专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050139934A1 Semiconductor devices and fabrication methods thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20050139934A1
公开(公告)日：2005-06-30
申请号：US10852823
申请日：2004-05-25
申请人： Han-Choon Lee , Jin-Woo Park
发明人： Han-Choon Lee , Jin-Woo Park
IPC分类号： H01L21/335 , H01L21/28 , H01L21/285 , H01L21/321 , H01L21/336 , H01L31/062
CPC分类号： H01L21/28052 , H01L21/28518 , H01L21/321 , H01L29/665
摘要： Semiconductor devices and methods of fabricating semiconductor devices are disclosed. A disclosed semiconductor device includes a silicon substrate, a source region and a drain region. A gate electrode is formed on the silicon substrate. Also, a metal silicide layer is formed on each of the gate electrode, the source region, and the drain region. The metal silicide layer has a thickness uniformity of about 1˜20%. A disclosed fabrication method includes forming a metal layer on a silicon substrate having a gate electrode, a source region, and a drain region; performing a plasma treatment on the metal layer; forming a protective layer on the metal layer; and heat treating the silicon substrate on which the protective layer is formed to thereby form a metal silicide layer. A gas that includes nitrogen is used as a plasma gas during the plasma treatment.
摘要翻译：公开了制造半导体器件的半导体器件和方法。所公开的半导体器件包括硅衬底，源极区和漏极区。在硅衬底上形成栅电极。而且，在栅极电极，源极区域和漏极区域中的每一个上形成金属硅化物层。金属硅化物层的厚度均匀度为约1〜20％。所公开的制造方法包括在具有栅电极，源极区和漏极区的硅衬底上形成金属层; 对金属层进行等离子体处理; 在金属层上形成保护层; 对其上形成保护层的硅衬底进行热处理从而形成金属硅化物层。在等离子体处理期间，使用包含氮气的气体作为等离子体气体。

2. 发明申请

US20090184377A1 Semiconductor devices and fabrication methods thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090184377A1
公开(公告)日：2009-07-23
申请号：US11982582
申请日：2007-11-01
申请人： Han-Choon Lee , Jin-Woo Park
发明人： Han-Choon Lee , Jin-Woo Park
IPC分类号： H01L29/78
CPC分类号： H01L21/28052 , H01L21/28518 , H01L21/321 , H01L29/665
摘要： Semiconductor devices and methods of fabricating semiconductor devices are disclosed. A disclosed semiconductor device includes a silicon substrate, a source region and a drain region. A gate electrode is formed on the silicon substrate. Also, a metal silicide layer is formed on each of the gate electrode, the source region, and the drain region. The metal silicide layer has a thickness uniformity of about 1˜20%. A disclosed fabrication method includes forming a metal layer on a silicon substrate having a gate electrode, a source region, and a drain region; performing a plasma treatment on the metal layer; forming a protective layer on the metal layer; and heat treating the silicon substrate on which the protective layer is formed to thereby form a metal silicide layer. A gas that includes nitrogen is used as a plasma gas during the plasma treatment.
摘要翻译：公开了制造半导体器件的半导体器件和方法。所公开的半导体器件包括硅衬底，源极区和漏极区。在硅衬底上形成栅电极。而且，在栅极电极，源极区域和漏极区域中的每一个上形成金属硅化物层。金属硅化物层的厚度均匀度为约1〜20％。所公开的制造方法包括在具有栅电极，源极区和漏极区的硅衬底上形成金属层; 对金属层进行等离子体处理; 在金属层上形成保护层; 对其上形成保护层的硅衬底进行热处理从而形成金属硅化物层。在等离子体处理期间，使用包含氮气的气体作为等离子体气体。

3. 发明申请

US20050142845A1 Method of forming plug of semiconductor device 失效
标题翻译：形成半导体器件插头的方法
公开(公告)号：US20050142845A1
公开(公告)日：2005-06-30
申请号：US11027408
申请日：2004-12-30
申请人： Han-Choon Lee , Jin-Woo Park
发明人： Han-Choon Lee , Jin-Woo Park
IPC分类号： H01L21/283 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/76838
摘要： A method for forming a plug of a semiconductor device according to a preferred embodiment includes forming a metal wiring on a semiconductor substrate, forming an interlayer dielectric layer on the semiconductor substrate having the metal wiring, forming a contact hole for partially exposing the metal wiring by selectively etching the interlayer dielectric layer, annealing the semiconductor substrate having the contact hole using NH3 gas, plasma processing the annealed semiconductor substrate using the NH3, and forming a barrier layer on the interlayer dielectric layer having the contact hole.
摘要翻译：根据优选实施例的形成半导体器件的插头的方法包括在半导体衬底上形成金属布线，在具有金属布线的半导体衬底上形成层间电介质层，形成用于部分地暴露金属布线的接触孔选择性地蚀刻层间电介质层，使用NH 3气体退火具有接触孔的半导体衬底，使用NH 3等离子体处理退火的半导体衬底，以及形成阻挡层在具有接触孔的层间绝缘层上。

