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1. 发明授权

US08253182B2 Nonvolatile semiconductor memory and method for fabricating the same 有权
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US08253182B2
公开(公告)日：2012-08-28
申请号：US12588203
申请日：2009-10-07
申请人： Minori Kajimoto , Mitsuhiro Noguchi , Akira Goda
发明人： Minori Kajimoto , Mitsuhiro Noguchi , Akira Goda
IPC分类号： H01L29/76
CPC分类号： H01L27/11568 , H01L21/76838 , H01L27/115 , H01L27/11521
摘要： A nonvolatile semiconductor memory includes a first semiconductor layer; second semiconductor regions formed on the first semiconductor layer having device isolating regions extended in a column direction; a first interlayer insulator film formed above the first semiconductor layer; a lower conductive plug connected to the second semiconductor regions; a first interconnect extended in a row direction; a second interlayer insulator formed on the lower conductive plug and the first interlayer insulator film; an upper conductive plug; and a second interconnect formed on the second interlayer insulator contacting with the top of the upper conductive plug extended in the column direction.
摘要翻译：非易失性半导体存储器包括：第一半导体层; 形成在第一半导体层上的第二半导体区域，具有沿列方向延伸的器件隔离区域; 形成在所述第一半导体层上方的第一层间绝缘膜; 连接到第二半导体区域的下导电插塞; 沿行方向延伸的第一互连; 形成在下导电插塞和第一层间绝缘膜上的第二层间绝缘膜; 上导电插头; 以及形成在与沿列方向延伸的上导电插塞的顶部接触的第二层间绝缘体上的第二互连。

2. 发明授权

US07326993B2 Nonvolatile semiconductor memory and method for fabricating the same 失效
公开(公告)号：US07326993B2
公开(公告)日：2008-02-05
申请号：US10890132
申请日：2004-07-14
申请人： Minori Kajimoto , Mitsuhiro Noguchi , Akira Goda
发明人： Minori Kajimoto , Mitsuhiro Noguchi , Akira Goda
IPC分类号： H01L29/788 , H01L23/522
CPC分类号： H01L27/11568 , H01L21/76838 , H01L27/115 , H01L27/11521
摘要： A nonvolatile semiconductor memory includes a first semiconductor layer; second semiconductor regions formed on the first semiconductor layer having device isolating regions extended in a column direction; a first interlayer insulator film formed above the first semiconductor layer; a lower conductive plug connected to the second semiconductor regions; a first interconnect extended in a row direction; a second interlayer insulator formed on the lower conductive plug and the first interlayer insulator film; an upper conductive plug; and a second interconnect formed on the second interlayer insulator contacting with the top of the upper conductive plug extended in the column direction.

3. 发明申请

US20100052032A1 Nonvolatile semiconductor memory and method for fabricating the same 有权
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US20100052032A1
公开(公告)日：2010-03-04
申请号：US12588203
申请日：2009-10-07
申请人： Minori Kajimoto , Mitsuhiro Noguchi , Akira Goda
发明人： Minori Kajimoto , Mitsuhiro Noguchi , Akira Goda
IPC分类号： H01L29/788
CPC分类号： H01L27/11568 , H01L21/76838 , H01L27/115 , H01L27/11521
摘要： A nonvolatile semiconductor memory includes a first semiconductor layer; second semiconductor regions formed on the first semiconductor layer having device isolating regions extended in a column direction; a first interlayer insulator film formed above the first semiconductor layer; a lower conductive plug connected to the second semiconductor regions; a first interconnect extended in a row direction; a second interlayer insulator formed on the lower conductive plug and the first interlayer insulator film; an upper conductive plug; and a second interconnect formed on the second interlayer insulator contacting with the top of the upper conductive plug extended in the column direction.
摘要翻译：非易失性半导体存储器包括：第一半导体层; 形成在第一半导体层上的第二半导体区域，具有沿列方向延伸的器件隔离区域; 形成在所述第一半导体层上方的第一层间绝缘膜; 连接到第二半导体区域的下导电插塞; 沿行方向延伸的第一互连; 形成在下导电插塞和第一层间绝缘膜上的第二层间绝缘膜; 上导电插头; 以及形成在与沿列方向延伸的上导电插塞的顶部接触的第二层间绝缘体上的第二互连。

