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1. 发明申请

US20090121208A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20090121208A1
公开(公告)日：2009-05-14
申请号：US12271434
申请日：2008-11-14
申请人： Hiroyuki Nagashima , Koichi Kubo , Hirofumi Inoue
发明人： Hiroyuki Nagashima , Koichi Kubo , Hirofumi Inoue
IPC分类号： H01L47/00 , H01L21/00 , H01L21/4763
CPC分类号： H01L27/2463 , H01L27/101 , H01L27/112 , H01L27/2436 , H01L27/2481 , H01L45/085 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： A nonvolatile semiconductor memory device comprises a plurality of first lines; a plurality of second lines crossing the plurality of first lines; a plurality of memory cells each connected at an intersection of the first and second lines between both lines and including a variable resistor operative to store information in accordance with a variation in resistance; and a protection film covering the side of the variable resistor to suppress migration of cations at the side of the variable resistor.
摘要翻译：非易失性半导体存储器件包括多条第一线; 多条第二线穿过多条第一线; 多个存储单元，每个存储单元分别连接在两条线之间的第一和第二线的交点处，并且包括可变电阻，用于根据电阻的变化存储信息; 以及覆盖可变电阻器一侧的保护膜，以抑制可变电阻器一侧的阳离子迁移。

2. 发明授权

US08575589B2 Nonvolatile semiconductor memory device and method of manufacturing the same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08575589B2
公开(公告)日：2013-11-05
申请号：US12271434
申请日：2008-11-14
申请人： Hiroyuki Nagashima , Koichi Kubo , Hirofumi Inoue
发明人： Hiroyuki Nagashima , Koichi Kubo , Hirofumi Inoue
IPC分类号： H01L29/06
CPC分类号： H01L27/2463 , H01L27/101 , H01L27/112 , H01L27/2436 , H01L27/2481 , H01L45/085 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： A nonvolatile semiconductor memory device includes a plurality of first lines; a plurality of second lines crossing the plurality of first lines; a plurality of memory cells each connected at an intersection of the first and second lines between both lines and including a variable resistor operative to store information in accordance with a variation in resistance; and a protection film covering the side of the variable resistor to suppress migration of cations at the side of the variable resistor.
摘要翻译：非易失性半导体存储器件包括多条第一线; 多条第二线穿过多条第一线; 多个存储单元，每个存储单元分别连接在两条线之间的第一和第二线的交点处，并且包括可变电阻，用于根据电阻的变化存储信息; 以及覆盖可变电阻器一侧的保护膜，以抑制可变电阻器一侧的阳离子迁移。

3. 发明申请

US20100226164A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20100226164A1
公开(公告)日：2010-09-09
申请号：US12680582
申请日：2008-10-17
申请人： Hiroyuki Nagashima , Koichi Kubo , Yasuyuki Fukuda
发明人： Hiroyuki Nagashima , Koichi Kubo , Yasuyuki Fukuda
IPC分类号： G11C11/00 , G11C7/00
CPC分类号： G11C13/0007 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0064 , G11C13/0069 , G11C13/0097 , G11C16/3413 , G11C16/3463 , G11C2013/0073 , G11C2013/0092 , G11C2213/11 , G11C2213/31 , G11C2213/34 , G11C2213/56 , G11C2213/71 , G11C2213/72
摘要： A nonvolatile semiconductor memory device comprises a memory cell array of electrically erasable programmable nonvolatile memory cells arranged in matrix, each memory cell using a variable resistor. A pulse generator generates plural types of write pulses for varying the resistance of the variable resistor based on write data. A selection circuit applies write pulses generated by the pulse generator to the memory cell. A sense amplifier executes verify read to the memory cell. A status decision circuit decides the verify result based on the output from the sense amplifier. A control circuit executes additional write to the memory cell based on the verify result from the status decision circuit.
摘要翻译：非易失性半导体存储器件包括以矩阵形式布置的电可擦除可编程非易失性存储单元的存储单元阵列，每个存储单元使用可变电阻器。脉冲发生器产生用于根据写入数据改变可变电阻器的电阻的多种类型的写入脉冲。选择电路将由脉冲发生器产生的写脉冲施加到存储单元。读出放大器对存储单元执行验证读取。状态判定电路根据读出放大器的输出决定验证结果。控制电路基于来自状态判定电路的验证结果对存储器单元执行附加写入。

