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1. 发明申请

US20180130531A1 THREE DIMENSIONAL ELECTRIC FIELD DATA STORAGE DEVICE UTILIZING SHOCKWAVES AND A LIGHT SOURCE 有权
公开(公告)号：US20180130531A1
公开(公告)日：2018-05-10
申请号：US15415515
申请日：2017-01-25
申请人： Seagate Technology LLC
发明人： Joachim Ahner , David Marcus Tung
IPC分类号： G11C13/04
CPC分类号： G11B7/24 , B05D3/00 , G11B7/00 , G11C7/005 , G11C13/04 , G11C13/047 , G11C13/048
摘要： A system includes a data storage medium and a shockwave generator. The data storage medium includes cells and a plurality of layers. Each cell is configured to store information therein. At least two cells are arranged in a horizontal plane within a same layer of the plurality of layers of the data storage medium and at least two cells are arranged in a vertical plane in different layers of the plurality of layers of the data storage medium. The shockwave generator is configured to generate a shockwave signal that travels through a layer of the plurality of layers of the data storage medium. A target cell within the layer stores information responsive to a beam emitted from an emitter targeting the target cell as the shockwave signal is passing through the target cell. The target cell maintains the information after the shockwave signal exits through the target cell.

2. 发明申请

US20110114946A1 MEMORY DEVICE 有权
标题翻译：内存设备
公开(公告)号：US20110114946A1
公开(公告)日：2011-05-19
申请号：US12946095
申请日：2010-11-15
申请人： Toshihiko Saito
发明人： Toshihiko Saito
IPC分类号： H01L29/786
CPC分类号： H01L27/10873 , G11C7/005 , G11C7/24 , G11C11/404 , G11C11/4078 , G11C2211/4013 , H01L27/1225
摘要： A memory device without additional logic circuits, including a memory cell which cannot be accessed by a third party and which is always accessible when needed. One embodiment is a memory device including a first memory cell and a second memory cell, and the second memory cell includes a second transistor having a second channel formed of an oxide semiconductor film. Data is read from the second memory cell when the second transistor is being irradiated with ultraviolet rays.
摘要翻译：一种没有附加逻辑电路的存储器件，包括不能由第三方访问的存储器单元，并且在需要时总是可访问的。一个实施例是包括第一存储器单元和第二存储单元的存储器件，并且第二存储器单元包括具有由氧化物半导体膜形成的第二通道的第二晶体管。当第二晶体管被紫外线照射时，从第二存储单元读取数据。

3. 发明授权

US07724613B2 Apparatus and method to store information in a holographic data storage medium 失效
标题翻译：在全息数据存储介质中存储信息的装置和方法
公开(公告)号：US07724613B2
公开(公告)日：2010-05-25
申请号：US11773239
申请日：2007-07-03
申请人： Allen Keith Bates , Nils Haustein , Craig Anthony Klein , Daniel James Winarski
发明人： Allen Keith Bates , Nils Haustein , Craig Anthony Klein , Daniel James Winarski
IPC分类号： G11B7/085
CPC分类号： G11C7/005 , G11B20/1258 , G11B2020/1242 , G11B2220/2504 , G11C13/042
摘要： A method is disclosed to store information in a holographic data storage medium. The method supplies a holographic data storage medium and provides information. The method defines an Active storage portion for the holographic data storage medium and establishes a threshold access interval. The method determines if the information was last accessed within the threshold access interval. If the information was last accessed within said threshold access interval, the method then stores that information as one or more holograms encoded in said Active storage portion of the holographic data storage medium.
摘要翻译：公开了一种在全息数据存储介质中存储信息的方法。该方法提供全息数据存储介质并提供信息。该方法定义用于全息数据存储介质的活动存储部分，并建立阈值访问间隔。该方法确定在阈值访问间隔内是否最后访问信息。如果在所述阈值访问间隔内最后访问信息，则该方法然后将该信息存储为在全息数据存储介质的所述Active存储部分中编码的一个或多个全息图。

