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1. 发明授权

US08120942B2 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US08120942B2
公开(公告)日：2012-02-21
申请号：US12559931
申请日：2009-09-15
申请人： Takeshi Yamaguchi , Mariko Hayashi , Hirofumi Inoue , Takeshi Araki , Koichi Kubo
发明人： Takeshi Yamaguchi , Mariko Hayashi , Hirofumi Inoue , Takeshi Araki , Koichi Kubo
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C13/0069 , G11C2013/009 , G11C2213/32 , G11C2213/33 , G11C2213/71 , G11C2213/72 , H01L27/101 , H01L27/1021
摘要： A memory array includes a memory cell, the memory cell being disposed between a first line and a second line and being configured by a variable resistor and a rectifier connected in series. The variable resistor is a mixture of silicon oxide (SiO2) and a transition metal oxide, a proportion of the transition metal oxide being set to 55˜80%.
摘要翻译：存储器阵列包括存储器单元，存储单元设置在第一线路和第二线路之间，并且由可变电阻器和串联连接的整流器构成。可变电阻器是氧化硅（SiO 2）和过渡金属氧化物的混合物，过渡金属氧化物的比例设定为55〜80％。

2. 发明授权

US08410540B2 Non-volatile memory device including a stacked structure and voltage application portion 有权
标题翻译：包括堆叠结构和电压施加部分的非易失性存储器件
公开(公告)号：US08410540B2
公开(公告)日：2013-04-02
申请号：US12886079
申请日：2010-09-20
申请人： Takeshi Araki , Takeshi Yamaguchi , Mariko Hayashi , Kohichi Kubo , Takayuki Tsukamoto
发明人： Takeshi Araki , Takeshi Yamaguchi , Mariko Hayashi , Kohichi Kubo , Takayuki Tsukamoto
IPC分类号： H01L29/792
CPC分类号： G11B9/1472 , B82Y10/00 , G11B5/746 , G11B9/04 , G11B9/149 , G11C13/0007 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L27/101 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1625 , H01L45/1675
摘要： According to one embodiment, a non-volatile memory device includes a stacked structure including a memory portion and an electrode having a surface facing the memory portion; and a voltage application portion to apply a voltage to the memory portion to change resistance. The surface includes first and second regions. The first region contains a first nonmetallic element and at least one element of a metallic element, Si, Ga, and As. The second region contains a second nonmetallic element and the at least one element. The second region has a content ratio of the second nonmetallic element higher than that in the first region. A difference in electronegativity between the second nonmetallic element and the at least one element is greater than that between the first nonmetallic element and the at least one element. At least one of the first and second regions has an anisotropic shape.
摘要翻译：根据一个实施例，非易失性存储器件包括堆叠结构，其包括存储器部分和具有面向存储器部分的表面的电极; 以及电压施加部分，用于向存储器部分施加电压以改变电阻。表面包括第一和第二区域。第一区域包含第一非金属元素和金属元素Si，Ga和As的至少一种元素。第二区域包含第二非金属元素和至少一个元素。第二区域的第二非金属元素的含量比率高于第一区域。第二非金属元素与至少一种元素之间的电负性的差异大于第一非金属元素与至少一种元素之间的电负性。第一和第二区域中的至少一个具有各向异性形状。

