到高压液体通路（Lh））通过开关阀（24b）使得泵/马达（M）能够通过在储存器（22）中的压力下储存的液体作为电动机操作，将蓄能器（22）连接到高压液体路径（Lh ）通过打开截止阀（24a）并且通过开关阀（24b）将进气液路径（Li）连接到低压液体通路（L1）使得泵/马达（M）能够作为一个泵，用于将蓄液器（21）的液体在压力下储存在蓄能器（22）中，并且关闭截止阀（24a）并将进气流路（Li）连接到高压液体通路（Lh）上开关阀（24b）的装置使得泵/马达（M）能够无负载地旋转; 因此通过具有少量部件的简单结构，可以在三个电路之间切换，即驱动（电动机操作），再生（泵操作）和中性（无负载运行）。

6. 发明申请

US20120237362A1 LIQUID PRESSURE CIRCUIT 有权
标题翻译：液压电路
公开(公告)号：US20120237362A1
公开(公告)日：2012-09-20
申请号：US13498434
申请日：2010-09-30
申请人： Tsuneo Endo , Shigeru Ibaraki , Kazutaka Takahashi , Daiki Sato , Seiichiro Ishikawa
发明人： Tsuneo Endo , Shigeru Ibaraki , Kazutaka Takahashi , Daiki Sato , Seiichiro Ishikawa
IPC分类号： F04B49/00
CPC分类号： B60K6/12 , B60K6/40 , F02N7/08 , F15B13/0406 , F15B13/0444 , F16K3/262 , F16K3/34 , F16K5/0414 , Y02T10/6208 , Y02T10/6282 , Y10T137/3127 , Y10T137/86533 , Y10T137/86702 , Y10T137/8671 , Y10T137/86734 , Y10T137/86751 , Y10T137/88022
摘要： A liquid pressure circuit is provided in which connecting an accumulator (22) to a high pressure liquid path (Lh) by opening a cut-off valve (24a) and connecting a intake liquid path (Li) to the high pressure liquid path (Lh) by means of a switch valve (24b) enables a pump/motor (M) to be operated as a motor by liquid stored under pressure in the accumulator (22), connecting the accumulator (22) to the high pressure liquid path (Lh) by opening the cut-off valve (24a) and connecting the intake liquid path (Li) to a low pressure liquid path (Ll) by means of the switch valve (24b) enables the pump/motor (M) to be operated as a pump to thus store liquid of a tank (21) under pressure in the accumulator (22), and closing the cut-off valve (24a) and connecting the intake liquid path (Li) to the high pressure liquid path (Lh) by means of the switch valve (24b) enables the pump/motor (M) to rotate without load; it is therefore possible to switch between three circuits, that is, drive (motor operation), regeneration (pump operation), and neutral (load-free running) by a simple structure with a small number of components.
摘要翻译：提供一种液压回路，其通过打开截止阀（24a）并将进气液路径（Li）连接到高压液体通路（Lh）而将蓄能器（22）连接到高压液体通路（Lh））通过开关阀（24b）使得泵/马达（M）能够通过在储存器（22）中的压力下储存的液体作为电动机操作，将蓄能器（22）连接到高压液体路径（Lh ）通过打开截止阀（24a）并且通过开关阀（24b）将进气液路径（Li）连接到低压液体通路（L1）使得泵/马达（M）能够作为一个泵，用于将蓄液器（21）的液体在压力下储存在蓄能器（22）中，并且关闭截止阀（24a）并将进气流路（Li）连接到高压液体通路（Lh）上开关阀（24b）的装置使得泵/马达（M）能够无负载地旋转; 因此通过具有少量部件的简单结构，可以在三个电路之间切换，即驱动（电动机操作），再生（泵操作）和中性（无负载运行）。

