专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20220367542A1 CMOS IMAGE SENSOR WITH LED FLICKERING REDUCTION AND LOW COLOR CROSS-TALK 有权
公开(公告)号：US20220367542A1
公开(公告)日：2022-11-17
申请号：US17322536
申请日：2021-05-17
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Duli Mao , Bill Phan , Seong Yeol Mun , Yuanliang Liu , Alireza Bonakdar , Chengming Liu , Zhiqiang Lin
IPC分类号： H01L27/146
摘要： CMOS image sensor with LED flickering reduction and low color cross-talk are disclosed. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that is disposed in a semiconductor substrate. Each pixel includes a plurality of large subpixels (LPDs) and at least one small subpixel (SPD). A plurality of color filters are disposed over individual subpixels. Each individual SPD is laterally adjacent to at least one other SPD.

2. 发明申请

US20220352224A1 CMOS IMAGE SENSOR WITH MULTIPLE SENSITIVITIES FOR HIGH DYNAMIC RANGE IMAGING AND LED FLICKER MITIGATION 有权
公开(公告)号：US20220352224A1
公开(公告)日：2022-11-03
申请号：US17244776
申请日：2021-04-29
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Chengming Liu , Zhiqiang Lin , Duli Mao , Lingtao Jiang
IPC分类号： H01L27/146
摘要： CMOS image sensor with multiple sensitivities for high dynamic range imaging and LED flicker mitigation. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that is disposed in a semiconductor substrate. Each pixel includes a plurality of cells. A plurality of color filters is disposed over corresponding plurality of cells. The plurality of color filters corresponding to the plurality of cells of an individual pixel have more than one filtering strength for each color of the plurality of color filters.

3. 发明授权

US11289523B2 Image sensor with reduced petal flare 有权
公开(公告)号：US11289523B2
公开(公告)日：2022-03-29
申请号：US16563052
申请日：2019-09-06
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Alireza Bonakdar , Zhiqiang Lin
IPC分类号： H01L27/00 , H01L27/146
摘要： An image sensor includes a substrate material, an array of the color filters, an array of waveguides and spacers. The substrate material includes a plurality of photodiodes disposed therein. The array of color filters are disposed over the substrate material. The array of waveguides are disposed over the substrate material. The buffer layer is disposed between the substrate material and the arrays of color filters and waveguides. The spacers are disposed between the color filters in the array of color filters. The spacers are disposed between the waveguides in the array of waveguides. Incident light is adapted to be confined between the spacers. The incident light is adapted to be directed through one of the waveguides and through one of the color filters prior to being directed through the buffer layer into one of the photodiodes in the substrate material.

4. 发明授权

US08969775B2 High dynamic range pixel having a plurality of amplifier transistors 有权
标题翻译：具有多个放大器晶体管的高动态范围像素
公开(公告)号：US08969775B2
公开(公告)日：2015-03-03
申请号：US13781388
申请日：2013-02-28
申请人： Omnivision Technologies, Inc.
发明人： Gang Chen , Zhiqiang Lin , Sing-Chung Hu , Duli Mao , Hsin-Chih Tai
IPC分类号： H01L27/00 , H04N5/335
CPC分类号： H04N5/335 , H04N5/2355 , H04N5/3559 , H04N5/3745 , H04N5/37452
摘要： A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.
摘要翻译：用于高动态范围图像传感器的像素单元包括设置在半导体材料中的光电二极管，以响应入射到光电二极管上的光来积累电荷。传输晶体管设置在半导体材料中并且耦合在浮动扩散和光电二极管之间。第一放大器晶体管设置在半导体材料中，其栅极端子耦合到浮动扩散部分，源极端子被耦合以产生像素单元的第一输出信号。第二放大器晶体管设置在具有耦合到浮动扩散的栅极端子的半导体材料中，以及耦合以产生像素单元的第二输出信号的源极端子。

5. 发明申请

US20140239154A1 HIGH DYNAMIC RANGE PIXEL HAVING A PLURALITY OF AMPLIFIER TRANSISTORS 有权
标题翻译：具有多个放大器晶体管的高动态范围像素
公开(公告)号：US20140239154A1
公开(公告)日：2014-08-28
申请号：US13781388
申请日：2013-02-28
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Gang Chen , Zhiqiang Lin , Sing-Chung Hu , Duli Mao , Hsin-Chih Tai
IPC分类号： H01L27/148
CPC分类号： H04N5/335 , H04N5/2355 , H04N5/3559 , H04N5/3745 , H04N5/37452
摘要： A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.
摘要翻译：用于高动态范围图像传感器的像素单元包括设置在半导体材料中的光电二极管，以响应入射到光电二极管上的光来积累电荷。传输晶体管设置在半导体材料中并且耦合在浮动扩散和光电二极管之间。第一放大器晶体管设置在半导体材料中，其栅极端子耦合到浮动扩散部分，源极端子被耦合以产生像素单元的第一输出信号。第二放大器晶体管设置在具有耦合到浮动扩散的栅极端子的半导体材料中，以及耦合以产生像素单元的第二输出信号的源极端子。

