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1. 发明授权

US09537044B2 Optoelectric device and method for manufacturing the same 有权
标题翻译：光电器件及其制造方法
公开(公告)号：US09537044B2
公开(公告)日：2017-01-03
申请号：US14438188
申请日：2013-10-23
申请人： ALEDIA , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Philippe Gilet , Xavier Hugon , David Vaufrey , Hubert Bono , Bérangère Hyot
IPC分类号： H01L33/00 , H01L31/18 , B82Y40/00 , H01L33/18 , H01L33/08 , H01L33/24 , B82Y20/00
CPC分类号： H01L33/007 , B82Y20/00 , B82Y40/00 , H01L31/1804 , H01L31/1852 , H01L33/0054 , H01L33/08 , H01L33/18 , H01L33/24
摘要： A method for manufacturing an optoelectric device comprising a semiconductor substrate, pads on a surface of the substrate; semiconductor elements, each element being in contact with a pad; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair, the method successively comprising the forming of the pads and the forming of the region, wherein the region is formed by nitriding of the substrate, the method comprising the successive steps of: depositing a layer on the substrate; forming portions on the layer; etching the parts of the layer which are not covered with the portions to form the pads; removing the portions; and nitriding the pads and the parts of the substrate which are not covered with the pads, wherein the nitriding step successively comprises: a first step of nitriding of the pads at a first temperature; and a second step of nitriding of the parts of the substrate which are not covered with the pads at a second temperature different from the first temperature.
摘要翻译：一种制造光电器件的方法，包括半导体衬底，衬底表面上的焊盘; 半导体元件，每个元件与焊盘接触; 以及从表面延伸到基板中的电介质区域，对于每对焊盘，将该对中的一个焊盘中的一个焊盘连接到该对焊盘中的另一焊盘，该方法依次包括形成焊盘并形成区域其中所述区域是通过对所述衬底进行氮化而形成的，所述方法包括以下步骤：在所述衬底上沉积一层; 在层上形成部分; 蚀刻未被部分覆盖的层的部分以形成焊盘; 去除部分; 并且对所述衬垫和所述衬底的未被衬垫覆盖的部分进行氮化，其中所述氮化步骤依次包括：在第一温度下对所述焊盘进行氮化的第一步骤; 以及在不同于所述第一温度的第二温度下氮化未被所述焊盘覆盖的所述衬底部分的第二步骤。

2. 发明授权

US10636653B2 Process for growing at least one nanowire using a transition metal nitride layer obtained in two steps 有权
公开(公告)号：US10636653B2
公开(公告)日：2020-04-28
申请号：US14438480
申请日：2013-10-25
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ALEDIA
发明人： Bérangère Hyot , Benoit Amstatt , Marie-Françoise Armand , Florian Dupont
IPC分类号： H01L21/02 , C30B25/00 , C30B25/18 , C30B29/16 , C30B29/36 , C30B29/40 , C30B29/60 , H01L21/66 , H01L33/06 , H01L33/00 , B82Y20/00 , H01L33/16 , B82Y40/00
CPC分类号： H01L21/02609 , C30B25/005 , C30B25/183 , C30B29/16 , C30B29/36 , C30B29/403 , C30B29/605 , H01L21/0254 , H01L21/02491 , H01L21/02516 , H01L21/02603 , H01L21/02614 , H01L21/02639 , H01L21/02658 , H01L22/12 , H01L33/007 , H01L33/06 , B82Y20/00 , B82Y40/00 , H01L21/02653 , H01L33/16 , H01L2924/0002 , H01L2924/0002 , H01L2924/00
摘要： The process for growing at least one semiconductor nanowire (3), said growth process comprising a step of forming, on a substrate (1), a nucleation layer (2) for the growth of the nanowire (3) and a step of growth of the nanowire (3). The step of formation of the nucleation layer (2) comprises the following steps: deposition onto the substrate (1) of a layer of a transition metal (4) chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part (2) of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire (3).