4. 发明授权

US07811928B2 Semiconductor devices and fabrication methods thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US07811928B2
公开(公告)日：2010-10-12
申请号：US11982582
申请日：2007-11-01
申请人： Han-Choon Lee , Jin-Woo Park
发明人： Han-Choon Lee , Jin-Woo Park
IPC分类号： H01L21/4763
CPC分类号： H01L21/28052 , H01L21/28518 , H01L21/321 , H01L29/665
摘要： Semiconductor devices and methods of fabricating semiconductor devices are disclosed. A disclosed semiconductor device includes a silicon substrate, a source region and a drain region. A gate electrode is formed on the silicon substrate. Also, a metal silicide layer is formed on each of the gate electrode, the source region, and the drain region. The metal silicide layer has a thickness uniformity of about 1˜20%. A disclosed fabrication method includes forming a metal layer on a silicon substrate having a gate electrode, a source region, and a drain region; performing a plasma treatment on the metal layer; forming a protective layer on the metal layer; and heat treating the silicon substrate on which the protective layer is formed to thereby form a metal silicide layer. A gas that includes nitrogen is used as a plasma gas during the plasma treatment.
摘要翻译：公开了制造半导体器件的半导体器件和方法。所公开的半导体器件包括硅衬底，源极区和漏极区。在硅衬底上形成栅电极。而且，在栅极电极，源极区域和漏极区域中的每一个上形成金属硅化物层。金属硅化物层的厚度均匀度为约1〜20％。所公开的制造方法包括在具有栅电极，源极区和漏极区的硅衬底上形成金属层; 对金属层进行等离子体处理; 在金属层上形成保护层; 对其上形成保护层的硅衬底进行热处理从而形成金属硅化物层。在等离子体处理期间，使用包含氮气的气体作为等离子体气体。

5. 发明授权

US07442639B2 Method of forming plug of semiconductor device 失效
标题翻译：形成半导体器件插头的方法
公开(公告)号：US07442639B2
公开(公告)日：2008-10-28
申请号：US11027408
申请日：2004-12-30
申请人： Han-Choon Lee , Jin-Woo Park
发明人： Han-Choon Lee , Jin-Woo Park
IPC分类号： H01L21/4763
CPC分类号： H01L21/76838
摘要： A method for forming a plug of a semiconductor device according to a preferred embodiment includes forming a metal wiring on a semiconductor substrate, forming an interlayer dielectric layer on the semiconductor substrate having the metal wiring, forming a contact hole for partially exposing the metal wiring by selectively etching the interlayer dielectric layer, annealing the semiconductor substrate having the contact hole using NH3 gas, plasma processing the annealed semiconductor substrate using the NH3, and forming a barrier layer on the interlayer dielectric layer having the contact hole.
摘要翻译：根据优选实施例的形成半导体器件的插头的方法包括在半导体衬底上形成金属布线，在具有金属布线的半导体衬底上形成层间电介质层，形成用于部分地暴露金属布线的接触孔选择性地蚀刻层间电介质层，使用NH 3气体退火具有接触孔的半导体衬底，使用NH 3等离子体处理退火的半导体衬底，以及形成阻挡层在具有接触孔的层间绝缘层上。

6. 发明授权

US07307017B2 Semiconductor devices and fabrication methods thereof 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US07307017B2
公开(公告)日：2007-12-11
申请号：US10852823
申请日：2004-05-25
申请人： Han-Choon Lee , Jin-Woo Park
发明人： Han-Choon Lee , Jin-Woo Park
IPC分类号： H01L21/4763
CPC分类号： H01L21/28052 , H01L21/28518 , H01L21/321 , H01L29/665
摘要： Semiconductor devices and methods of fabricating semiconductor devices are disclosed. A disclosed semiconductor device includes a silicon substrate, a source region and a drain region. A gate electrode is formed on the silicon substrate. Also, a metal silicide layer is formed on each of the gate electrode, the source region, and the drain region. The metal silicide layer has a thickness uniformity of about 1˜20%. A disclosed fabrication method includes forming a metal layer on a silicon substrate having a gate electrode, a source region, and a drain region; performing a plasma treatment on the metal layer; forming a protective layer on the metal layer; and heat treating the silicon substrate on which the protective layer is formed to thereby form a metal silicide layer. A gas that includes nitrogen is used as a plasma gas during the plasma treatment.
摘要翻译：公开了制造半导体器件的半导体器件和方法。所公开的半导体器件包括硅衬底，源极区和漏极区。在硅衬底上形成栅电极。而且，在栅极电极，源极区域和漏极区域中的每一个上形成金属硅化物层。金属硅化物层的厚度均匀度为约1〜20％。所公开的制造方法包括在具有栅电极，源极区和漏极区的硅衬底上形成金属层; 对金属层进行等离子体处理; 在金属层上形成保护层; 对其上形成保护层的硅衬底进行热处理从而形成金属硅化物层。在等离子体处理期间，使用包含氮气的气体作为等离子体气体。

