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    • 2. 发明授权
    • Plasma etch process using polymerizing etch gases across a wafer surface and additional polymer managing or controlling gases in independently fed gas zones with time and spatial modulation of gas content
    • 使用在晶片表面上聚合蚀刻气体的等离子体蚀刻工艺,以及在独立供气气体区域中管理或控制气体的另外的聚合物,其中气体含量随时间和空间调制
    • US07540971B2
    • 2009-06-02
    • US11414015
    • 2006-04-28
    • Kallol BeraXiaoye ZhaoKenny L. DoanEzra Robert GoldPaul Lukas BrillhartBruno GeoffrionBryan PuDaniel J. Hoffman
    • Kallol BeraXiaoye ZhaoKenny L. DoanEzra Robert GoldPaul Lukas BrillhartBruno GeoffrionBryan PuDaniel J. Hoffman
    • H01L21/00C23F1/00
    • H01L21/31116H01J37/321H01J37/32449H01J2237/3347
    • A plasma etch process etches high aspect ratio openings in a dielectric film on a workpiece in a reactor having a ceiling electrode overlying the workpiece and an electrostatic chuck supporting the workpiece. The process includes injecting a polymerizing etch process gas through an annular zone of gas injection orifices in the ceiling electrode, and evacuating gas from the reactor through a pumping annulus surrounding an edge of the workpiece. The high aspect ratio openings are etched in the dielectric film with etch species derived from the etch process gas while depositing a polymer derived from the etch process gas onto the workpiece, by generating a plasma in the reactor by applying VHF source power and/or HF and/or LF bias power to the electrodes at the ceiling and/or the electrostatic chuck. The process further includes slowing the deposition rate of the polymer, minimizing etch stop and/or increasing the etch rate in a region of the workpiece typically the center by injecting oxygen or nitrogen and/or high-fluorine containing gas through gas injection orifice in the corresponding region of the ceiling electrode, and adjusting the flow rate of the oxygen or nitrogen and/or high-fluorine containing gas through the gas injection orifice to minimize the difference between profiles and etch depths at the workpiece center and the workpiece periphery.
    • 等离子体蚀刻工艺在具有覆盖在工件上的天花板电极的反应器中的工件上的电介质膜中蚀刻高纵横比孔,以及支撑工件的静电卡盘。 该方法包括将聚合蚀刻工艺气体注入天花板电极中的气体注入孔的环形区域,以及通过围绕工件边缘的泵送环从反应器排出气体。 通过在蚀刻工艺气体中衍生出蚀刻物质,同时将从蚀刻工艺气体衍生的聚合物沉积到工件上,通过在反应器中产生等离子体,通过施加VHF源功率和/或HF来在电介质膜中蚀刻高纵横比开口 和/或LF偏压电力到天花板和/或静电卡盘上的电极。 该方法进一步包括减缓聚合物的沉积速率,通过在气体喷射孔中注入氧或氮和/或高含氟气体,在工件的区域中通常为中心使蚀刻停止和/或增加蚀刻速率最小化 并且通过气体注入孔调节氧气或氮气和/或高含氟气体的流量,以最小化工件中心和工件外围处的轮廓和蚀刻深度之间的差异。
    • 4. 发明授权
    • Plasma reactor apparatus with multiple gas injection zones having time-changing separate configurable gas compositions for each zone
    • 具有多个气体注入区域的等离子体反应器装置,其具有用于每个区域的时变单独的可配置气体组成
    • US08231799B2
    • 2012-07-31
    • US11414026
    • 2006-04-28
    • Kallol BeraXiaoye ZhaoKenny L. DoanEzra Robert GoldPaul Lukas BrillhartBruno GeoffrionBryan PuDaniel J. Hoffman
    • Kallol BeraXiaoye ZhaoKenny L. DoanEzra Robert GoldPaul Lukas BrillhartBruno GeoffrionBryan PuDaniel J. Hoffman
    • H01L21/00C23C16/00
    • H01L21/3065H01J37/32082H01J37/3244H01J37/32449H01L21/31116
    • A plasma reactor for processing a workpiece such as a semiconductor wafer has a housing defining a process chamber, a workpiece support configured to support a workpiece within the chamber during processing and comprising a plasma bias power electrode. The reactor further includes plural gas sources containing different gas species, plural process gas inlets and an array of valves capable of coupling any of said plural gas sources to any of said plural process gas inlets. The reactor also includes a controller governing said array of valves and is programmed to change the flow rates of gases through said inlets over time. A ceiling plasma source power electrode of the reactor has plural gas injection zones coupled to the respective process gas inlets. In a preferred embodiment, the plural gas sources comprise supplies containing, respectively, fluorocarbon or fluorohydrocarbon species with respectively different ratios of carbon and fluorine chemistries. They further include an oxygen or nitrogen supply and a diluent gas supply. The controller is programmed to produce flow of different process gas species or mixtures thereof through different ones of said plural gas injection zones. The controller is further programmed to change over time the species content of the gases flowing through different ones of said plural gas injection zones.
    • 用于处理诸如半导体晶片的工件的等离子体反应器具有限定处理室的壳体,被配置为在处理期间支撑室内的工件并包括等离子体偏置功率电极的工件支撑件。 反应器还包括含有不同气体种类的多个气体源,多个处理气体入口和能够将所述多个气体源中的任一个耦合到所述多个处理气体入口中的任何一个的阀阵列。 反应器还包括控制所述阀阵列的控制器,并被编程为随时间改变通过所述入口的气体的流速。 反应器的天花板等离子体源功率电极具有耦合到各个工艺气体入口的多个气体注入区域。 在一个优选的实施方案中,多个气体源包括分别含有分别具有不同比例的碳和氟化学物质的碳氟化合物或氟代烃物质的物料。 它们还包括氧气或氮气供应和稀释气体供应。 控制器被编程为通过不同的所述多个气体注入区域产生不同工艺气体种类或其混合物的流动。 控制器进一步被编程为随时间改变流过不同的所述多个气体注入区域的气体的物质含量。