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    • 1. 发明申请
    • METHODS AND SYSTEMS FOR TRAPPING ION BEAM PARTICLES AND FOCUSING AN ION BEAM
    • 用于捕获离子束颗粒和聚焦离子束的方法和系统
    • US20070295901A1
    • 2007-12-27
    • US11739934
    • 2007-04-25
    • Peter KellermanVictor BenvenisteAlexander PerelBrian FreerMichael Graf
    • Peter KellermanVictor BenvenisteAlexander PerelBrian FreerMichael Graf
    • B01D59/44
    • H01J37/3171H01J37/12H01J2237/022H01J2237/049
    • A focusing particle trap system for ion implantation comprising an ion beam source that generates an ion beam, a beam line assembly that receives the ion beam from the ion beam source comprising a mass analyzer that selectively passes selected ions, a focusing electrostatic particle trap that receives the ion beam and removes particles from the ion beam comprising an entrance electrode comprising an entrance aperture and biased to a first base voltage, wherein the first surface of the entrance electrode is facing away from a center electrode and is approximately flat, wherein the second surface of the entrance electrode is facing toward the center electrode and is concave, wherein the center electrode is positioned a distance downstream from the entrance electrode comprising a center aperture and biased to a center voltage, wherein the center voltage is less than the first base voltage, wherein the first surface of the center electrode is facing toward the entrance electrode and is convex, wherein the second surface of the center electrode is facing away from the entrance electrode and is approximately flat, an exit electrode positioned a distance downstream from the center electrode comprising an exit aperture and biased to a second base voltage, and wherein the first surface of the exit electrode is facing toward the center electrode and is approximately flat, wherein the second surface of the exit electrode is facing away from the center electrode and is approximately flat, wherein a first electrostatic field is generated from the entrance electrode toward the center electrode and a second electrostatic field is generated from the exit electrode toward the center electrode; wherein the second base voltage is greater than the center voltage, and an end station that is downstream from the beam line assembly and receives the ion beam.
    • 一种用于离子注入的聚焦粒子捕获系统,包括产生离子束的离子束源,接收来自离子束源的离子束的束线组件,该束束组件包括选择性地通过选定离子的质量分析器,接收 离子束并且从离子束中除去包含入口电极并且被偏置到第一基极电压的入口电极的颗粒,其中入口电极的第一表面背离中心电极并且近似平坦,其中第二表面 所述入口电极面向所述中心电极并且是凹形的,其中所述中心电极位于与所述入口电极的下游距离的位置,所述入口电极包括中心孔并被偏压到中心电压,其中所述中心电压小于所述第一基极电压, 其中所述中心电极的所述第一表面面向所述入口电极并且被连接 vex,其中所述中心电极的所述第二表面背离所述入口电极并且近似平坦,所述出口电极在所述中心电极的下游距离包括出口孔并且被偏压到第二基极电压,并且其中所述第一表面 所述出射电极的面向所述中心电极并且近似平坦,其中所述出射电极的所述第二表面背离所述中心电极并且近似平坦,其中从所述入射电极朝向所述中心电极产生第一静电场 并且从出射电极向中心电极产生第二静电场; 其中所述第二基极电压大于所述中心电压,以及在所述束线组件的下游并接收所述离子束的端站。
    • 2. 发明申请
    • In-situ monitoring on an ion implanter
    • 离子注入机的原位监测
    • US20050205807A1
    • 2005-09-22
    • US10803439
    • 2004-03-18
    • Alexander PerelLyudmila StoneWilliam LoizidesVictor Benveniste
    • Alexander PerelLyudmila StoneWilliam LoizidesVictor Benveniste
    • G01N15/06G01N21/47G01N21/84G01N21/94G01N21/95H01J37/317H01L21/66H01J37/304
    • G01N21/94G01N21/47G01N21/9501G01N2015/0693G01N2021/4702G01N2021/8416G01N2201/06113H01J2237/0225H01J2237/31701
    • The present invention is directed to in-situ detection of particles and other such features in an ion implantation system during implantation operations to avoid such additional monitoring tool steps otherwise expended before and/or after implantation, for example. One or more such systems are revealed for detecting scattered light from particles on one or more semiconductor wafers illuminated by a light source (e.g., laser beam). The system comprises an ion implanter having a laser for illumination of a spot on the wafer and a pair of detectors (e.g., PMT or photodiode) rotationally opposite from the ion implantation operations. A wafer transport holds a wafer or wafers for translational scanning under the fixed laser spot. A computer analyzes the intensity of the scattered light detected from the illuminated wafer (workpiece), and may also map the light detected to a unique position. For example, particles or other such contaminates may be identified on wafers during the implantation process before additional time and resources are consumed, and aid in determining the sources of such contaminates. Further, threshold analysis of the quantity or size of such particles, for example, may provide a system interlock for shutdown or feedback control.
    • 本发明涉及在植入操作期间在离子注入系统中的颗粒和其它这些特征的原位检测,以避免例如植入之前和/或之后另外消耗的另外的监测工具步骤。 一个或多个这样的系统被揭示用于检测由光源(例如激光束)照射的一个或多个半导体晶片上的颗粒的散射光。 该系统包括具有用于照射晶片上的点的激光器和与离子注入操作旋转相反的一对检测器(例如,PMT或光电二极管)的离子注入机。 晶片传输器在固定的激光光斑下保持用于平移扫描的晶片或晶片。 计算机分析从照射的晶片(工件)检测到的散射光的强度,并且还可以将检测到的光映射到唯一的位置。 例如,在额外的时间和资源被消耗之前,可以在植入过程期间在晶片上识别颗粒或其它这样的污染物,并且有助于确定这些污染物的来源。 此外,例如,这种颗粒的数量或尺寸的阈值分析可以提供用于关闭或反馈控制的系统互锁。
    • 3. 发明申请
    • Ion beam angle measurement systems and methods for ion implantation systems
    • 离子束角度测量系统和离子注入系统的方法
    • US20070145298A1
    • 2007-06-28
    • US11299593
    • 2005-12-12
    • Brian FreerAlexander Perel
    • Brian FreerAlexander Perel
    • H01J37/08
    • H01J37/3171H01J37/244H01J37/304H01J2237/24507H01J2237/24528H01J2237/24578H01J2237/30472H01J2237/31703
    • Angle of incidence measurements along an axis of ion implantation are obtained by employing positive and negative slot structures. The positive slot structures have entrance openings, exit openings, and slot profiles there between that obtain portion(s) of an ion beam having a selected range of angles in a positive direction. The negative slot structures have entrance openings, exit openings, and slot profiles there between that obtain portion(s) of the ion beam having the selected range of angles in a negative direction. A first beam measurement mechanism measures beam current of the positive portion to obtain a positive angle beam current measurement. A second beam measurement mechanism measures beam current of the negative portion to obtain a negative angle beam current measurement. An analyzer component employs the positive angle beam current measurement and the negative angle beam current measurement to determine a measured angle of incidence.
    • 通过采用正和负槽结构,可获得离子注入轴的入射角测量。 正槽结构在其间具有入口开口,出口开口和狭槽轮廓,其在正方向上获得具有选定角度范围的离子束的一部分。 负槽结构在其间具有进入开口,出口开口和狭槽轮廓,其间获得具有在负方向上的选定角度范围的离子束的一部分。 第一光束测量机构测量正部分的光束电流以获得正角度束电流测量。 第二光束测量机构测量负部分的光束电流以获得负角度束电流测量。 分析器组件采用正角度束电流测量和负角度束电流测量来确定测量的入射角。