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1. 发明申请

US20130251887A1 NANO-PATTERNING APPARATUS, SYSTEM HAVING THE SAME, AND CONTROL METHOD THEREOF 审中-公开
标题翻译：纳米图案装置，具有该装置的系统及其控制方法
公开(公告)号：US20130251887A1
公开(公告)日：2013-09-26
申请号：US13483606
申请日：2012-05-30
申请人： Seon Young Myoung , Young Ju Lee , Yun Bog Kim , Suk Jin Ham , Seong Chan Park , Hyun Jung Lee
发明人： Seon Young Myoung , Young Ju Lee , Yun Bog Kim , Suk Jin Ham , Seong Chan Park , Hyun Jung Lee
IPC分类号： B05C5/02 , B05D1/26
CPC分类号： B23K3/0623 , H05K3/1241 , H05K3/3484 , H05K2201/0257
摘要： Disclosed herein is a nano-patterning system including a nano-patterning apparatus. The nano-patterning apparatus includes: a holder unit including a transfer unit and an insulating unit; a tip unit inserted into the holder unit, downwardly protruded, and having a flow channel; a flow path having one end connected to the flow channel through one side of the transfer unit or the insulating unit and extending to the outside to serve as a movement path allowing a nano-patterning material to move therealong; a pressing unit pressing the nano-patterning material at one side of the flow path; and a storage unit connected to the other end of the flow path and storing the nano-patterning material.
摘要翻译：本文公开了包括纳米图案形成装置的纳米图案化系统。纳米图案形成装置包括：保持单元，包括转印单元和绝缘单元; 插入保持器单元中的尖端单元向下突出并具有流动通道; 流路，其一端通过传送单元或绝缘单元的一侧连接到流动通道，并延伸到外部，用作使纳米图案材料沿着其移动的移动路径; 按压单元，在所述流路的一侧按压所述纳米图案形成材料; 以及存储单元，连接到流路的另一端并存储纳米图案材料。

2. 发明申请

US20130248583A1 REFLOW INSPECTION SYSTEM AND CONTROL METHOD THEREOF 审中-公开
标题翻译：反射检查系统及其控制方法
公开(公告)号：US20130248583A1
公开(公告)日：2013-09-26
申请号：US13532482
申请日：2012-06-25
申请人： Yun Bog Kim , Young Ju Lee , Seon Young Myoung , Suk Jin Ham , Seong Chan Park , Hyun Jung Lee
发明人： Yun Bog Kim , Young Ju Lee , Seon Young Myoung , Suk Jin Ham , Seong Chan Park , Hyun Jung Lee
IPC分类号： B23K31/12 , H04N7/18
CPC分类号： B23K1/008 , B23K3/08 , H01L21/0273 , H05K3/3484 , H05K2203/043
摘要： Disclosed herein is a reflow inspection system. The reflow inspection system according to an embodiment of the present invention includes an oven, a stage on which a reflow inspection target is placed inside the oven, and which includes a temperature detecting sensor for detecting a temperature of the reflow inspection target formed on one side thereof; a light source unit formed on one side of the oven and irradiating the reflow inspection target with light, an imaging unit sucking smoke generated in the reflow inspection target, and obtaining image information of the reflow inspection target to thereby transmit the obtained image information to the outside, an image processing unit processing the image information obtained in the imaging unit, and a control unit connected to the stage, the temperature detecting sensor, and the image processing unit to perform control of a reflow inspection process.
摘要翻译：这里公开了回流检查系统。根据本发明实施例的回流检查系统包括炉子，在炉内放置回流检查对象的台，并且包括用于检测形成在一侧的回流检查对象的温度的温度检测传感器的; 光源单元，其形成在烤箱的一侧，用光照射回流检查对象;成像单元，吸入在回流检查对象物中产生的烟雾，得到回流检查对象的图像信息，从而将获得的图像信息发送到外部，处理在摄像单元中获得的图像信息的图像处理单元，以及与该台连接的控制单元，温度检测传感器和图像处理单元，以执行回流检查处理的控制。