7. 发明申请

US20090194792A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090194792A1
公开(公告)日：2009-08-06
申请号：US12413010
申请日：2009-03-27
申请人： Satoru Konishi , Tsuneo Endo , Hirokazu Nakajima , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura , Atsushi Kurokawa
发明人： Satoru Konishi , Tsuneo Endo , Hirokazu Nakajima , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura , Atsushi Kurokawa
IPC分类号： H01L27/082 , H01L23/498
CPC分类号： H01L29/4933 , H01L21/84 , H01L23/4824 , H01L23/49844 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/16 , H01L29/456 , H01L29/7835 , H01L2224/1403 , H01L2224/16235 , H01L2224/1703 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has an external wiring for GND formed over an underside surface of a wiring substrate. A plurality of via holes connecting to the external wiring for GND are formed to penetrate the wiring substrate. A first semiconductor chip of high power consumption, including HBTs, is mounted over a principal surface of the wiring substrate. The emitter bump electrode of the first semiconductor chip is connected in common with emitter electrodes of a plurality of HBTs formed in the first semiconductor chip. The emitter bump electrode is extended in a direction in which the HBTs line up. The first semiconductor chip is mounted over the wiring substrate so that a plurality of the via holes are connected with the emitter bump electrode. A second semiconductor chip lower in heat dissipation value than the first semiconductor chip is mounted over the first semiconductor chip.
摘要翻译：半导体器件具有在布线基板的下表面上形成的用于GND的外部布线。连接到GND的外部配线的多个通孔形成为穿透布线基板。包括HBT的高功率的第一半导体芯片安装在布线基板的主表面上。第一半导体芯片的发射极电极与形成在第一半导体芯片中的多个HBT的发射极共同连接。发射极电极沿HBT排列的方向延伸。第一半导体芯片安装在布线基板上，使得多个通孔与发射极电极连接。散热值比第一半导体芯片低的第二半导体芯片安装在第一半导体芯片上。

8. 发明申请

US20050258452A1 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050258452A1
公开(公告)日：2005-11-24
申请号：US11108729
申请日：2005-04-19
申请人： Satoru Konishi , Tsuneo Endo , Hirokazu Nakajima , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura , Atsushi Kurokawa
发明人： Satoru Konishi , Tsuneo Endo , Hirokazu Nakajima , Yasunari Umemoto , Satoshi Sasaki , Chushiro Kusano , Yoshinori Imamura , Atsushi Kurokawa
IPC分类号： H01L21/28 , H01L21/331 , H01L21/8222 , H01L21/84 , H01L23/34 , H01L23/482 , H01L23/498 , H01L25/065 , H01L25/07 , H01L25/16 , H01L25/18 , H01L27/082 , H01L29/417 , H01L29/423 , H01L29/45 , H01L29/49 , H01L29/737 , H01L29/739 , H01L29/78
CPC分类号： H01L29/4933 , H01L21/84 , H01L23/4824 , H01L23/49844 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/16 , H01L29/456 , H01L29/7835 , H01L2224/1403 , H01L2224/16235 , H01L2224/1703 , H01L2224/32145 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014 , H01L2924/01078 , H01L2924/01079 , H01L2924/1305 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/181 , H01L2924/19041 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has an external wiring for GND formed over an underside surface of a wiring substrate. A plurality of via holes connecting to the external wiring for GND are formed to penetrate the wiring substrate. A first semiconductor chip of high power consumption, including HBTs, is mounted over a principal surface of the wiring substrate. The emitter bump electrode of the first semiconductor chip is connected in common with emitter electrodes of a plurality of HBTs formed in the first semiconductor chip. The emitter bump electrode is extended in a direction in which the HBTs line up. The first semiconductor chip is mounted over the wiring substrate so that a plurality of the via holes are connected with the emitter bump electrode. A second semiconductor chip lower in heat dissipation value than the first semiconductor chip is mounted over the first semiconductor chip.
摘要翻译：半导体器件具有在布线基板的下表面上形成的用于GND的外部布线。连接到GND的外部配线的多个通孔形成为穿透布线基板。包括HBT的高功率的第一半导体芯片安装在布线基板的主表面上。第一半导体芯片的发射极电极与形成在第一半导体芯片中的多个HBT的发射极共同连接。发射极电极沿HBT排列的方向延伸。第一半导体芯片安装在布线基板上，使得多个通孔与发射极电极连接。散热值比第一半导体芯片低的第二半导体芯片安装在第一半导体芯片上。

9. 发明授权

US4352510A Support bracket 失效
标题翻译：支架
公开(公告)号：US4352510A
公开(公告)日：1982-10-05
申请号：US043700
申请日：1979-05-30
申请人： Yoshihiro Saito , Shigeru Sakai , Tsuneo Endo
发明人： Yoshihiro Saito , Shigeru Sakai , Tsuneo Endo
IPC分类号： B60K17/16 , B60K5/12 , F16F15/08 , B60S5/00
CPC分类号： B60K5/1208 , F16F15/08
摘要： The present invention relates to a bracket which can mount different units to a vehicle body without the use of additional spacers or the like. The bracket has an offset support bolt so that upon the bracket being seated in a 180 degree reversed orientation, the bolt assumes a new position with respect to the vehicle body so that a different unit can be mounted using the same number of parts.
摘要翻译：本发明涉及一种可以将不同单元安装到车身上而不需要使用附加间隔件等的托架。支架具有偏移支撑螺栓，使得当支架以180度反向定位时，螺栓相对于车身呈现新的位置，从而可以使用相同数量的部件来安装不同的单元。

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