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1. 发明申请

US20170229589A1 TUNNELING DIODE USING GRAPHENE-SILICON QUANTUM DOT HYBRID STRUCTURE AND METHOD OF MANUFACTURING THE SAME 有权
公开(公告)号：US20170229589A1
公开(公告)日：2017-08-10
申请号：US15501514
申请日：2014-10-14
申请人： UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
发明人： Suk Ho CHOI , Dong Hee SHIN , Sung KIM
IPC分类号： H01L29/88 , H01L31/18 , H01L29/15 , H01L31/0352 , C01B33/023 , H01L29/16
CPC分类号： H01L29/88 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B31/0453 , C01B32/182 , C01B32/186 , C01B33/023 , C01B2204/22 , C01P2006/40 , H01L29/0665 , H01L29/127 , H01L29/15 , H01L29/1606 , H01L29/66151 , H01L31/035218 , H01L31/1804 , H01L33/06 , Y10S977/734 , Y10S977/774 , Y10S977/814 , Y10S977/843 , Y10S977/896 , Y10S977/932
摘要： Disclosed is a tunneling diode, which includes a graphene-silicon quantum dot hybrid structure, having improved performance and electrical characteristics by controlling the sizes of silicon quantum dots and the doping concentration of graphene. The ideal tunneling diode of the present disclosure may be utilized in diode-based optoelectronic devices.

2. 发明授权

US09359211B2 Methods of fabricating graphene using alloy catalyst 有权
标题翻译：使用合金催化剂制造石墨烯的方法
公开(公告)号：US09359211B2
公开(公告)日：2016-06-07
申请号：US12805084
申请日：2010-07-12
申请人： Yun-sung Woo , David Seo , Sun-ae Seo , Hyun-jong Chung , Sae-ra Kang , Jin-seong Heo
发明人： Yun-sung Woo , David Seo , Sun-ae Seo , Hyun-jong Chung , Sae-ra Kang , Jin-seong Heo
IPC分类号： C01B31/04 , B82Y30/00 , B82Y40/00 , C23C16/02 , C23C16/26 , B01J23/755 , B01J37/34
CPC分类号： C01B31/0453 , B01J23/755 , B01J37/347 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B2204/04 , C23C16/0281 , C23C16/26
摘要： Methods of fabricating graphene using an alloy catalyst may include forming an alloy catalyst layer including nickel on a substrate and forming a graphene layer by supplying hydrocarbon gas onto the alloy catalyst layer. The alloy catalyst layer may include nickel and at least one selected from the group consisting of copper, platinum, iron and gold. When the graphene is fabricated, a catalyst metal that reduces solubility of carbon in Ni may be used together with Ni in the alloy catalyst layer. An amount of carbon that is dissolved may be adjusted and a uniform graphene monolayer may be fabricated.
摘要翻译：使用合金催化剂制造石墨烯的方法可以包括在基板上形成包含镍的合金催化剂层，并通过向合金催化剂层供给烃气体来形成石墨烯层。合金催化剂层可以包括镍和选自铜，铂，铁和金中的至少一种。当制造石墨烯时，可以在合金催化剂层中与Ni一起使用降低碳在Ni中的溶解度的催化剂金属。可以调节溶解的碳的量，并且可以制造均匀的石墨烯单层。

3. 发明授权

US09278863B2 Method for manufacturing graphene quantum dot using thermal plasma 有权
标题翻译：使用热等离子体制造石墨烯量子点的方法
公开(公告)号：US09278863B2
公开(公告)日：2016-03-08
申请号：US14557745
申请日：2014-12-02
申请人： SNU R&DB FOUNDATION
发明人： Jung Sang Suh , Ju Han Kim
IPC分类号： B82Y40/00 , B82Y15/00 , C01B31/04 , H01L21/02
CPC分类号： C01B31/0453 , C01B32/186 , C01B2204/20 , H01L21/02527 , H01L21/02601 , H01L21/02628
摘要： The present application provides a method for producing a graphene quantum dot using thermal plasma, comprising injecting a carbon source into a thermal plasma jet to pyrolyze the carbon source so as to form a carbon atomic beam and allowing the carbon atomic beam to flow in a tube connected to an anode to produce a graphene quantum dot.
摘要翻译：本申请提供了一种使用热等离子体生产石墨烯量子点的方法，包括将碳源注入热等离子体射流中以热解碳源以形成碳原子束并允许碳原子束在管中流动连接到阳极以产生石墨烯量子点。

