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1. 发明授权

US09252326B2 Light emitting device having a plurality of light emitting cells 有权
标题翻译：具有多个发光单元的发光器件
公开(公告)号：US09252326B2
公开(公告)日：2016-02-02
申请号：US13009284
申请日：2011-01-19
申请人： Kyung Hee Ye , Dae Sung Cho , Won Cheol Seo , Young Eun Yang , Sum Geun Lee
发明人： Kyung Hee Ye , Dae Sung Cho , Won Cheol Seo , Young Eun Yang , Sum Geun Lee
IPC分类号： F21S4/00 , H01L33/08 , H05B33/08 , H01L27/15 , H01L33/38 , H01L33/62
CPC分类号： H01L33/08 , H01L27/156 , H01L33/20 , H01L33/38 , H01L33/62 , H01L2924/0002 , H05B33/0821 , H01L2924/00
摘要： The present invention relates to a light emitting device including at least three pairs of half-wave light emitting units, each pair including a terminal of a first half-wave light emitting unit connected to a terminal of a second half-wave light emitting unit, the terminals having the same polarity, a polarity of the connected terminals of one half-wave light emitting unit pair being opposite to the polarity of the connected terminals of an adjacent half-wave light emitting unit. The light emitting device also includes at least two full-wave light emitting units each connected to adjacent pairs of half-wave light emitting units. The half-wave light emitting units and the full-wave light emitting units each have at least one light emitting cell, the half-wave light emitting units each have a first terminal and a second terminal, the full-wave light emitting units each have a third terminal having the same polarity as the first terminal and a fourth terminal having the same polarity as the second terminal, and the third terminal of each full-wave light emitting unit being connected to the second terminal of adjacent half-wave light emitting units and the fourth terminal of each half-wave light emitting unit being connected to the first terminal of adjacent half-wave light emitting units.
摘要翻译：本发明涉及一种包括至少三对半波发光单元的发光器件，每一对包括连接到第二半波发光单元的端子的第一半波发光单元的端子，具有相同极性的端子，一个半波发光单元对的连接端子的极性与相邻半波发光单元的连接端子的极性相反。发光器件还包括至少两个全波发光单元，每个全波发光单元各自连接到相邻的半波发光单元对。半波发光单元和全波发光单元各自具有至少一个发光单元，半波发光单元各自具有第一端子和第二端子，全波发光单元各自具有具有与第一端子极性相同的第三端子和与第二端子具有相同极性的第四端子，并且每个全波发光单元的第三端子连接到相邻半波发射单元的第二端子并且每个半波发光单元的第四端子连接到相邻的半波发光单元的第一端子。

2. 发明授权

US09224917B2 Light emitting diode having photonic crystal structure and method of fabricating the same 有权
标题翻译：具有光子晶体结构的发光二极管及其制造方法
公开(公告)号：US09224917B2
公开(公告)日：2015-12-29
申请号：US13984147
申请日：2012-01-17
申请人： Won Cheol Seo , Joo Won Choi
发明人： Won Cheol Seo , Joo Won Choi
IPC分类号： H01L33/22 , H01L33/10 , H01L33/00 , H01L33/20
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L2933/0083
摘要： Disclosed are a light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. An LED comprises a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, an active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure may prevent the loss of the light advancing toward the support substrate and improve the light extraction efficiency.
摘要翻译：公开了具有光子晶体结构的发光二极管（LED）及其制造方法。 LED包括支撑衬底，位于支撑衬底上的下半导体层，位于下半导体层之上的上半导体层，位于下半导体层和上半导体层之间的有源区，以及嵌入在下半导体中的光子晶体结构层。光子晶体结构可以防止光朝着支撑基板前进的损失，并提高光提取效率。