3. 发明授权

US09793431B2 Optoelectronic device with improved light extraction efficiency 有权
公开(公告)号：US09793431B2
公开(公告)日：2017-10-17
申请号：US15305745
申请日：2015-04-20
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ALEDIA
发明人： Bérangère Hyot , Florian Dupont
IPC分类号： H01L33/24 , H01L33/00 , H01L33/12 , H01L33/18 , H01L33/10 , H01L33/32 , H01L27/15 , H01L33/08 , H01L33/46
CPC分类号： H01L33/0066 , H01L27/15 , H01L33/005 , H01L33/007 , H01L33/0075 , H01L33/08 , H01L33/10 , H01L33/12 , H01L33/18 , H01L33/24 , H01L33/32 , H01L33/46
摘要： The optoelectronic device (1) comprises a substrate (2), a light-emitting member (3) comprising an elongate element (4) extending in a direction forming an angle with the substrate (2). An intermediate element (5) is interposed between the substrate (2) and a longitudinal end of the elongate element (4) closest to the substrate (2). Furthermore, the substrate (2) is transparent to said light and the intermediate element (5), transparent to said light, comprises at least one nitride of a transition metal, and has a thickness less than or equal to 9 nm.

4. 发明申请

US20170345652A1 ELECTRONIC DEVICE WITH A WIRE ELEMENT EXTENDING FROM AN ELECTROCONDUCTIVE LAYER COMPRISING ZIRCONIUM CARBIDE OR HAFNIUM CARBIDE 审中-公开
公开(公告)号：US20170345652A1
公开(公告)日：2017-11-30
申请号：US15532260
申请日：2015-12-04
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ALEDIA
发明人： Florian Dupont , Benoit Amstatt , Bérangère Hyot
IPC分类号： H01L21/02 , H01L33/06 , H01L33/00 , H01L33/12 , H01L31/0392 , H01L31/0352 , H01L31/0304 , H01L33/32 , H01L31/18
CPC分类号： H01L21/02491 , B82Y10/00 , H01L21/02381 , H01L21/02433 , H01L21/02516 , H01L21/0254 , H01L21/02603 , H01L21/0262 , H01L29/0676 , H01L31/03044 , H01L31/035227 , H01L31/0392 , H01L31/1852 , H01L31/1856 , H01L33/007 , H01L33/06 , H01L33/12 , H01L33/18 , H01L33/32 , Y02E10/544 , Y02P70/521
摘要： The electronic device comprises a substrate (1), at least one semiconductor wire element (2) formed by a nitride of a group III material and an electroconductive layer (3) interposed between the substrate (1) and said at least one semiconductor wire element (2). Said at least one semiconductor wire element (2) extends from said electroconductive layer (3), and the electroconductive layer (3) comprises a carbide of zirconium or a carbide of hafnium.

5. 发明授权

US10340138B2 Electronic device with a wire element extending from an electroconductive layer comprising zirconium carbide or hafnium carbide 有权
公开(公告)号：US10340138B2
公开(公告)日：2019-07-02
申请号：US15532260
申请日：2015-12-04
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ALEDIA
发明人： Florian Dupont , Benoit Amstatt , Bérangère Hyot
IPC分类号： H01L21/02 , B82Y10/00 , H01L31/0352 , H01L31/0304 , H01L31/0392 , H01L31/18 , H01L33/00 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/18 , H01L29/06
摘要： The electronic device comprises a substrate (1), at least one semiconductor wire element (2) formed by a nitride of a group III material and an electroconductive layer (3) interposed between the substrate (1) and said at least one semiconductor wire element (2). Said at least one semiconductor wire element (2) extends from said electroconductive layer (3), and the electroconductive layer (3) comprises a carbide of zirconium or a carbide of hafnium.