4. 发明授权

US09260309B2 Method and apparatus for manufacturing graphene 有权
标题翻译：制造石墨烯的方法和装置
公开(公告)号：US09260309B2
公开(公告)日：2016-02-16
申请号：US13982880
申请日：2012-01-30
申请人： Young-Il Song , Hyeong-Keun Kim , Byung-Hee Hong , Jong-Hyun Ahn
发明人： Young-Il Song , Hyeong-Keun Kim , Byung-Hee Hong , Jong-Hyun Ahn
IPC分类号： C01B31/04 , C23C16/26 , C23C16/458 , C23C16/54 , B82Y30/00 , B82Y40/00
CPC分类号： C01B31/0453 , B82Y30/00 , B82Y40/00 , C01B32/186 , C23C16/26 , C23C16/4582 , C23C16/545
摘要： A method and an apparatus for synthesizing graphene. The method includes loading catalyst metals into a chamber in the horizontal direction or the vertical direction; increasing sizes of grains of the catalyst metals by heating the catalyst metals; raising a temperature inside the chamber while providing a vapor carbon source in the catalyst metals; and forming graphene by cooling the catalyst metals.
摘要翻译：一种用于合成石墨烯的方法和装置。该方法包括将催化剂金属在水平方向或垂直方向上装入室内; 通过加热催化剂金属来增加催化剂金属颗粒的尺寸; 提高室内的温度，同时在催化剂金属中提供蒸汽碳源; 并通过冷却催化剂金属形成石墨烯。

5. 发明授权

US09255007B2 Copper foil for producing graphene and method of producing graphene using the same 有权
标题翻译：用于生产石墨烯的铜箔和使用其制造石墨烯的方法
公开(公告)号：US09255007B2
公开(公告)日：2016-02-09
申请号：US14122930
申请日：2012-05-31
申请人： Yoshihiro Chiba , Tatsuya Yamaji
发明人： Yoshihiro Chiba , Tatsuya Yamaji
IPC分类号： C01B31/04 , C01B31/02 , B82Y30/00 , B82Y40/00 , B01J23/72 , B21B1/00 , B32B15/20 , C22C9/00 , C22C9/02 , C22F1/08 , B01J37/18 , B01J27/04 , B01J37/00
CPC分类号： C01B31/0453 , B01J23/72 , B01J27/04 , B01J37/0009 , B01J37/0081 , B01J37/18 , B82Y30/00 , B82Y40/00 , C01B32/186 , C22C9/00 , C22C9/02 , C22F1/08 , Y10T428/12431
摘要： A copper foil for producing graphene, including oxides and sulfides each having a diameter of 0.5 μm or more having a total number of 15/mm2 or less measured by using a scanning electronic microscope before heating at 1000° C. for 1 hour in an atmosphere containing 20% by volume or more of hydrogen and balance argon.
摘要翻译：一种用于生产石墨烯的铜箔，包括氧化物和硫化物，其直径为0.5μm或更大，其总共数为15 / mm 2或更小，通过使用扫描电子显微镜在1000℃加热1小时含有20体积％以上的氢气和氩气平衡。

6. 发明申请

US20140044885A1 METHOD AND SYSTEM FOR GRAPHENE FORMATION 有权
标题翻译：用于石墨形成的方法和系统
公开(公告)号：US20140044885A1
公开(公告)日：2014-02-13
申请号：US13774188
申请日：2013-02-22
申请人： California Institute of Technology
发明人： David A. Boyd
IPC分类号： C01B31/04
CPC分类号： C01B31/0453 , B01J19/088 , B01J19/22 , B01J2219/0879 , B01J2219/0894 , B82Y30/00 , B82Y40/00 , C01B32/186 , C23C16/0245 , C23C16/26 , C23C16/52 , C23C16/545 , H01J37/32082 , H01J37/32449 , H01J37/32522 , H01J37/32816 , H01J2237/335 , H01L21/02046 , H01L21/02425 , H01L21/02527 , H01L21/0262 , H01L21/02661 , H01L29/1606 , H01L29/32
摘要： A method for forming graphene includes providing a substrate and subjecting the substrate to a reduced pressure environment. The method also includes providing a carrier gas and a carbon source and exposing at least a portion of the substrate to the carrier gas and the carbon source. The method further includes performing a surface treatment process on the at least a portion of the substrate and converting a portion of the carbon source to graphene disposed on the at least a portion of the substrate.
摘要翻译：一种用于形成石墨烯的方法包括提供基底并使基底经历减压环境。该方法还包括提供载气和碳源，并将基底的至少一部分暴露于载气和碳源。所述方法还包括对所述基底的所述至少一部分进行表面处理过程，并将所述碳源的一部分转化为设置在所述基底的所述至少一部分上的石墨烯。