3. 发明授权

US09202972B2 Light emitting device having a plurality of light emitting cells 有权
公开(公告)号：US09202972B2
公开(公告)日：2015-12-01
申请号：US13009284
申请日：2011-01-19
申请人： Kyung Hee Ye , Dae Sung Cho , Won Cheol Seo , Young Eun Yang , Sum Geun Lee
发明人： Kyung Hee Ye , Dae Sung Cho , Won Cheol Seo , Young Eun Yang , Sum Geun Lee
IPC分类号： F21S4/00 , H01L33/08 , H05B33/08 , H01L27/15 , H01L33/38 , H01L33/62
摘要： The present invention relates to a light emitting device including at least three pairs of half-wave light emitting units, each pair including a terminal of a first half-wave light emitting unit connected to a terminal of a second half-wave light emitting unit, the terminals having the same polarity, a polarity of the connected terminals of one half-wave light emitting unit pair being opposite to the polarity of the connected terminals of an adjacent half-wave light emitting unit. The light emitting device also includes at least two full-wave light emitting units each connected to adjacent pairs of half-wave light emitting units. The half-wave light emitting units and the full-wave light emitting units each have at least one light emitting cell, the half-wave light emitting units each have a first terminal and a second terminal, the full-wave light emitting units each have a third terminal having the same polarity as the first terminal and a fourth terminal having the same polarity as the second terminal, and the third terminal of each full-wave light emitting unit being connected to the second terminal of adjacent half-wave light emitting units and the fourth terminal of each half-wave light emitting unit being connected to the first terminal of adjacent half-wave light emitting units.

4. 发明授权

US08937327B2 Light emitting device having plurality of light emitting cells and method of fabricating the same 有权
标题翻译：具有多个发光单元的发光器件及其制造方法
公开(公告)号：US08937327B2
公开(公告)日：2015-01-20
申请号：US13202210
申请日：2010-03-24
申请人： Won Cheol Seo , Dae Sung Kal , Joon Hee Lee , Chang Youn Kim
发明人： Won Cheol Seo , Dae Sung Kal , Joon Hee Lee , Chang Youn Kim
IPC分类号： H01L33/00 , H01L25/075 , H01L27/15 , H01L33/38 , H01L33/40 , H01L33/64
CPC分类号： H01L25/0753 , H01L27/153 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L33/641 , H01L2224/73265 , H01L2224/92247 , H01L2933/0016
摘要： A light emitting device having a plurality of light emitting cells is disclosed. The light emitting device comprises a substrate; a plurality of light emitting cells positioned on the substrate to be spaced apart from one another, each of the light emitting cells comprising a p-type lower semiconductor layer, an active layer and an n-type upper semiconductor layer; p-electrodes positioned to be spaced apart from one another between the substrate and the light emitting cells, the respective p-electrodes being electrically connected to the corresponding lower semiconductor layers, each of the p-electrodes having an extension extending toward adjacent one of the light emitting cells; n-electrodes disposed on upper surfaces of the respective light emitting cells, wherein a contact surface of each of the n-electrodes electrically contacting with each light emitting cell exists both sides of any straight line that bisects the light emitting cell across the center of the upper surface of the light emitting cell; a side insulating layer for covering sides of the light emitting cells; and wires for connecting the p-electrodes and the n-electrodes, the wires being spaced apart from the sides of the light emitting cells by the side insulating layer.
摘要翻译：公开了一种具有多个发光单元的发光器件。发光器件包括衬底; 位于所述基板上的多个发光单元彼此间隔开，每个所述发光单元包括p型下半导体层，有源层和n型上半导体层; p电极被定位成在衬底和发光单元之间彼此间隔开，各个p电极电连接到相应的下半导体层，每个p电极具有延伸到相邻的一个发光单元; 设置在各个发光单元的上表面上的n电极，其中与每个发光单元电接触的每个n电极的接触表面存在于将所述发光单元平分在所述发光单元的中心的任何直线的两侧发光单元的上表面; 用于覆盖所述发光单元的侧面的侧绝缘层; 以及用于连接p电极和n电极的电线，电线通过侧绝缘层与发光单元的侧面间隔开。