3. 发明申请

US20130292457A1 SOLDER SHEET AND SMOLDERING METHOD USING THE SAME 审中-公开
标题翻译：使用该方法的焊接工艺和使用方法
公开(公告)号：US20130292457A1
公开(公告)日：2013-11-07
申请号：US13554006
申请日：2012-07-20
申请人： Hyun Jung Lee , Young Ju Lee , Yun Bog Kim , Seon Young Myoung , Suk Jin Ham , Seong Chan Park
发明人： Hyun Jung Lee , Young Ju Lee , Yun Bog Kim , Seon Young Myoung , Suk Jin Ham , Seong Chan Park
IPC分类号： B23K35/02 , B23K1/00
CPC分类号： B23K35/0244 , B23K3/0623 , B23K3/08 , B23K3/087 , B23K35/0222 , B23K35/0227 , Y10T428/24174
摘要： Disclosed herein are a solder sheet and a soldering method using the same. The solder sheet includes: a plurality of solder rods arranged to have a uniform height h and an area density N; and a support having an adhesive formed on one surface thereof and supporting the plurality of solder rods such that one end of each of the plurality of solder rods is attached to be perpendicular to the surface on which the adhesive is formed. Solder bumps can be formed on soldering portions of the substrate by using the solder sheet through a single process without a mask, and thus, the process can be simplified, costs can be reduced, and a defect rate can be lowered, thereby enhancing reliability.
摘要翻译：这里公开了一种焊料片和使用其的焊接方法。焊料片包括：多个焊料棒，其布置成具有均匀的高度h和面积密度N; 以及具有在其一个表面上形成的粘合剂并且支撑多个焊料棒的支撑件，使得多个焊料棒中的每一个的一端附接成垂直于其上形成有粘合剂的表面。可以通过在没有掩模的情况下通过单个工艺使用焊料片而在基板的焊接部分上形成焊料凸块，因此可以简化工艺，可以降低成本，并且可以降低缺陷率，从而提高可靠性。

4. 发明申请

US20100193828A1 LIGHT EMITTING DEVICE AND PACKAGE HAVING THE SAME 有权
标题翻译：发光装置和具有该发光装置的包装
公开(公告)号：US20100193828A1
公开(公告)日：2010-08-05
申请号：US12756824
申请日：2010-04-08
申请人： Pun Jae CHOI , Jin Hyun Lee , Si Hyuk Lee , Seon Young Myoung , Ki Yeol Park
发明人： Pun Jae CHOI , Jin Hyun Lee , Si Hyuk Lee , Seon Young Myoung , Ki Yeol Park
IPC分类号： H01L33/62
CPC分类号： H01L33/382 , H01L33/0079 , H01L33/08 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/01079 , H01L2924/00014 , H01L2924/00
摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.
摘要翻译：提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产。根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

5. 发明授权

US09018666B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US09018666B2
公开(公告)日：2015-04-28
申请号：US12728853
申请日：2010-03-22
申请人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
发明人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
IPC分类号： H01L33/00 , H01L33/38 , H01L33/20
CPC分类号： H01L33/382 , H01L33/20
摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
摘要翻译：提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

6. 发明授权

US07786498B2 Light emitting device and package having the same 有权
标题翻译：发光器件和封装具有相同的功能
公开(公告)号：US07786498B2
公开(公告)日：2010-08-31
申请号：US12071980
申请日：2008-02-28
申请人： Pun Jae Choi , Jin Hyun Lee , Si Hyuk Lee , Seon Young Myoung , Ki Yeol Park
发明人： Pun Jae Choi , Jin Hyun Lee , Si Hyuk Lee , Seon Young Myoung , Ki Yeol Park
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/0079 , H01L33/08 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/01079 , H01L2924/00014 , H01L2924/00
摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.
摘要翻译：提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产。根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

7. 发明申请

US20080191215A1 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US20080191215A1
公开(公告)日：2008-08-14
申请号：US12003886
申请日：2008-01-03
申请人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
发明人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20
摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
摘要翻译：提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

8. 发明授权

US08847266B2 Semiconductor light emitting device 有权
标题翻译：半导体发光器件
公开(公告)号：US08847266B2
公开(公告)日：2014-09-30
申请号：US12003886
申请日：2008-01-03
申请人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
发明人： Pun Jae Choi , Ki Yeol Park , Sang Bum Lee , Seon Young Myoung , Myong Soo Cho
IPC分类号： H01L33/00 , H01L33/38 , H01L33/20
CPC分类号： H01L33/382 , H01L33/20
摘要： There is provided a semiconductor light emitting device that minimizes reflection or absorption of emitted light, maximizes luminous efficiency with the maximum light emitting area, enables uniform current spreading with a small area electrode, and enables mass production with high reliability and high quality. A semiconductor light emitting device according to an aspect of the invention includes first and second conductivity type semiconductor layers, an active layer formed therebetween, first electrode layer, and a second electrode part electrically connecting the semiconductor layers. The second electrode part includes an electrode pad unit, an electrode extending unit, and an electrode connecting unit connecting the electrode pad unit and electrode extending unit.
摘要翻译：提供了一种半导体发光器件，其使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，能够利用小面积电极均匀地传播电流，并且能够以高可靠性和高质量进行批量生产。根据本发明的一个方面的半导体发光器件包括第一和第二导电类型半导体层，其间形成的有源层，第一电极层和电连接半导体层的第二电极部分。第二电极部分包括电极焊盘单元，电极延伸单元和连接电极焊盘单元和电极延伸单元的电极连接单元。