7. 发明授权

US08609458B2 Method for producing graphene oxide with tunable gap 有权
标题翻译：用可调节间隙生产氧化石墨烯的方法
公开(公告)号：US08609458B2
公开(公告)日：2013-12-17
申请号：US13316771
申请日：2011-12-12
申请人： Morteza Gharib , Adrianus Indrat Aria , Adi Wijaya Gani
发明人： Morteza Gharib , Adrianus Indrat Aria , Adi Wijaya Gani
IPC分类号： H01L51/40 , H01L29/08
CPC分类号： H01L29/24 , B82Y30/00 , B82Y40/00 , C01B31/043 , C01B31/0453 , C01B31/0484 , C01B32/186 , C01B32/194 , C01B32/23 , H01L21/02527 , H01L21/02614 , Y10S977/734 , Y10S977/843 , Y10S977/847 , Y10S977/932
摘要： A method of fabricating a graphene oxide material in which oxidation is confined within the graphene layer and that possesses a desired band gap is provided. The method allows specific band gap values to be developed. Additionally, the use of masks is consistent with the method, so intricate configurations can be achieved. The resulting graphene oxide material is thus completely customizable and can be adapted to a plethora of useful engineering applications.
摘要翻译：提供了一种制造石墨烯氧化物材料的方法，其中氧化被限制在石墨烯层内并且具有期望的带隙。该方法允许开发特定的带隙值。另外，掩模的使用与该方法一致，因此可以实现复杂的配置。所得到的氧化石墨烯材料因此是完全可定制的，并且可以适应于大量有用的工程应用。

8. 发明授权

US09725625B2 Conductive adhesive with spherical graphene and manufacturing method thereof 有权
公开(公告)号：US09725625B2
公开(公告)日：2017-08-08
申请号：US14398978
申请日：2014-08-14
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Yungjui Lee , Xia Zhang , Ji Li , Yahui Chen
IPC分类号： C01B31/04 , H01B1/24 , B82Y30/00 , C09J163/00 , C09J9/02 , B01J2/00 , B01J2/06 , C23C16/02 , C23C16/26 , C23C16/44 , C23C16/48
CPC分类号： C09J9/02 , B01J2/003 , B01J2/06 , C01B31/0453 , C01B32/186 , C01B32/194 , C01P2004/32 , C08K3/042 , C08K9/12 , C08K2201/001 , C09J163/00 , C23C16/0209 , C23C16/0245 , C23C16/26 , C23C16/4417 , C23C16/481 , H01B1/24
摘要： The invention provide a manufacturing method for producing conductive adhesive with spherical graphene, and the steps comprise as following: step 1: preparing monomer, initiator, a dispersing agent and solvent to manufacture a monomer compound, and use the monomer compound to produce polymer micro ball; step 2: heating pre-treatment or plasma etching pre-treatment to the said polymer micro ball; step 3: by chemical vapor deposition, the polymer micro ball after pre-treatment from step 2 to grow graphene outside surfaces or inside polymer micro ball, and then obtain the spherical graphene; step 4: producing epoxy gel system made by epoxy, hardener and accelerant with a certain ratio mixing homogeneously; step 5: dispersing the spherical graphene from step 3 into the epoxy gel system to produce pre-material of conductive adhesive of spherical graphene; Step 6: deforming the pre-material of conductive adhesive of spherical graphene, and then obtain conductive adhesive of spherical graphene.

