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1. 发明授权

US08916931B2 LDMOS semiconductor device with parasitic bipolar transistor for reduced surge current 有权
标题翻译： LDMOS半导体器件具有寄生双极晶体管，可减少浪涌电流
公开(公告)号：US08916931B2
公开(公告)日：2014-12-23
申请号：US13286832
申请日：2011-11-01
申请人： Yasuhiro Takeda , Seiji Otake
发明人： Yasuhiro Takeda , Seiji Otake
IPC分类号： H01L29/772 , H01L29/78 , H01L29/08 , H01L29/10
CPC分类号： H01L29/7816 , H01L29/0873 , H01L29/0878 , H01L29/1083 , H01L29/1087 , H01L29/1095 , H01L29/7823 , H01L29/7835
摘要： An N type layer made of an N type epitaxial layer in which an N+ type drain layer etc are formed is surrounded by a P type drain isolation layer extending from the front surface of the N type epitaxial layer to an N+ type buried layer. A P type collector layer is formed in an N type layer made of the N type epitaxial layer surrounded by the P type drain isolation layer and a P type element isolation layer, extending from the front surface to the inside of the N type layer. A parasitic bipolar transistor that uses the first conductive type drain isolation layer as the emitter, the second conductive type N type layer as the base, and the collector layer as the collector is thus formed so as to flow a surge current into a ground line.
摘要翻译：由形成有N +型漏极层等的N型外延层构成的N型层由从N型外延层的前表面延伸到N +型掩埋层的P型漏极隔离层包围。在由P型漏极隔离层包围的N型外延层构成的N型层和从N型层的前表面延伸到内部的P型元件隔离层形成P型集电极层。因此，形成使用第一导电型漏极隔离层作为发射极，第二导电型N型层作为基极的集电极层作为集电极的寄生双极型晶体管，以将浪涌电流流入地线。

2. 发明授权

US08692330B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08692330B2
公开(公告)日：2014-04-08
申请号：US13529774
申请日：2012-06-21
申请人： Yuzo Otsuru , Yasuhiro Takeda , Shigeyuki Sugihara , Shinya Inoue
发明人： Yuzo Otsuru , Yasuhiro Takeda , Shigeyuki Sugihara , Shinya Inoue
IPC分类号： H01L23/60
CPC分类号： H01L27/0277 , H01L21/823425 , H01L27/0207 , H01L29/0692 , H01L29/1045 , H01L29/1087 , H01L29/41758 , H01L29/4238 , H01L29/4933 , H01L29/665 , H01L29/7833
摘要： A semiconductor device equally turns on the parasitic bipolar transistors in the finger portions of the finger form source and drain electrodes when a surge voltage is applied, even with the P+ type contact layer surrounding the N+ type source layers and the N+ type drain layers connected to the finger form source and drain electrodes. A P+ type contact layer surrounds N+ type source layers and N+ type drain layers. Metal silicide layers are formed on the N+ type source layers, the N+ type drain layers, and a portion of the P+ type contact layer. Finger form source electrodes, finger form drain electrodes, and a P+ type contact electrode surrounding these finger form electrodes are formed, being connected to the metal silicide layers respectively through contact holes formed in an interlayer insulation film deposited on the metal silicide layers.
摘要翻译：半导体器件即使在围绕N +型源极层的N +型漏极层和N +型漏极层连接的P +型接触层的同时，也在施加浪涌电压时同时导通手指形状的源极和漏极的手指部分中的寄生双极晶体管手指形成源极和漏极。 P +型接触层包围N +型源极层和N +型漏极层。金属硅化物层形成在N +型源极层，N +型漏极层和P +型接触层的一部分上。形成手指形状的源电极，手指形状的漏电极和围绕这些指状电极的P +型接触电极，分别通过形成在沉积在金属硅化物层上的层间绝缘膜中的接触孔连接到金属硅化物层。