6. 发明申请

US20150295041A1 ELECTRONIC DEVICE CONTAINING NANOWIRE(S), EQUIPPED WITH A TRANSITION METAL BUFFER LAYER, PROCESS FOR GROWING AT LEAST ONE NANOWIRE, AND PROCESS FOR MANUFACTURING A DEVICE 有权
标题翻译：包含纳米级（N）的电子设备，具有过渡金属缓冲层，至少一个纳米级生长的工艺以及用于制造器件的工艺
公开(公告)号：US20150295041A1
公开(公告)日：2015-10-15
申请号：US14438497
申请日：2013-10-25
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ALEDIA
发明人： Bérangère Hyot , Benoit Amstatt , Marie-Françoise Armand , Florian Dupont
IPC分类号： H01L29/06 , H01L33/12 , H01L21/02
CPC分类号： H01L29/0676 , B82Y10/00 , B82Y40/00 , B82Y99/00 , C30B25/005 , C30B25/183 , C30B29/16 , C30B29/36 , C30B29/40 , C30B29/406 , C30B29/605 , H01L21/02104 , H01L21/02381 , H01L21/02389 , H01L21/02439 , H01L21/02458 , H01L21/0254 , H01L21/02603 , H01L21/0262 , H01L29/401 , H01L29/413 , H01L29/6609 , H01L33/04 , H01L33/12 , H01L33/16 , H01L33/24 , Y10S977/762 , Y10S977/84 , Y10S977/932
摘要： The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.
摘要翻译：电子器件包括衬底（1），介于衬底（1）和所述纳米线（2）之间的至少一个半导体纳米线（2）和缓冲层（3）。缓冲层（3）至少部分地由纳米线（2）延伸的过渡金属氮化物层（9）形成，所述过渡金属氮化物选自：氮化钒，氮化铬，氮化锆，氮化铌，钼氮化物，氮化铪或氮化钽。

7. 发明申请

US20150280053A1 OPTOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：光电装置及其制造方法
公开(公告)号：US20150280053A1
公开(公告)日：2015-10-01
申请号：US14438188
申请日：2013-10-23
申请人： ALEDIA , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
发明人： Philippe Gilet , Xavier Hugon , David Vaufrey , Hubert Bono , Bérangère Hyot
IPC分类号： H01L33/00 , H01L31/18
CPC分类号： H01L33/007 , B82Y20/00 , B82Y40/00 , H01L31/1804 , H01L31/1852 , H01L33/0054 , H01L33/08 , H01L33/18 , H01L33/24
摘要： A method for manufacturing an optoelectric device comprising a semiconductor substrate, pads on a surface of the substrate; semiconductor elements, each element being in contact with a pad; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair, the method successively comprising the forming of the pads and the forming of the region, wherein the region is formed by nitriding of the substrate, the method comprising the successive steps of: depositing a layer on the substrate; forming portions on the layer; etching the parts of the layer which are not covered with the portions to form the pads; removing the portions; and nitriding the pads and the parts of the substrate which are not covered with the pads, wherein the nitriding step successively comprises: a first step of nitriding of the pads at a first temperature; and a second step of nitriding of the parts of the substrate which are not covered with the pads at a second temperature different from the first temperature.
摘要翻译：一种制造光电器件的方法，包括半导体衬底，衬底表面上的焊盘; 半导体元件，每个元件与焊盘接触; 以及从表面延伸到基板中的电介质区域，对于每对焊盘，将该对中的一个焊盘中的一个焊盘连接到该对焊盘中的另一焊盘，该方法依次包括形成焊盘并形成区域其中所述区域是通过对所述衬底进行氮化而形成的，所述方法包括以下步骤：在所述衬底上沉积一层; 在层上形成部分; 蚀刻未被部分覆盖的层的部分以形成焊盘; 去除部分; 并且对所述衬垫和所述衬底的未被衬垫覆盖的部分进行氮化，其中所述氮化步骤依次包括：在第一温度下对所述焊盘进行氮化的第一步骤; 以及在不同于所述第一温度的第二温度下氮化未被所述焊盘覆盖的所述衬底部分的第二步骤。

8. 发明授权

US09991342B2 Electronic device containing nanowire(s), equipped with a transition metal buffer layer, process for growing at least one nanowire, and process for manufacturing a device 有权
公开(公告)号：US09991342B2
公开(公告)日：2018-06-05
申请号：US14438497
申请日：2013-10-25
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ALEDIA
发明人： Bérangère Hyot , Benoit Amstatt , Marie-Françoise Armand , Florian Dupont
IPC分类号： H01L29/06 , H01L21/02 , H01L33/04 , B82Y10/00 , B82Y40/00 , C30B25/00 , C30B25/18 , C30B29/16 , C30B29/36 , C30B29/40 , C30B29/60 , H01L29/40 , H01L29/66 , H01L29/41 , H01L33/16 , H01L33/12 , B82Y99/00 , H01L33/24
CPC分类号： H01L29/0676 , B82Y10/00 , B82Y40/00 , B82Y99/00 , C30B25/005 , C30B25/183 , C30B29/16 , C30B29/36 , C30B29/40 , C30B29/406 , C30B29/605 , H01L21/02104 , H01L21/02381 , H01L21/02389 , H01L21/02439 , H01L21/02458 , H01L21/0254 , H01L21/02603 , H01L21/0262 , H01L29/401 , H01L29/413 , H01L29/6609 , H01L33/04 , H01L33/12 , H01L33/16 , H01L33/24 , Y10S977/762 , Y10S977/84 , Y10S977/932
摘要： The electronic device comprises a substrate (1), at least one semiconductor nanowire (2) and a buffer layer (3) interposed between the substrate (1) and said nanowire (2). The buffer layer (3) is at least partly formed by a transition metal nitride layer (9) from which extends the nanowire (2), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.

