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    • 1. 发明申请
    • DETERMINING SOFT DATA FOR COMBINATIONS OF MEMORY CELLS
    • 确定记忆细胞组合的软数据
    • US20130272071A1
    • 2013-10-17
    • US13444443
    • 2012-04-11
    • Violante MoschianoTommaso ValiMark A. Hawes
    • Violante MoschianoTommaso ValiMark A. Hawes
    • G11C16/10G11C16/04
    • G11C11/5628G11C16/0483G11C16/10G11C16/26
    • The present disclosure includes apparatuses and methods for determining soft data for combinations of memory cells. A number of embodiments include an array of memory cells including a first and a second memory cell each programmable to one of a number of program states, wherein a combination of the program states of the first and second memory cells corresponds to one of a number of data states, and a buffer and/or a controller coupled to the array and configured to determine soft data associated with the program states of the first and second memory cells and soft data associated with the data state that corresponds to the combination of the program states of the first and second memory cells based, at least in part, on the soft data associated with the program states of the first and second memory cells.
    • 本公开包括用于确定存储器单元的组合的软数据的装置和方法。 多个实施例包括存储单元的阵列,其包括第一和第二存储单元,每个第一和第二存储器单元可编程为多个程序状态之一,其中第一和第二存储器单元的编程状态的组合对应于多个 数据状态,以及耦合到阵列并被配置为确定与第一和第二存储器单元的程序状态相关联的软数据的缓冲器和/或控制器以及与对应于程序状态的组合的数据状态相关联的软数据 至少部分地基于与第一和第二存储器单元的程序状态相关联的软数据。
    • 10. 发明授权
    • Methods and apparatuses for refreshing non-volatile memory
    • 用于刷新非易失性存储器的方法和装置
    • US07535787B2
    • 2009-05-19
    • US11810550
    • 2007-06-06
    • Daniel ElmhurstViolante MoschianoPaul Ruby
    • Daniel ElmhurstViolante MoschianoPaul Ruby
    • G11C7/00
    • G11C16/3418G11C11/406G11C16/0483G11C2211/4062
    • Methods and apparatuses for refreshing non-volatile memories due to changes in memory cell charges, such as charge loss, are disclosed. Embodiments generally comprise a voltage generator to create a sub-threshold voltage for a memory state of memory cells in a block. Once the sub-threshold voltage is applied to a word line a state reader determines states of memory cells coupled to the word line. If the state reader determines that one or more of the memory cells coupled to the word line is in the memory state, despite the sub-threshold voltage, a memory refresher may program a number of memory cells in the block. Method embodiments generally comprise applying a sub-threshold voltage to a word line for a plurality of memory cells, detecting at least one memory cell of the plurality violates a state parameter, and refreshing a block of memory cells associated with the plurality of cells.
    • 公开了由于诸如电荷损失的存储器单元费用的变化而刷新非易失性存储器的方法和装置。 实施例通常包括电压发生器以产生用于块中的存储器单元的存储器状态的次阈值电压。 一旦子阈值电压被施加到字线,状态读取器就确定耦合到字线的存储器单元的状态。 如果状态读取器确定耦合到字线的一个或多个存储器单元处于存储器状态,尽管存在子阈值电压,存储器刷新器可以对块中的多个存储单元进行编程。 方法实施例通常包括将子阈值电压施加到多个存储器单元的字线,检测多个存储单元中的至少一个存储单元违反状态参数,以及刷新与多个单元相关联的存储单元块。