4. 发明授权

US08300444B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08300444B2
公开(公告)日：2012-10-30
申请号：US12680582
申请日：2008-10-17
申请人： Hiroyuki Nagashima , Koichi Kubo , Yasuyuki Fukuda
发明人： Hiroyuki Nagashima , Koichi Kubo , Yasuyuki Fukuda
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C11/5678 , G11C11/5685 , G11C13/0004 , G11C13/0064 , G11C13/0069 , G11C13/0097 , G11C16/3413 , G11C16/3463 , G11C2013/0073 , G11C2013/0092 , G11C2213/11 , G11C2213/31 , G11C2213/34 , G11C2213/56 , G11C2213/71 , G11C2213/72
摘要： A nonvolatile semiconductor memory device comprises a memory cell array of electrically erasable programmable nonvolatile memory cells arranged in matrix, each memory cell using a variable resistor. A pulse generator generates plural types of write pulses for varying the resistance of the variable resistor based on write data. A selection circuit applies write pulses generated by the pulse generator to the memory cell. A sense amplifier executes verify read to the memory cell. A status decision circuit decides the verify result based on the output from the sense amplifier. A control circuit executes additional write to the memory cell based on the verify result from the status decision circuit.
摘要翻译：非易失性半导体存储器件包括以矩阵形式布置的电可擦除可编程非易失性存储单元的存储单元阵列，每个存储单元使用可变电阻器。脉冲发生器产生用于根据写入数据改变可变电阻器的电阻的多种类型的写入脉冲。选择电路将由脉冲发生器产生的写脉冲施加到存储单元。读出放大器对存储单元执行验证读取。状态判定电路根据读出放大器的输出决定验证结果。控制电路基于来自状态判定电路的验证结果对存储器单元执行附加写入。

5. 发明授权

US08120942B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US08120942B2
公开(公告)日：2012-02-21
申请号：US12559931
申请日：2009-09-15
申请人： Takeshi Yamaguchi , Mariko Hayashi , Hirofumi Inoue , Takeshi Araki , Koichi Kubo
发明人： Takeshi Yamaguchi , Mariko Hayashi , Hirofumi Inoue , Takeshi Araki , Koichi Kubo
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/32 , G11C2213/33 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/1021
摘要： A memory array includes a memory cell, the memory cell being disposed between a first line and a second line and being configured by a variable resistor and a rectifier connected in series. The variable resistor is a mixture of silicon oxide (SiO2) and a transition metal oxide, a proportion of the transition metal oxide being set to 55˜80%.
摘要翻译：存储器阵列包括存储器单元，存储单元设置在第一线路和第二线路之间，并且由可变电阻器和串联连接的整流器构成。可变电阻器是氧化硅（SiO 2）和过渡金属氧化物的混合物，过渡金属氧化物的比例设定为55〜80％。