4. 发明授权

US07622762B2 Nonvolatile semiconductor memory and method for fabricating the same 失效
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US07622762B2
公开(公告)日：2009-11-24
申请号：US12000396
申请日：2007-12-12
申请人： Minori Kajimoto , Mitsuhiro Noguchi , Akira Goda
发明人： Minori Kajimoto , Mitsuhiro Noguchi , Akira Goda
IPC分类号： H01L29/788
CPC分类号： H01L27/11568 , H01L21/76838 , H01L27/115 , H01L27/11521
摘要： A nonvolatile semiconductor memory includes a first semiconductor layer; second semiconductor regions formed on the first semiconductor layer having device isolating regions extended in a column direction; a first interlayer insulator film formed above the first semiconductor layer; a lower conductive plug connected to the second semiconductor regions; a first interconnect extended in a row direction; a second interlayer insulator formed on the lower conductive plug and the first interlayer insulator film; an upper conductive plug; and a second interconnect formed on the second interlayer insulator contacting with the top of the upper conductive plug extended in the column direction.
摘要翻译：非易失性半导体存储器包括：第一半导体层; 形成在第一半导体层上的第二半导体区域，具有沿列方向延伸的器件隔离区域; 形成在所述第一半导体层上方的第一层间绝缘膜; 连接到第二半导体区域的下导电插塞; 沿行方向延伸的第一互连; 形成在下导电插塞和第一层间绝缘膜上的第二层间绝缘膜; 上导电插头; 以及形成在与沿列方向延伸的上导电插塞的顶部接触的第二层间绝缘体上的第二互连。

5. 发明申请

US20050051831A1 Nonvolatile semiconductor memory and method for fabricating the same 失效
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US20050051831A1
公开(公告)日：2005-03-10
申请号：US10890132
申请日：2004-07-14
申请人： Minori Kajimoto , Mitsuhiro Noguchi , Akira Goda
发明人： Minori Kajimoto , Mitsuhiro Noguchi , Akira Goda
IPC分类号： H01L21/28 , H01L21/768 , H01L21/8246 , H01L21/8247 , H01L27/115 , H01L29/76 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11568 , H01L21/76838 , H01L27/115 , H01L27/11521
摘要： A nonvolatile semiconductor memory includes a first semiconductor layer; second semiconductor regions formed on the first semiconductor layer having device isolating regions extended in a column direction; a first interlayer insulator film formed above the first semiconductor layer; a lower conductive plug connected to the second semiconductor regions; a first interconnect extended in a row direction; a second interlayer insulator formed on the lower conductive plug and the first interlayer insulator film; an upper conductive plug; and a second interconnect formed on the second interlayer insulator contacting with the top of the upper conductive plug extended in the column direction.
摘要翻译：非易失性半导体存储器包括：第一半导体层; 形成在第一半导体层上的第二半导体区域，具有沿列方向延伸的器件隔离区域; 形成在所述第一半导体层上方的第一层间绝缘膜; 连接到第二半导体区域的下导电插塞; 沿行方向延伸的第一互连; 形成在下导电插塞和第一层间绝缘膜上的第二层间绝缘膜; 上导电插头; 以及形成在与沿列方向延伸的上导电插塞的顶部接触的第二层间绝缘体上的第二互连。

6. 发明申请

US20050265109A1 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US20050265109A1
公开(公告)日：2005-12-01
申请号：US11135415
申请日：2005-05-24
申请人： Akira Goda , Mitsuhiro Noguchi , Minori Kajimoto , Yuji Takeuchi
发明人： Akira Goda , Mitsuhiro Noguchi , Minori Kajimoto , Yuji Takeuchi
IPC分类号： H01L27/10 , G11C8/00 , G11C8/10 , G11C16/04 , G11C16/08 , G11C16/10 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： G11C8/10 , G11C16/0483 , G11C16/08 , G11C16/10 , H01L27/115 , H01L27/11521
摘要： A nonvolatile semiconductor memory includes: a memory cell array constituted by word lines, bit lines, and electrically erasable/rewritable memory cell transistors, which have respective tunnel insulating films and are arranged at the intersections of the word lines and the bit lines; and a word line transfer transistor, which is separated by an element isolation region, has a source diffusion layer, a channel region, a gate insulating film on the channel region, and a drain diffusion layer, and is connected to a word line and a gate electrode formed on the gate insulating film via a word line contact plug formed in the drain diffusion layer. The channel width of the word line transfer transistor is at least six times width of the word line contact plug, and the distance in a second direction between the word line contact plug and corresponding element isolation region is greater than distance in a first direction between the word line contact plug and corresponding element isolation region where, the first direction denotes a direction from the source diffusion layer towards the drain diffusion layer, and the second direction denotes a direction perpendicular to the first direction.
摘要翻译：非易失性半导体存储器包括：由字线，位线和电可擦除/可重写存储单元晶体管构成的存储单元阵列，其具有相应的隧道绝缘膜并且布置在字线和位线的交点处; 并且由元件隔离区隔开的字线传输晶体管在沟道区上具有源极扩散层，沟道区，栅极绝缘膜和漏极扩散层，并且连接到字线和栅极通过形成在漏极扩散层中的字线接触插塞形成在栅极绝缘膜上。字线传输晶体管的沟道宽度是字线接触插塞的至少六倍宽度，并且字线接触插塞和对应元件隔离区域之间的第二方向上的距离大于第二方向上的距离字线接触插塞和对应元件隔离区域，其中第一方向表示从源极扩散层朝向漏极扩散层的方向，第二方向表示与第一方向垂直的方向。