3. 发明授权

US08641887B2 Gas decomposition apparatus and method for decomposing gas 有权
标题翻译：气体分解装置及气体分解方法
公开(公告)号：US08641887B2
公开(公告)日：2014-02-04
申请号：US12936889
申请日：2009-04-02
申请人： Masatoshi Majima , Shinji Inazawa , Koji Nitta , Masahiro Yamakawa , Takayasu Sugihara , Yasuhiro Takeda , Yoshihiro Akahane , Takahiro Imai
发明人： Masatoshi Majima , Shinji Inazawa , Koji Nitta , Masahiro Yamakawa , Takayasu Sugihara , Yasuhiro Takeda , Yoshihiro Akahane , Takahiro Imai
IPC分类号： B01D59/40
CPC分类号： B01D53/326 , A61L9/012 , A61L9/014 , A61L9/16 , A61L2209/213 , A61L2209/22 , B01D53/32 , B01D53/8668 , B01D53/88 , B01D61/422 , B01D69/10 , B01D69/12 , B01D69/145 , B01D71/36 , B01D2251/11 , B01D2255/102 , B01D2255/9202 , B01D2257/7027 , B01D2257/90 , B01J35/0033
摘要： [Object] To provide a gas decomposition apparatus and a gas decomposition method in which no safety problems occur in spite of the application of a relatively high voltage between an anode and a cathode for the purpose of decomposing odorous gases of many types.[Solution] A catalytic electrode layer 6 that contains a catalyst and is porous; a counter electrode layer 7 that forms a pair with the catalytic electrode; and an electrolyte layer 15 that is sandwiched between the catalytic electrode and the counter electrode and has ion conductivity are included. The catalyst is held by the catalytic electrode in the form of being carried by a carrier containing a conductive material or the catalyst is directly carried by the catalytic electrode. A conductive material in the catalytic electrode, the conductive material being in contact with the catalyst, is not a noncovalent carbon material.
摘要翻译：本发明提供一种气体分解装置和气体分解方法，其中为了分解多种恶臭气体，在阳极和阴极之间施加相当高的电压时，不会出现安全问题。 [溶液]含有催化剂且为多孔的催化剂电极层6; 与催化电极形成一对的对电极层7; 并且包括夹在催化电极和对电极之间并具有离子传导性的电解质层15。该催化剂由催化电极保持，其形式是由含有导电材料的载体携带，或催化剂由催化电极直接携带。催化电极中的导电材料与导电材料接触不是非共价碳材料。

4. 发明申请

US20130075865A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130075865A1
公开(公告)日：2013-03-28
申请号：US13612224
申请日：2012-09-12
申请人： Seiji OTAKE , Yasuhiro TAKEDA , Yuta MIYAMOTO
发明人： Seiji OTAKE , Yasuhiro TAKEDA , Yuta MIYAMOTO
IPC分类号： H01L27/06
CPC分类号： H01L27/0259
摘要： An ESD protection element is formed by a PN junction diode including an N+ type buried layer having a proper impurity concentration and a first P+ type buried layer and a parasitic PNP bipolar transistor which uses a second P+ type buried layer connected to a P+ type diffusion layer as the emitter, an N− type epitaxial layer as the base, and the first P+ type buried layer as the collector. The first P+ type buried layer is connected to an anode electrode, and the P+ type diffusion layer and an N+ type diffusion layer surrounding the P+ type diffusion layer are connected to a cathode electrode. When a large positive static electricity is applied to the cathode electrode, and the parasitic PNP bipolar transistor turns on to flow a large discharge current.
摘要翻译： ESD保护元件由包括具有适当杂质浓度的N +型掩埋层和第一P +型掩埋层的PN结二极管和使用连接到P +型扩散层的第二P +型掩埋层的寄生PNP双极晶体管形成作为发射极，以N型外延层为基底，第一P +型埋层作为集电体。第一P +型埋层与阳极连接，P +型扩散层和围绕P +型扩散层的N +型扩散层与阴极电极连接。当向阴极施加大的正静电时，并且寄生PNP双极晶体管导通以流过大的放电电流。

5. 发明申请

US20120318253A1 POROUS FILM FOR BAG-CONSTITUTING MEMBER AND BAG-CONSTITUTING MEMBER FOR DISPOSABLE BODY WARMER 审中-公开
标题翻译：用于袋装配件的多孔膜和不可思议的身体保暖的组合构件
公开(公告)号：US20120318253A1
公开(公告)日：2012-12-20
申请号：US13486211
申请日：2012-06-01
申请人： Hiroshi Nagami , Yasuhiro Takeda
发明人： Hiroshi Nagami , Yasuhiro Takeda
IPC分类号： C08L23/06 , B65D30/04 , A61F7/08
CPC分类号： B29C55/005 , B29C55/06 , B29K2023/0625 , B29K2105/04 , B29K2105/16 , B32B5/022 , B32B7/14 , B32B27/12 , B32B27/205 , B32B27/32 , B32B2250/02 , B32B2262/0261 , B32B2264/104 , B32B2270/00 , B32B2307/31 , B32B2307/516 , B32B2307/5825 , B32B2307/706 , B32B2307/72 , B32B2439/06 , C08L23/06 , C08L23/0815 , C08L2205/02
摘要： Disclosed is a porous film for a bag-constituting member prepared by stretching an unstretched film to be porous. The unstretched film is made from a material composition essentially including a linear low-density polyethylene; an olefinic copolymer having a Vicat softening point of from 20° C. to 50° C. and a density of less than 0.900 g/cm3; and an inorganic filler. The porous film excels in low-temperature heat sealability and gives a bag-constituting member for a body warmer.
摘要翻译：公开了通过将未拉伸膜拉伸成多孔而制备的袋构成构件的多孔膜。未拉伸膜由基本上包括线性低密度聚乙烯的材料组合物制成; 维卡软化点为20℃至50℃，密度小于0.900克/厘米3的烯烃共聚物; 和无机填料。多孔膜在低温热封性方面优异，并且提供了用于体温的袋构成构件。

