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1. 发明授权

US11821088B2 Multi zone spot heating in EPI 有权
公开(公告)号：US11821088B2
公开(公告)日：2023-11-21
申请号：US17331401
申请日：2021-05-26
申请人： Applied Materials, Inc.
发明人： Shu-Kwan Lau , Koji Nakanishi , Toshiyuki Nakagawa , Zuoming Zhu , Zhiyuan Ye , Joseph M. Ranish , Nyi O. Myo , Errol Antonio C. Sanchez , Schubert S. Chu
IPC分类号： C23C16/46 , H01L21/67 , H01L21/687 , B23K26/00 , B23K26/12 , B23K26/06 , B23K26/03 , B23K26/08 , C23C16/52 , B23K26/352
CPC分类号： C23C16/46 , B23K26/0006 , B23K26/032 , B23K26/034 , B23K26/0604 , B23K26/08 , B23K26/123 , B23K26/126 , B23K26/127 , B23K26/128 , B23K26/352 , C23C16/52 , H01L21/6719 , H01L21/67115 , H01L21/67248 , H01L21/68742 , H01L21/68764 , H01L21/68785 , H01L21/68757
摘要： Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

2. 发明授权

US11691219B2 Laser machining method for cutting workpiece 有权
公开(公告)号：US11691219B2
公开(公告)日：2023-07-04
申请号：US16811279
申请日：2020-03-06
申请人： Fanuc Corporation
发明人： Ryousuke Nakamura
IPC分类号： B23K26/14 , B23K26/12 , B23K26/70 , B23K26/064 , B23K26/38
CPC分类号： B23K26/126 , B23K26/064 , B23K26/38 , B23K26/702
摘要： A laser machining method able to effectively satisfy cutting quality required on one side of a cutting spot of a workpiece. A laser machining method for cutting a workpiece W by using a machining head able to emit a laser beam and an assist gas coaxially and non-coaxially includes: preparing a machining program specifying, for the workpiece W, a cutting line, and a first region and a second region on both sides of the cutting line where cutting quality requirements are different; and maintaining a state in which a center axis of the assist gas is shifted from an optical axis of the laser beam toward the first region in response to the difference in the cutting quality requirements during the cutting between the first region and the second region along the cutting line in accordance with the machining program.

3. 发明授权

US09911616B2 Process for treating a structure 有权
公开(公告)号：US09911616B2
公开(公告)日：2018-03-06
申请号：US14770378
申请日：2014-02-25
申请人： Soitec
发明人： Oleg Kononchuk
IPC分类号： H01L21/3065 , H01L21/02 , B23K26/12 , H05K3/00 , H01L21/268 , H01L21/302
CPC分类号： H01L21/3065 , B23K26/126 , H01L21/02488 , H01L21/0262 , H01L21/02664 , H01L21/02675 , H01L21/02686 , H01L21/268 , H01L21/302 , H05K3/0026
摘要： The disclosure relates to a process for treating a structure, the structure comprising, from its back side to its front side, a carrier substrate, an insulating layer and a useful layer, the useful layer having a free surface, the structure being placed in an atmosphere containing chemical species, the chemical species being capable of reacting chemically with the useful layer. This treatment process is noteworthy in that the useful layer is heated by a pulsed laser beam, the beam sweeping the free surface, the wavelength of the beam differing by, at most, plus or minus 15 nm from a central wavelength, the central wavelength being chosen so that the sensitivity of the reflectivity of the structure relative to the insulating layer is zero.

