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    • 1. 发明授权
    • Programmable soft macro memory using gate array base cells
    • 使用门阵列基本单元的可编程软宏存储器
    • US07305640B1
    • 2007-12-04
    • US10987986
    • 2004-11-12
    • Hee Kong PhoonBoon Jin AngWei Yee KoayBee Yee Ng
    • Hee Kong PhoonBoon Jin AngWei Yee KoayBee Yee Ng
    • G06F17/50
    • G06F17/5068
    • A system generates memory unit designs tailored to requirements. The system receives a set of specifications for one or more memory units. The set of specifications includes the memory type, the number of memory access ports, and the data width. The system assembles a memory unit schematic from a library of schematic modules defining memory unit components, including memory cells, address decoders, registers, drivers, sense amplifiers, and optionally self-testing components. The system creates a layout for the memory unit from a library of layout modules corresponding to the library of schematic modules. The library of layout modules includes memory unit floorplans specifying the location of layout modules within a memory unit. The system selects from different memory unit floorplans to create an optimized memory unit layout. The memory unit schematic can be validated using functional testing methods. The system processes the memory unit layout to produce a device configuration.
    • 系统生成适合要求的内存单元设计。 系统接收一组或多个存储单元的规格。 该组规范包括内存类型,内存访问端口数量和数据宽度。 该系统从定义存储器单元组件的原理图模块库中组装存储器单元原理图,包括存储器单元,地址解码器,寄存器,驱动器,读出放大器以及可选择的自检部件。 系统从与原理图模块库相对应的布局模块库创建存储单元的布局。 布局模块库包括指定布局模块在存储器单元内的位置的存储单元平面图。 系统从不同的存储单元平面图中选择以创建优化的存储器单元布局。 存储单元原理图可以使用功能测试方法进行验证。 系统处理存储器单元布局以产生器件配置。
    • 2. 发明授权
    • Configurable memory block
    • 可配置的内存块
    • US08400863B1
    • 2013-03-19
    • US12860734
    • 2010-08-20
    • Zun Yang TanWei Yee KoayBoon Jin AngTat Mun LuiEu Geen Chew
    • Zun Yang TanWei Yee KoayBoon Jin AngTat Mun LuiEu Geen Chew
    • G11C8/00
    • G11C8/12
    • Circuits for a memory array and a method of operating a configurable memory block are disclosed. An embodiment of the disclosed memory circuits includes a first memory block coupled to a second memory block to form an array of memory blocks. Each of the memory blocks has multiple bit lines with a dedicated address decoder coupled to the bit lines from each of the memory blocks. Switches are placed in between the first and second memory blocks such that each of the bit lines from the first memory block is connected to a corresponding bitline from the second memory block through one of the switches. The switches may be used to either connect the second memory block to the first memory block or disconnect the second memory block from the first memory block.
    • 公开了用于存储器阵列的电路和操作可配置存储器块的方法。 所公开的存储器电路的实施例包括耦合到第二存储器块以形成存储器块阵列的第一存储器块。 每个存储器块具有多个位线,其中专用地址解码器耦合到来自每个存储器块的位线。 开关被放置在第一和第二存储器块之间,使得来自第一存储器块的每个位线通过其中一个开关连接到来自第二存储器块的相应位线。 交换机可以用于将第二存储器块连接到第一存储器块或将第二存储器块与第一存储器块断开。
    • 5. 发明授权
    • Memory circuitry with dynamic power control
    • 具有动态功率控制的存储器电路
    • US08699291B1
    • 2014-04-15
    • US13415052
    • 2012-03-08
    • Chin Ghee Ch'ngWei Yee KoayBoon Jin Ang
    • Chin Ghee Ch'ngWei Yee KoayBoon Jin Ang
    • G11C5/14
    • G11C5/147G11C5/148
    • Circuits and techniques for operating a memory circuit are disclosed. A disclosed circuit includes a memory circuit and a sleep circuit with an output terminal coupled to the memory circuit. The sleep circuit is operable to receive a control signal and further operable to place the memory circuit in different modes of operation. The memory circuit may be placed in either a first mode of operation, a second mode of operation or a third mode of operation based at least partly on the control signal. An input terminal of the sleep circuit is coupled to an output terminal of the control circuit. The control circuit is operable to receive an enable signal and is operable to supply the control signal to the sleep circuit at first, second and third voltage levels during the first, second and third modes of operation, respectively, based on the enable signal and a clock signal.