6. 发明授权

US11158661B2 Image sensor with micro-structured color filter 有权
公开(公告)号：US11158661B2
公开(公告)日：2021-10-26
申请号：US16576603
申请日：2019-09-19
申请人： OmniVision Technologies, Inc.
发明人： Alireza Bonakdar , Zhiqiang Lin
IPC分类号： H01L27/146
摘要： An image sensor includes a two-dimensional photodiode-array formed in a semiconductor substrate, a first waveguide, and a first color filter. The first waveguide is aligned to a first photodiode of the photodiode-array, located above a top substrate surface of the semiconductor substrate. A first core of the first waveguide has a first core width that is less than a pitch of the photodiode-array in a first direction and a second direction corresponding to respective orthogonal dimensions of the photodiode-array. The first color filter is on a top waveguide surface of the first waveguide and has a first non-uniform thickness above the first core. The first waveguide is between the top substrate surface and the first color filter.

7. 发明授权

US10224364B2 CMOS image sensor having enhanced near infrared quantum efficiency and modulation transfer function 有权
公开(公告)号：US10224364B2
公开(公告)日：2019-03-05
申请号：US15666086
申请日：2017-08-01
申请人： OmniVision Technologies, Inc.
发明人： Cheng Zhao , Cunyu Yang , Chen-Wei Lu , Zhiqiang Lin
IPC分类号： H04N5/33 , H04N5/335 , H01L27/146 , H01L27/148 , H04N5/3745
摘要： An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; and a near infrared (NIR) quantum efficiency (QE) and modulation transfer function(MTF) enhancement structure. The NIR QE and MTF enhancement structure comprises: a NIR QE enhancement sub-structure comprising at least one NIR QE enhancement elements within a photosensitive region of the photodiode, wherein the NIR QE enhancement sub-structure is configured to modify the incident light at the illuminated surface of the semiconductor material by at least one of diffraction, deflection and reflection, to redistribute the incident light within the photodiode to improve optical sensitivity, including NIR light sensitivity, of the image sensor; and a MTF enhancement sub-structure disposed on the non-illuminated surface of the semiconductor material, facing toward the NIR QE enhancement sub-structure, wherein the MTF enhancement structure has a geometry corresponding to the NIR QE enhancement sub-structure, to ensure the incident light is still within the photodiode after redistribution.

8. 发明授权

US10044960B2 Systems and methods for detecting light-emitting diode without flickering 有权
公开(公告)号：US10044960B2
公开(公告)日：2018-08-07
申请号：US15164276
申请日：2016-05-25
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Duli Mao , Trygve Willassen , Johannes Solhusvik , Keiji Mabuchi , Gang Chen , Sohei Manabe , Dyson H. Tai , Bill Phan , Oray Orkun Cellek , Zhiqiang Lin , Siguang Ma , Dajiang Yang , Boyd Albert Fowler
IPC分类号： H04N5/374 , H04N5/232
摘要： An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.

9. 发明申请

US20180098008A1 CMOS IMAGE SENSOR WITH DUAL FLOATING DIFFUSIONS PER PIXEL FOR FLICKER-FREE DETECTION OF LIGHT EMITTING DIODES 有权
公开(公告)号：US20180098008A1
公开(公告)日：2018-04-05
申请号：US15285352
申请日：2016-10-04
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Duli Mao , Trygve Willassen , Johannes Solhusvik , Keiji Mabuchi , Gang Chen , Sohei Manabe , Dyson H. Tai , Bill Phan , Oray Orkun Cellek , Zhiqiang Lin
IPC分类号： H04N5/361 , H04N5/374 , H04N5/378 , H01L27/146
CPC分类号： H04N5/361 , H01L27/14636 , H01L27/14656 , H04N5/374 , H04N5/378
摘要： Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity. The first source-follower transistor may be directly coupled to the first floating diffusion by a gate, the first source-follower to selectively output a first signal to a first bitline in response to enablement of a first row selection transistor, and the second source-follower transistor may be capacitively-coupled to the second floating diffusion, the second source-follower to selectively output a second signal to a second bitline in response to enablement of a second row selection transistor.

10. 发明申请

US20170347047A1 SYSTEMS AND METHODS FOR DETECTING LIGHT-EMITTING DIODE WITHOUT FLICKERING 审中-公开
公开(公告)号：US20170347047A1
公开(公告)日：2017-11-30
申请号：US15164276
申请日：2016-05-25
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Duli Mao , Trygve Willassen , Johannes Solhusvik , Keiji Mabuchi , Gang Chen , Sohei Manabe , Dyson H. Tai , Bill Phan , Oray Orkun Cellek , Zhiqiang Lin , Siguang Ma , Dajiang Yang , Boyd Albert Fowler
IPC分类号： H04N5/374 , H04N5/232
CPC分类号： H04N5/374 , H01L27/14612 , H01L27/14641 , H04N5/23229 , H04N5/3559 , H04N5/3592 , H04N5/37452 , H04N5/37457
摘要： An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式