3. 发明授权

US08698228B2 Non-volatile memory device and method for manufacturing the same 失效
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US08698228B2
公开(公告)日：2014-04-15
申请号：US12886202
申请日：2010-09-20
申请人： Takeshi Araki , Takeshi Yamaguchi , Mariko Hayashi , Kohichi Kubo , Takayuki Tsukamoto
发明人： Takeshi Araki , Takeshi Yamaguchi , Mariko Hayashi , Kohichi Kubo , Takayuki Tsukamoto
IPC分类号： H01L29/792
CPC分类号： H01L27/101 , B82Y10/00 , G11B5/743 , G11B9/04 , G11B9/1472 , G11B9/149 , G11C11/22 , G11C13/0007 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1625 , H01L45/1675
摘要： According to one embodiment, a non-volatile memory device includes a stacked structure and a voltage application portion. The stacked structure includes a memory portion, and an electrode stacked with the memory portion and having a surface having a portion facing the memory portion. The voltage application portion applies a voltage to the memory portion to cause a change in a resistance in the memory portion to store information. The surface includes a first region and a second region. The first region contains at least one of a metallic element, Si, Ga, and As. The first region is conductive. The second region contains at least one of the metallic element, Si, Ga, and As, and has a content ratio of nonmetallic element higher than a content ratio of nonmetallic element in the first region. At least one of the first region and the second region has an anisotropic shape on the surface.
摘要翻译：根据一个实施例，非易失性存储器件包括堆叠结构和电压施加部分。堆叠结构包括存储部分和与存储器部分堆叠并具有面向存储部分的部分的表面的电极。电压施加部分向存储器部分施加电压以引起存储器部分中的电阻的变化以存储信息。表面包括第一区域和第二区域。第一区域包含金属元素Si，Ga和As中的至少一种。第一个区域是导电的。第二区域包含金属元素Si，Ga和As中的至少一种，并且具有高于第一区域中的非金属元素的含量比的非金属元素的含量比。第一区域和第二区域中的至少一个在表面上具有各向异性的形状。

4. 发明申请

US20110073927A1 NON-VOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20110073927A1
公开(公告)日：2011-03-31
申请号：US12886079
申请日：2010-09-20
申请人： Takeshi ARAKI , Takeshi Yamaguchi , Mariko Hayashi , Kohichi Kubo , Takayuki Tsukamoto
发明人： Takeshi ARAKI , Takeshi Yamaguchi , Mariko Hayashi , Kohichi Kubo , Takayuki Tsukamoto
IPC分类号： H01L29/772 , H01L21/28
CPC分类号： G11B9/1472 , B82Y10/00 , G11B5/746 , G11B9/04 , G11B9/149 , G11C13/0007 , G11C2213/56 , G11C2213/71 , G11C2213/77 , H01L27/101 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/147 , H01L45/16 , H01L45/1625 , H01L45/1675
摘要： According to one embodiment, a non-volatile memory device includes a stacked structure including a memory portion and an electrode having a surface facing the memory portion; and a voltage application portion to apply a voltage to the memory portion to change resistance. The surface includes first and second regions. The first region contains a first nonmetallic element and at least one element of a metallic element, Si, Ga, and As. The second region contains a second nonmetallic element and the at least one element. The second region has a content ratio of the second nonmetallic element higher than that in the first region. A difference in electronegativity between the second nonmetallic element and the at least one element is greater than that between the first nonmetallic element and the at least one element. At least one of the first and second regions has an anisotropic shape.
摘要翻译：根据一个实施例，非易失性存储器件包括堆叠结构，其包括存储器部分和具有面向存储器部分的表面的电极; 以及电压施加部分，用于向存储器部分施加电压以改变电阻。表面包括第一和第二区域。第一区域包含第一非金属元素和金属元素Si，Ga和As的至少一种元素。第二区域包含第二非金属元素和至少一个元素。第二区域的第二非金属元素的含量比率高于第一区域。第二非金属元素与至少一种元素之间的电负性的差异大于第一非金属元素与至少一种元素之间的电负性。第一和第二区域中的至少一个具有各向异性形状。

