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1. 发明申请

US20180067257A1 BENT AND TAPERED OPTICAL WAVEGUIDE FOR MORE CONVERTER AND POLARIZATION ROTATOR 审中-公开
公开(公告)号：US20180067257A1
公开(公告)日：2018-03-08
申请号：US15812441
申请日：2017-11-14
申请人： Elenion Technologies, LLC
发明人： Yangjin Ma , Michael J. Hochberg
IPC分类号： G02B6/126 , G02B6/122 , G02B6/14 , G02B6/12
CPC分类号： G02B6/126 , G02B6/122 , G02B6/1228 , G02B6/14 , G02B2006/12119 , G02B2006/12152 , G02B2006/12195
摘要： A bent taper is provided that includes one or more waveguide bends, at least one of which has a tapering waveguide width along at least a portion thereof. In one embodiment, the bent taper is an S-shaped bent taper that is configured as a TE0-TE1 mode convertor. Such a bent taper can be combined with a linear bi-layer taper configured as a TM0-TE1 mode converter to form a TM0-TE0 polarization rotator.

2. 发明申请

US20170219777A1 Edge Coupling Device Fabrication 审中-公开
公开(公告)号：US20170219777A1
公开(公告)日：2017-08-03
申请号：US15491772
申请日：2017-04-19
申请人： Futurewei Technologies, Inc.
发明人： Huapu Pan , Zongrong Liu , Hongzhen Wei , Hongmin Chen
IPC分类号： G02B6/30 , G02B6/136
CPC分类号： G02B6/136 , G02B6/1223 , G02B6/132 , G02B6/305 , G02B2006/12061 , G02B2006/12097 , G02B2006/12195
摘要： An edge coupling device including a substrate, a buried oxide disposed over the substrate, a cladding material disposed over the buried oxide, where the cladding material includes a trench, an inversely tapered silicon waveguide disposed within the cladding material beneath the trench, and a ridge waveguide disposed within the trench, where the ridge waveguide and the inversely tapered silicon waveguide are vertically-aligned with each other.

3. 发明授权

US09703047B2 Spot-size converter for optical mode conversion and coupling between two waveguides 有权
公开(公告)号：US09703047B2
公开(公告)日：2017-07-11
申请号：US14635602
申请日：2015-03-02
申请人： Ciena Corporation
发明人： Yves Painchaud , Marie-Josée Picard , Christine Latrasse , Michel Poulin
IPC分类号： G02B6/14 , G02B6/12 , G02B6/30 , G02B6/122 , G02B6/124
CPC分类号： G02B6/305 , G02B6/12 , G02B6/12002 , G02B6/12004 , G02B6/1223 , G02B6/1228 , G02B6/124 , G02B6/14 , G02B6/30 , G02B2006/12038 , G02B2006/12061 , G02B2006/12147 , G02B2006/12152 , G02B2006/12195
摘要： A spot-size converter for coupling light between first and second waveguides respectively supporting first and second propagation modes having substantially different dimensions is provided. The spot-size converter includes a lower and an upper waveguiding structure each characterized by an effective refractive index. The lower waveguiding structure is coupled to the first waveguide to receive light therefrom or transmit light thereto in the first propagation mode. The upper waveguiding structure is coupled to the second waveguide to transmit light thereto or receive light therefrom in the second propagation mode. The upper waveguiding structure includes a plurality of longitudinally extending high-index elements arranged in multiple vertically spaced rows. At least part of the upper waveguiding structure extends at least partially over the lower waveguiding structure so as to define a coupling region wherein an effective refractive index crossing occurs, thereby enabling evanescent coupling of light between the lower and upper waveguiding structures.

4. 发明授权

US09703039B2 Edge coupling device fabrication 有权
公开(公告)号：US09703039B2
公开(公告)日：2017-07-11
申请号：US14680917
申请日：2015-04-07
申请人： Futurewei Technologies, Inc.
发明人： Huapu Pan , Zongrong Liu , Hongzhen Wei , Hongmin Chen
IPC分类号： G02B6/12 , G02B6/136 , G02B6/132 , G02B6/30 , G02B6/122
CPC分类号： G02B6/136 , G02B6/1223 , G02B6/132 , G02B6/305 , G02B2006/12061 , G02B2006/12097 , G02B2006/12195
摘要： A method of fabricating an edge coupling device and an edge coupling device are provided. The method includes removing a portion of cladding material to form a trench over an inversely tapered silicon waveguide, depositing a material having a refractive index greater than silicon dioxide over remaining portions of the cladding material and in the trench, and removing a portion of the material within the trench to form a ridge waveguide.