7. 发明授权

US09452932B2 Hydrogen production module by integrated reaction/separation process, and hydrogen production reactor using same 有权
标题翻译：氢气生产模块通过综合反应/分离过程，氢气生产反应器采用相同方式
公开(公告)号：US09452932B2
公开(公告)日：2016-09-27
申请号：US14354854
申请日：2012-08-08
申请人： Jong-Soo Park , Kyung-Ran Hwang , Shin-Kun Ryi , Chun-Boo Lee , Sung-Wook Lee , Jin-Woo Park
发明人： Jong-Soo Park , Kyung-Ran Hwang , Shin-Kun Ryi , Chun-Boo Lee , Sung-Wook Lee , Jin-Woo Park
IPC分类号： B01J7/00 , C01B3/38 , B01J19/00 , B01J19/24
CPC分类号： C01B3/38 , B01J19/0093 , B01J19/249 , B01J2219/00783 , B01J2219/00835 , B01J2219/00844 , B01J2219/00873 , B01J2219/00907 , B01J2219/2453 , B01J2219/2458 , B01J2219/2461 , B01J2219/2475 , B01J2219/2479 , C01B2203/0283 , C01B2203/041 , C01B2203/1058 , C01B2203/1241 , C01B2203/142
摘要： The present invention relates to a hydrogen production module by an integrated reaction/separation process, and a hydrogen production reactor using the same, and more specifically, provides a hydrogen production apparatus which laminates a plurality of layered unit cells, is mounted in a pressure-resistant chamber, and can be operated at a high pressure, wherein the unit cell comprises a first modified catalyst, and a second modified catalyst opposite to a hydrogen separator. The hydrogen production module can produce hydrogen using a hydrocarbon, carbon monoxide and an alcohol as sources. Particularly, all the modified catalysts are formed into a porous metal plate form, thereby maximizing the heat transfer effect necessary for reaction. While a reaction and separation of hydrogen simultaneously occur, separated reactants permeate the first modified catalyst so as to come in contact with the same, and then pass through the gap between the hydrogen separator and the second modified catalyst opposite to each other. Therefore, it is possible to obtain a high efficiency over the equilibrium conversion rate of reaction temperature, and high purity hydrogen can be obtained.
摘要翻译：本发明涉及通过一体化反应/分离方法的氢气生产模块和使用该制氢反应器的氢气生产反应器，更具体地说，提供一种将多个分层单元电池层叠的氢制造装置，并且可以在高压下操作，其中单元电池包括第一改性催化剂和与氢分离器相对的第二改性催化剂。氢气生产模块可以使用烃，一氧化碳和酒精作为源产生氢。特别地，所有的改性催化剂形成多孔金属板形式，从而最大化反应所需的传热效果。同时发生氢的反应和分离，分离的反应物渗入第一改性催化剂以与其接触，然后通过氢分离器和第二改性催化剂彼此相对的间隙。因此，可以获得比反应温度的平衡转化率高的效率，并且可以获得高纯度的氢。

8. 发明授权

US09427700B2 Multilayer module for hydrogen separation 有权
标题翻译：用于氢气分离的多层模块
公开(公告)号：US09427700B2
公开(公告)日：2016-08-30
申请号：US14354346
申请日：2012-08-08
申请人： Jong-Soo Park , Kyung-Ran Hwang , Shin-Kun Ryi , Chun-Boo Lee , Sung-Wook Lee , Jin-Woo Park
发明人： Jong-Soo Park , Kyung-Ran Hwang , Shin-Kun Ryi , Chun-Boo Lee , Sung-Wook Lee , Jin-Woo Park
IPC分类号： B01D53/22 , B01D63/08 , C01B3/50
CPC分类号： B01D53/228 , B01D53/22 , B01D53/227 , B01D63/082 , B01D2313/10 , B01D2319/04 , C01B3/503
摘要： The present invention relates to a multilayer module for hydrogen separation using a pressure-resistant chamber so that unit cells using a metal separation membrane through which only hydrogen selectively passes are stacked to improve separation efficiency, and a mixed gas is uniformly supplied into each of the unit cells. In the multilayer module, the unit cells are stacked on each other, and the mixed gas is supplied into the chamber. Also, mixed gas input ports are each disposed in the side surfaces of the unit cells to supply the mixed gas.
摘要翻译：本发明涉及使用耐压室进行氢分离的多层组件，使得使用仅选择通过氢气的金属分离膜的单电池堆叠以提高分离效率，并且将混合气体均匀地供应到单元格单元格在多层模块中，单元电池彼此堆叠，并且将混合气体供应到室中。此外，混合气体输入端口分别设置在单元电池的侧表面以供应混合气体。