5. 发明授权

US08680559B2 Light emitting diode having electrode extensions for current spreading 有权
标题翻译：具有用于电流扩展的电极延伸的发光二极管
公开(公告)号：US08680559B2
公开(公告)日：2014-03-25
申请号：US12941536
申请日：2010-11-08
申请人： Kyoung Wan Kim , Soo Young Moon , Kyu Ho Lee , Yeo Jin Yoon , Jeong Hee Yang , Won Cheol Seo
发明人： Kyoung Wan Kim , Soo Young Moon , Kyu Ho Lee , Yeo Jin Yoon , Jeong Hee Yang , Won Cheol Seo
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： An exemplary embodiment of the present invention discloses a light emitting diode including a substrate having a first edge and a second edge opposite to each other, a light emitting structure disposed on the substrate, the light emitting structure including a first semiconductor layer and a second semiconductor layer, a plurality of first electrode pads arranged on an upper surface of the first semiconductor layer, the first electrode pads arranged in a vicinity of the first edge, a plurality of second electrode pads arranged on the second semiconductor layer, the second electrode pads arranged in a vicinity of the second edge, a plurality of first extensions, each first extension extending from a first electrode pad, and a plurality of second extensions, each second extension extending from a second electrode pad. The first extensions include intrusion parts extending in a direction from the first edge to the second edge, wherein the intrusion parts are spaced apart from each other and not connecting with the second electrode pads. Further, the second extensions include intrusion parts extending in a direction from the second edge to the first edge, wherein the first extension intrusion parts each extend into a region between two of the second extension intrusion parts.
摘要翻译：本发明的一个示例性实施例公开了一种发光二极管，其包括具有彼此相对的第一边缘和第二边缘的基板，设置在基板上的发光结构，所述发光结构包括第一半导体层和第二半导体布置在第一半导体层的上表面上的多个第一电极焊盘，布置在第一边缘附近的第一电极焊盘，布置在第二半导体层上的多个第二电极焊盘，布置在第二半导体层上的第二电极焊盘在第二边缘附近，多个第一延伸部，每个第一延伸部从第一电极焊盘延伸，以及多个第二延伸部，每个第二延伸部从第二电极焊盘延伸。第一延伸部包括在从第一边缘到第二边缘的方向上延伸的侵入部分，其中入侵部分彼此间隔开并且不与第二电极焊盘连接。此外，第二延伸部包括在从第二边缘到第一边缘的方向上延伸的侵入部分，其中第一延伸入侵部分各自延伸到两个第二延伸入侵部分之间的区域中。

6. 发明申请

US20130320301A1 LIGHT EMITTING DIODE HAVING PHOTONIC CRYSTAL STRUCTURE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有光子晶体结构的发光二极管及其制造方法
公开(公告)号：US20130320301A1
公开(公告)日：2013-12-05
申请号：US13984147
申请日：2012-01-17
申请人： Won Cheol Seo , Joo Won Choi
发明人： Won Cheol Seo , Joo Won Choi
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L2933/0083
摘要： Disclosed are a light emitting diode (LED) having a photonic crystal structure and a method of fabricating the same. An LED comprises a support substrate, a lower semiconductor layer positioned on the support substrate, an upper semiconductor layer positioned over the lower semiconductor layer, an active region positioned between the lower and upper semiconductor layers, and a photonic crystal structure embedded in the lower semiconductor layer. The photonic crystal structure may prevent the loss of the light advancing toward the support substrate and improve the light extraction efficiency.
摘要翻译：公开了具有光子晶体结构的发光二极管（LED）及其制造方法。 LED包括支撑衬底，位于支撑衬底上的下半导体层，位于下半导体层之上的上半导体层，位于下半导体层和上半导体层之间的有源区，以及嵌入在下半导体中的光子晶体结构层。光子晶体结构可以防止光朝着支撑基板前进的损失，并提高光提取效率。