5. 发明授权

US09606291B2 Multilevel waveguide structure 有权
公开(公告)号：US09606291B2
公开(公告)日：2017-03-28
申请号：US14749907
申请日：2015-06-25
申请人： International Business Machines Corporation
发明人： John J. Ellis-Monaghan , Brendan S. Harris , Vibhor Jain , Yves T. Ngu , Sebastian T. Ventrone
IPC分类号： G02B6/12 , G02B6/125 , G02B6/122 , G02B6/13
CPC分类号： G02B6/125 , G02B6/12002 , G02B6/1228 , G02B6/13 , G02B6/30 , G02B2006/12061 , G02B2006/12147 , G02B2006/12195
摘要： Integrated optical structures include a first wafer layer, a first insulator layer directly connected to the top of the first wafer layer, a second wafer layer directly connected to the top of the first insulator layer, a second insulator layer directly connected to the top of the second wafer layer, and a third wafer layer directly connected to the top of the second insulator layer. Such structures include: a first optical waveguide positioned within the second wafer layer; an optical coupler positioned within the second wafer layer, the second insulator layer, and the third wafer layer; and a second optical waveguide positioned within the third wafer layer. The optical coupler transmits an optical beam from the first optical waveguide to the second optical waveguide through the second insulator layer.

6. 发明申请

US20160320563A1 Multi-Axis Graded-Index Photonic Coupling 审中-公开
公开(公告)号：US20160320563A1
公开(公告)日：2016-11-03
申请号：US15206752
申请日：2016-07-11
申请人： Cisco Technology, Inc.
发明人： Sean Anderson , Weizhuo Li , Vipulkumar Patel
IPC分类号： G02B6/32 , G02B6/136 , G02B3/00 , G02B6/132
CPC分类号： G02B6/32 , G02B3/0087 , G02B6/124 , G02B6/1245 , G02B6/132 , G02B6/136 , G02B6/30 , G02B6/4206 , G02B2006/12095 , G02B2006/121 , G02B2006/12176 , G02B2006/12178 , G02B2006/12195
摘要： An optical coupling may involve orienting a waveguide and a lens such that light rays are focused on a surface. The lens may involve the use of a material having a variable refractive index to focus rays of light along first axis and a curved surface to focus the rays of light along a second axis.

7. 发明授权

US09360622B2 Low loss optical crossing and method of making same 有权
标题翻译：低损耗光学杂交及其制作方法
公开(公告)号：US09360622B2
公开(公告)日：2016-06-07
申请号：US14165229
申请日：2014-01-27
申请人： Huawei Technologies Co., Ltd.
发明人： Dominic John Goodwill
IPC分类号： G02B6/12 , G02B6/125 , G02B6/35 , G02B6/122 , G02B6/293 , G02B6/26
CPC分类号： G02B6/125 , G02B6/12 , G02B6/122 , G02B6/1228 , G02B6/124 , G02B6/126 , G02B6/26 , G02B6/2935 , G02B6/3596 , G02B2006/12038 , G02B2006/12061 , G02B2006/12085 , G02B2006/12097 , G02B2006/12195
摘要： A low loss optical crossing and a method of making an optical crossing in a photonic integrated circuit. An optical crossing embodiment includes a crossing region having a crossing length, wherein a light path through the crossing region is laterally unbound; an input waveguide having an input crossing end and an input distal end, and coupled to the crossing region at the input crossing end, thereby partially forming the light path; and an output waveguide having an output crossing end and an output distal end, and coupled to the crossing region at the output crossing end, thereby partially forming the light path, wherein a crossing width of the output waveguide at the output crossing end is larger than a crossing width of the input waveguide at the input crossing end according to the crossing length, and wherein a lateral center of the output waveguide at the output crossing end is laterally displaced by an offset from a lateral center of the input waveguide at the input crossing end according to the crossing length.
摘要翻译：低损耗光学交叉和在光子集成电路中制作光交叉的方法。光学交叉实施例包括具有交叉长度的交叉区域，其中穿过所述交叉区域的光路横向不结合; 输入波导，其具有输入交叉端和输入远端，并且在输入交叉端处耦合到交叉区域，从而部分地形成光路; 以及输出波导，其具有输出交叉端和输出远端，并且在输出交叉端处耦合到交叉区域，从而部分地形成光路，其中输出交叉端处的输出波导的交叉宽度大于输入交叉端的输入波导的交叉宽度根据交叉长度，并且其中输出交叉端处的输出波导的横向中心在输入交叉处横向偏离输入波导的横向中心的偏移根据交叉长度结束。