6. 发明授权

US08529037B2 Ink tank and production process of ink tank 有权
标题翻译：墨水罐和墨水罐的生产过程
公开(公告)号：US08529037B2
公开(公告)日：2013-09-10
申请号：US13333761
申请日：2011-12-21
申请人： Takeho Miyashita , Yasuo Kotaki , Hitoshi Takada , Koichi Kubo , Hiroki Hayashi
发明人： Takeho Miyashita , Yasuo Kotaki , Hitoshi Takada , Koichi Kubo , Hiroki Hayashi
IPC分类号： B41J2/175
CPC分类号： B41J2/17553
摘要： An ink tank for being installed in an ink jet recording apparatus to supply ink thereto, including an ink storage portion, one side surface of a casing of the ink tank in which side surface an opening for supplying ink to the apparatus is formed, and a joint member for joining the one side surface to the apparatus by engaging with a connection member of the apparatus. The joint member has a welding portion for being welded to the one side surface along a peripheral portion of the opening, the welding portion corresponding to the peripheral portion; and a hollow portion forming a positioning hole for inserting therein and engaging therewith the connection member for determining a relative position of the apparatus and the one side surface. The hollow portion is provided on the outside of the welding portion and abuts to the one side surface without being welded.
摘要翻译：一种用于安装在用于向其供应墨水的喷墨记录装置中的墨水罐，包括墨水储存部分，墨水盒的壳体的一个侧表面，其中形成用于向装置供墨的开口的侧表面，以及联接构件，用于通过与装置的连接构件接合来将一个侧表面连接到装置。接头构件具有焊接部，其沿着开口的周边部焊接在一个侧面，焊接部对应于周边部; 以及形成用于插入其中并与其接合的定位孔的中空部分，用于确定装置和一个侧面的相对位置。中空部设置在焊接部的外侧，并且不会被焊接而与一个侧面抵接。

7. 发明申请

US20120103026A1 WASHING MACHINE 审中-公开
标题翻译：洗衣机
公开(公告)号：US20120103026A1
公开(公告)日：2012-05-03
申请号：US13383027
申请日：2010-07-12
申请人： Makoto Oyama , Toshihiko Yasui , Koichi Kubo
发明人： Makoto Oyama , Toshihiko Yasui , Koichi Kubo
IPC分类号： D06F33/00 , D06F39/08 , D06F21/00
CPC分类号： D06F39/083 , D06F33/02 , D06F39/004 , D06F39/085 , D06F2202/02 , D06F2202/10 , D06F2204/082
摘要： A washing machine includes a cabinet, an outer tank, an inner tank, a circulation tube, and a circulation pump. The outer tank is held in the cabinet. The inner tank is rotatably mounted in the outer tank so as to accommodate and stir laundry. The circulation tube draws washing water kept in the outer tank and returns it to the outer tank. The circulation pump is located at some midpoint in the circulation tube so as to circulate the washing water. The washing machine further includes, at some midpoint in the circulation tube, a washing water-condition detector for detecting the condition of the washing water. This structure ensures the amount of washing water circulating through the washing water-condition detector, without depending on the operation of the inner tank. Thus, the washing machine can detect the degree of contamination of washing water with high accuracy while maintaining its washing efficiency.
摘要翻译：洗衣机包括机壳，外箱，内箱，循环管和循环泵。外箱保持在柜体内。内罐可旋转地安装在外罐中，以容纳和搅拌衣物。循环管抽取保持在外罐中的洗涤水并将其返回到外罐。循环泵位于循环管的一些中点，以便循环洗涤水。洗衣机在循环管的一些中点还包括用于检测洗涤水的状况的洗涤水条件检测器。这种结构确保洗涤水循环通过洗涤水条件检测器的量，而不依赖于内罐的操作。因此，洗衣机能够在保持其洗涤效率的同时高精度地检测洗涤水的污染程度。

8. 发明授权

US08139398B2 Data read/write device 有权
标题翻译：数据读/写设备
公开(公告)号：US08139398B2
公开(公告)日：2012-03-20
申请号：US13052803
申请日：2011-03-21
申请人： Koichi Kubo , Takahiro Hirai , Shinya Aoki , Robin Carter , Chikayoshi Kamata
发明人： Koichi Kubo , Takahiro Hirai , Shinya Aoki , Robin Carter , Chikayoshi Kamata
IPC分类号： G11C11/00
CPC分类号： G11B9/04 , B82Y10/00 , G11B9/149 , G11B11/08 , G11C13/0007 , G11C13/0009 , G11C13/003 , G11C2213/12 , G11C2213/55 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/2409 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/126 , H01L45/147
摘要： A data read/write device according to an example of the present invention includes a recording layer, and means for applying a voltage to the recording layer, generating a resistance change in the recording layer, and recording data. The recording layer is composed of a composite compound having at least two types of cation elements, at least one type of the cation element is a transition element having a “d” orbit in which electrons have been incompletely filled, and the shortest distance between the adjacent cation elements is 0.32 nm or less.
摘要翻译：根据本发明的示例的数据读/写设备包括记录层，以及用于向记录层施加电压，产生记录层中的电阻变化和记录数据的装置。记录层由具有至少两种阳离子元素的复合化合物组成，至少一种阳离子元素是具有电子未完全填充的“d”轨道的过渡元素，并且相邻的阳离子元素为0.32nm以下。