7. 发明申请

US20080122098A1 Nonvolatile semiconductor memory and method for fabricating the same 失效
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US20080122098A1
公开(公告)日：2008-05-29
申请号：US12000396
申请日：2007-12-12
申请人： Minori Kajimoto , Mitsuhiro Noguchi , Akira Goda
发明人： Minori Kajimoto , Mitsuhiro Noguchi , Akira Goda
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L27/11568 , H01L21/76838 , H01L27/115 , H01L27/11521
摘要： A nonvolatile semiconductor memory includes a first semiconductor layer; second semiconductor regions formed on the first semiconductor layer having device isolating regions extended in a column direction; a first interlayer insulator film formed above the first semiconductor layer; a lower conductive plug connected to the second semiconductor regions; a first interconnect extended in a row direction; a second interlayer insulator formed on the lower conductive plug and the first interlayer insulator film; an upper conductive plug; and a second interconnect formed on the second interlayer insulator contacting with the top of the upper conductive plug extended in the column direction.
摘要翻译：非易失性半导体存储器包括：第一半导体层; 形成在第一半导体层上的第二半导体区域，具有沿列方向延伸的器件隔离区域; 形成在所述第一半导体层上方的第一层间绝缘膜; 连接到第二半导体区域的下导电插塞; 沿行方向延伸的第一互连; 形成在下导电插塞和第一层间绝缘膜上的第二层间绝缘膜; 上导电插头; 以及形成在与沿列方向延伸的上导电插塞的顶部接触的第二层间绝缘体上的第二互连。

8. 发明授权

US07245534B2 Nonvolatile semiconductor memory 有权
标题翻译：非易失性半导体存储器
公开(公告)号：US07245534B2
公开(公告)日：2007-07-17
申请号：US11135415
申请日：2005-05-24
申请人： Akira Goda , Mitsuhiro Noguchi , Minori Kajimoto , Yuji Takeuchi
发明人： Akira Goda , Mitsuhiro Noguchi , Minori Kajimoto , Yuji Takeuchi
IPC分类号： G11C11/34
CPC分类号： G11C8/10 , G11C16/0483 , G11C16/08 , G11C16/10 , H01L27/115 , H01L27/11521
摘要： A nonvolatile semiconductor memory includes: a memory cell array constituted by word lines, bit lines, and electrically erasable/rewritable memory cell transistors, which have respective tunnel insulating films and are arranged at the intersections of the word lines and the bit lines; and a word line transfer transistor, which is separated by an element isolation region, has a source diffusion layer, a channel region, a gate insulating film on the channel region, and a drain diffusion layer, and is connected to a word line and a gate electrode formed on the gate insulating film via a word line contact plug formed in the drain diffusion layer. The channel width of the word line transfer transistor is at least six times width of the word line contact plug, and the distance in a second direction between the word line contact plug and corresponding element isolation region is greater than distance in a first direction between the word line contact plug and corresponding element isolation region where, the first direction denotes a direction from the source diffusion layer towards the drain diffusion layer, and the second direction denotes a direction perpendicular to the first direction.
摘要翻译：非易失性半导体存储器包括：由字线，位线和电可擦除/可重写存储单元晶体管构成的存储单元阵列，其具有相应的隧道绝缘膜并且布置在字线和位线的交点处; 并且由元件隔离区隔开的字线传输晶体管在沟道区上具有源极扩散层，沟道区，栅极绝缘膜和漏极扩散层，并且连接到字线和栅极通过形成在漏极扩散层中的字线接触插塞形成在栅极绝缘膜上。字线传输晶体管的沟道宽度是字线接触插塞的至少六倍宽度，并且字线接触插塞和对应元件隔离区域之间的第二方向上的距离大于第二方向上的距离字线接触插塞和对应元件隔离区域，其中第一方向表示从源极扩散层朝向漏极扩散层的方向，第二方向表示与第一方向垂直的方向。