9. 发明授权

US09593019B2 Methods for low-temperature graphene precipitation onto glass, and associated articles/devices 有权
标题翻译：低温石墨烯沉淀在玻璃上的方法以及相关的制品/装置
公开(公告)号：US09593019B2
公开(公告)日：2017-03-14
申请号：US14145626
申请日：2013-12-31
申请人： Guardian Industries Corp.
发明人： Vijayen S. Veerasamy
IPC分类号： B29C65/02 , B32B37/28 , B32B38/10 , B32B43/00 , C01B31/04 , H01B13/00 , B82Y30/00 , B82Y40/00 , C23C16/02 , C23C16/26 , C23C26/00
CPC分类号： C01B31/0453 , B82Y30/00 , B82Y40/00 , C01B32/186 , C23C16/0281 , C23C16/26 , C23C26/00 , H01B13/0026 , Y10T29/49002 , Y10T156/10
摘要： Certain example embodiments relate to methods for large area graphene precipitation onto glass, and associated articles/devices. For example, coated articles including graphene-inclusive films on substrates, and/or methods of making the same, are provided. A metal-inclusive catalyst layer (e.g., of or including Ni and/or the like) is disposed on the substrate. The substrate with the catalyst layer thereon is exposed to a precursor gas and a strain-inducing gas at a temperature of no more than 350-600 degrees C. for 10s or 100s of minutes. Graphene is formed and/or allowed to form both over and contacting the catalyst layer, and between the substrate and the catalyst layer, in making the coated article. The catalyst layer, together with graphene formed thereon, is removed, e.g., through excessive strain introduced into the catalyst layer as associated with the graphene formation. Products including such articles, and/or methods of making the same, also are contemplated.
摘要翻译：某些示例性实施方案涉及用于大面积石墨烯沉淀到玻璃上的方法以及相关的制品/装置。例如，提供了包括在基底上的含石墨烯膜的涂覆制品和/或其制备方法。包含金属的催化剂层（例如由Ni和/或类似物构成或包含Ni等）设置在基板上。其上具有催化剂层的基板在不超过350-600℃的温度下暴露于前体气体和应变诱导气体10分钟或100分钟。在制造涂覆制品时，形成和/或允许石墨烯形成和接触催化剂层，以及在基材和催化剂层之间。催化剂层与其上形成的石墨烯一起被除去，例如通过与石墨烯形成相关的引入到催化剂层中的过度应变来除去。包括这些制品的产品，和/或制备它们的方法也被考虑。

10. 发明申请

US20160376156A1 METHOD OF GROWING A GRAPHENE COATING OR CARBON NANOTUBES ON A CATALYTIC SUBSTRATE 审中-公开
标题翻译：在催化底物上生长石墨烯或碳纳米管的方法
公开(公告)号：US20160376156A1
公开(公告)日：2016-12-29
申请号：US15189545
申请日：2016-06-22
申请人： POLYVALOR, LIMITED PARTNERSHIP , VALORISATION-RECHERCHE, LIMITED PARTNERSHIP
发明人： SAMAN CHOUBAK , PIERRE LÉVESQUE , PHILIPPE GAGNON , RICHARD MARTEL , PATRICK DESJARDINS
IPC分类号： C01B31/04 , B01J23/72 , C23C16/01 , C01B31/02 , C23C16/26 , C23C16/02
CPC分类号： C01B31/0453 , B01J23/72 , B01J23/745 , B01J23/75 , B01J23/755 , B01J37/06 , B01J37/08 , C01B32/162 , C01B32/186 , C23C16/01 , C23C16/26 , C23C16/45557
摘要： A method of growing a graphene coating or carbon nanotubes on a catalytic substrate by chemical vapor deposition is provided. In the method, the chemical vapor deposition is carried out in an atmosphere in which a ratio Pox/Pred is about 5×10−6 or less, wherein Pox is the partial pressure oxidizing species in the atmosphere and Pred is the partial pressure of reducing species in the atmosphere. A catalytic substrate coated with a graphene coating grown according to this method is also provided.
摘要翻译：提供了通过化学气相沉积在催化底物上生长石墨烯涂层或碳纳米管的方法。在该方法中，化学气相沉积在Pox / Pred比为约5×10-6以下的气氛中进行，其中，Pox是大气中的分压氧化物质，而Pred是降低的分压物种在大气中。还提供了涂覆有根据该方法生长的石墨烯涂层的催化基材。

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