6. 发明授权

US08230988B2 Apparatus for transferring vehicles onto conveyor 有权
标题翻译：将车辆运送到输送机上的装置
公开(公告)号：US08230988B2
公开(公告)日：2012-07-31
申请号：US12922030
申请日：2009-03-02
申请人： Shoji Tada , Yoshifumi Yasuda , Junichi Miura , Yasuhiro Takeda
发明人： Shoji Tada , Yoshifumi Yasuda , Junichi Miura , Yasuhiro Takeda
IPC分类号： B65G37/00
CPC分类号： B62D65/18 , B61B10/04
摘要： An apparatus for transferring vehicles onto a conveyer comprises: a front wheel supporting device (6) on an elevator (5), which is provided with a pair of front and rear wheel supporting arms (29a, 29b) that freely open and close in a horizontal direction between a closed posture supporting front wheels (Wf) at a predetermined position in terms of the convey direction and an opened posture releasing the front wheels (Wf) to the convey direction; a rear wheel supporting device (7) on the elevator (5), which is provided with a wheel supporting plate (38) that supports rear wheels (Wr) without determining the position thereof in terms of the convey direction and can switch its posture between a horizontal posture and a front-down tilted posture in terms of the convey direction; and a posture switching device (40) that changes the wheel supporting plate (38) of the rear wheel supporting device (7) to the tilted posture, at least when the elevator (5), supporting a vehicle (C) with the wheel supporting arms (29a, 29b) of the front wheel supporting device (6) in the closed posture and the wheel supporting plate (38) of the rear wheel supporting device (7) in the horizontal posture, is at the lowermost position for transferring the vehicle (C) onto a conveyor (1).
摘要翻译：一种用于将车辆传送到输送机上的装置，包括：电梯（5）上的前轮支撑装置（6），其设有一对前轮和后轮支撑臂（29a，29b）在输送方向上的预定位置处支撑前轮（Wf）的关闭姿势和将前轮（Wf）释放到输送方向的打开姿势之间的水平方向; 在电梯（5）上的后轮支撑装置（7），其设置有支撑后轮（Wr）的车轮支撑板（38），而不确定其在传送方向上的位置，并且可以在其之间切换其姿态就输送方向而言，水平姿势和前后倾斜姿势; 以及至少在搭载有车轮（C）的车辆（C）的电梯（5）的情况下，将后轮支撑装置（7）的车轮支撑板（38）变更为倾斜姿势的姿势切换装置（40）处于关闭状态的前轮支撑装置（6）的臂（29a，29b）和后轮支撑装置（7）的水平姿势的车轮支撑板（38）处于用于传送车辆的最下位置（C）到输送机（1）上。

7. 发明授权

US07939881B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07939881B2
公开(公告)日：2011-05-10
申请号：US12028585
申请日：2008-02-08
申请人： Yasuhiro Takeda
发明人： Yasuhiro Takeda
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/4983 , H01L29/0653 , H01L29/086 , H01L29/0878 , H01L29/41766 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/66689 , H01L29/7809 , H01L29/7813 , H01L29/7816
摘要： A semiconductor device includes a gate electrode formed through a gate insulating film provided on a first impurity region and a drift layer, and this gate electrode consists of two regions including a first conductivity type second impurity region opposed to the first impurity region and a third impurity region capable of forming a depletion layer.
摘要翻译：半导体器件包括通过设置在第一杂质区域和漂移层上的栅极绝缘膜形成的栅电极，该栅电极由包括与第一杂质区域相对的第一导电型第二杂质区域和第三杂质的两个区域组成能够形成耗尽层的区域。