9. 发明授权

US07372113B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07372113B2
公开(公告)日：2008-05-13
申请号：US10880508
申请日：2004-07-01
申请人： Masayuki Tanaka , Yoshio Ozawa , Shigehiko Saida , Akira Goda , Mitsuhiro Noguchi , Yuichiro Mitani , Yoshitaka Tsunashima
发明人： Masayuki Tanaka , Yoshio Ozawa , Shigehiko Saida , Akira Goda , Mitsuhiro Noguchi , Yuichiro Mitani , Yoshitaka Tsunashima
IPC分类号： H01L21/314
CPC分类号： H01L21/022 , H01L21/0217 , H01L21/28176 , H01L21/28202 , H01L21/28247 , H01L21/28282 , H01L21/28518 , H01L21/3185 , H01L21/76838 , H01L21/76897 , H01L29/513 , H01L29/518 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/792
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, a gate electrode, a first insulating film formed between the semiconductor substrate and the gate electrode, and a second insulating film formed along a top surface or a side surface of the gate electrode and including a lower silicon nitride film containing nitrogen, silicon and hydrogen and an upper silicon nitride film formed on the lower silicon nitride film and containing nitrogen, silicon and hydrogen, and wherein a composition ratio N/Si of nitrogen (N) to silicon (Si) in the lower silicon nitride film is higher than that in the upper silicon nitride film.
摘要翻译：公开了一种半导体器件，包括半导体衬底，栅电极，形成在半导体衬底和栅电极之间的第一绝缘膜，以及沿着栅电极的顶表面或侧表面形成的第二绝缘膜，包含氮，硅和氢的氮化硅膜和形成在下部氮化硅膜上并含有氮，硅和氢的上部氮化硅膜，并且其中氮（N）与硅（Si）的组成比N / Si在下氮化硅膜比上述氮化硅膜高。

10. 发明授权

US07006379B2 Semiconductor memory 有权
标题翻译：半导体存储器
公开(公告)号：US07006379B2
公开(公告)日：2006-02-28
申请号：US11068228
申请日：2005-03-01
申请人： Mitsuhiro Noguchi , Akira Goda , Yasuhiko Matsunaga
发明人： Mitsuhiro Noguchi , Akira Goda , Yasuhiko Matsunaga
IPC分类号： G11C16/04
CPC分类号： G11C16/26 , G11C16/0483 , H01L27/115
摘要： A semiconductor memory including a memory cell unit, the memory cell unit comprising: a plurality of memory cells in which each conductance between current terminals changes according to held data, each having a plurality of current terminals connected in series between a first terminal and a second terminal, and each capable of electrically rewriting the data; a first select switching element electrically connecting said first terminal to a data transfer line; and a MISFET serving as a second select switching element connecting said second terminal to a reference potential line, wherein said semiconductor memory has a data read mode for forcing the first and second select switching elements of said memory cell unit into conduction, applying a read voltage for forcing a path between the current terminals into conduction or cut-off according to the data of a selected memory cell, to a control electrode of the selected memory cell, applying a pass voltage for forcing a path between the current terminals into conduction irrespectively of the data of each of the memory cells other than said selected memory cell, to the control electrode of each of the memory cells other than said selected memory cell, and detecting presence and absence or magnitude of a current between said data transfer line and said reference potential line, and in said data read mode, a conductance between current terminals of said MISFET is set lower than a conductance, in the case where the conductance between the current terminals is set to be the lowest, with regards to at least one of the memory cells other than said selected memory cell.
摘要翻译：一种包括存储单元单元的半导体存储器，所述存储单元单元包括：多个存储单元，其中当前端子之间的每个电导根据保持的数据而改变，每个存储单元具有串联连接在第一端子和第二端子之间的多个电流端子终端，并且每个都能够电气地重写数据; 将所述第一端子电连接到数据传输线路的第一选择开关元件; 以及用作将所述第二端子连接到参考电位线的第二选择开关元件的MISFET，其中所述半导体存储器具有用于将所述存储单元单元的第一和第二选择开关元件强制为导通的数据读取模式，施加读取电压用于根据所选择的存储单元的数据将当前端子之间的路径强制为导通或截止，到所选存储单元的控制电极，施加通过电压，以迫使当前端子之间的路径导通，而不管除了所述选择的存储单元之外的每个存储单元的数据，还包括除了所选择的存储单元之外的每个存储单元的控制电极，以及检测所述数据传输线与所述参考电压之间的电流的存在和否定电位线，并且在所述数据读取模式中，将所述MISFET的电流端子之间的电导设置为低于电导，关于当前终端之间的电导被设置为最低的情况，关于除了所选择的存储单元之外的至少一个存储单元。

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