4. 发明申请

US20090010089A1 APPARATUS AND METHOD TO STORE INFORMATION IN A HOLOGRAPHIC DATA STORAGE MEDIUM 失效
标题翻译：在全息数据存储介质中存储信息的装置和方法
公开(公告)号：US20090010089A1
公开(公告)日：2009-01-08
申请号：US11773239
申请日：2007-07-03
申请人： ALLEN KEITH BATES , NILS HAUSTEIN , CRAIG ANTHONY KLEIN , DANIEL JAMES WINARSKI
发明人： ALLEN KEITH BATES , NILS HAUSTEIN , CRAIG ANTHONY KLEIN , DANIEL JAMES WINARSKI
IPC分类号： G03H1/26 , G11C7/00
CPC分类号： G11C7/005 , G11B20/1258 , G11B2020/1242 , G11B2220/2504 , G11C13/042
摘要： A method is disclosed to store information in a holographic data storage medium. The method supplies a holographic data storage medium and provides information. The method defines an Active storage portion for the holographic data storage medium and establishes a threshold access interval. The method determines if the information was last accessed within the threshold access interval. If the information was last accessed within said threshold access interval, the method then stores that information as one or more holograms encoded in said Active storage portion of the holographic data storage medium.
摘要翻译：公开了一种在全息数据存储介质中存储信息的方法。该方法提供全息数据存储介质并提供信息。该方法定义用于全息数据存储介质的活动存储部分，并建立阈值访问间隔。该方法确定在阈值访问间隔内是否最后访问信息。如果在所述阈值访问间隔内最后访问信息，则该方法然后将该信息存储为在全息数据存储介质的所述Active存储部分中编码的一个或多个全息图。

5. 发明授权

US07459321B2 Method of storing a data bit in a fast-write alloy 有权
标题翻译：将数据位存储在快速写入合金中的方法
公开(公告)号：US07459321B2
公开(公告)日：2008-12-02
申请号：US11192468
申请日：2005-07-29
申请人： Eric C. Hannah , Michael A. Brown
发明人： Eric C. Hannah , Michael A. Brown
IPC分类号： H01L21/00
CPC分类号： G11B9/04 , G11B9/10 , G11B2005/0021 , G11C7/005 , H01J37/3053
摘要： Alloy memory structures and methods are disclosed wherein a layer or volume of alloy material changes conductivity subsequent to introduction of a electron beam current-induced change in phase of the alloy, the conductivity change being detected using current detection means such as photon-emitting P-N junctions, and being associated with a change in data bit memory state.
摘要翻译：公开了合金记忆结构和方法，其中合金材料的层或体积在引入电子束电流引起的合金相位变化之后改变导电性，使用电流检测装置如光子发射PN结检测电导率变化并且与数据位存储器状态的改变相关联。

6. 发明申请

US20060018232A1 Device to store and read a data bit in a phase change alloy material 审中-公开
标题翻译：用于存储和读取相变合金材料中的数据位的装置
公开(公告)号：US20060018232A1
公开(公告)日：2006-01-26
申请号：US11193213
申请日：2005-07-29
申请人： Eric Hannah , Michael Brown
发明人： Eric Hannah , Michael Brown
IPC分类号： G11B7/00
CPC分类号： G11B9/04 , G11B9/10 , G11B2005/0021 , G11C7/005 , H01J37/3053
摘要： Alloy memory structures and methods are disclosed wherein a layer or volume of alloy material changes conductivity subsequent to introduction of a electron beam current-induced change in phase of the alloy, the conductivity change being detected using current detection means such as photon-emitting P—N junctions, and being associated with a change in data bit memory state.
摘要翻译：公开了合金记忆结构和方法，其中合金材料的层或体积在引入电子束电流引起的合金相位变化之后改变导电性，使用电流检测装置如光子发射PN结检测电导率变化并且与数据位存储器状态的改变相关联。

7. 发明授权

US06850625B2 Information storage method, information storage device and recording medium 失效
标题翻译：信息存储方法，信息存储装置和记录介质
公开(公告)号：US06850625B2
公开(公告)日：2005-02-01
申请号：US09777416
申请日：2001-02-06
申请人： Hitoshi Kimura , Shoji Kanamaru
发明人： Hitoshi Kimura , Shoji Kanamaru
IPC分类号： G11C11/41 , G11C7/00 , G11C13/04 , G06K9/00
CPC分类号： G11C7/005 , G11C13/04
摘要： Information to be stored is input to a plurality of information carrier storage means that interact with each other. A unit amount of information carriers is added to a position selected from the information carrier storage means, and nonlinear diffusion of information carriers is executed from the selected information carrier storage means to its neighboring information carrier storage means, and at the same time, nonlinear dissipation is executed from the information carrier storage means. At that time, the dissipation amount is determined so that the amount adding the difference between the amount of addition and the amount of dissipation to the input representation does not exceed a predetermined threshold value. When equilibrium is confirmed as a result of judgement whether changes in amount of information carriers of each information carrier storage means has become small or not, the amount of information carriers stored in the information carrier storage means is output as a numerical value.
摘要翻译：要存储的信息被输入到彼此相互作用的多个信息载体存储装置。信息载体的单位量被添加到从信息载体存储装置中选择的位置，信息载体的非线性扩散从所选择的信息载体存储装置执行到其相邻的信息载体存储装置，同时非线性耗散从信息载体存储装置执行。此时，确定耗散量，使得添加量与输入表示的耗散量之间的差额不超过预定阈值。作为判断结果，当每个信息载体存储装置的信息载体的量的变化已经变小时，当确定平衡时，存储在信息载体存储装置中的信息载体的数量被输出为数值。