5. 发明授权

US08124568B2 Oxide superconductor and method of fabricating same 有权
标题翻译：氧化物超导体及其制造方法
公开(公告)号：US08124568B2
公开(公告)日：2012-02-28
申请号：US12243087
申请日：2008-10-01
申请人： Mariko Hayashi , Takeshi Araki
发明人： Mariko Hayashi , Takeshi Araki
IPC分类号： H01L39/12 , H01B12/00
CPC分类号： H01L39/143 , H01L39/2425 , H01L39/2451
摘要： An oxide superconductor with superconduction properties being improved by effectively introducing a pinning center thereinto and its fabrication method are disclosed. The superconductor has a high-crystallinity oxide superconductor film which is formed on a substrate with a direction of crystal grain being oriented almost perpendicularly to the substrate and with (100) planes of neighboring crystal grains being oriented to form an oblique angle ranging from 0 to 4 degrees or 86 to 90 degrees. The film has a multilayer structure including a plurality of high-density magnetic field trap layers stacked in almost parallel to the substrate and a low-density magnetic field trap layer sandwiched therebetween. An average grain boundary width of the high-density trap layers in a cross-section horizontal to the substrate is 80 nm or less. The width is less than an average grain boundary width of the low-density trap layer in its cross-section horizontal to the substrate.
摘要翻译：公开了一种通过有效地引入钉扎中心来提高超导性能的氧化物超导体及其制造方法。超导体具有形成在基板上的高结晶度氧化物超导体膜，其中晶体的<001>方向几乎垂直于衬底取向，并且相邻晶粒的（100）面被定向以形成倾斜角度范围从0到4度或86到90度。膜具有多层结构，其包括与基板几乎平行堆叠的多个高密度磁场陷阱层和夹在其间的低密度磁场陷阱层。与衬底水平的横截面中的高密度陷阱层的平均晶界宽度为80nm以下。该宽度小于在垂直于衬底的横截面中的低密度陷阱层的平均晶界宽度。

6. 发明申请

US20090247413A1 OXIDE SUPERCONDUCTOR AND METHOD OF FABRICATING SAME 有权
标题翻译：氧化物超导体及其制造方法
公开(公告)号：US20090247413A1
公开(公告)日：2009-10-01
申请号：US12243087
申请日：2008-10-01
申请人： Mariko Hayashi , Takeshi Araki
发明人： Mariko Hayashi , Takeshi Araki
IPC分类号： H01L39/12 , H01L39/24
CPC分类号： H01L39/143 , H01L39/2425 , H01L39/2451
摘要： An oxide superconductor with superconduction properties being improved by effectively introducing a pinning center thereinto and its fabrication method are disclosed. The superconductor has a high-crystallinity oxide superconductor film which is formed on a substrate with a direction of crystal grain being oriented almost perpendicularly to the substrate and with (100) planes of neighboring crystal grains being oriented to form an oblique angle ranging from 0 to 4 degrees or 86 to 90 degrees. The film has a multilayer structure including a plurality of high-density magnetic field trap layers stacked in almost parallel to the substrate and a low-density magnetic field trap layer sandwiched therebetween. An average grain boundary width of the high-density trap layers in a cross-section horizontal to the substrate is 80 nm or less. The width is less than an average grain boundary width of the low-density trap layer in its cross-section horizontal to the substrate.
摘要翻译：公开了一种通过有效地引入钉扎中心来提高超导性能的氧化物超导体及其制造方法。超导体具有形成在基板上的高结晶度氧化物超导体膜，其中晶体的<001>方向几乎垂直于衬底取向，并且相邻晶粒的（100）面被定向以形成倾斜角度范围从0到4度或86到90度。膜具有多层结构，其包括与基板几乎平行堆叠的多个高密度磁场陷阱层和夹在其间的低密度磁场陷阱层。与衬底水平的横截面中的高密度陷阱层的平均晶界宽度为80nm以下。该宽度小于在垂直于衬底的横截面中的低密度陷阱层的平均晶界宽度。

7. 发明授权

US08416606B2 Information recording and reproducing device 有权
标题翻译：信息记录和再现装置
公开(公告)号：US08416606B2
公开(公告)日：2013-04-09
申请号：US13040823
申请日：2011-03-04
申请人： Takayuki Tsukamoto , Tsukasa Nakai , Chikayoshi Kamata , Mariko Hayashi , Fumihiko Aiga , Takeshi Yamaguchi
发明人： Takayuki Tsukamoto , Tsukasa Nakai , Chikayoshi Kamata , Mariko Hayashi , Fumihiko Aiga , Takeshi Yamaguchi
IPC分类号： G11C11/00
CPC分类号： G11B9/04 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C2213/51 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/126 , H01L45/147
摘要： According to one embodiment, an information recording and reproducing device includes a recording layer and a driving unit. The recording layer includes a first layer containing a first compound. The first compound includes a first positive ion element. The first positive ion element is made of a transition metal element and serves as a first positive ion. The second positive ion element serves as a second positive ion. The driving unit is configured to generate a phase change in the recording layer and to record information by at least one of application of a voltage and application of a current to the recording layer. The coordination number of the first positive ion element at a position of a second coordination of the second positive ion element is 80% or more and less than 100% of the coordination number when the first compound is assumed to be a perfect crystal.
摘要翻译：根据一个实施例，信息记录和再现装置包括记录层和驱动单元。记录层包括含有第一化合物的第一层。第一化合物包括第一正离子元素。第一正离子元件由过渡金属元素制成并用作第一正离子。第二正离子元素用作第二正离子。驱动单元被配置为在记录层中产生相变，并且通过施加电压和施加电流到记录层中的至少一个来记录信息。当假设第一化合物为完美晶体时，第二正离子元件的第二配位位置处的第一正离子元素的配位数为配位数的80％以上且小于配位数的100％。