8. 发明授权

US09297956B2 Optical device, optical transmitter, optical receiver, optical transceiver, and method of manufacturing optical device 有权
标题翻译：光学装置，光发射机，光接收机，光收发器，以及制造光学装置的方法
公开(公告)号：US09297956B2
公开(公告)日：2016-03-29
申请号：US13775614
申请日：2013-02-25
申请人： FUJITSU LIMITED , NEC Corporation
发明人： Nobuaki Hatori , Masashige Ishizaka , Takanori Shimizu
IPC分类号： G02B6/122 , G02B6/26 , G02B6/125 , B05D5/06 , G02B6/30 , G02B6/136 , G02B6/12
CPC分类号： G02B6/1228 , B05D5/06 , G02B6/125 , G02B6/136 , G02B6/26 , G02B6/305 , G02B2006/12097 , G02B2006/121 , G02B2006/12147 , G02B2006/12195
摘要： An optical device includes: a first cladding layer; a core layer disposed on the first cladding layer and, with increase in its sectional area, extending from a first end which receives/outputs light along a direction from the first end toward a second end; a slab layer disposed on the first cladding layer and extending to the second end along the direction from the first end toward the second end; a rib layer disposed on the slab layer and, with decrease in its sectional area, extending to the second end along the direction from the first end toward the second end; and a second cladding layer disposed on the core layer and the rib layer. The core layer and both of the slab and rib layers are optically coupled in a part in which the sectional are of the core and rib layers is the maximum.
摘要翻译：光学装置包括：第一包层; 芯层，设置在第一包层上，并且随着其截面积的增加，从沿第一端朝向第二端的方向接收/输出光的第一端延伸; 平板层，其设置在所述第一包层上并沿着从所述第一端朝向所述第二端的方向延伸到所述第二端; 布置在所述板状层上的肋层，其截面积减小，沿着从所述第一端朝向所述第二端的方向延伸到所述第二端; 以及设置在所述芯层和所述肋层上的第二覆层。芯层和板和肋层两者在芯部的部分和光学层中被光耦合，并且肋层是最大的。

9. 发明授权

US09268089B2 Layer having a non-linear taper and method of fabrication 有权
标题翻译：具有非线性锥度和制造方法的层
公开(公告)号：US09268089B2
公开(公告)日：2016-02-23
申请号：US14270014
申请日：2014-05-05
申请人： Octrolix BV
发明人： Rene Gerrit Heideman , Marcel Hoekman
IPC分类号： G02B6/122 , G02B6/136 , G02B6/12
CPC分类号： G02B6/14 , G02B6/1223 , G02B6/1228 , G02B6/136 , G02B2006/12173 , G02B2006/12176 , G02B2006/12195 , Y10T428/24479
摘要： A method for forming a non-linear thickness-profile in a first layer of a first material is disclosed. The method comprises forming an accelerator layer of a second material on the first layer and forming a mask layer disposed on the accelerator layer, wherein the mask layer enables the accelerator layer to expose the first layer to a first etchant in a first region, where the exposure time for each point along a first axis varies non-linearly as a function of distance from a first point on the first axis. Since the time for which the first layer is exposed to the first etch in the first region is non-linear, the thickness of the first layer in the first region changes non-linearly along the first axis.
摘要翻译：公开了一种在第一材料的第一层中形成非线性厚度轮廓的方法。该方法包括在第一层上形成第二材料的加速剂层并形成设置在加速剂层上的掩模层，其中掩模层使加速剂层能够将第一层暴露于第一区域中的第一蚀刻剂，其中沿着第一轴的每个点的曝光时间作为与第一轴上的第一点的距离的函数非线性地变化。由于第一层暴露于第一区域中的第一蚀刻的时间是非线性的，所以第一区域中的第一层的厚度沿着第一轴线非线性地变化。

10. 发明申请

US20160025922A1 SEMICONDUCTOR OPTICAL DEVICE 有权
标题翻译：半导体光学器件
公开(公告)号：US20160025922A1
公开(公告)日：2016-01-28
申请号：US14806329
申请日：2015-07-22
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Naoya KONO , Kazuhiko HORINO
IPC分类号： G02B6/02 , G02F1/225
CPC分类号： G02B6/1228 , G02B6/30 , G02B6/305 , G02B2006/12152 , G02B2006/12195 , G02F1/025 , G02F2001/212
摘要： A semiconductor optical device including: a substrate including a first region and a second region; a first optical waveguide disposed on the first region, the first optical waveguide including a core layer and a cladding layer disposed on the core layer, the cladding layer including a first cladding region and a semiconductor layer disposed on the first cladding region, the first optical waveguide extending from an end facet of the semiconductor optical device to a boundary between the first region and the second region; a second optical waveguide disposed on the second region; and a region disposed on the cladding layer, the region having a lower refractive index than that of the first cladding region. The semiconductor layer has a higher refractive index than that of the first cladding region. The thickness of the core layer monotonically increases from the end facet toward the boundary.
摘要翻译：一种半导体光学器件，包括：包括第一区域和第二区域的衬底; 设置在第一区域上的第一光波导，第一光波导包括芯层和设置在芯层上的包覆层，包层包括第一包层区域和设置在第一包层区域上的半导体层，第一光导体波导从半导体光学器件的端面延伸到第一区域和第二区域之间的边界; 设置在所述第二区域上的第二光波导; 以及设置在所述包覆层上的区域，所述区域的折射率低于所述第一包层区域的折射率。半导体层具有比第一包层区域更高的折射率。芯层的厚度从端面向边界单调增加。

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