9. 发明授权

US07989794B2 Resistance change memory device for storing information in a non-volatile manner by changing resistance of memory material 有权
标题翻译：电阻变化存储装置，用于通过改变存储材料的电阻来以不挥发的方式存储信息
公开(公告)号：US07989794B2
公开(公告)日：2011-08-02
申请号：US12820996
申请日：2010-06-22
申请人： Haruki Toda , Koichi Kubo
发明人： Haruki Toda , Koichi Kubo
IPC分类号： H01L29/02
CPC分类号： G11C8/14 , G11C13/0007 , G11C13/0028 , G11C13/004 , G11C13/0069 , G11C2013/0042 , G11C2213/31 , G11C2213/56 , G11C2213/71 , G11C2213/72 , H01L27/2409 , H01L27/2472 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/126 , H01L45/1266 , H01L45/146 , H01L45/147
摘要： A resistance change memory device including a substrate, first and second wiring lines formed above the substrate to be insulated from each other, and memory cells disposed between the first and second wiring lines, wherein the memory cell includes: a variable resistance element for storing as information a resistance value; and a Schottky diode connected in series to the variable resistance element. The variable resistance element has: a recording layer formed of a composite compound containing at least one transition element and a cavity site for housing a cation ion; and electrodes formed on the opposite sides of the recording layer, one of which serves as a cation source in a write or erase mode for supplying a cation to the recording layer to be housed in the cavity site therein.
摘要翻译：一种电阻变化存储装置，包括基板，形成在基板上方彼此绝缘的第一和第二布线，以及设置在第一和第二布线之间的存储单元，其中存储单元包括：可变电阻元件，用于存储为信息电阻值; 和与可变电阻元件串联连接的肖特基二极管。可变电阻元件具有：由包含至少一个过渡元素和用于容纳阳离子离子的空腔部位的复合化合物形成的记录层; 以及形成在记录层的相对侧上的电极，其中一个用作写入或擦除模式的阳离子源，用于将阳离子供应到要容纳在其中的腔室位置的记录层。

10. 发明申请

US20100263722A1 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20100263722A1
公开(公告)日：2010-10-21
申请号：US12729331
申请日：2010-03-23
申请人： Koichi Kubo , Takahiro Mishima
发明人： Koichi Kubo , Takahiro Mishima
IPC分类号： H01L31/00 , H01L31/18
CPC分类号： H01L31/0747 , H01L31/02167 , H01L31/022441 , H01L31/0682 , Y02E10/547
摘要： The invention provides a solar cell of increased manufacturing productivity. An aspect of the invention provides a solar cell that comprises a semiconductor substrate having a light-receiving surface and a back surface disposed at the opposite side from the light-receiving surface; a n-type semiconductor region and a p-type semiconductor region both formed on the back surface; and a protection layer formed on the light-receiving surface, the protection layer includes a first surface formed on the semiconductor substrate side and a second surface formed on the opposite side from the first surface, and the second surface has a higher acid-resistance than the first surface.
摘要翻译：本发明提供了一种提高制造生产率的太阳能电池。本发明的一个方面提供了一种太阳能电池，其包括具有光接收表面和设置在与光接收表面相对的一侧的后表面的半导体衬底; 在后表面上形成的n型半导体区域和p型半导体区域; 以及形成在所述受光面上的保护层，所述保护层包括形成在所述半导体衬底侧的第一表面和与所述第一表面相反的一侧上形成的第二表面，并且所述第二表面具有比第一个表面。

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