7. 发明申请

US20130126829A1 HIGH EFFICIENCY LIGHT EMITTING DIODE 审中-公开
标题翻译：高效发光二极管
公开(公告)号：US20130126829A1
公开(公告)日：2013-05-23
申请号：US13812944
申请日：2010-12-01
申请人： Yeo Jin Yoon , Won Cheol Seo
发明人： Yeo Jin Yoon , Won Cheol Seo
IPC分类号： H01L33/10
CPC分类号： H01L33/10 , H01L33/0079 , H01L33/20 , H01L33/38 , H01L33/405 , H01L33/46 , H01L2933/0091
摘要： A high-efficiency LED includes a substrate, an n-semiconductor layer, an active layer, a p-semiconductor layer, and a transparent electrode layer. The substrate has a plurality of tapered recesses in the underside thereof, the recesses being filled with light-reflecting filler.
摘要翻译：高效率LED包括衬底，n半导体层，有源层，p半导体层和透明电极层。衬底在其下侧具有多个锥形凹部，凹部填充有光反射填料。

8. 发明授权

US08354680B2 AC light emitting diode having full-wave light emitting cell and half-wave light emitting cell 有权
标题翻译：交流发光二极管具有全波发光单元和半波发光单元
公开(公告)号：US08354680B2
公开(公告)日：2013-01-15
申请号：US12882406
申请日：2010-09-15
申请人： Dae Sung Kal , Won Cheol Seo , Jang Woo Lee , Jin Cheol Shin , Jong Kyu Kim , Sang Ki Jin , So Ra Lee
发明人： Dae Sung Kal , Won Cheol Seo , Jang Woo Lee , Jin Cheol Shin , Jong Kyu Kim , Sang Ki Jin , So Ra Lee
IPC分类号： H01L33/00
CPC分类号： H01L27/156 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses an alternating current (AC) light emitting diode (LED) having half-wave light emitting cells and full-wave light emitting cells. The AC LED has a plurality of light emitting cells electrically connected between bonding pads on a single substrate. The AC LED includes a first row of half-wave light emitting cells each having an anode terminal and a cathode terminal, a second row of full-wave light emitting cells each having an anode terminal and a cathode terminal, and a third row of half-wave light emitting cells each having an anode terminal and a cathode terminal. In the AC LED, the second row is arranged between the first row and the third row, and the third row includes a pair of light emitting cells that share a cathode terminal with each other. The cathode terminal shared by the pair of light emitting cells in the third row is electrically connected to the anode terminal of a corresponding light emitting cell of the half-wave light emitting cells in the first row through a conductor that is electrically insulated from the full-wave light emitting cells in the second row.
摘要翻译：本发明公开了一种具有半波发光单元和全波发光单元的交流（AC）发光二极管（LED）。 AC LED具有电连接在单个基板上的焊盘之间的多个发光单元。 AC LED包括具有阳极端子和阴极端子的第一排半波发光单元，具有阳极端子和阴极端子的第二排全波发光单元，以及第三排半波发光单元每个具有阳极端子和阴极端子的发光单元。在AC LED中，第二行布置在第一行和第三行之间，第三行包括彼此共享阴极端子的一对发光单元。由第三行中的一对发光单元共享的阴极端子通过与整体电绝缘的导体电连接到第一行中的半波发光单元的对应的发光单元的阳极端子 - 第二排发光单元。

9. 发明授权

US08324650B2 Light emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08324650B2
公开(公告)日：2012-12-04
申请号：US13240501
申请日：2011-09-22
申请人： Won Cheol Seo , Sum Geun Lee
发明人： Won Cheol Seo , Sum Geun Lee
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2224/73265 , H01L2224/92247
摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell.
摘要翻译：公开了一种发光器件及其制造方法。发光装置包括：基板; 第一和第二发光单元，每个包括第一半导体层，有源层和第二半导体层; 以及位于第一和第二发光单元和基板之间的连接器，以将第一和第二发光单元彼此电连接。连接器从第一发光单元的第二半导体层延伸穿过衬底，并且穿过第二半导体层的中心区域和第二发光单元的有源层，以与第二发光单元的第一半导体层接触。

10. 发明授权

US08294170B2 Light emitting device and method of fabricating the same 有权
公开(公告)号：US08294170B2
公开(公告)日：2012-10-23
申请号：US13077395
申请日：2011-03-31
申请人： Won Cheol Seo , Sum Geun Lee
发明人： Won Cheol Seo , Sum Geun Lee
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2224/73265 , H01L2224/92247
摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell.

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