8. 发明申请

US20040071066A1 Determining emitter beam size for data storage medium 失效
标题翻译：确定数据存储介质的发射束大小
公开(公告)号：US20040071066A1
公开(公告)日：2004-04-15
申请号：US10268504
申请日：2002-10-09
发明人： Jeffrey M. Valley , John Liebeskind
IPC分类号： G11B007/125
CPC分类号： G01J1/4257 , G11C7/005 , G11C13/00 , G11C13/04
摘要： Determining a beam size of an emitter for a data storage medium is disclosed. The emitter, having an emitted beam, is moved across conductor of a detector. Current through the conductor, resulting from the emitted beam as the emitter moves across the detector, is measured. The size of the emitted beam of the emitter is determined based on the position of the emitter and the measured current.
摘要翻译：公开了确定数据存储介质的发射器的光束尺寸。具有发射光束的发射器被移动穿过检测器的导体。测量由发射体穿过检测器发射的射束产生的通过导体的电流。基于发射极的位置和测量的电流来确定发射器的发射光束的大小。

9. 发明授权

US06343740B1 Oblique access to image data for reading apparatus 失效
标题翻译：倾斜读取设备的图像数据
公开(公告)号：US06343740B1
公开(公告)日：2002-02-05
申请号：US08982188
申请日：1997-12-17
申请人： Paul P. Ju , Ynjiun P. Wang
发明人： Paul P. Ju , Ynjiun P. Wang
IPC分类号： G06K710
CPC分类号： G06K7/1456 , G06K7/10722 , G11C7/005 , G11C8/12
摘要： An image sensor array system is arranged to enable oblique access for readout of image data from a stepped pixel pattern of sensor cells. The stepped pixel pattern represents an oblique line component of an image portion containing a 2-D bar code or other dataform. An obliquely aligned bar code image can thus be read out along oblique lines which follow rows of bar code elements traversing the elements. The sensor array (16) is accessed by horizontal and vertical readout circuits (22 and 24) under the control of address signals from an address unit (20). Location signals, from a source (12), indicative of a selected image portion (39) may be used by the address unit (20) to provide address signals representative of the stepped pixel pattern for a particular oblique line component. Under the control of the address signals, image data from cells at the intersection of array lines and columns are sampled by sampling devices (26-32) and provided as output signals representative of the selected oblique line component. The output signals are then usable for decoding the bar code or other dataform.
摘要翻译：图像传感器阵列系统被布置成使得能够从传感器单元的阶梯状像素图案读出图像数据的倾斜访问。阶梯状像素图案表示包含2-D条形码或其他数据形式的图像部分的斜线分量。因此，可以沿着遍历元件的条形码元素行的斜线读出倾斜对准的条形码图像。在来自地址单元（20）的地址信号的控制下，传感器阵列（16）由水平和垂直读出电路（22和24）访问。指示所选择的图像部分（39）的来自源（12）的位置信号可以由地址单元（20）使用，以提供表示特定斜线分量的阶梯状像素图案的地址信号。在地址信号的控制下，通过采样装置（26-32）对阵列线和列交叉处的单元的图像数据进行采样，并将其作为表示所选斜线分量的输出信号提供。然后输出信号可用于解码条形码或其他数据形式。

10. 发明授权

US06281519B1 Quantum semiconductor memory device including quantum dots 失效
标题翻译：量子半导体存储器件包括量子点
公开(公告)号：US06281519B1
公开(公告)日：2001-08-28
申请号：US09273526
申请日：1999-03-22
申请人： Yoshihiro Sugiyama , Yoshiaki Nakata
发明人： Yoshihiro Sugiyama , Yoshiaki Nakata
IPC分类号： H01L2906
CPC分类号： B82Y30/00 , B82Y10/00 , G11B7/00453 , G11B7/00455 , G11B7/0052 , G11B7/24 , G11B7/26 , G11C7/005 , G11C11/34 , G11C2216/08 , H01L29/127
摘要： A quantum semiconductor memory device includes a quantum structure formed on a substrate, wherein the quantum structure includes a plurality of self-organized quantum dots forming a strained heteroepitaxial system with respect to the substrate and an accumulation layer formed adjacent to the self-organized quantum dots, and wherein the self-organized quantum dots are formed of a semiconductor crystal having a composition set such that quantum levels of the self-organized quantum dots are located higher than a conduction band of the accumulation layer.
摘要翻译：量子半导体存储器件包括形成在衬底上的量子结构，其中量子结构包括相对于衬底形成应变异质外延系统的多个自组织量子点和与自组织量子点相邻形成的累积层并且其中所述自组织量子点由半导体晶体形成，所述半导体晶体具有使得所述自组织量子点的量子水平位于比所述累积层的导带高的组成。

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