8. 发明申请

US20110216582A1 INFORMATION RECORDING AND REPRODUCING DEVICE 有权
标题翻译：信息记录和复制设备
公开(公告)号：US20110216582A1
公开(公告)日：2011-09-08
申请号：US13040823
申请日：2011-03-04
申请人： Takayuki Tsukamoto , Tsukasa Nakai , Chikayoshi Kamata , Mariko Hayashi , Fumihiko Aiga , Takeshi Yamaguchi
发明人： Takayuki Tsukamoto , Tsukasa Nakai , Chikayoshi Kamata , Mariko Hayashi , Fumihiko Aiga , Takeshi Yamaguchi
IPC分类号： G11C11/21 , G11C11/34
CPC分类号： G11B9/04 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C2213/51 , G11C2213/56 , G11C2213/71 , G11C2213/72 , G11C2213/75 , G11C2213/79 , H01L27/101 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/126 , H01L45/147
摘要： According to one embodiment, an information recording and reproducing device includes a recording layer and a driving unit. The recording layer includes a first layer containing a first compound. The first compound includes a first positive ion element. The first positive ion element is made of a transition metal element and serves as a first positive ion. The second positive ion element serves as a second positive ion. The driving unit is configured to generate a phase change in the recording layer and to record information by at least one of application of a voltage and application of a current to the recording layer. The coordination number of the first positive ion element at a position of a second coordination of the second positive ion element is 80% or more and less than 100% of the coordination number when the first compound is assumed to be a perfect crystal.
摘要翻译：根据一个实施例，信息记录和再现装置包括记录层和驱动单元。记录层包括含有第一化合物的第一层。第一化合物包括第一正离子元素。第一正离子元件由过渡金属元素制成并用作第一正离子。第二正离子元素用作第二正离子。驱动单元被配置为在记录层中产生相变，并且通过施加电压和施加电流到记录层中的至少一个来记录信息。当假设第一化合物为完美晶体时，第二正离子元件的第二配位位置处的第一正离子元素的配位数为配位数的80％以上且小于配位数的100％。