9. 发明申请

US20170047477A1 OPTOELECTRONIC DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY 有权
标题翻译：具有改进的光提取效率的光电装置
公开(公告)号：US20170047477A1
公开(公告)日：2017-02-16
申请号：US15305745
申请日：2015-04-20
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ALEDIA
发明人： Bérangère Hyot , Florian Dupont
IPC分类号： H01L33/00 , H01L33/10 , H01L33/32
CPC分类号： H01L33/0066 , H01L27/15 , H01L33/005 , H01L33/007 , H01L33/0075 , H01L33/08 , H01L33/10 , H01L33/12 , H01L33/18 , H01L33/24 , H01L33/32 , H01L33/46
摘要： The optoelectronic device (1) comprises a substrate (2), a light-emitting member (3) comprising an elongate element (4) extending in a direction forming an angle with the substrate (2). An intermediate element (5) is interposed between the substrate (2) and a longitudinal end of the elongate element (4) closest to the substrate (2). Furthermore, the substrate (2) is transparent to said light and the intermediate element (5), transparent to said light, comprises at least one nitride of a transition metal, and has a thickness less than or equal to 9 nm.
摘要翻译：光电子器件（1）包括衬底（2），发光构件（3），其包括在与衬底（2）形成一定角度的方向上延伸的细长元件（4）。中间元件（5）插入在基板（2）和最靠近基板（2）的细长元件（4）的纵向端之间。此外，基板（2）对所述光是透明的，对于所述光透明的中间元件（5）包括至少一种过渡金属的氮化物，并且具有小于或等于9nm的厚度。

10. 发明申请

US20150279672A1 PROCESS FOR GROWING AT LEAST ONE NANOWIRE USING A TRANSITION METAL NITRIDE LAYER OBTAINED IN TWO STEPS 审中-公开
标题翻译：使用二步法获得的过渡金属硝酸盐层来生长至少一个纳米级的工艺
公开(公告)号：US20150279672A1
公开(公告)日：2015-10-01
申请号：US14438480
申请日：2013-10-25
申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , ALEDIA
发明人： Bérangère Hyot , Benoit Amstatt , Marie-Françoise Armand , Florian Dupont
IPC分类号： H01L21/02 , H01L21/66 , H01L33/00
CPC分类号： H01L21/02609 , B82Y20/00 , B82Y40/00 , C30B25/005 , C30B25/183 , C30B29/16 , C30B29/36 , C30B29/403 , C30B29/605 , H01L21/02491 , H01L21/02516 , H01L21/0254 , H01L21/02603 , H01L21/02614 , H01L21/02639 , H01L21/02653 , H01L21/02658 , H01L22/12 , H01L33/007 , H01L33/06 , H01L33/16 , H01L2924/0002 , H01L2924/00
摘要： The process for growing at least one semiconductor nanowire (3), said growth process comprising a step of forming, on a substrate (1), a nucleation layer (2) for the growth of the nanowire (3) and a step of growth of the nanowire (3). The step of formation of the nucleation layer (2) comprises the following steps: deposition onto the substrate (1) of a layer of a transition metal (4) chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part (2) of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire (3).
摘要翻译：用于生长至少一个半导体纳米线（3）的方法，所述生长方法包括在衬底（1）上形成用于纳米线（3）生长的成核层（2）的步骤，以及生长步骤纳米线（3）。成核层（2）的形成步骤包括以下步骤：将沉积在选自Ti，V，Cr，Zr，Nb，Mo，Hf，Ta的过渡金属层的基板（1）上 ; 至少部分（2）的过渡金属层的氮化，以形成具有用于生长纳米线（3）的表面的过渡金属氮化物层。

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