9. 发明授权

US09343437B2 Semiconductor package devices 有权
标题翻译：半导体封装器件
公开(公告)号：US09343437B2
公开(公告)日：2016-05-17
申请号：US14680094
申请日：2015-04-07
申请人： Ae-nee Jang , Jin-Woo Park , Seokhyun Lee , Jongho Lee
发明人： Ae-nee Jang , Jin-Woo Park , Seokhyun Lee , Jongho Lee
IPC分类号： H01L23/10 , H01L25/065 , H01L23/373 , H01L23/367 , H01L23/528 , H01L23/31
CPC分类号： H01L25/0657 , H01L23/3107 , H01L23/3128 , H01L23/36 , H01L23/3675 , H01L23/3735 , H01L23/3736 , H01L23/42 , H01L23/49816 , H01L23/528 , H01L25/105 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06575 , H01L2225/06589 , H01L2225/1023 , H01L2225/1058 , H01L2225/1076 , H01L2225/1094 , H01L2924/15311 , H01L2924/181 , H01L2924/1815 , H01L2924/18161 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： Semiconductor package devices and methods of forming the semiconductor package devices are provided. The semiconductor package devices may include a lower package including a lower semiconductor chip on a lower substrate, an upper package including an upper semiconductor chip on an upper substrate. The upper substrate may include a protruding part corresponding to the lower semiconductor chip and a connection part that has a bottom surface lower than a bottom surface of the protruding part and is disposed around the protruding part. The semiconductor package devices may also include a heat dissipation part in a space between the lower semiconductor chip and the protruding part on the upper substrate and a package connection pattern electrically connecting the lower package to the upper package.
摘要翻译：提供半导体封装器件和形成半导体封装器件的方法。半导体封装器件可以包括下封装，其包括在下基板上的下半导体芯片，在上基板上包括上半导体芯片的上封装。上基板可以包括对应于下半导体芯片的突出部分和具有低于突出部分的底表面的底表面并且布置在突出部分周围的连接部分。半导体封装器件还可以包括在下半导体芯片和上基板上的突出部分之间的空间中的散热部分和将下封装电连接到上封装的封装连接图案。

10. 发明申请

US20140298994A1 MULTILAYER MODULE FOR HYDROGEN SEPARATION 有权
标题翻译：氢分离多层模块
公开(公告)号：US20140298994A1
公开(公告)日：2014-10-09
申请号：US14354346
申请日：2012-08-08
申请人： Jong-Soo Park , Kyung-Ran Hwang , Shin-Kun Ryi , Chun-Boo Lee , Sung-Wook Lee , Jin-Woo Park
发明人： Jong-Soo Park , Kyung-Ran Hwang , Shin-Kun Ryi , Chun-Boo Lee , Sung-Wook Lee , Jin-Woo Park
IPC分类号： B01D53/22
CPC分类号： B01D53/228 , B01D53/22 , B01D53/227 , B01D63/082 , B01D2313/10 , B01D2319/04 , C01B3/503
摘要： The present invention relates to a multilayer module for hydrogen separation using a pressure-resistant chamber so that unit cells using a metal separation membrane through which only hydrogen selectively passes are stacked to improve separation efficiency, and a mixed gas is uniformly supplied into each of the unit cells. In the multilayer module, the unit cells are stacked on each other, and the mixed gas is supplied into the chamber. Also, mixed gas input ports are each disposed in the side surfaces of the unit cells to supply the mixed gas.
摘要翻译：本发明涉及使用耐压室进行氢分离的多层组件，使得使用仅选择通过氢气的金属分离膜的单电池堆叠以提高分离效率，并且将混合气体均匀地供应到单元格单元格在多层模块中，单元电池彼此堆叠，并且将混合气体供应到室中。此外，混合气体输入端口分别设置在单元电池的侧表面以供应混合气体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式