9. 发明授权

US09046645B2 Antireflection film, method for producing antireflection film, polarizer and image display device 有权
标题翻译：防反射膜，防反射膜的制造方法，偏振片和图像显示装置
公开(公告)号：US09046645B2
公开(公告)日：2015-06-02
申请号：US13979572
申请日：2012-01-16
申请人： Mariko Hayashi , Tomoyuki Horio , Yoshihiro Nishimura , Yuya Inomata , Hiroshi Nakamura , Mayu Youki
发明人： Mariko Hayashi , Tomoyuki Horio , Yoshihiro Nishimura , Yuya Inomata , Hiroshi Nakamura , Mayu Youki
IPC分类号： G02B27/00 , G02B5/30 , C09K19/00 , C08J7/18 , G02F1/1335 , G02B1/04 , C08J5/24 , C03C21/00 , C08L63/00 , C08L1/10 , C08K5/523 , C08J5/18
CPC分类号： G02B1/111 , C03C21/002 , C08J5/18 , C08J5/24 , C08J2300/20 , C08J2333/08 , C08K5/523 , C08L1/10 , C08L63/00 , C08L2205/02 , G02B1/04 , G02B5/3033 , G02B5/305 , G02B27/0006 , G02F1/1335 , G02F1/133502
摘要： The claimed invention provides an antireflection film including a light-transmitting substrate, a hard coat layer, and a low-refractive-index layer, the hard coat layer and the low-refractive-index layer being formed on the light-transmitting substrate, the low-refractive-index layer including a (meth)acrylic resin, hollow silica particles, reactive silica particles, and two kinds of antifouling agents, the hollow silica particles having an average particle size of 40 to 80 nm and a blending ratio to the (meth)acrylic resin, represented by a ratio: Amount of hollow silica particles/Amount of (meth)acrylic resin, of 0.9 to 1.4, the amount of the reactive silica particles being 5 to 60 parts by mass based on 100 parts by mass of the (meth) acrylic resin, the antifouling agents including an antifouling agent that contains a fluorine compound and an antifouling agent that contains a fluoro-silicone compound.
摘要翻译：所要求保护的发明提供了一种抗反射膜，其包括透光基板，硬涂层和低折射率层，硬涂层和低折射率层形成在透光基板上，包含（甲基）丙烯酸树脂，中空二氧化硅颗粒，反应性二氧化硅颗粒和两种防污剂的低折射率层，平均粒径为40至80nm的中空二氧化硅颗粒和与（甲基）丙烯酸树脂，以中空二氧化硅颗粒的量/（甲基）丙烯酸树脂的量为0.9〜1.4，相对于100质量份的反应性二氧化硅颗粒的量为5〜60质量份（甲基）丙烯酸树脂，防污剂包括含氟化合物的防污剂和含氟硅氧烷化合物的防污剂。

10. 发明申请

US20090075074A1 OPTICAL LAYERED BODY, METHOD OF PRODUCING THE SAME, POLARIZER, AND IMAGE DISPLAY DEVICE 审中-公开
标题翻译：光学层状物体，其制造方法，偏振片和图像显示装置
公开(公告)号：US20090075074A1
公开(公告)日：2009-03-19
申请号：US12209366
申请日：2008-09-12
申请人： Tomoyuki Horio , Yukimitsu Iwata , Takashi Kodama , Mariko Hayashi , Kenji Ueno , Atsuhiro Kobayashi , Yoshimasa Ogawa , Yuichi Takaura , Junya Eguchi , Kiyotaka Matsui
发明人： Tomoyuki Horio , Yukimitsu Iwata , Takashi Kodama , Mariko Hayashi , Kenji Ueno , Atsuhiro Kobayashi , Yoshimasa Ogawa , Yuichi Takaura , Junya Eguchi , Kiyotaka Matsui
IPC分类号： B32B27/32 , G02B1/10 , B05D5/06
CPC分类号： G02B1/118 , C09D4/00 , G02B1/116 , G02B1/14 , G02B1/16 , G02B5/305 , Y10T428/273
摘要： It is an object of the present invention to provide an optical layered body which is produced at low cost and is superior in all an antistatic property, hardness and optical properties such as haze and a total light transmittance.An optical layered body comprising a light-transmitting substrate and a hard coat layer formed on the light-transmitting substrate, wherein the hard coat layer is a resin layer formed from a hard coat layer-forming composition containing a quaternary ammonium salt having a weight average molecular weight of 1000 to 50000, a tri- or morefunctional (meth)acrylate compound having a weight average molecular weight of 700 or less, and a permeable solvent; and a content of the quaternary ammonium salt in the hard coat layer is 0.5 to 18% by weight.
摘要翻译：本发明的目的是提供一种以低成本生产并且具有优异的抗静电性，硬度和光学特性如雾度和总透光率的光学层叠体。一种光学层叠体，其包含透光性基板和形成在透光性基板上的硬涂层，其中，所述硬涂层为由含有重均分子量的季铵盐的硬涂层形成组合物形成的树脂层分子量为1000〜50000，重均分子量为700以下的三官能或多官能（甲基）丙烯酸酯化合物和可渗透溶剂; 硬涂层中的季铵盐的含量为0.5〜18重量％。

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