4. 发明申请

US20170278710A1 Method of Manufacturing Semiconductor Device 审中-公开
公开(公告)号：US20170278710A1
公开(公告)日：2017-09-28
申请号：US15411298
申请日：2017-01-20
申请人： Samsung Electronics Co., Ltd.
发明人： Yong Seung Moon , Byung Gook Kim , Jae Hyuck Choi , Sung Won Kwon
IPC分类号： H01L21/033
CPC分类号： H01L21/0338 , B23K26/126 , B23K26/362 , B29C59/14 , B29C59/16 , B29C2791/009 , G03F1/80 , G03F7/0041 , H01L21/02675 , H01L21/0274 , H01L21/0332 , H01L21/0335 , H01L21/0337 , H01L21/304 , H01L21/30621 , H01L21/31138
摘要： Provided is a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes forming a target etching layer on a substrate, patterning the target etching layer to form a pattern layer including a pattern portion having a first height and a first width and a recess portion having a second width, providing a first gas and a second gas on the pattern layer, and performing a reaction process including reacting the first and second gases with a surface of the pattern portion by irradiating a laser beam on the pattern layer. The performing the reaction process includes removing a portion of sidewalls of the pattern portion so that the pattern portion has a third width that is smaller than the first width.

5. 发明申请

US20160325358A1 CONDITIONING ONE OR MORE ADDITIVE MANUFACTURED OBJECTS 审中-公开
标题翻译：调节一个或多个添加剂制造的对象
公开(公告)号：US20160325358A1
公开(公告)日：2016-11-10
申请号：US15111378
申请日：2015-01-22
申请人： UNITED TECHNOLOGIES CORPORATION
发明人： Aaron T. Nardi , Zissis Dardas
IPC分类号： B22F3/24 , C23C8/24 , C23C8/08 , B22F3/105 , B23K15/00 , B23K26/00 , B23K26/342 , B23K26/16 , B23K26/70 , B23K26/12 , B33Y10/00 , B33Y30/00 , B33Y40/00 , B28B1/00 , C23C8/02
CPC分类号： B22F3/24 , B22F3/1055 , B22F7/06 , B22F7/08 , B22F2003/1059 , B22F2003/242 , B22F2003/248 , B22F2201/00 , B22F2201/20 , B22F2201/40 , B22F2998/10 , B23K15/0026 , B23K15/0086 , B23K15/0093 , B23K26/0006 , B23K26/1224 , B23K26/126 , B23K26/16 , B23K26/342 , B23K26/702 , B28B1/001 , B33Y10/00 , B33Y30/00 , B33Y40/00 , C23C8/02 , C23C8/08 , C23C8/24 , Y02P10/295
摘要： A manufacturing process is provided. During this process, material is solidified together within a chamber to form an object using an additive manufacturing device. At least a portion of the solidified material is conditioned within the chamber using a material conditioning device.
摘要翻译：提供制造工艺。在该过程中，材料在室内一起固化，以使用添加剂制造装置形成物体。使用材料调节装置在室内调节至少一部分固化的材料。

6. 发明申请

US20160201184A1 MODIFYING THE SURFACE CHEMISTRY OF A MATERIAL 审中-公开
标题翻译：修改材料的表面化学
公开(公告)号：US20160201184A1
公开(公告)日：2016-07-14
申请号：US15077352
申请日：2016-03-22
申请人： The United States of America as represented by the Secretary of the Navy
发明人： Steven Seghi , Jason Kalishek
IPC分类号： C23C8/26 , B23K26/00 , B23K26/352 , C23C8/24
CPC分类号： B23K26/0624 , B23K26/0006 , B23K26/123 , B23K26/126 , B23K26/14 , B23K26/355 , B23K2103/00 , B23K2103/04 , B23K2103/08 , B23K2103/10 , B23K2103/12 , B23K2103/14 , B23K2103/16 , B23K2103/42 , B23K2103/50 , B23K2103/52 , B23K2103/54 , B23K2103/56
摘要： Embodiments disclosed herein generally relate to modifying a material's surface chemistry and surface profile using a pulsed laser. In embodiments, a system comprises: a material, the material including a surface portion having a surface chemistry; an enclosure, the enclosure containing a gaseous mixture having a non-atmospheric composition; and a pulsed laser configured to emit at least one laser pulse, the at least one laser pulse being directed to pass through the gaseous mixture onto the surface portion thereby modifying the surface chemistry of the surface portion.
摘要翻译：本文公开的实施方案通常涉及使用脉冲激光来改变材料的表面化学性质和表面轮廓。在实施例中，系统包括：材料，所述材料包括具有表面化学性质的表面部分; 外壳，外壳包含具有非大气成分的气体混合物; 以及被配置为发射至少一个激光脉冲的脉冲激光，所述至少一个激光脉冲被引导通过所述气体混合物到所述表面部分上，从而改变所述表面部分的表面化学性质。