    • 公开了用于操作存储器电路的电路和技术。 所公开的电路包括存储器电路和具有耦合到存储器电路的输出端的睡眠电路。 睡眠电路可操作以接收控制信号并进一步可操作以将存储器电路放置在不同的操作模式中。 存储器电路可以至少部分地基于控制信号放置在第一操作模式,第二操作模式或第三操作模式中。 休眠电路的输入端子耦合到控制电路的输出端子。 控制电路可操作以接收使能信号,并且可操作以分别基于使能信号和第一,第二和第三电压电平在第一,第二和第三工作模式下将控制信号提供给第一,第二和第三电压电平, 时钟信号。
    • 7. 发明授权
    • Techniques for implementing hardwired decoders in differential input circuits
    • 在差分输入电路中实现硬连线解码器的技术
    • US07218141B2
    • 2007-05-15
    • US11007827
    • 2004-12-07
    • Bee Yee NgBoon Jin Ang
    • Bee Yee NgBoon Jin Ang
    • G06F7/38H03K19/173H03K19/177H01L25/00
    • H03K19/17744
    • Techniques are provided for improving signal timing characteristics of differential input/output (IO) circuits on programmable logic integrated circuits. A differential buffer receives differential signals applied to differential input pins. The output signals of the differential buffer are routed to two hard IO decoder blocks that are located in two adjacent rows/columns of programmable logic elements. Each IO decoder block has a data-in register that receives output signals of the differential buffer. The data-in registers in two adjacent IO decoder blocks support a double clocking technique. IO decoder blocks of the present invention have reduced setup times, hold times, and sampling windows relative to soft DDIO blocks, and have a minimal impact on die area.
    • 提供了用于改善可编程逻辑集成电路上的差分输入/输出(IO)电路的信号定时特性的技术。 差分缓冲器接收施加到差分输入引脚的差分信号。 差分缓冲器的输出信号被路由到位于可编程逻辑元件的两个相邻行/列中的两个硬IO解码器块。 每个IO解码器块具有接收差分缓冲器的输出信号的数据输入寄存器。 两个相邻IO解码器块中的数据输入寄存器支持双时钟技术。 本发明的IO解码器块相对于软DDIO块具有减少的建立时间,保持时间和采样窗口,并且对芯片面积的影响最小。
    • 10. 发明授权
    • Techniques for reducing clock skew in clock routing networks
    • 降低时钟路由网络时钟偏移的技术
    • US07639047B1
    • 2009-12-29
    • US12053573
    • 2008-03-22
    • Boon Jin AngBee Yee NgEng Huat LeeThow Pang ChongTeng Kuan Koay
    • Boon Jin AngBee Yee NgEng Huat LeeThow Pang ChongTeng Kuan Koay
    • H03K19/00
    • G06F1/10
    • A circuit includes a clock routing network. The clock routing network includes first and second clock paths. The first clock path routes a first clock signal to sub-circuits in the circuit. The first clock path has first buffers that buffer the first clock signal at the sub-circuits and first conductors in a first conductive layer of the circuit that transmit the first clock signal. The second clock path routes a second clock signal to the sub-circuits. The second clock path has second buffers that buffer the second clock signal at the sub-circuits, second conductors in the first conductive layer that transmit the second clock signal, and third conductors in a second conductive layer of the circuit. The second clock signal is routed through the third conductors at overlaps between the first clock path and the second clock path.
    • 电路包括时钟路由网络。 时钟路由网络包括第一和第二时钟路径。 第一时钟路径将第一时钟信号路由到电路中的子电路。 第一时钟路径具有缓冲第一时钟信号在子电路处的第一缓冲器和传输第一时钟信号的电路的第一导电层中的第一导体。 第二时钟路径将第二时钟信号路由到子电路。 第二时钟路径具有缓冲子电路上的第二时钟信号的第二缓冲器,传输第二时钟信号的第一导电层中的第二导体和在该电路的第二导电层中的第三导体。 第二时钟信号在第一时钟路径和第二时钟路径之间的重叠处被路由穿过第三导体。