9. 发明申请

US20080237622A1 Light emitting device and package having the same 有权
标题翻译：发光器件和封装具有相同的功能
公开(公告)号：US20080237622A1
公开(公告)日：2008-10-02
申请号：US12071980
申请日：2008-02-28
申请人： Pun Jae Choi , Jin Hyun Lee , Si Hyuk Lee , Seon Young Myoung , Ki Yeol Park
发明人： Pun Jae Choi , Jin Hyun Lee , Si Hyuk Lee , Seon Young Myoung , Ki Yeol Park
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/0079 , H01L33/08 , H01L33/62 , H01L2224/32225 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/73265 , H01L2924/01079 , H01L2924/00014 , H01L2924/00
摘要： There is provided a light emitting device that can minimize reflection or absorption of emitted light, maximize luminous efficiency with the maximum light emitting area, enable uniform current spreading with a small area electrode, and enable mass production at low cost with high reliability and high quality. A light emitting device according to an aspect of the invention includes a light emitting lamination including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer, and a conductive substrate at one surface thereof. Here, the light emitting device includes a barrier unit separating the light emitting lamination into a plurality of light emitting regions, a first electrode structure, and a second electrode structure. The first electrode structure includes a bonding unit, contact holes, and a wiring unit connecting the bonding unit to the contact holes.
摘要翻译：提供一种发光装置，其能够使发射光的反射或吸收最小化，以最大发光面积最大化发光效率，实现与小面积电极的均匀电流扩散，并且以低成本，高可靠性和高质量实现批量生产。根据本发明的一个方面的发光器件包括在其一个表面上包括第一导电类型半导体层，第二导电类型半导体层和有源层的发光层叠体和导电性基板。这里，发光器件包括将发光层压分离成多个发光区域的阻挡单元，第一电极结构和第二电极结构。第一电极结构包括接合单元，接触孔和将接合单元连接到接触孔的接线单元。

10. 发明申请

US20080035951A1 Selective growth method, nitride semiconductor light emitting device and manufacturing method of the same 有权
标题翻译：选择性生长方法，氮化物半导体发光器件及其制造方法
公开(公告)号：US20080035951A1
公开(公告)日：2008-02-14
申请号：US11822185
申请日：2007-07-03
申请人： Hee Seok Park , Gil Han Park , Sang Duk Yoo , Young Min Park , Hak Hwan Kim , Seon Young Myoung , Sang Bum Lee , Ki Tae Park , Myoung Sik Jung , Kyeong Ik Min
发明人： Hee Seok Park , Gil Han Park , Sang Duk Yoo , Young Min Park , Hak Hwan Kim , Seon Young Myoung , Sang Bum Lee , Ki Tae Park , Myoung Sik Jung , Kyeong Ik Min
IPC分类号： H01L29/24 , H01L21/36 , H01L33/00
CPC分类号： C30B25/04 , C30B25/02 , C30B29/406 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02647 , H01L33/007 , H01L33/24
摘要： A method for selectively growing a nitride semiconductor, in which a mask is formed, with an opening formed therein, on a nitride semiconductor layer. A nitride semiconductor crystal is selectively grown on a portion of the nitride semiconductor layer exposed through the opening in the mask, the nitride semiconductor crystal shaped as a hexagonal pyramid and having crystal planes inclined with respect to a top surface of the nitride semiconductor. Here, the nitride semiconductor crystal has at least one intermediate stress-relieving area having crystal planes inclined at a greater angle than those of upper and lower areas of the nitride semiconductor crystal, the intermediate stress-relieving area relieving stress which occurs from continuity in the inclined crystal planes.
摘要翻译：一种在氮化物半导体层上选择性地生长其中形成掩模的氮化物半导体，其中形成有开口的方法。氮化物半导体晶体选择性地生长在通过掩模中的开口暴露的氮化物半导体层的一部分上，氮化物半导体晶体形状为六角锥，并具有相对于氮化物半导体的顶表面倾斜的晶面。这里，氮化物半导体晶体具有至少一个具有比氮化物半导体晶体的上部和下部区域倾斜角度大的晶面的中间应力消除区域，由中间应力消除区域的连续性产生的中间应力消除面积减轻应力斜晶面。

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