7. 发明授权

US09352417B2 Increasing die strength by etching during or after dicing 有权
标题翻译：在切割期间或之后通过蚀刻增加模具强度
公开(公告)号：US09352417B2
公开(公告)日：2016-05-31
申请号：US14029664
申请日：2013-09-17
申请人： Electro Scientific Industries, Inc.
发明人： Adrian Boyle , Oonagh Meighan
IPC分类号： H01L21/78 , B23K26/12 , B23K26/06 , B23K26/40
CPC分类号： B23K26/126 , B23K26/0648 , B23K26/123 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/78
摘要： A substrate is diced using a program-controlled pulsed laser beam apparatus having an associated memory for storing a laser cutting strategy file. The file contains selected combinations of pulse rate Δt, pulse energy density E and pulse spatial overlap to machine a single layer or different types of material in different layers of the substrate while restricting damage to the layers and maximizing machining rate to produce die having predetermined die strength and yield. The file also contains data relating to the number of scans necessary using a selected combination to cut through a corresponding layer. The substrate is diced using the selected combinations. Gas handling equipment for inert or active gas may be provided for preventing or inducing chemical reactions at the substrate prior to, during or after dicing.
摘要翻译：使用具有用于存储激光切割策略文件的相关联存储器的程序控制的脉冲激光束装置对基板进行切割。该文件包含脉冲频率和Dgr; t，脉冲能量密度E和脉冲空间重叠的选择组合，以在衬底的不同层中加工单层或不同类型的材料，同时限制对层的损伤并最大化加工速率以产生具有预定的模具强度和产量。该文件还包含有关使用所选组合切割相应层所需的扫描数量的数据。使用所选择的组合对基底进行切割。可以提供用于惰性或活性气体的气体处理设备，用于在切割之前，期间或之后防止或引起基材上的化学反应。

8. 发明申请

US20140231393A1 PROGRAM CONTROLLED DICING OF A SUBSTRATE USING A PULSED LASER BEAM 审中-公开
标题翻译：使用脉冲激光束对基板进行程序控制
公开(公告)号：US20140231393A1
公开(公告)日：2014-08-21
申请号：US14029664
申请日：2013-09-17
申请人： Electro Scientific Industries, Inc.
发明人： Adrian Boyle , Oonagh Meighan
IPC分类号： H01L21/78 , B23K26/12
CPC分类号： B23K26/126 , B23K26/0648 , B23K26/123 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/78
摘要： A substrate is diced using a program-controlled pulsed laser beam apparatus having an associated memory for storing a laser cutting strategy file. The file contains selected combinations of pulse rate Δt, pulse energy density E and pulse spatial overlap to machine a single layer or different types of material in different layers of the substrate while restricting damage to the layers and maximising machining rate to produce die having predetermined die strength and yield. The file also contains data relating to the number of scans necessary using a selected combination to cut through a corresponding layer. The substrate is diced using the selected combinations. Gas handling equipment for inert or active gas may be provided for preventing or inducing chemical reactions at the substrate prior to, during or after dicing.
摘要翻译：使用具有用于存储激光切割策略文件的相关联存储器的程序控制的脉冲激光束装置对基板进行切割。该文件包含脉冲频率和Dgr; t，脉冲能量密度E和脉冲空间重叠的选择组合，以在衬底的不同层中加工单层或不同类型的材料，同时限制对层的损伤并最大化加工速率以产生具有预定的模具强度和产量。该文件还包含有关使用所选组合切割相应层所需的扫描数量的数据。使用所选择的组合对基底进行切割。可以提供用于惰性或活性气体的气体处理设备，用于在切割之前，期间或之后防止或引起基材上的化学反应。