8. 发明申请

US20100193865A1 DMOS TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： DMOS晶体管及其制造方法
公开(公告)号：US20100193865A1
公开(公告)日：2010-08-05
申请号：US12680012
申请日：2008-09-26
申请人： Yasuhiro Takeda , Seiji Otake , Shuichi Kikuchi
发明人： Yasuhiro Takeda , Seiji Otake , Shuichi Kikuchi
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0696 , H01L21/26586 , H01L29/1095 , H01L29/42368 , H01L29/4238 , H01L29/66689 , H01L29/7816
摘要： The invention provides a DMOS transistor in which a leakage current is decreased and the source-drain breakdown voltage of the transistor in the off state is enhanced when a body layer is formed by oblique ion implantation. After a photoresist layer 18 is formed, using the photoresist layer 18 and a gate electrode 14 as a mask, first ion implantation is performed toward a first corner portion 14C1 on the inside of the gate electrode 14 in a first direction shown by an arrow A′. A first body layer 17A′ is formed by this first ion implantation. The first body layer 17A′ is formed so as to extend from the first corner portion 14C1 to under the gate electrode 14, and the P-type impurity concentration of the body layer 17A′ in the first corner portion 14C1 is higher than that of a conventional transistor.
摘要翻译：本发明提供了一种DMOS晶体管，其中当通过倾斜离子注入形成体层时，泄漏电流降低，并且处于断开状态的晶体管的源极 - 漏极击穿电压增强。在形成光致抗蚀剂层18之后，使用光致抗蚀剂层18和栅电极14作为掩模，在栅极电极14的内侧沿箭头A所示的第一方向进行第一离子注入 '。通过该第一离子注入形成第一体层17A'。第一主体层17A'形成为从第一角部14C1延伸到栅极14的下方，第一角部14C1中的主体层17A'的P型杂质浓度高于常规晶体管。

9. 发明授权

US07768067B2 DMOS transistor 有权
标题翻译： DMOS晶体管
公开(公告)号：US07768067B2
公开(公告)日：2010-08-03
申请号：US12425592
申请日：2009-04-17
申请人： Seiji Otake , Shuichi Kikuchi , Yasuhiro Takeda , Kenichi Maki
发明人： Seiji Otake , Shuichi Kikuchi , Yasuhiro Takeda , Kenichi Maki
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/7816 , H01L29/0878 , H01L29/41758 , H01L29/41775 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/665 , H01L29/66689
摘要： This invention provides a DMOS transistor that has a reduced ON resistance and is prevented from deterioration in strength against an electrostatic discharge. An edge portion of a source layer of the DMOS transistor is disposed so as to recede from an inner corner portion of a gate electrode. A silicide layer is structured so as not to extend out of the edge portion of the source layer. That is, although the silicide layer is formed on a surface of the source layer, the silicide layer is not formed on a surface of a portion of a body layer, which is exposed between the source layer and the inner corner portion of the gate electrode. As a result, the strength against the electrostatic discharge can be improved, because an electric current flows almost uniformly through whole of the DMOS transistor without converging.
摘要翻译：本发明提供一种DMOS晶体管，其具有降低的导通电阻并且防止其相对静电放电的强度劣化。 DMOS晶体管的源极层的边缘部分被设置为从栅电极的内角部分退出。硅化物层被构造为不从源极层的边缘部分延伸出来。也就是说，尽管在源极层的表面上形成硅化物层，但是在源极层和栅电极的内角部之间露出的体层的一部分的表面上不形成硅化物层。结果，由于电流几乎均匀地流过整个DMOS晶体管而没有会聚，所以可以提高抵抗静电放电的强度。

10. 发明申请

US20100086243A1 Package Bag And Spout Member 有权
标题翻译：包装袋和喷嘴会员
公开(公告)号：US20100086243A1
公开(公告)日：2010-04-08
申请号：US12630544
申请日：2009-12-03
申请人： Yasuhiro Takeda , Kenji Washida , Takahiro Koyama , Junichi Hashimoto , Matsutarou Ono , Yasuharu Takada , Toshihiko Mori , Moritoshi Oguni
发明人： Yasuhiro Takeda , Kenji Washida , Takahiro Koyama , Junichi Hashimoto , Matsutarou Ono , Yasuharu Takada , Toshihiko Mori , Moritoshi Oguni
IPC分类号： B65D25/40 , B65D33/00
CPC分类号： B65D75/5883 , B65D2575/583
摘要： A spout member including a base portion which is fixed to a bag body, a cylindrical portion which protrudes upward from the base portion, and a sealing portion which seals a front end of the cylindrical portion through a breakable thin portion is disposed between two sheets of film forming the bag body. A sealing chamber accommodating the cylindrical portion and the sealing portion is opened by tearing the two sheets of film along an opening assisting line. An opening assisting plate protruding to at least one of a left side and a right side of the sealing portion is disposed above the opening assisting line. A sandwiching reinforcement seal portion for reinforcing the two sheets of film by sealing inner surfaces thereof is provided between the opening assisting plate and the opening assisting line.
摘要翻译：一种喷嘴构件，其包括固定到袋体的基部，从基部向上突出的圆柱形部分和通过可破裂的薄部分将圆柱形部分的前端密封的密封部分设置在两片胶片成型袋体。容纳圆筒部和密封部的密封室通过沿着打开辅助线撕裂两片胶片而打开。在密封部的左侧和右侧的至少一方突出的开启辅助板设置在开启辅助线的上方。在开启辅助板和开启辅助线之间设置用于通过密封其内表面来加强两片薄膜的夹层加强密封部。

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