9. 发明申请

US20130210245A1 INTERPOSER AND METHOD FOR PRODUCING HOLES IN AN INTERPOSER 审中-公开
标题翻译：插入器和在插入器中产生孔的方法
公开(公告)号：US20130210245A1
公开(公告)日：2013-08-15
申请号：US13807386
申请日：2011-07-04
申请人： Oliver Jackl
发明人： Oliver Jackl
IPC分类号： H05K1/11 , B23K26/38
CPC分类号： H05K1/115 , B23K26/0093 , B23K26/0622 , B23K26/126 , B23K26/14 , B23K26/38 , B23K26/382 , B23K26/384 , B23K26/40 , B23K2101/40 , B23K2103/42 , B23K2103/50 , H01L21/486 , H01L23/15 , H01L23/49827 , H01L2924/0002 , H05K1/0306 , H05K3/0017 , H05K3/0029 , H05K2201/10378 , H05K2203/087 , H01L2924/00
摘要： An interposer for electrical connection between a CPU chip and a circuit board is provided. The interposer includes a board-shaped base substrate made of glass having a coefficient of thermal expansion ranging from 3.1×10−6/K to 3.4×10−6/K. The interposer further includes a number of holes having diameters ranging from 20 μm to 200 μm. The number of holes ranging from 10 to 10,000 per square centimeter. Conductive paths running on one surface of the board extend right into respective holes and therethrough to the other surface of the board in order to form connection points for the chip.
摘要翻译：提供了用于CPU芯片和电路板之间的电连接的插入器。插入件包括热膨胀系数为3.1×10 -6 / K〜3.4×10 -6 / K的玻璃制板状基板。插入件还包括直径范围从20m到200um的多个孔。孔数从10到10,000平方厘米。在板的一个表面上延伸的导电路径直接延伸到相应的孔中并穿过其延伸到板的另一个表面，以形成用于芯片的连接点。

10. 发明申请

US20100301013A1 METHOD FOR LASER ABLATION 审中-公开
标题翻译：激光雷射的方法
公开(公告)号：US20100301013A1
公开(公告)日：2010-12-02
申请号：US12780272
申请日：2010-05-14
申请人： Alan Conneely , Helen Howard , Gerard O'Connor , Sedao , Natalie Haustrup
发明人： Alan Conneely , Helen Howard , Gerard O'Connor , Sedao , Natalie Haustrup
IPC分类号： C23F1/02 , B29B9/00 , B29C35/08 , B05D7/00
CPC分类号： B23K26/36 , B23K26/032 , B23K26/12 , B23K26/125 , B23K26/126 , B23K26/127 , B23K26/14 , B23K26/142 , B23K26/1437 , B23K26/1438
摘要： The present invention relates to a method for laser ablation. The method comprises providing a substrate from which material is to be ablated and providing an ambient environment for the laser ablation process, comprising supplying a prescribed assist gas in a prescribed delivery configuration. The method further comprises focusing a laser beam onto the substrate to be ablated at a power density above an ablation threshold of the material to remove material from the substrate in a laser material interaction zone at or adjacent to the focal point of the laser; and controlling the supply of the assist gas and the laser power to generate a liquid phase in the laser material interaction zone in which the ablated matter is suspended.
摘要翻译：本发明涉及一种激光烧蚀的方法。该方法包括提供一种待消融材料的衬底并为激光烧蚀过程提供周围环境，包括以规定的传送配置提供规定的辅助气体。该方法还包括将激光束聚焦到待消融的功率密度上的功率密度高于材料的消融阈值，以在激光器的焦点处或邻近的激光材料相互作用区域中从衬底移除材料; 并且控制辅助气体的供给和激光功率，以在消融物悬浮的激光材料相互作用区域中产生液相。

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